JPS61219709A - Preparation of diamondlike carbon - Google Patents

Abstract

PURPOSE:To obtain diamondlike carbon with improved film-forming velocity by ionizing with an electrode carbon vapor evaporated by heating in vacuum and depositing carbon on a base plate after adding reactive gas. CONSTITUTION:In the process for depositing diamondlike carbon on a base plate by evaporating carbon in vacuum by heating with electron beam etc., graphite is used as solid carbon source and generated carbon vapor is ionized in a relatively high vacuum of about 10<-4>Torr level with an ionizing electrode and filament, or with an ionizing electrode. Diamondlike carbon is formed by adding further a gaseous mixture of H2 with argon, or gaseous H2. The diamondlike carbon has wide field of application in surface treatment of cutting tools, surface treatment of acoustic material having high specific elastic modulus, requiring high abrasion resistance, or as functional diamond thin film for optical and semiconductor use.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for producing diamond thin films using a solid carbon source at low pressure and relatively low temperatures.

[Prior art] Chemical vapor deposition (plasma CVD) and ionization vapor deposition are methods for producing diamond thin films at low pressure and relatively low temperatures, which have attracted attention as new materials in recent years. Confirmed. Furthermore, in recent years, a proposal has been made using microwave discharge as a plasma generation method (Japanese Patent Laid-Open No. 110494/1983). These generation methods use hydrocarbon and hydrogen gas as a mixed gas, introduce this mixed gas onto the heated substrate surface, and deposit diamond by thermal decomposition of the hydrocarbon. There is also an ion beam method that uses graphite as a carbon source.

[Problem to be solved by the invention 1 However, the diamond produced by these methods has the drawback that the film formation rate is slow. This is thought to be because the mean free path becomes smaller. Furthermore, there has been no proposal to manufacture a diamond thin film by the so-called reactive ion blating method.

In consideration of this point, the present invention aims to provide a method for manufacturing diamond-like carbon that improves the film formation rate.

[Means for Solving the Problems] The method for manufacturing a diamond thin film of the present invention is a method of heating and evaporating carbon in a vacuum by heating with an electron beam or the like, and depositing diamond-like carbon on a substrate. Graphite, which is a solid carbon source, is used to ionize carbon vapor using an ionization electrode (probe) and filament, or an ionization electrode (probe) in a relatively high vacuum of about 10-4 Torr, and then a mixed gas of hydrogen and argon, Alternatively, diamond-like carbon is formed by adding hydrogen gas.

[Example] As shown in FIG. 1, a Si wafer substrate 2 is placed in a vacuum chamber 1.
After evacuating to 1O-6 Torr, the graphite 5 in the crucible 4 is evaporated using the electron beam 3,
At the same time, the ionization electrode 6 placed above the crucible receives a direct current of 50
A voltage (2) is applied, and a predetermined power is also applied to the thermionic emission filament 7 placed between the crucible 4 and the probe 6 to ionize the evaporated carbon. After that, a mixed gas of hydrogen and argon was introduced into the vacuum chamber, and a DC current of -100 was applied to the substrate.
A voltage of V is applied to -1, the shutter 8 is opened, and a film is formed on the substrate 2. The film formation rate is 0.01/1
A range of n to 0.5 skin/sin is preferred. Obtained Si
When the film formed on the wafer substrate was evaluated, it showed a hardness of HV 1,500-2, Goo on the St wafer, and it was confirmed by electron beam diffraction and ESCA spectrum that diamond bonds were formed.

[Effects of the Invention] Since the present invention uses graphite as a solid carbon source, ionization is performed in a relatively high vacuum on an io-'rorr scale, and diamond-like carbon is formed in a hydrogenated atmosphere. The film formation rate can be improved, and its applications include surface treatment of cutting tools that require wear resistance. It has a wide range of applications as a functional diamond thin film for semiconductors and other applications.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram of a manufacturing apparatus for carrying out the present invention.

Claims (6)

[Claims] (1) In a method of depositing diamond-like carbon on a substrate by heating and evaporating carbon in a vacuum using electron beam heating or the like, the carbon vapor is ionized with an electrode,
A method for producing diamond-like carbon, characterized in that it is formed by adding a reactive gas. (2) Claim No. 2 in which carbon is graphite (
1) The method for producing diamond-like carbon as described in section 1). (3) The method for producing diamond-like carbon according to claim (1), wherein the electrodes are probes and filaments. (4) Claim No. (1) in which the electrode is a probe
The method for manufacturing diamond-like carbon described in Section 1. (5) The method for producing diamond-like carbon according to claim (1), wherein the reactive gas is a mixed gas of hydrogen and argon. (6) The method for producing diamond-like carbon according to claim (1), wherein the reactive gas is hydrogen gas.