JPS61215285A - 結晶成長方法 - Google Patents
結晶成長方法Info
- Publication number
- JPS61215285A JPS61215285A JP5717485A JP5717485A JPS61215285A JP S61215285 A JPS61215285 A JP S61215285A JP 5717485 A JP5717485 A JP 5717485A JP 5717485 A JP5717485 A JP 5717485A JP S61215285 A JPS61215285 A JP S61215285A
- Authority
- JP
- Japan
- Prior art keywords
- melt
- crucible
- crystal
- pulling
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5717485A JPS61215285A (ja) | 1985-03-20 | 1985-03-20 | 結晶成長方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5717485A JPS61215285A (ja) | 1985-03-20 | 1985-03-20 | 結晶成長方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61215285A true JPS61215285A (ja) | 1986-09-25 |
JPH0480875B2 JPH0480875B2 (ko) | 1992-12-21 |
Family
ID=13048174
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5717485A Granted JPS61215285A (ja) | 1985-03-20 | 1985-03-20 | 結晶成長方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61215285A (ko) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01212293A (ja) * | 1988-02-19 | 1989-08-25 | Sumitomo Metal Ind Ltd | 結晶成長方法 |
JPH02233581A (ja) * | 1989-03-07 | 1990-09-17 | Sumitomo Metal Ind Ltd | 結晶成長方法 |
DE4409296A1 (de) * | 1993-03-22 | 1994-09-29 | Sumitomo Sitix Corp | Verfahren zur Herstellung von Silicium-Einkristallen |
US5363796A (en) * | 1991-02-20 | 1994-11-15 | Sumitomo Metal Industries, Ltd. | Apparatus and method of growing single crystal |
US5435263A (en) * | 1993-03-29 | 1995-07-25 | Sumitomo Sitix Corporation | Method of producing single crystal |
US5840116A (en) * | 1994-03-31 | 1998-11-24 | Sumitomo Sitix Corporation | Method of growing crystals |
-
1985
- 1985-03-20 JP JP5717485A patent/JPS61215285A/ja active Granted
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01212293A (ja) * | 1988-02-19 | 1989-08-25 | Sumitomo Metal Ind Ltd | 結晶成長方法 |
JPH02233581A (ja) * | 1989-03-07 | 1990-09-17 | Sumitomo Metal Ind Ltd | 結晶成長方法 |
US5363796A (en) * | 1991-02-20 | 1994-11-15 | Sumitomo Metal Industries, Ltd. | Apparatus and method of growing single crystal |
DE4409296A1 (de) * | 1993-03-22 | 1994-09-29 | Sumitomo Sitix Corp | Verfahren zur Herstellung von Silicium-Einkristallen |
US5477806A (en) * | 1993-03-22 | 1995-12-26 | Sumitomo Sitix Corporation | Method of producing silison single crystal |
US5435263A (en) * | 1993-03-29 | 1995-07-25 | Sumitomo Sitix Corporation | Method of producing single crystal |
US5551978A (en) * | 1993-03-29 | 1996-09-03 | Sumitomo Sitix Corporation | Apparatus for producing single crystal |
US5840116A (en) * | 1994-03-31 | 1998-11-24 | Sumitomo Sitix Corporation | Method of growing crystals |
Also Published As
Publication number | Publication date |
---|---|
JPH0480875B2 (ko) | 1992-12-21 |
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