JPS61214200A - Record display element - Google Patents

Record display element

Info

Publication number
JPS61214200A
JPS61214200A JP60054914A JP5491485A JPS61214200A JP S61214200 A JPS61214200 A JP S61214200A JP 60054914 A JP60054914 A JP 60054914A JP 5491485 A JP5491485 A JP 5491485A JP S61214200 A JPS61214200 A JP S61214200A
Authority
JP
Japan
Prior art keywords
electrode
layer
erasing
coloring
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60054914A
Other languages
Japanese (ja)
Inventor
Nobuyuki Yoshiike
信幸 吉池
Shigeo Kondo
繁雄 近藤
Shinichiro Ishihara
伸一郎 石原
Kosaku Yano
矢野 航作
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP60054914A priority Critical patent/JPS61214200A/en
Publication of JPS61214200A publication Critical patent/JPS61214200A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To enable to repeat coloring-erasing by using a layer of semiconductor that generates electromotive force by light, an electrochromic layer that makes coloring-erasing electrochemically by generated electrons or positive holes and a recording element provided with an electrode necessary for erasing. CONSTITUTION:An ITO electrode z2 is provided on a glass substrate and semiconductor layers 3 are laminated on it in the order of P-i-n. Conductive bodies 4 are islanded on the surface n-layer and an EC layer 5 is laminated on it. Then, a recording element is assembled by bringing the substrate and a counter electrode 7 of ITO into contact with an electrolyte 6. External light is shaded, and the electrode 2 and the counter electrode 7 are made to a closed circuit, and under this condition, He-Ne laser is irradiated. Color is formed efficiently in spotlike form in the part irradiated by the laser beam. DC1V is applied between the electrode 2 and the electrode 7 making the electrode 2 side a positive pole. The spotlike coloring irradiating a fluorescent lamp on the element is erased perfectly. Thus, information storage by photowriting becomes possible and can be erased electrically, and writing and erasing can be made repeatedly.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は音声6画像、電気信号をπ日録、再生。[Detailed description of the invention] Industrial applications The present invention records and reproduces audio, 6 images, and electrical signals.

消去するための記録表示素子に関する。The present invention relates to a recording/display element for erasing.

従来の技術 音声2画像、電気信号を記憶、再生、消去するために従
来から磁気および光記憶方式がとられている。光記憶方
式のものは磁気記憶方式に較べて記憶密度が高く出来る
ことから注目されて来ている。光記憶方式のものは、ア
クリル基板上に形成されたTeC記録膜等に信号に応じ
てレーザー光を照射して熱モードで記録膜に孔をあける
ことにより情報を記録するものと、記録膜としてTK反
膜等を用いてレーザー光照射により熱モードで晶質−非
晶質の変化を行なわせ光反射率の異なる状態を作る方式
が一般的である。これらの光記録方式は、いずれも熱モ
ードによる状態変化を利用したものであり、特に耐熱性
の点で信頼性に欠点を有するものである〇 また、画像1文字、パターンを表示するための箋表示素
子として、CRT 、EL 、FL 、LED。
BACKGROUND OF THE INVENTION Magnetic and optical storage systems have traditionally been used to store, reproduce, and erase audio, video, and electrical signals. Optical storage systems are attracting attention because they can achieve higher storage densities than magnetic storage systems. Optical storage systems record information by irradiating a TeC recording film formed on an acrylic substrate with a laser beam in response to a signal and making holes in the recording film in thermal mode; A common method is to use a TK anti-film or the like to change the crystalline state to the amorphous state in a thermal mode by irradiating laser light to create states with different light reflectances. All of these optical recording methods utilize state changes due to thermal mode, and have drawbacks in reliability, especially in terms of heat resistance.Also, in order to display a single image character or pattern, Display elements include CRT, EL, FL, and LED.

PDP等の発光型とLCD 、ECD等の受光型素子が
用いられている。受光型素子は発光型に較べ、明るい所
でより見やすく、かつ、長時間の使用にオイテも目の疲
れもな(、MM I (man−madtmeInte
rface)としては理相的なものである。そのうちE
CDは表示メモリー機能を有すること、視角依存性のな
いこと等の特徴を有し近年注目を集めている。
Light-emitting devices such as PDP and light-receiving devices such as LCD and ECD are used. Light-receiving type elements are easier to see in bright places than light-emitting types, and they are less irritating and less tiring on the eyes when used for long periods of time.
rface), it is logical. Among them E
CDs have attracted attention in recent years because of their characteristics such as having a display memory function and being independent of viewing angle.

従来のECDは、表示極と対向電極間に電圧を印加し表
示極上で電気化学的にエレクトロクロミック層(以下E
C層と略す)を発色させ、パターン表示し、逆電圧を電
極間に印加することで消去するものであった。
Conventional ECDs apply a voltage between a display electrode and a counter electrode to electrochemically form an electrochromic layer (hereinafter referred to as E) on the display electrode.
C layer) was colored to display a pattern, which was then erased by applying a reverse voltage between the electrodes.

発明が解決しようとする問題点 本発明は、従来の光記録材料の問題点である耐熱性を改
善するとともに、従来0ECDにおいて1本の絵素に1
本のリードが必要である点および細かい任意のパターン
を表示できる新しい記録表子素子を提供するものである
〇 問題点を解決するための手段 本発明は、光により起電力を発生する半導体層と発生し
た電子もしくは正孔により電気化学的に発色−消去する
エレクトロクロミック層と、消去に必要な電極を具備し
た記録素子を用いて熱モードとは全く異なった方法で光
記録−消去とともに表示する機能を得るものである。
Problems to be Solved by the Invention The present invention improves heat resistance, which is a problem of conventional optical recording materials, and also improves heat resistance, which is a problem of conventional optical recording materials.
The purpose of the present invention is to provide a new recording element capable of displaying a fine arbitrary pattern in addition to the need for a book lead. A function that uses an electrochromic layer that electrochemically develops and erases color using generated electrons or holes and a recording element equipped with the electrodes necessary for erasing to perform optical recording and erasing in a method that is completely different from the thermal mode. This is what you get.

作  用 半導体層にエレクトロクロミック層(以下EC層と略す
)を設け、該EC層と対向電極を電解質に接触させ、該
半導体層のEC層とは反対面に設れた部分に電子と正孔
が発生し、電子(もしくは正孔)がEC層側に注入され
正孔(もしくは電子)が電極を通じて対向電極に流れる
。電子(もしくは正孔)のEC層への注入は、界面の状
態で大きく左右されるが、半導体層と1i:0層の間に
、半導体層にオーミック接触する電導体を設けることに
より、よシ容易に行うことができる。また電導体をアイ
ランド状にすることで電子(もしくは正孔)の面内での
拡散を防止できる0すなわちスポット状の光を照射した
場合、EC層は発生注入された電荷量に応じてスポット
状に発色する。次に、光照射を止めるか、電極と対向電
極を開回路状態にすると、発色反応は停止し、発色状態
がメモリ保持される。さらに、スポット状の発色部を消
去するには一定の消去電圧を電極間に印加し、発色部に
光を照射して強制的に発色時とは逆の電流を流すことが
達成できる。
An electrochromic layer (hereinafter abbreviated as EC layer) is provided in the active semiconductor layer, the EC layer and a counter electrode are brought into contact with an electrolyte, and electrons and holes are generated in the portion of the semiconductor layer provided on the opposite side of the EC layer. is generated, electrons (or holes) are injected into the EC layer side, and the holes (or electrons) flow through the electrode to the counter electrode. The injection of electrons (or holes) into the EC layer is largely influenced by the state of the interface, but it can be improved by providing a conductor that makes ohmic contact with the semiconductor layer between the semiconductor layer and the 1i:0 layer. It can be done easily. In addition, by forming the conductor into an island shape, in-plane diffusion of electrons (or holes) can be prevented. When irradiated with zero or spot-shaped light, the EC layer will form a spot-like shape depending on the amount of charge generated and injected. Develops color. Next, when the light irradiation is stopped or the electrode and the opposing electrode are brought into an open circuit state, the coloring reaction stops and the coloring state is retained in the memory. Furthermore, in order to erase a spot-shaped colored part, it is possible to apply a constant erasing voltage between the electrodes, irradiate the colored part with light, and force a current opposite to that during coloring to flow.

以上の発色−消去は、繰り返し行うことができる。The above coloring and erasing can be repeated.

実施例 〔実施例1〕 第1図に示すように、ガラス基板1(プラスチックスで
もよい)、の上にITO電極2 (In2O3+5n0
2 + AI−y Au + Cr + ML等でもよ
い)を蒸着法を設け、その上にグロー放電分解法により
アモルファスシリコン(以下a −s iと略す)の半
導体層3を、p −i −nの順に積層する。次に表面
のn層の上にアイランド状(面積が100人φからso
o人φ)に導電体4(Aj!。
Example [Example 1] As shown in FIG. 1, an ITO electrode 2 (In2O3+5n0
2 + AI-y Au + Cr + ML etc.) is provided by a vapor deposition method, and a semiconductor layer 3 of amorphous silicon (hereinafter abbreviated as a-s i) is formed on it by a glow discharge decomposition method. Stack them in this order. Next, on the n layer on the surface is an island shape (area is from 100 people φ to so
o person φ) and conductor 4 (Aj!.

Au 、 Cr −Au )’&基g#烙−(+雷ダ什
鷺学析出法でもよ(ハ)により形成し、その上に全面に
EC層es CWO3もしくはMo5s )を蒸着法に
より積層する。次に前記基板とITOの対向電極7(I
n203. SnO!、 Au 、 pd  等でもよ
い)を電解質(L1塩−有キ電解質)6に接触させて記
録素子を組み立てた。なお8は背面基材(ガラス)であ
る0 今、外光を遮光し、電極2と対向電極7を閉回路にした
状態で、He−Neレーザ(632,8nm 。
It is formed by Au, Cr-Au)'&G#-(+Raider-Ji-Sakigaku precipitation method (c)), and an EC layer es CWO3 or Mo5s) is laminated on the entire surface by vapor deposition method. Next, the substrate and ITO facing electrode 7 (I
n203. SnO! , Au, pd, etc.) was brought into contact with the electrolyte (L1 salt-based electrolyte) 6 to assemble the recording element. Note that 8 is the back substrate (glass).Now, with external light shielded and the electrode 2 and the counter electrode 7 in a closed circuit, a He-Ne laser (632.8 nm) is applied.

8 mw )を照射したのち、電極間を開回路状態にし
て、エレクトロクロミック層6を対向電極側から観測し
たところ、レーザビーム照射部がスポット状に効率よく
発色していることが判った。この発色状態は室温状態に
おいて長くメモリ保持できるものであった。次に電極2
と対向電極7との電極間に電極2側を正極としてDCl
vを印加し、素子に外光(螢光灯)を照射したところス
ポット状の発色は、完全に消去できた。
8 mw), the electrodes were placed in an open circuit state, and the electrochromic layer 6 was observed from the opposite electrode side, and it was found that the laser beam irradiated area was efficiently colored in a spot shape. This coloring state could be retained in memory for a long time at room temperature. Next, electrode 2
DCl is applied between the electrodes and the counter electrode 7 with the electrode 2 side as the positive electrode.
When V was applied and the element was irradiated with external light (fluorescent lamp), the spot-like color development was completely eradicated.

さらに、70″C17cおける高温保存試験において、
特性劣化がほとんどないことが確認できた。尚、再生は
、開回路状態において長波長側の可視光を用いて行うこ
とができた。
Furthermore, in a high temperature storage test at 70″C17c,
It was confirmed that there was almost no deterioration in characteristics. Note that reproduction could be performed using visible light on the longer wavelength side in an open circuit state.

実施例1と同様に種々のエレクトロクロミック層と電解
質を用いて実験を行なった結果、次の材料が使用できる
ことが判った。
As in Example 1, experiments were conducted using various electrochromic layers and electrolytes, and it was found that the following materials could be used.

(エレクトロクロミック層) WO3,MoO2,Tt02 、 V2O,、Cr2O
3゜Nb2o6.プV乃′ンプルー、ベルリンブルー等
のFe−シアノ錯体、フタロシアニン錯体、バイオロゲ
ン。
(Electrochromic layer) WO3, MoO2, Tt02, V2O,, Cr2O
3°Nb2o6. Fe-cyano complexes, phthalocyanine complexes, viologens, such as phosphorus blue and Berlin blue.

ポリピロール、ポリチオフェア等の有機エレクトロクロ
ミック材。
Organic electrochromic materials such as polypyrrole and polythiophore.

(電解質) L z BF4 t L i C4!04等のLi塩を
溶解した、プロピレンカーボネート、γ−ブチロラクト
ン等の有機電解質、KBr 、 KCj!  等を溶解
した水溶液。
(Electrolyte) Organic electrolyte such as propylene carbonate or γ-butyrolactone in which Li salt such as L z BF4 t Li C4!04 is dissolved, KBr, KCj! An aqueous solution in which etc. are dissolved.

Li3N 、 LtAj!F4. β−AI!203.
 Si OX(H2O) 。
Li3N, LtAj! F4. β-AI! 203.
SiOX(H2O).

Ta206x(H2O)、Li2SiO3−L13PO
4等ノ固体電解質。尚、エレクトロクロミック層の発色
効率が低い場合はp−1−n接合を2重にし起電力電圧
を2倍にすることで達成できた。また電解質が固体の場
合、背面基材7は不必要である0〔実施例2〕 実施例1と同じ記録素子において対向電極上に、電極活
物質層を設けたところ、発色及び消去速度が向上した0
該活物質として効果的であったものは、I r (C)
I)xr Ni (OH)X 、 WO3(多結晶体)
Ta206x(H2O), Li2SiO3-L13PO
4th class solid electrolyte. In addition, when the coloring efficiency of the electrochromic layer was low, this could be achieved by doubling the p-1-n junction and doubling the electromotive force voltage. In addition, when the electrolyte is solid, the back substrate 7 is unnecessary0 [Example 2] When an electrode active material layer was provided on the counter electrode in the same recording element as in Example 1, color development and erasing speed were improved. Did 0
The active material that was effective was I r (C)
I) xr Ni (OH)X, WO3 (polycrystalline)
.

Li2Wo4.V2O6,鉄シアノ錯体、等o蒸着薄膜
である。
Li2Wo4. V2O6, iron cyano complex, etc. are evaporated thin films.

〔実施例3〕 実施例1において、a−8L光起電力層のかわりに半導
体層としてCdS 、 CdSeを用いて同様の実験を
行なった。その結果、半導体層の光吸収が強く発色状態
が確認しにくいものの実施例1と同様の作用を認めた。
[Example 3] A similar experiment was conducted in Example 1 using CdS and CdSe as the semiconductor layer instead of the a-8L photovoltaic layer. As a result, the same effect as in Example 1 was observed, although the semiconductor layer had strong light absorption and it was difficult to confirm the coloring state.

〔実施例4〕 実施例1において、電極2側にn層(a、−5t)を形
成しP層(a−5iC)上にエレクトロクロミック層5
 (I r (OH)X 、 Nl (OH)X I 
7タロシアニン錯体、鉄シアノ錯体)を形成し、その他
の構iヤ〜jを實、□B戸−よ 結             持、電気的消去の各機能
が確認できた。
[Example 4] In Example 1, an n layer (a, -5t) was formed on the electrode 2 side, and an electrochromic layer 5 was formed on the p layer (a-5iC).
(I r (OH)X , Nl (OH)X I
7 talocyanine complex, iron cyano complex), and the functions of binding and electrical elimination of other structures were confirmed.

〔実施例6〕 第2図に示すように、シリコン単結晶基板3を用いてP
層側に電極2を蒸着し、n層側にアイランド状に電導体
4、さらにエレクトロクロミック層6を形成し、対向電
極7及び電解質6と組み合せて記録素子を作成した。た
だし、各構成材料は、実施例−1及び−2の各材料を使
用した。
[Example 6] As shown in FIG. 2, P
An electrode 2 was deposited on the layer side, a conductor 4 was formed in an island shape on the n-layer side, and further an electrochromic layer 6 was formed, and combined with a counter electrode 7 and an electrolyte 6 to create a recording element. However, each constituent material used was each material of Examples-1 and -2.

実施例1と同様に光書き込み、メモリ保持、電気的消去
実験を行なったところ、発色スポットが若干にじむもの
\同様の効果を確認した。
When optical writing, memory retention, and electrical erasing experiments were conducted in the same manner as in Example 1, it was confirmed that the colored spots were slightly blurred, but similar effects were observed.

また、半導体基板として、Stのほか、G a A s
 。
In addition to St, as a semiconductor substrate, Ga As
.

InP等の化合物半導体も使用できることが判った。It has been found that compound semiconductors such as InP can also be used.

発明の効果 本発明を用いることにより、光書き込みによる情報記憶
が可能となり、かつ、電気的に消去可能で、書き込み消
去を繰り返し行うことができる耐熱性の優れた全く新し
い記録表示素子を提供できる0
Effects of the Invention By using the present invention, it is possible to provide a completely new recording/display element that enables information storage by optical writing, is electrically erasable, and has excellent heat resistance and can be repeatedly written and erased.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図および第2図は、本発明の記録表示素子の異なる
一実施例の基本構造を示す図である。 1・・・・・・基板、2・・・・・・電極、3・・・・
・・半導体層、4・・・・・・電導体、6・・・・・・
エレクトロクロミック層、6・・・・・・電解質、7・
・・・・・対向電極、8・・・・・・背面基材。
FIGS. 1 and 2 are diagrams showing the basic structure of different embodiments of the recording/display element of the present invention. 1...Substrate, 2...Electrode, 3...
...Semiconductor layer, 4...Electric conductor, 6...
Electrochromic layer, 6... Electrolyte, 7.
. . . Counter electrode, 8 . . . Back base material.

Claims (3)

【特許請求の範囲】[Claims] (1)光起電力を有する半導体層の片面に電極を設け、
裏面にアイランド状に電導体を設け、さらに前記アイラ
ンド状の電導体の上部にエレクトロクロミック層を積層
し、前記エレクトロクロミック層と対向電極とが電解質
に接したことを特徴とする記録表示素子。
(1) An electrode is provided on one side of a semiconductor layer having photovoltaic force,
A recording/display element characterized in that an island-shaped conductor is provided on the back surface, an electrochromic layer is laminated on top of the island-shaped conductor, and the electrochromic layer and a counter electrode are in contact with an electrolyte.
(2)半導体層はアモルファスシリコンであることを特
徴とする特許請求の範囲第1項記載の記録表示素子。
(2) The recording/display element according to claim 1, wherein the semiconductor layer is made of amorphous silicon.
(3)アモルファスシリコンからなる半導体層がp−i
−n/p−i−nの2種構造であることを特徴とする特
許請求の範囲第2項記載の記録表示素子。
(3) The semiconductor layer made of amorphous silicon is p-i
The recording/display element according to claim 2, characterized in that it has a two-type structure: -n/p-i-n.
JP60054914A 1985-03-19 1985-03-19 Record display element Pending JPS61214200A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60054914A JPS61214200A (en) 1985-03-19 1985-03-19 Record display element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60054914A JPS61214200A (en) 1985-03-19 1985-03-19 Record display element

Publications (1)

Publication Number Publication Date
JPS61214200A true JPS61214200A (en) 1986-09-24

Family

ID=12983868

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60054914A Pending JPS61214200A (en) 1985-03-19 1985-03-19 Record display element

Country Status (1)

Country Link
JP (1) JPS61214200A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009053613A (en) * 2007-08-29 2009-03-12 Kuraray Co Ltd Electrochromic display element and its manufacturing method
KR101127277B1 (en) 2006-12-05 2012-03-29 주식회사 엘지화학 Electrode for electrochromic device and electrochromic device having the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101127277B1 (en) 2006-12-05 2012-03-29 주식회사 엘지화학 Electrode for electrochromic device and electrochromic device having the same
JP2009053613A (en) * 2007-08-29 2009-03-12 Kuraray Co Ltd Electrochromic display element and its manufacturing method

Similar Documents

Publication Publication Date Title
JP4299328B2 (en) Electrochromic or photoelectrochromic equipment
US6992808B2 (en) Electrochromic display device and electrodeposition-type display device
JPS6444424A (en) Light modulation cell
JP2003241227A (en) Electrochemical display element and electrochemical display device
JPWO2002079868A1 (en) Display device and driving method thereof
US6535323B2 (en) Light-switching device
US4535329A (en) Constant current/constant voltage drive for an electrochromic display cell
US4599614A (en) Photoelectrochromic display
JPS61214200A (en) Record display element
Howard et al. Optical properties of reversible electrodeposition electrochromic materials
JPS61211849A (en) Recording element
JPS5852566B2 (en) Sanka Kangen Niyoru
JP4569110B2 (en) Electrochemical display device and driving method thereof
JPS6131851B2 (en)
JPH0785147B2 (en) Electrochromic display device
JPS60200235A (en) Electrochromic display device
JPS6320977Y2 (en)
JPS61103127A (en) Optical recording medium
GB2054936A (en) Electrochromic display device
Edwards et al. A bistable viologen‐TiO2 color switch
JPH04256928A (en) Information recording medium
JPH0439744B2 (en)
JPS62100740A (en) Optical recording medium
JPS63119035A (en) Erasable memory element
JPH022527A (en) Symmetric electrochromic display device