JPS63119035A - Erasable memory element - Google Patents
Erasable memory elementInfo
- Publication number
- JPS63119035A JPS63119035A JP61264572A JP26457286A JPS63119035A JP S63119035 A JPS63119035 A JP S63119035A JP 61264572 A JP61264572 A JP 61264572A JP 26457286 A JP26457286 A JP 26457286A JP S63119035 A JPS63119035 A JP S63119035A
- Authority
- JP
- Japan
- Prior art keywords
- type
- electrode
- writing
- photovoltaic element
- amorphous silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015654 memory Effects 0.000 title claims description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 11
- 238000004040 coloring Methods 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 239000000470 constituent Substances 0.000 claims 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 229910052793 cadmium Inorganic materials 0.000 claims 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 6
- 239000011521 glass Substances 0.000 abstract description 4
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 abstract description 3
- 229910000423 chromium oxide Inorganic materials 0.000 abstract description 3
- 239000003086 colorant Substances 0.000 abstract description 3
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 abstract description 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- 229910001930 tungsten oxide Inorganic materials 0.000 abstract description 3
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- 230000001681 protective effect Effects 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 229910052714 tellurium Inorganic materials 0.000 description 4
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- HVAFGESYLSBECZ-UHFFFAOYSA-N borotrithioic acid Chemical compound SB(S)S HVAFGESYLSBECZ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
光で記録し光で可成する消去可能な一記憶素子に関し特
に光デイスクメモリに関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to optically recorded and optically erasable storage elements, and in particular to optical disk memories.
従来の技術
従来、消去可能な光デイスクメモリとしては、テルルと
酸化テルルの結晶−非晶質の変化を用いるものがある。BACKGROUND OF THE INVENTION Conventionally, erasable optical disk memories have been developed using crystalline-amorphous variations of tellurium and tellurium oxide.
すなわち第２図に示すようにアクリルまたはポリカーボ
ネートで作られたディスク基体２ｏ上にテルルと酸化テ
ルルの混合薄膜２１を形成し、レーザ２２からの光をし
ぼって薄膜２１に照射すると急熱急冷されて照射された
部分２３は結晶化する。これが書込みの場合である。結
晶化した部分２３と薄膜２１の非晶質の部分を光学的に
反射率の差でもって書き込まれた内容を読み出す。書き
込まれたものを消去する場合は、レーザ２２の出力を弱
めて照射し結晶化した部分２３を非晶質にもどす。That is, as shown in FIG. 2, a mixed thin film 21 of tellurium and tellurium oxide is formed on a disk substrate 2o made of acrylic or polycarbonate, and when the light from a laser 22 is focused and irradiated onto the thin film 21, it is rapidly heated and cooled. The irradiated portion 23 crystallizes. This is the case for writing. The written content is read out based on the optical reflectance difference between the crystallized portion 23 and the amorphous portion of the thin film 21. When erasing what has been written, the output of the laser 22 is weakened and irradiated to return the crystallized portion 23 to an amorphous state.
発明が解決しようとする問題点
しかし、このような方式では、レーザには大きな出力が
必要で、１μばで書き込みには９ｍＷ 。Problems to be Solved by the Invention However, in this type of system, the laser requires a large output power, 9 mW for writing with 1μ.
消去でさえ１．５〜２ｍＷ必要であった。光ディスクの
軸２４を９００〜１８００ｒｐｍ で回転させているが
、書き込みを早くするためには、回転速度を高くしなけ
ればならない。そのためにレーザパルスを短時間にして
高エネルギを出さなければ、結晶−非晶質の変化が起こ
らな込。すなわち高速書き込みには高エネルギが出せる
レーザが必要であった。Even erasure required 1.5-2 mW. The shaft 24 of the optical disk is rotated at 900 to 1800 rpm, but in order to speed up writing, the rotation speed must be increased. Therefore, unless the laser pulse is short and high energy is emitted, a crystal-amorphous change will not occur. In other words, high-speed writing requires a laser that can produce high energy.
問題点を解決するための手段
そこで本発明は、エネルギが低くても書き込み可能なよ
うに水素化された非晶質シリコンよりなシかつタンデム
構造を有する光起電力素子を用い、電気化学的発色物質
（以下ＥＣ物質と略す）を着色させるものである。Means for Solving the Problems Therefore, the present invention uses a photovoltaic element made of hydrogenated amorphous silicon and having a tandem structure so that writing is possible even at low energy. It colors a substance (hereinafter abbreviated as EC substance).
作 用
レーザ光線を５００ ｍ Ｗ／−程度のエネルギ密度で
光起電力素子に照射すると電力を発生する。Working When a photovoltaic element is irradiated with a laser beam at an energy density of about 500 mW/-, electric power is generated.
レーザ光を１μ−に絞るとエネルギは５ ｎＷ程度で従
来の場合に比べると１／１゜６以下のエネルギで良い。When the laser beam is focused to 1 μ-, the energy is about 5 nW, which is less than 1/1°6 compared to the conventional case.
得られた電力をＥＣ物質に与えて発色させ、反射率を変
えることによシ、光学的に読み取ることができる。The obtained electric power is applied to the EC material to cause it to develop color, and by changing the reflectance, it can be read optically.
実施例 以下、本発明の一実施例を図面にもとづいて説明する。Example Hereinafter, one embodiment of the present invention will be described based on the drawings.
第１図において、ガラス基板１上に書込電極２、本実施
例ではＩ Ｔ Ｏ（Ｉｎｄｉｕｍ Ｔｌｎｃｋｉｄｅ）
。In FIG. 1, a write electrode 2 is provided on a glass substrate 1, and in this embodiment, an ITO (Indium Tlnckide) electrode is disposed on a glass substrate 1.
.
を形成し、その上知光起電力素子３を形成する。, and then a photovoltaic element 3 is formed thereon.
光起電力素子３は水素化された非晶質シリコン（以下ａ
−８１と略す）を材料として用いた。構造は書込電極２
側から６層あり、順にｎ型、１型。The photovoltaic element 3 is made of hydrogenated amorphous silicon (hereinafter a
-81) was used as the material. The structure is write electrode 2
There are 6 layers from the side, N type and 1 type in that order.
ｐ型、ｎ型、ｉ型、ｐ型のａ−８ｉ膜を重ねている。P-type, n-type, i-type, and p-type a-8i films are stacked on top of each other.
ｎ型、１型、ｐ型の３層で光起電力素子となシ得るが、
ここではこの単一素子を直列に二重にしたタンデム構造
にしである。２素子直列になっているため単一のものに
比べ起電圧が２倍になる。単一素子では入射光１００ｍ
Ｗ／にＪ 程度で開放電圧ハ０．８〜Ｏ，ｅ Ｖ
得られるため、タンデム構造では、１．６〜１．８ｖ得
られる。A photovoltaic device can be formed with three layers of n-type, 1-type, and p-type, but
Here, this single element is doubled in series to form a tandem structure. Since two elements are connected in series, the electromotive force is twice as high as that of a single element. For a single element, incident light is 100m
The open circuit voltage is 0.8~O, e V at around W/J.
Therefore, in the tandem structure, 1.6 to 1.8v can be obtained.
ａ−３ｔはＳｉＨ４を高周波容量結合型グロー放電法で
分解し基板１を２００〜３００℃に熱して堆積させる。A-3t is deposited by decomposing SiH4 by a high frequency capacitively coupled glow discharge method and heating the substrate 1 to 200 to 300°C.
ｐ型ａ−８１はＳｉＨ４の他にＢ２Ｈ６を不純物として
添加したもので、ｎ型ａ−８ｉ はＳＬＨにＰＨ３を添
加したものである。The p-type a-81 has B2H6 added as an impurity in addition to SiH4, and the n-type a-8i has PH3 added to SLH.
この上に電荷橋渡し電極４を形成する。金を１００〜３
００人蒸着して使用した。A charge bridging electrode 4 is formed on this. 100-3 gold
00 people were used for vapor deposition.
プロトン供給体層６には酸化クロムを約２０００人の厚
さにしたものか、または酸化クロム膜と２０チホウ酸を
含む二酸化ケイ素膜２層構造とし合計で約３００ＯＡの
厚さにしたものを用いた。The proton donor layer 6 is made of chromium oxide with a thickness of approximately 2,000 OA, or a two-layer structure of a chromium oxide film and a silicon dioxide film containing 20 thioboric acid with a total thickness of approximately 300 OA. there was.
電気化学的発色層６には酸化タングステンを用い約２０
００人蒸着した。読取電極７にはＩＴＯを用いスパッタ
リング法で約１０００Ａ堆積させた。最後に保護膜８と
してスパッタリング法で堆積させたＳ ｉＯ２膜を用い
た。膜厚は約５０００人である。The electrochemical coloring layer 6 is made of tungsten oxide and has a thickness of about 20
00 people were deposited. For the reading electrode 7, ITO was deposited to a thickness of about 1000 A by sputtering. Finally, an SiO2 film deposited by sputtering was used as the protective film 8. The film thickness is approximately 5,000 people.
このようにして消去可能な記憶素子が完成するが、この
動作方法について第１図をもとに説明する。In this way, an erasable memory element is completed, and its operating method will be explained with reference to FIG.
まず書き込み方法であるが、ガラス基板１を軸９で回転
させ書き込み用レーザ１ｏを用いて光起電力素子３に５
００ ｍＷ／ｉ程度の光量になるように調整してレーザ
光１ｏ−１を照射する。First, regarding the writing method, the glass substrate 1 is rotated around the axis 9, and a writing laser 1o is used to write 5
Laser light 1o-1 is irradiated while adjusting the light intensity to be about 00 mW/i.
光起電力素子３は書込電極２にはエレクトロンを、電荷
橋渡し電極４にはプロトンを送る。このプロトンは、プ
ロトン供給体層６を経て電気化学的発色層６に達する。The photovoltaic element 3 sends electrons to the write electrode 2 and protons to the charge bridging electrode 4. These protons reach the electrochemical coloring layer 6 via the proton donor layer 6.
光起電力素子３はタンデム構造にしであるため、１．６
ｌ程度の電位差を生じるので電気化学的発色層６は、レ
ーザ光１ｏ−１の照射された部分６−１のみ発色する。Since the photovoltaic element 3 has a tandem structure, 1.6
Since a potential difference of about 1 is generated, the electrochemical coloring layer 6 colors only the portion 6-1 irradiated with the laser beam 1o-1.
酸化タングステンの場合は青色である。書き込みの際に
は、外部スイッチ１１ （１１−１，１１−２，１１−
３゜１ｌ−４）は、１１−１と１１−２とが接続されて
おシ、１１−３と１１−４は開放状態である。In the case of tungsten oxide, it is blue. When writing, use external switches 11 (11-1, 11-2, 11-
3°1l-4), 11-1 and 11-2 are connected, and 11-3 and 11-4 are open.
なお、電荷橋渡し電極４には金の蒸着膜１００〜３００
人を用いているが、横方向の抵抗が小さい場合は発色変
化部分６−１かにじむ場合がある。Incidentally, the charge bridging electrode 4 has a gold vapor deposited film of 100 to 300 nm.
Although a person is used, if the lateral resistance is small, the color change portion 6-1 may bleed.
蒸着条件によっては、島状に堆積されるため特殊な加工
は不要であるが、必要に応じて島状にエツチングしてお
いた方が良い。Depending on the evaporation conditions, no special processing is necessary because the material is deposited in the form of islands, but it is better to etch it into the form of islands if necessary.
次に読み出し方法について述べる。Next, the reading method will be described.
１２は読み出し用レーザであり、レーザ光１２−１は書
き込みレーザ光１ｏ−１よシェネルギは小さくて良い。Reference numeral 12 denotes a reading laser, and the laser beam 12-1 may have smaller sheer energy than the writing laser beam 1o-1.
発色部分６−１と他の部分θとのレーザ光１２−１の反
射光１２−２強度を光センサ１３で検知し、増幅器１４
等で信号処理を行なう。The intensity of the reflected light 12-2 of the laser beam 12-1 between the colored portion 6-1 and the other portion θ is detected by the optical sensor 13, and the intensity is detected by the amplifier 14.
etc. to perform signal processing.
最後に消去方法について述べる。Finally, we will discuss the erasing method.
外部スイッチ１１を次のように接続する。すなわち、１
１−１と１１−３とを接続し、１１−２と１１−４とを
接続する。こうすることによって外部電源１５から電圧
が加えられ、電気化学的発色層６には書込み時とは逆の
電流が流れ、発色部分６−１は、もとの状態にもどる。Connect the external switch 11 as follows. That is, 1
1-1 and 11-3 are connected, and 11-2 and 11-4 are connected. By doing this, a voltage is applied from the external power source 15, a current opposite to that during writing flows through the electrochemical coloring layer 6, and the coloring portion 6-1 returns to its original state.
外部電源１６は、光起電力素子を用いても良いし、その
際スイッチ１１も駆動できるように回路処理しておけば
、消去時を含めて外部の装置に依存することなく書き込
み読出し、消去が行なえる。The external power source 16 may be a photovoltaic element, and in that case, if the circuit is processed so that it can also drive the switch 11, writing, reading, and erasing can be performed without depending on an external device, including during erasing. I can do it.
発明の効果
以上述べてきたように本発明によって書き込み時の光エ
ネルギが小さくでき、しかも消去可能な記憶素子を提供
することができる。Effects of the Invention As described above, according to the present invention, it is possible to reduce the optical energy during writing and provide an erasable memory element.
第１図は本発明による消去可能な記憶素子の使用状態を
示す概略図、第２図は従来の記憶素子の使用状態を示し
た図である。
２・・・・・・書込電極、３・・・・・・光起電力素子
、４・・・・・・電荷橋渡し電極、５・・・・・・プロ
トン供給層、６・・・・・・電気化学的発色層、７・・
・・・・読取電極、９・・・・・・回転軸、１ｏ・・・
・・・書き込みレーザー、１１・・・・・・外部スイッ
チ、１２・・・・・・読み出しレーザー、１６・・・・
・・電源。FIG. 1 is a schematic diagram showing how an erasable storage element according to the present invention is used, and FIG. 2 is a diagram showing how a conventional storage element is used. 2...Writing electrode, 3...Photovoltaic element, 4...Charge bridging electrode, 5...Proton supply layer, 6... ...Electrochemical coloring layer, 7...
...Reading electrode, 9...Rotation axis, 1o...
...Writing laser, 11...External switch, 12...Reading laser, 16...
··power supply.
Claims (3)
トン供給体層、電気化学的発色層および読取電極を少な
くとも構成要素とし上記各構成要素を上述した順序で有
してなり、上記光起電力素子が水素化された非晶質シリ
コンよりなりかつタンデム構造を有することを特徴とす
る消去可能な記憶素子。(1) It has at least a writing electrode, a photovoltaic element, a charge bridging electrode, a proton donor layer, an electrochemical coloring layer, and a reading electrode as constituent elements, and each of the above constituent elements is arranged in the above order, and the above-mentioned light An erasable memory element characterized in that the electromotive force element is made of hydrogenated amorphous silicon and has a tandem structure.
ｐ型、の順に計６層よりなるタンデム構造を有する水素
化された非晶質シリコン光起電力素子を構成要素とする
ことを特徴とする特許請求の範囲第１項記載の消去可能
な記憶素子。(2) From the write electrode side: n type, i type, p type, n type, i type,
The erasable memory element according to claim 1, characterized in that the element is a hydrogenated amorphous silicon photovoltaic element having a tandem structure consisting of a total of six layers in the order of p-type. .
れた非晶質シリコン光起電力素子、インジウムかスズか
カドミウム単独または混合の酸化導電膜、第２のｎ型、
ｉ型、２層の水素化された非晶質シリコン光起電力素子
を構成要素とする特許請求の範囲第１項記載の消去可能
な記憶素子。(3) From the write electrode side: a first n-type, i-type two-layer hydrogenated amorphous silicon photovoltaic element, an oxide conductive film of indium, tin, cadmium alone or a mixture, and a second n-type ,
An erasable memory element according to claim 1, comprising an i-type, two-layer hydrogenated amorphous silicon photovoltaic element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61264572A JPS63119035A (en) | 1986-11-06 | 1986-11-06 | Erasable memory element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61264572A JPS63119035A (en) | 1986-11-06 | 1986-11-06 | Erasable memory element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63119035A true JPS63119035A (en) | 1988-05-23 |
Family
ID=17405152
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61264572A Pending JPS63119035A (en) | 1986-11-06 | 1986-11-06 | Erasable memory element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63119035A (en) |
-
1986
- 1986-11-06 JP JP61264572A patent/JPS63119035A/en active Pending
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