JPS61211965A - Photo-secondary cell - Google Patents
Photo-secondary cellInfo
- Publication number
- JPS61211965A JPS61211965A JP60053112A JP5311285A JPS61211965A JP S61211965 A JPS61211965 A JP S61211965A JP 60053112 A JP60053112 A JP 60053112A JP 5311285 A JP5311285 A JP 5311285A JP S61211965 A JPS61211965 A JP S61211965A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- photo
- semiconductor layers
- serving
- active material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- 239000003792 electrolyte Substances 0.000 claims abstract description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims abstract description 4
- 239000007772 electrode material Substances 0.000 claims description 4
- 239000011149 active material Substances 0.000 abstract description 17
- 239000000758 substrate Substances 0.000 abstract description 9
- 229910000314 transition metal oxide Inorganic materials 0.000 abstract description 5
- 229910018661 Ni(OH) Inorganic materials 0.000 abstract description 2
- 150000007661 iron cyano complex Chemical class 0.000 abstract description 2
- 239000011521 glass Substances 0.000 abstract 1
- 238000007599 discharging Methods 0.000 description 3
- -1 04 is dissolved Chemical class 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- DCYOBGZUOMKFPA-UHFFFAOYSA-N iron(2+);iron(3+);octadecacyanide Chemical compound [Fe+2].[Fe+2].[Fe+2].[Fe+3].[Fe+3].[Fe+3].[Fe+3].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] DCYOBGZUOMKFPA-UHFFFAOYSA-N 0.000 description 2
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910019695 Nb2O6 Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000005486 organic electrolyte Substances 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000007774 positive electrode material Substances 0.000 description 1
- 229960003351 prussian blue Drugs 0.000 description 1
- 239000013225 prussian blue Substances 0.000 description 1
- 239000002510 pyrogen Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/043—Mechanically stacked PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M14/00—Electrochemical current or voltage generators not provided for in groups H01M6/00 - H01M12/00; Manufacture thereof
- H01M14/005—Photoelectrochemical storage cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Hybrid Cells (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、太陽光、螢光灯等の光により充電を行なう二
次電池に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a secondary battery that is charged by light such as sunlight or a fluorescent lamp.
従来−の技術
太陽光などあ光エネルギーを利用した電池は、シリコン
単品、アモルファスシリコン（以下ａ −８１と略す）
、ＣｄＳ等の半導体を用いたものが提供されている。こ
れらの光起電力を利用した電池は、すべて−次電池であ
り、光が照射されている時だけしか使用できない。その
ため、例えば、夜間も駆動させる機器に太陽電池を応用
する場合、昼間太陽電池の出力を充電しておくためのコ
ンデンサーもしくは二次電池が新たに必要となる。Conventional technology Batteries that utilize light energy such as sunlight are made of single silicon or amorphous silicon (hereinafter abbreviated as a-81).
, CdS, and other semiconductors are available. All of these batteries that utilize photovoltaic power are secondary batteries and can only be used when exposed to light. Therefore, for example, when solar cells are used in equipment that operates at night, a new capacitor or secondary battery is required to charge the output of the solar cells during the day.
発明が解決しようとする問題点
従来、一つの素子で光エネルギーを一次電池としての機
能と二次電池としての充電機能とを兼ね備えたものはな
かった。Problems to be Solved by the Invention Hitherto, there has been no single element that combines the function of using light energy as a primary battery and the charging function of a secondary battery.
問題点を解決するための手段
光起電力を有する２つの半導体層の片面にそれぞれ電極
活物質を設け、２つの活物質を電解質に接触させた下記
の電池を構成する。Means for Solving the Problems The following battery is constructed in which an electrode active material is provided on one side of each of two semiconductor layers having photovoltaic force, and the two active materials are brought into contact with an electrolyte.
作 用
前述の電池構成において、昼間使用する場合、第１電極
と第２電極間および第３−第４電極間に負荷をかけるこ
とにより半導体層の光起電力を利用しく一次電池の作用
）、かつ第１電極と第４電極を閉回路状態にして余剰の
光起電力を活物質に充電することができる。夜間使用す
る場合、第２電極と第３電極に負荷をかけることにより
活物質第１図に示すようにガラス透明基板１（プラスチ
ックスでよい）上に第１電極としてＩＴＯ透明電極２
（Ｉｎ２Ｏ３，ＳｎＯ２，ＩＴＯ，Ａｕ等でもよい）を
を設け、その上に光起電力を有するａ−３ｉの半導体層
３ （ａ−３ｉＣ（ｐ） ／ａ−３ｔ（ｉ）／ａ−３ｔ
（ｎ） ）をｐ、ｉ。Function In the above battery configuration, when used during the day, the photovoltaic force of the semiconductor layer is utilized by applying a load between the first electrode and the second electrode and between the third and fourth electrodes (primary battery function), Moreover, the active material can be charged with surplus photovoltaic force by placing the first electrode and the fourth electrode in a closed circuit state. When used at night, by applying a load to the second and third electrodes, the active material as shown in FIG.
(In2O3, SnO2, ITO, Au, etc. may be used) is provided, and an a-3i semiconductor layer 3 (a-3iC(p) /a-3t(i)/a-3t) having a photovoltaic force is provided thereon.
(n)) p, i.
ｎの順に設け、更にオーミック接触のよい導電層として
Ａ４を用いて蒸着し第２電極とする。なおＡＩの代わり
にＡ ｌ／Ｃｒ 、 Ａ ｌ ／Ａｕ 、 Ａｕ等でも
よい。They are provided in the order of n, and A4 is further vapor-deposited as a conductive layer with good ohmic contact to form a second electrode. Note that Al/Cr, Al/Au, Au, etc. may be used instead of AI.
更に、第１の活物質層６として遷移金属酸化物ＷＯ３を
積層する。Furthermore, a transition metal oxide WO3 is laminated as the first active material layer 6.
一方、同様に、透明基板１１上に第４電極としての透明
電極１ｏを設けその上にａ−３Ｌの半導体層９．第３電
極としての導電層８及び第２活物質層７（鉄シアノ錯体
、 Ｉｒ（ＯＨ）ｘ、Ｎ１（ＯＨ）工。On the other hand, similarly, a transparent electrode 1o as a fourth electrode is provided on the transparent substrate 11, and a semiconductor layer 9 of a-3L is provided thereon. A conductive layer 8 as a third electrode and a second active material layer 7 (iron cyano complex, Ir(OH)x, N1(OH)).
遷移金属酸化物の一部還元体等）を積層する。ただし半
導体層９は、ｎ、 ｉ、 ｐの順に設ける。最後に
２つの該活物質が電解質（Ｌｉ塩系−プロピレンカーボ
ネート溶液に接触するように組み立てる。(partially reduced form of transition metal oxide, etc.) is layered. However, the semiconductor layer 9 is provided in the order of n, i, and p. Finally, the two active materials are assembled so as to be in contact with an electrolyte (Li salt-based propylene carbonate solution).
今、基板の両側より光照射した場合、第１−第２電極間
及び第３−第４電極間で約０．６ｖの起電力が得られた
。この時、第２−第３電極を閉回路状態にしておくと、
第１−第４電極間で約２倍の出力電圧（約１ｖ）が得ら
れた。Now, when the substrate was irradiated with light from both sides, an electromotive force of about 0.6 V was obtained between the first and second electrodes and between the third and fourth electrodes. At this time, if the second and third electrodes are kept in a closed circuit state,
Approximately twice the output voltage (approximately 1 V) was obtained between the first and fourth electrodes.
次に第２−第３電極を開回路状態にし、第１−第４電極
を閉回路状態にすると、第４電極を正極。Next, when the second and third electrodes are brought into an open circuit state and the first and fourth electrodes are brought into a closed circuit state, the fourth electrode becomes a positive electrode.
第１電極を負極とした充電電流が流れ、第１活物質は、
還元され第２活物質は酸化される。A charging current flows with the first electrode as the negative electrode, and the first active material is
The reduced second active material is oxidized.
次に第１−第４電極を開回路状態にして、第２−第３電
極間に外部負荷をかけると、第３電極を正極とし第２電
極を負極とした出力電圧約１ｖの電池が形成された。Next, when the first and fourth electrodes are placed in an open circuit state and an external load is applied between the second and third electrodes, a battery with an output voltage of approximately 1V is formed with the third electrode as the positive electrode and the second electrode as the negative electrode. It was done.
以上、本素子を用いて光充電−負荷（１ｏｏＫΩ）放電
を繰り返し行なったところ約１ｖで１０００回以上の充
放電ができた。As described above, when photocharging and discharging with a load (10KΩ) were repeatedly performed using this device, more than 1000 charging and discharging cycles were possible at approximately 1V.
本実験で、第１活物質としてはＷＯ２の他に、一般に二
次電池の正極活物質として報告されている。In this experiment, the first active material used was WO2, which is generally reported as a positive electrode active material for secondary batteries.
７２０５９Ｍ００３．Ｎｂ２Ｏ６，ＴｉＯ２，Ｃｒ２ｏ
３．ＺｒＯ２等の遷移金属酸化物が使用できた。さらに
一般にエレクトロクロミック材料として報告されている
パイオロゲンを官能基に有すポリマー、ポリピロール、
ポリチオフェン、ポリチニレン等の有機化合物、プルシ
アンブルー、ベルリンブルー等の鉄シアノ錯体、フタロ
シアニン金属錯体が使用できた。72059M003. Nb2O6, TiO2, Cr2o
3. Transition metal oxides such as ZrO2 could be used. Furthermore, polypyrrole, a polymer with pyrogen as a functional group, which is generally reported as an electrochromic material,
Organic compounds such as polythiophene and polythinylene, iron cyano complexes such as Prussian blue and Berlin blue, and phthalocyanine metal complexes could be used.
電解質トシテハ、Ｌ ｉＢ Ｆ４ ＋ Ｌ ｉ Ｃ１２
０４等ノＬｉ塩を溶解したプロピレンカーポネー゛ト、
γ−ブチロラクトン等の有機電解質、ＫＢｒ、ＫＣｌ等
を溶解した水溶液が使用できた。Electrolyte, L iB F4 + L i C12
Propylene carbonate in which Li salt such as 04 is dissolved,
An aqueous solution containing an organic electrolyte such as γ-butyrolactone, KBr, KCl, etc., could be used.
第２活物質としては、前述の第１活物質の低次酸化物（
もしくは還元体）が使用でき、その他のＩ ｒ （ＯＨ
） ｘ 、Ｎ ｉ（ＯＨ） ｘ等の金属水酸化物、官能
基を表面に有するカーボン（主にグラファイト）が使用
できた。As the second active material, a lower oxide (
or reduced form) can be used, and other I r (OH
) x, metal hydroxides such as Ni(OH) x, and carbon (mainly graphite) having functional groups on the surface could be used.
（施例２コ
実施例１において、ａ−３ｉの半導体層のかわりに、半
導体層としてＣｄＳ、ＣｄＳｅ、ＺｎＳ、Ｚｎ５ｅ。(Example 2) In Example 1, CdS, CdSe, ZnS, and Zn5e were used as semiconductor layers instead of the a-3i semiconductor layer.
ＣｄＴｅ等のｎ−Ｖｌ化合物の多結晶光起電力層を用い
て、同様の実験を行なった。その結果光による充電及び
二次電池としての機能が確認できた。Similar experiments were conducted using polycrystalline photovoltaic layers of n-Vl compounds such as CdTe. As a result, it was confirmed that it could be charged by light and functioned as a secondary battery.
〔実施例３〕
基板を用いずに、実施例１における第１．第２の半導体
層３，９をシリコン単結晶基板とし、その他の各材料は
、実施例１に記載の材料を用いて素子を組み立て同様の
実験を行なったところ光による充電及び放電が確認でき
た。また単結晶基板としてＧａＰ、ＧａＡｓ、ＩｎＡｓ
、ＩｎＰ等の化合物半導体も使用できた。−
発明の効果
本発明を用いることにより、太陽光、螢光灯などの光エ
ネルギーを用いたいわゆる太陽電池の機能と、さらに光
エネルギーを化学エネルギーの形で電気的に充電し、必
要な時に電気エネルギーとして利用できる全く新しい光
二次電池を提供することができ、素子の両面に半導体層
を設けているので片面に半導体層を設ける光二次電池よ
り２倍の電力を得ることができる。[Example 3] The first example in Example 1 was performed without using a substrate. The second semiconductor layers 3 and 9 were made of silicon single-crystal substrates, and the other materials described in Example 1 were used to assemble the device and conduct a similar experiment, whereupon charging and discharging by light was confirmed. . Also, GaP, GaAs, InAs can be used as a single crystal substrate.
, InP, and other compound semiconductors could also be used. − Effects of the Invention By using the present invention, it has the function of a so-called solar cell that uses light energy from sunlight, fluorescent lamps, etc., and it also charges light energy electrically in the form of chemical energy and generates electricity when needed. It is possible to provide a completely new secondary photovoltaic cell that can be used as energy, and since semiconductor layers are provided on both sides of the element, it is possible to obtain twice as much power as a secondary photovoltaic battery that has a semiconductor layer on one side.
図は本発明の一実施例の光二次電池の基本構成図である
。
１・・・・・・基板、２・・・・・・第１電極、３・・
・・・・第１半導体、４・・・・・・第２電極、６・・
・・・・第１活物質、６・・・・・・電解質、７・・・
・・・第２活物質、８・・・・・・第３電極、９・・・
・・・第２半導体層、１ｏ・・・・・・第４電極、１１
・・・・・・基板。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名ｌ羞
般The figure is a basic configuration diagram of a secondary photovoltaic battery according to an embodiment of the present invention. 1... Substrate, 2... First electrode, 3...
...First semiconductor, 4...Second electrode, 6...
...First active material, 6... Electrolyte, 7...
...Second active material, 8...Third electrode, 9...
...Second semiconductor layer, 1o...Fourth electrode, 11
······substrate. Name of agent: Patent attorney Toshio Nakao and one other person
Claims (2)
上に電極活物質層を積層し、第２の半導体層の両面にも
電極を設け一方の電極上に第２の電極活物質層を積層し
、２つの前記電極活物質が電解質を介して対向させたこ
とを特徴とする光二次電池。(1) Electrodes are provided on both sides of the first semiconductor layer, an electrode active material layer is stacked on one electrode, electrodes are also provided on both sides of the second semiconductor layer, and a second electrode active material layer is stacked on one electrode. A photo secondary cell characterized in that material layers are laminated and the two electrode active materials are opposed to each other with an electrolyte interposed therebetween.
る特許請求の範囲第１項記載の光二次電池。(2) The photo secondary battery according to claim 1, wherein the semiconductor layer is made of amorphous silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60053112A JPS61211965A (en) | 1985-03-15 | 1985-03-15 | Photo-secondary cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60053112A JPS61211965A (en) | 1985-03-15 | 1985-03-15 | Photo-secondary cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61211965A true JPS61211965A (en) | 1986-09-20 |
| JPH0582035B2 JPH0582035B2 (en) | 1993-11-17 |
Family
ID=12933712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60053112A Granted JPS61211965A (en) | 1985-03-15 | 1985-03-15 | Photo-secondary cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61211965A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6319775A (en) * | 1986-07-10 | 1988-01-27 | Rikagaku Kenkyusho | Photo storage battery comprising semiconductor electrode and polynuclear complex |
| WO2012046325A1 (en) * | 2010-10-07 | 2012-04-12 | グエラテクノロジー株式会社 | Secondary cell |
| WO2012046326A1 (en) * | 2010-10-07 | 2012-04-12 | グエラテクノロジー株式会社 | Photovoltaic cell |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59157976A (en) * | 1983-02-18 | 1984-09-07 | エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド | Photoelectrode and photochemical cell |
-
1985
- 1985-03-15 JP JP60053112A patent/JPS61211965A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59157976A (en) * | 1983-02-18 | 1984-09-07 | エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド | Photoelectrode and photochemical cell |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6319775A (en) * | 1986-07-10 | 1988-01-27 | Rikagaku Kenkyusho | Photo storage battery comprising semiconductor electrode and polynuclear complex |
| WO2012046325A1 (en) * | 2010-10-07 | 2012-04-12 | グエラテクノロジー株式会社 | Secondary cell |
| WO2012046326A1 (en) * | 2010-10-07 | 2012-04-12 | グエラテクノロジー株式会社 | Photovoltaic cell |
| JP5342071B2 (en) * | 2010-10-07 | 2013-11-13 | グエラテクノロジー株式会社 | Solar cell |
| US9711668B2 (en) | 2010-10-07 | 2017-07-18 | Guala Technology Co., Ltd. | Photovoltaic cell |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0582035B2 (en) | 1993-11-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |