JPS61208273A - Tactile sensor - Google Patents
Tactile sensorInfo
- Publication number
- JPS61208273A JPS61208273A JP4883785A JP4883785A JPS61208273A JP S61208273 A JPS61208273 A JP S61208273A JP 4883785 A JP4883785 A JP 4883785A JP 4883785 A JP4883785 A JP 4883785A JP S61208273 A JPS61208273 A JP S61208273A
- Authority
- JP
- Japan
- Prior art keywords
- beams
- tactile sensor
- pedestal
- sphere
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000009792 diffusion process Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000005553 drilling Methods 0.000 claims description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 abstract description 13
- 238000000034 method Methods 0.000 abstract description 10
- 229910052594 sapphire Inorganic materials 0.000 abstract description 5
- 239000010980 sapphire Substances 0.000 abstract description 5
- 229920002379 silicone rubber Polymers 0.000 abstract description 3
- 239000004945 silicone rubber Substances 0.000 abstract description 3
- 238000004382 potting Methods 0.000 abstract 1
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 235000006693 Cassia laevigata Nutrition 0.000 description 4
- 241000522641 Senna Species 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229940124513 senna glycoside Drugs 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 241001510071 Pyrrhocoridae Species 0.000 description 1
- 244000188014 Spathodea campanulata Species 0.000 description 1
- 235000017899 Spathodea campanulata Nutrition 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 210000000697 sensory organ Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は触覚センナに関し、特に半導体で作らしGI
Mットの手などに使用される触覚センナに関する。[Detailed Description of the Invention] [Industrial Field of Application] The present invention relates to a tactile sensor, and particularly to a tactile sensor made of semiconductor.
This invention relates to a tactile sensor used for hands, etc.
近年、安価で高性能なマイクロコンビーータが普及し、
それらを用いることによシ様々な産業分野で自動化ろる
いはロボット化が進められつつある。しかし、現在実用
化されているロボットは、ある定まった形、定まった大
きさあるいは定まった重さの物体を持ち上げたシ、運ん
だシ、あるいは加工9組立等の作業を一定のプログラム
によってしか行うことができない。In recent years, inexpensive and high-performance microcombinators have become popular.
By using these tools, automation and robotization are progressing in various industrial fields. However, robots currently in practical use can only carry out tasks such as lifting, carrying, processing, and assembling objects of a certain shape, size, or weight based on a certain program. I can't.
一方、消費者層の多様化により、多品種少量生産の傾向
が強くなシ、FMS (Flexible Manuf
acturing8ystem)と呼ばれる自動化技術
の開発が叫ばれている。この様な自動化の流れに於ては
人間の感覚器官に代る様々なセンチをロポ、トあるいは
自動機械に装備し、制御するための情報をセンナから取
入れる必要がある。そのようなセンサの中でもロボット
の指あるいは手に装備され、対象物に直接触れることに
より、対象物の形状を認識したハあるいはその圧覚から
、対象物の硬さを判断したシ、また細かい部品の組立作
業の際の対象物がらの力を測定したりするだめの触覚セ
ンサの必要性が認識されている。On the other hand, due to the diversification of consumer groups, there is a strong tendency towards high-mix, low-volume production.FMS (Flexible Manufacture)
There is a call for the development of an automation technology called "acturing8 system". In this trend of automation, it is necessary to equip robots, robots, or automatic machines with various sensors that replace human sensory organs, and to receive information from sensors for control. Among such sensors, sensors are equipped on the fingers or hands of robots and are used to recognize the shape of an object by directly touching it, or to judge the hardness of the object from the sense of pressure. There is a recognized need for tactile sensors to measure forces on objects during assembly operations.
従来報告されている触覚センサとしては、感圧導電性ゴ
ムを用いたもの、マイクロスイッチを用いたもの、ある
いはカーボンファイバを用いたもの等様々でおる(自動
化技術第14巻第6号37頁〜42頁及び61頁〜70
頁)。これらの触覚センサは大きすぎたシ、あるいは直
線性や再現性が悪かったり、あるいはオン−オフ情報し
か検出できないという欠点がある。また圧覚分布を測定
したりする場合、単一の圧覚センサをアレイ状に並べる
必要があるが、信号処理のための配線が極めて多くなシ
、かクロボ、トの指や手の可動部にとシつけられた場合
、信頼性に劣る。There are a variety of tactile sensors that have been reported so far, including those using pressure-sensitive conductive rubber, those using microswitches, and those using carbon fiber (Automatic Technology Vol. 14, No. 6, p. 37 - Pages 42 and 61-70
page). These tactile sensors have drawbacks such as being too large, having poor linearity and repeatability, or being able to detect only on-off information. In addition, when measuring pressure distribution, it is necessary to arrange single pressure sensors in an array, but this is difficult to do for the moving parts of the fingers and hands of computers, robots, and robots, which require an extremely large number of wiring lines for signal processing. If it is hit, it will be less reliable.
また、ピエゾ抵抗効果を用いた半導体圧カセ/すのダイ
ヤフラム部を直接あるいは間接的に押すという方法も考
えられる。半導体圧力士ンサを用いる方法は、感度や直
線性に優れ、かつ信号処理部も集積化可能なため、優れ
た方法であるが、ダイヤフラムの膜厚を一定に制御する
ことが困難であることから、プレイ化した場合にバラつ
きが大きくなる。一方、それを避けるために膜厚を厚く
すると感度が非常に悪くなるという欠点がある。Another possible method is to directly or indirectly push the diaphragm part of the semiconductor pressure cassette/stainer using the piezoresistance effect. The method of using a semiconductor pressure sensor is an excellent method because it has excellent sensitivity and linearity, and the signal processing section can be integrated, but it is difficult to control the film thickness of the diaphragm at a constant level. , the variation becomes larger when it is made into a play. On the other hand, if the film thickness is increased to avoid this, there is a drawback that the sensitivity becomes extremely poor.
また、半導体触覚センナを実装する場合、チ。Also, when implementing a semiconductor tactile sensor,
プと外部回路を結ぶためのボンディングワイアをうまく
引出す必要もある。触覚センナの場合、素子表面に外部
の対象物が触れるため、ボンディングワイアを切ってし
まったシするようなことも考えられる。従って、そのよ
うな事故が起きないような対策も必要である。It is also necessary to draw out the bonding wire to connect the external circuit. In the case of a tactile sensor, since an external object touches the element surface, it is possible that the bonding wire may be cut. Therefore, it is necessary to take measures to prevent such accidents from occurring.
本発明の目的は以上のような欠点を排した触覚センサを
提供することにある。An object of the present invention is to provide a tactile sensor that eliminates the above-mentioned drawbacks.
本発明の触覚センナは、半導体基板に貫通孔をあけるこ
とによ〕形成される片側支持もしくは両端支持の梁と、
該梁上でかつ梁の支持部に近い少くとも一方の部分に設
けられた拡散層抵抗と、前記梁の支持部に更に設けられ
かつ前記拡散層抵抗とでブリッジ回路もしくはハーフブ
リッジ回路を構成する拡散層抵抗と、前記梁の一部に穴
をあけ。The tactile sensor of the present invention includes a beam supported on one side or both ends formed by drilling a through hole in a semiconductor substrate;
A bridge circuit or a half-bridge circuit is constituted by a diffusion layer resistor provided on at least one portion on the beam and close to the support portion of the beam, and the diffusion layer resistor further provided on the support portion of the beam. Drill a hole in a part of the beam with a diffusion layer resistor.
そこに設置される丸い球とを含んで構成される。It is composed of a round ball that is placed there.
次に、本発明の実施例について図面を用いて説明する〇
第1図(a)〜(e)は本発明の第1の実施例の製造方
法を説明するための平面図及び断面図であって、第1図
(a)は途中工程における触覚センナの平面図、第1図
(b)はそのA−A’断面図、第1図(c)は梁形成後
の触覚センナの断面図、第1図(d)は最終工程後の触
覚センサの平面図、第1図(e)はそのB−B’断面図
である。Next, embodiments of the present invention will be explained using drawings. Figures 1 (a) to (e) are a plan view and a cross-sectional view for explaining the manufacturing method of the first embodiment of the present invention. FIG. 1(a) is a plan view of the tactile senna in an intermediate process, FIG. 1(b) is a sectional view taken along line AA', and FIG. 1(c) is a sectional view of the tactile senna after beam formation. FIG. 1(d) is a plan view of the tactile sensor after the final step, and FIG. 1(e) is a sectional view taken along line BB'.
まず、第1図(a) 、 (b)に示すように、結晶面
(110)のn型シリコン基板10にホウ素を拡散して
幅10μm1長さ100μmの拡散層抵抗11,12,
13.14を形成し、ブリッジ回路用の抵抗とする。そ
して、表面を酸化膜15で榎い、酸化膜15を選択除去
して間隔をおいた平行な二つの窓16 、16’とその
間に四角形の窓17をあける。窓16.16’は幅50
0μm、長さ15 mm 、窓17は一辺が350μm
の寸法にする。First, as shown in FIGS. 1(a) and 1(b), boron is diffused into an n-type silicon substrate 10 with a crystal plane (110), and diffusion layer resistors 11, 12 each having a width of 10 μm and a length of 100 μm are formed.
13 and 14 are formed and serve as resistors for the bridge circuit. Then, the surface is covered with an oxide film 15, and the oxide film 15 is selectively removed to form two spaced parallel windows 16 and 16' and a square window 17 between them. Window 16.16' is 50 wide
0 μm, length 15 mm, window 17 has a side of 350 μm
Dimensions.
次に、第1図(c)に示すように、酸化膜15をマスク
にしてシリコン基板10を90℃のヒドラジン液で工、
チングして底面まで突抜ける貫通孔18゜is’及び1
9をあける。Next, as shown in FIG. 1(c), using the oxide film 15 as a mask, the silicon substrate 10 is etched with a hydrazine solution at 90°C.
Through hole 18°is' and 1 that penetrates through to the bottom surface
Open 9.
本実施例においては@ (110)面方位のシリコン基
板10を異方性工、チンダ液でるるヒドラジンで工、チ
ングしているので、貫通孔18.18’。In this example, since the silicon substrate 10 with the (110) plane orientation is anisotropically etched using hydrazine and hydrazine, the through holes 18 and 18' are formed.
19のパターン精度は酸化膜15のマスク、即ち窓16
.16’、17の精度で決まシ、かつ垂直に工。The pattern accuracy of 19 is determined by the mask of oxide film 15, that is, the window 16.
.. Determined with an accuracy of 16', 17, and machined vertically.
チング除去される。これによシ両端支持の梁20が形成
される。Ching is removed. This forms a beam 20 that is supported at both ends.
次に、第1図(d) 、 (e)K示すように、アルミ
ニウム配線21を形成し、表面全保護酸化膜15′で覆
う。アルミニウム配線21は、四つの抵抗11〜14を
直列Kかつ環状に接続していて、四つの抵抗はブリッジ
回路となっている。そして−組の対角点を入力端子、他
の組の対角点を出力端子としている。Next, as shown in FIGS. 1(d) and 1(e)K, an aluminum wiring 21 is formed and the entire surface is covered with a protective oxide film 15'. The aluminum wiring 21 connects four resistors 11 to 14 in series K in a ring shape, and the four resistors form a bridge circuit. The diagonal points of the − group are used as input terminals, and the diagonal points of the other groups are used as output terminals.
次に、本発明の最も1喪な部分である丸い球を貫通孔1
9に設置する。丸い球として直径0.5 fiの?ファ
イア球22を用い、このサファイア球22を貫通孔19
に載せ、ボッティング法によシ全面をシリコンゴム23
で覆う。Next, the round ball, which is the most important part of the present invention, is inserted into the through hole 1.
Set it at 9. A round sphere with a diameter of 0.5 fi? Using the fire ball 22, insert this sapphire ball 22 into the through hole 19.
Place the silicone rubber on the entire surface using the botting method.
cover with
第2図(a) 、 (b)は第1図(a) 、 (e)
に示す触覚センサを搭載する台座の第1の例の平面図及
びc−c’断面図である。Figures 2(a) and (b) are similar to Figure 1(a) and (e).
FIG. 2 is a plan view and a sectional view taken along line cc' of a first example of a pedestal on which a tactile sensor shown in FIG.
台座25は中央に開孔26t−有し、との開孔26に第
1図(di 、 (elに示す触覚センサの貫通孔18
.18’と梁20とが位置するように台座の表面に触覚
センナが貼付けられる。The pedestal 25 has an opening 26t in the center, and the through hole 18 of the tactile sensor shown in FIGS.
.. A tactile sensor is attached to the surface of the pedestal so that 18' and beam 20 are located.
第3図は水弟1の実施例の印加荷重と電気的出力との関
係を示す特性図である。FIG. 3 is a characteristic diagram showing the relationship between the applied load and the electrical output of the embodiment of Sui-Tei 1.
横軸は梁20に印加される荷重、縦軸はブリ。The horizontal axis represents the load applied to the beam 20, and the vertical axis represents the burr.
ジの両端における出力電圧を示す。荷重と出力電圧間と
は非常に良好な線型関係にあ)%再現性も良好である。shows the output voltage across the terminal. There is a very good linear relationship between the load and the output voltage, and the % reproducibility is also good.
前述の工程と同様な工程で片持ち梁構造の触覚センナを
作製したが、第3図と同様の特性が得られた。A tactile sensor with a cantilever structure was fabricated using a process similar to that described above, and the same characteristics as shown in FIG. 3 were obtained.
第4図ra) 、 (b)は第1図(d) 、 (e)
に示す触覚センナを搭載する台座の第2の例の平面図及
びD−D’断面図でるる〇
台座40は凹部41t−有し、この凹部4工に、第1図
(dl 、 (e)に示す触覚センサの貫通孔18.1
8’及び梁20が位置するように、貼付けられる。この
台座40は、凹部41に底面があるから、梁20に許容
値以上の荷重がかかっても梁20の中央部が凹部41の
底に接触して止まるので梁の撓みは一定量以上にならず
梁の破壊を防ぐことができる。 ゛第5図は本発
明の第2の実施例の断面図である。Figure 4 (ra), (b) is similar to Figure 1 (d), (e).
The pedestal 40 has a concave portion 41t, and the concave portion 4 has a recess 41t shown in FIG. 1 (dl, (e)). Through hole 18.1 of the tactile sensor shown in
8' and the beam 20 are attached. Since this pedestal 40 has a bottom surface in the recess 41, even if a load exceeding the allowable value is applied to the beam 20, the center part of the beam 20 will come into contact with the bottom of the recess 41 and stop, so that the beam will not deflect more than a certain amount. This can prevent damage to the beams. 5 is a sectional view of a second embodiment of the present invention.
この実施例は、梁20の裏面を少し工、チングしてシリ
コン基板10の裏面51よシも梁20の裏面52の方が
少し高くなるようにする。この形状にすると平板の台座
が使用でき、また許容値以上の力が加わっても梁20が
平板の台座に接して止まるから梁20の破壊を防ぐこと
ができるという二つの効果が得られる〇
上記二つの実施例では、梁の寸法fc500μm幅、1
.5fl長とし、この梁の上に幅10μm1長さ100
μmの拡散層抵抗を作製したが、この寸法に限定されな
い。また、突起物としてサファイア球を用いたが、材料
及び形成方法についてもこれに限定されない。ま九、出
力電圧は四つの抵抗11〜14を用い、ブリッジ回路を
構成して取出すようにしたが、ブリッジ回路の半分だけ
で構成されるハーフブリッジ回路、つまシ二つの抵抗(
例えば抵抗11と12)を直列に接続し、その接続点と
接地電源とを出力端子、両端を電圧入力端子とするハー
フブリッジ回路にすることもできる。ハーフブリッジ回
路の場合も第3図に示したものと同様の相関関係を得る
ことができる。In this embodiment, the back surface of the beam 20 is slightly etched so that the back surface 52 of the beam 20 is slightly higher than the back surface 51 of the silicon substrate 10. With this shape, a flat plate pedestal can be used, and even if a force exceeding the allowable value is applied, the beam 20 will stop in contact with the flat plate pedestal, so the beam 20 can be prevented from being destroyed. In two embodiments, the beam dimensions fc 500 μm width, 1
.. The length is 5 fl, and on this beam there is a beam with a width of 10 μm and a length of 100 mm.
Although a .mu.m diffusion layer resistor was fabricated, the dimensions are not limited to this. Further, although sapphire balls are used as the protrusions, the material and forming method are not limited thereto either. Nine, the output voltage was extracted by constructing a bridge circuit using four resistors 11 to 14, but a half-bridge circuit consisting of only half of the bridge circuit, and two resistors (
For example, it is also possible to form a half-bridge circuit in which the resistors 11 and 12) are connected in series, and the connection point and the ground power source are output terminals, and both ends are voltage input terminals. Correlation similar to that shown in FIG. 3 can also be obtained in the case of a half-bridge circuit.
以上詳細に説明したように、本発明は、梁の中央部に設
けた球に集中荷重するように、かつ球が基板面よシも高
くなる構成にしたので、対象物が触れてもボンディング
線が切れる事故もなく、従来と比べて製造工程が非常に
簡略化され、しかも精度が良く、故障の少ない触覚セン
ナを得ることができるという効果をMする。As explained in detail above, the present invention is configured so that the load is concentrated on the ball provided at the center of the beam, and the ball is also raised higher than the board surface, so even if an object touches it, the bonding line There is no accident of breakage, the manufacturing process is greatly simplified compared to the conventional one, and a tactile sensor with good precision and less failure can be obtained.
第1図(a)〜(e)は本発明の第1の実施例の製造方
法を説明するための平面図及び断面図でろって、第1図
(a)は途中工程における触覚センサの平面図、第1図
(b)はそのA−A’断面図、第1図(c)は梁形成後
の触覚センナの断面図、第1図(d)は最終工程後の触
覚センナの平面図、第1図(e)はそのB−8’断面図
、第2図(a)、伽)は第1図1c) 、 (d)に示
す触覚センサを搭載する台座の第1の例の平面図及び断
面図、第3図は第1の実施例の印加荷重と電気的出力と
の関係を示す特性図、第4図(a) 、 (b)は第1
図(c) 、 (d)に示す触覚センサを搭載する台座
の第2の例の平面図及び断面図、第5図は本発明の第2
の実施例の断面図である。
10・・・・・・シリコ7基板、11,12,13.1
4・・・・・・拡散層抵抗、15・・・・・・酸化膜、
15′・・・・・・保護酸化膜、16.16’、17・
・・・・・窓、18.18’、19・・・・・・貫通孔
、21・・・・・・アルミニウム配線、22・・・・・
・サファイア球、23・・・・・・シリコンゴム、25
・・・・・・台座、26・−・・・・開孔、40・・・
・・・台座、41・・・・・・凹部、51・・・・・・
基板の裏面、52・・・・・・梁の裏面。
′T11図
筋Z図
0 /、、+ W/荷重(Kl)−
躬3図1(a) to 1(e) are a plan view and a sectional view for explaining the manufacturing method of the first embodiment of the present invention, and FIG. 1(a) is a plan view of the tactile sensor in an intermediate process. Figure 1(b) is a cross-sectional view taken along the line A-A', Figure 1(c) is a cross-sectional view of the tactile senna after forming the beam, and Figure 1(d) is a plan view of the tactile senna after the final process. , FIG. 1(e) is a cross-sectional view taken along line B-8', and FIG. 2(a) and (a) are plan views of the first example of the pedestal on which the tactile sensor shown in FIG. 1(c) and (d) is mounted. 3 is a characteristic diagram showing the relationship between the applied load and the electrical output of the first embodiment, and FIGS. 4(a) and 4(b) are the first embodiment.
A plan view and a sectional view of the second example of the pedestal on which the tactile sensor shown in FIGS. (c) and (d) are mounted, and FIG.
FIG. 10...Silico 7 substrate, 11, 12, 13.1
4... Diffusion layer resistance, 15... Oxide film,
15'...Protective oxide film, 16.16', 17.
...Window, 18.18', 19...Through hole, 21...Aluminum wiring, 22...
・Sapphire ball, 23...Silicone rubber, 25
...Pedestal, 26...Opening hole, 40...
...Pedestal, 41...Recess, 51...
Back side of the board, 52... Back side of the beam. 'T11 diagram Z diagram 0 /,, + W/load (Kl) - 謬3 diagram
Claims (1)
支持もしくは両端支持の梁と、該梁上でかつ梁の支持部
に近い少くとも一方の部分に設けられた拡散層抵抗と、
前記梁の支持部に更に設けられかつ前記拡散層抵抗とで
ブリッジ回路もしくはハーフブリッジ回路を構成する拡
散層抵抗と、前記梁の一部に穴をあけ、そこに設置され
る丸い球とを含むことを特徴とする触覚センサ。a beam supported on one side or both ends formed by drilling a through hole in a semiconductor substrate; a diffusion layer resistor provided on at least one portion of the beam close to the support portion of the beam;
A diffusion layer resistor further provided on the support portion of the beam and forming a bridge circuit or a half bridge circuit with the diffusion layer resistor, and a round ball made in a hole formed in a part of the beam and installed in the hole. A tactile sensor characterized by:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4883785A JPS61208273A (en) | 1985-03-12 | 1985-03-12 | Tactile sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4883785A JPS61208273A (en) | 1985-03-12 | 1985-03-12 | Tactile sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61208273A true JPS61208273A (en) | 1986-09-16 |
JPH0562827B2 JPH0562827B2 (en) | 1993-09-09 |
Family
ID=12814355
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4883785A Granted JPS61208273A (en) | 1985-03-12 | 1985-03-12 | Tactile sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61208273A (en) |
-
1985
- 1985-03-12 JP JP4883785A patent/JPS61208273A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0562827B2 (en) | 1993-09-09 |
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