JPS6120759Y2 - - Google Patents

Description

[Detailed Description of the Invention] The present invention relates to an improvement of a press-contact type semiconductor device.

In a conventional press-contact type semiconductor device, a disk-shaped lower electrode having almost the same thermal expansion coefficient as the semiconductor element substrate is brazed to the semiconductor element substrate through a brazing material, and an internal connection wire is press-connected to the lower electrode through an insulating plate. A structure is used in which parts are elastically pressurized and fixed using a retaining ring in a recess on the side of the heat sink.

However, in such a press-contact structure, the press-contact component and the heat sink are not electrically connected, and discharge occurs when a high voltage is applied.

Therefore, an object of the present invention is to prevent electrical discharge by electrically connecting a pressure-welded component and a heat sink and making them at the same potential.

Next, the present invention will be explained with reference to the drawings.

FIG. 1 is a sectional view of a conventional pressure contact type semiconductor device. 1 is a semiconductor element and a lower electrode 2 is connected to it through a brazing material.
It is soldered to. 3 is a surface protection film that protects the periphery of the PN junction. The connecting wire 4 and the semiconductor element 5 are elastically pressurized by press-contact parts 6 and 7 with an insulating plate 8 interposed therebetween, and are fixed in a recess on the side surface of the heat sink 10 by an annular metal body 9. In such a pressure-welding type structure, the pressure-welding parts 6 and 7 and the heat sink 10 are insulated via the insulating plate 8, and when a high voltage is applied, a discharge occurs between the pressure-welding parts 6 and 7 and the heat sink 10. Therefore, it is impossible to form a high-voltage semiconductor element into such a press-contact structure.

FIG. 2 shows an embodiment of the invention.

The difference from FIG. 1 is that a metal foil 11 as shown in FIGS. 3 and 4 is inserted between the insulating plate and the pressure welding part 7.
This means that the pressure-welded parts and the heat sink 10 are electrically connected. By doing so, the press-contact component and the heat sink are electrically connected and have the same potential, thereby preventing discharge.

As is clear from the above embodiments, according to the present invention, it is possible to prevent discharge between the press-contact parts and the heat sink when high voltage is applied, and it is possible to press-contact high-voltage elements.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional view of a conventional pressure contact type semiconductor device, FIG. 2 is a cross-sectional view of an embodiment of the present invention, and FIG.
FIG. 4 is a plan view of the metal foil in the figure, and FIG. 4 is a sectional view of FIG. 3. In the figure, 1...Semiconductor element substrate, 2...Lower electrode plate, 3...Surface protective film, 4...Internal connection line, 5...Semiconductor element, 6...Set spring, 7...
Washer, 8...Insulating plate, 9...Retaining ring, 10
...Heat sink, 11...Metal foil.

Claims (1)

[Scope of utility model registration request] A semiconductor element placed in a recess of a heat radiator is brought into pressure contact with a pressure welding part via an insulator, and an insulating plate is provided between the annular metal body inserted into the recess on the side surface of the heat radiator and the pressure welding part. A press-contact type semiconductor device, characterized in that the press-contact type semiconductor device has a metal foil between the press-contact component and the insulating plate, the outer edge of which is in contact with the inner surface of the recess of the heat sink.