JPS61206284A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS61206284A
JPS61206284A JP4601585A JP4601585A JPS61206284A JP S61206284 A JPS61206284 A JP S61206284A JP 4601585 A JP4601585 A JP 4601585A JP 4601585 A JP4601585 A JP 4601585A JP S61206284 A JPS61206284 A JP S61206284A
Authority
JP
Japan
Prior art keywords
chip
semiconductor laser
stem
cap
package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4601585A
Other languages
Japanese (ja)
Inventor
Yoshio Arima
有馬 良雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP4601585A priority Critical patent/JPS61206284A/en
Publication of JPS61206284A publication Critical patent/JPS61206284A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To transmit heat generated from a semiconductor laser chip effectively over the outside of a package by fitting the semiconductor laser chip onto a stem, hermetically sealing the laser chip by the package and confining an insulating and good thermal conductive liquid or solid or semisolid solution into the package. CONSTITUTION:A semiconductor laser diode chip 1 is set up on one surface side of a chip mount body 2 vertically mounted onto a stem 3, and connected to a terminal electrode 9 by a conductive wire 7. A photodiode 6 for monitoring beams is fitted where opposite to the chip 1, and connected to a terminal electrode 10 by a conductive wire 8. Terminal electrodes 9-11 are fixed to the stem 3, glass 5 for extracting beams is bonded so as to close an opening in a cap 4, the upper section of the stem 3 is hermetically sealed and sealed by the cap 4, and an insulating cooling liquid 21 is encapsulated into a space section on the inside of the cap 4. Accordingly, the internal heat generation of the chip 1 can be extracted to the outside through the insulating cooling liquid 21 from the whole surface, thus preventing the thermal breaking of the chip 1, then miniaturizing constitution.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は半導体レーザ装置C二関するもので、特(二半
導体レーザを使用しての光通信等の装置に使用されるも
のである。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a semiconductor laser device C2, and is particularly used in devices such as optical communication using a semiconductor laser.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

従来より半導体レーザ装置は、出力の増加による半導体
レーザダイオードチップの熱上昇防止の次め、放熱板を
設けていた。第2図は従来の半導体レーザ装置を示す断
面的構成図で、1は半導体レーザダイオードチップ、2
はチップマウント体(板)、3はステム、4はキャップ
、5は光取り出し用ガラス、6は元モニタ用ホトダイオ
ード、7.8は導電性ワイヤ、9〜11は端子型$)4
(!J−ド)である。このよう(二半導体レーザダイオ
ードチップ1の熱上昇防止のため(;、放熱板つまりス
テム3、チップマウント体2を使用しており、戎熱板構
造は牧熱効果を向上させるためC二は、大きな構造にす
ればよいが、しかし構造の制約等があり、必要以上に大
きくできない問題があった。
Conventionally, semiconductor laser devices have been provided with a heat sink to prevent heat from rising in the semiconductor laser diode chip due to increased output. FIG. 2 is a cross-sectional configuration diagram showing a conventional semiconductor laser device, in which 1 is a semiconductor laser diode chip, 2 is a semiconductor laser diode chip, and 2 is a semiconductor laser diode chip.
is a chip mount body (board), 3 is a stem, 4 is a cap, 5 is a glass for light extraction, 6 is a photodiode for the original monitor, 7.8 is a conductive wire, 9 to 11 are terminal types ($) 4
(!J-do). In this way, (2) In order to prevent the heat rise of the semiconductor laser diode chip 1 (;, the heat dissipation plate, that is, the stem 3, and the chip mount body 2 are used, and the double heating plate structure improves the heating effect, so C2 is It would be possible to make the structure larger, but there are restrictions on the structure and there is a problem in that it cannot be made larger than necessary.

〔発明の目的〕[Purpose of the invention]

本発明は上記実情(:鍾みてなされたもので、半導体レ
ーザチップから発せられt熱を、パッケージ外へ効果的
C′−伝達することができる半導体レーザ装置全提供し
ようとするものである。
The present invention has been developed in view of the above-mentioned circumstances, and it is an object of the present invention to provide a semiconductor laser device capable of effectively transmitting heat emitted from a semiconductor laser chip to the outside of the package.

〔発明の概要〕[Summary of the invention]

本発明は、半導体レーザチップ全ステム上に配設してパ
ッケージにより密封してなり、前tノ母ツケーノ内+:
 P、縁性及び良導熱性の液体または固体または半固溶
体を封じ込めたことを特徴としている。
In the present invention, a semiconductor laser chip is disposed on the whole stem and sealed with a package, and the semiconductor laser chip is disposed on the whole stem and sealed in a package.
It is characterized by containing a liquid, solid, or semi-solid solution with P, rim property and good heat conductivity.

〔発明の実施例〕[Embodiments of the invention]

以下図面全参照して本発明の一実施例を説明する。第1
図は同実施例を示すか、これは第2■のもの(二対応さ
せた場合の例であるから、対応個所f二は同一符号を用
いる。即ち半導体レーザダイオードチップ1が、ステム
3上C二垂直(二設けられたチップマウント体(板)2
の一面側に配設され、また導電性ワイヤ7により端子′
電極9に後読されている。元モニタ用ホトダイオード6
は、半導体レーザダイオードチップ1(二対向した位置
(二配設され、導電性ワイヤ8(二より端子*極10に
接続されている。端子電極9.10.11、はステム3
に固定されている。光取り出し用がラス5はキャップ4
の開口を塞ぐよう(ユmsされ、キャップ4はステム3
上を密封、封止している。キャップ4の内側のす間部分
C二は、例えば水溶性の熱伝達性に優れた絶縁冷却l夜
21が封入されている。この絶縁性冷却液21としては
、例えば市販の住友スリーエム株式会社製フッ素系不活
性液体(品名:フロリナート〕を使用する。
An embodiment of the present invention will be described below with reference to all the drawings. 1st
The figure shows the same embodiment, or since this is an example of the second (2) corresponding case, the same reference numerals are used for the corresponding locations f2. That is, the semiconductor laser diode chip 1 is connected to the C on the stem 3. 2 vertical (2 chip mount bodies (plates) 2
The conductive wire 7 connects the terminal '
The electrode 9 is read later. Original monitor photodiode 6
is a semiconductor laser diode chip 1 (two arranged in opposite positions) and connected to a conductive wire 8 (two twisted terminals *poles 10; terminal electrodes 9, 10, 11 are connected to stem 3)
is fixed. The last one for light extraction is cap 4.
The cap 4 is inserted into the stem 3 to close the opening of the stem 3.
The top is sealed and sealed. The space C2 inside the cap 4 is filled with, for example, a water-soluble insulating cooling element 21 having excellent heat transfer properties. As this insulating cooling liquid 21, for example, a commercially available fluorine-based inert liquid (product name: Fluorinert) manufactured by Sumitomo 3M Co., Ltd. is used.

上記のようC二半導体レーザ装置の内側の空間部分に、
水溶性の熱伝達性の優れた絶縁性冷却液21を封入する
ことにより、半導体レーザダイオードチッf1の内部発
熱を、該チップの全!frl(従来はチツf1のマウン
ト面からのみの成熱)から絶縁性冷却液U液21を介し
て外部(二成田することができ、半導体レーザダイオー
ドチップの熱破壊、あるいは半導体レーザダイオード9
チノグの内部発熱がらおきる長波長のモードへの波長変
化(0,25〜0.3 nm /’c、 )を抑えるこ
とができる。また従来はステム3からだけの外部熱成田
であったが、本発明では絶縁性冷却液21を介してキャ
ップ4の外面からも熱放出ができるため、半導体レーザ
装置を小形化できるものである。
As mentioned above, in the space inside the C2 semiconductor laser device,
By enclosing a water-soluble insulating coolant 21 with excellent heat transfer properties, the internal heat generation of the semiconductor laser diode chip f1 can be reduced to all parts of the chip. frl (conventionally, heat is generated only from the mounting surface of the chip f1) through the insulating coolant U liquid 21 to the outside (2 Narita), which can cause thermal breakdown of the semiconductor laser diode chip or the semiconductor laser diode 9
It is possible to suppress the wavelength change to a long wavelength mode (0.25 to 0.3 nm/'c) caused by internal heat generation of the chinogu. Further, conventionally, external heat was released only from the stem 3, but in the present invention, heat can also be released from the outer surface of the cap 4 via the insulating cooling liquid 21, so that the semiconductor laser device can be miniaturized.

なお本発明は実施例のみ(−限られず、種々の応用が可
能である。例えばキャップ内側の空間部に封入する材料
としては、絶縁性冷却液21の代りに、固体または半固
溶体としてもよい。
Note that the present invention is not limited to the embodiments, and various applications are possible. For example, the material sealed in the space inside the cap may be a solid or semi-solid solution instead of the insulating coolant 21.

〔発明の効果〕〔Effect of the invention〕

以上説明した如く本発明C二よれば、半導体レーデチッ
プから発熱された熱を、・母ツヶージ外へ効果的に5:
達できるため、半導体レーザチップの熱破壊防止、構成
の小形化などが図れる半導体レーデ装置が提供できるも
のである。
As explained above, according to the present invention C2, the heat generated from the semiconductor radar chip is effectively transferred to the outside of the motherboard.
Therefore, it is possible to provide a semiconductor radar device that can prevent thermal damage to the semiconductor laser chip and miniaturize the structure.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例の断面的!b3E凶、第2図
は従来の半導体レーザ装置の断面的構成図である。 1・・・半導体レーザダイオードチップ、2・・・チッ
プマウント体、3・・・ステム、4・・・キャップ、5
・・・光取り出し用ガラス、6・・・元モニタ用ホトダ
イオード、7.8・・・導電性ワイヤ、9ア11・・一
端子電極。 出願人代理人  弁理士 鈴 江 武 彦第1図 第2図
Figure 1 is a cross-sectional view of one embodiment of the present invention! FIG. 2 is a cross-sectional configuration diagram of a conventional semiconductor laser device. DESCRIPTION OF SYMBOLS 1... Semiconductor laser diode chip, 2... Chip mount body, 3... Stem, 4... Cap, 5
. . . Glass for light extraction, 6. Photodiode for original monitor, 7. 8. Conductive wire, 9A 11. One terminal electrode. Applicant's representative Patent attorney Takehiko Suzue Figure 1 Figure 2

Claims (1)

【特許請求の範囲】[Claims] 半導体レーザチップをステム上に配設してパッケージに
より気密封止してなり、前記パッケージ内に絶縁性及び
良導熱性の液体または固体または半固溶体を封じ込めた
ことを特徴とする半導体レーザ装置。
1. A semiconductor laser device comprising a semiconductor laser chip disposed on a stem and hermetically sealed in a package, the package containing a liquid, solid or semi-solid solution having insulating properties and good heat conductivity.
JP4601585A 1985-03-08 1985-03-08 Semiconductor laser device Pending JPS61206284A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4601585A JPS61206284A (en) 1985-03-08 1985-03-08 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4601585A JPS61206284A (en) 1985-03-08 1985-03-08 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS61206284A true JPS61206284A (en) 1986-09-12

Family

ID=12735221

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4601585A Pending JPS61206284A (en) 1985-03-08 1985-03-08 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS61206284A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991003085A1 (en) * 1989-08-21 1991-03-07 Cray Research, Inc. Improved laser diode package
US5262675A (en) * 1988-08-21 1993-11-16 Cray Research, Inc. Laser diode package
JP2004526307A (en) * 2001-01-31 2004-08-26 ジェンテクス・コーポレーション High power radiation emitter device and heat dissipation package for electronic components
US6792178B1 (en) 2000-01-12 2004-09-14 Finisar Corporation Fiber optic header with integrated power monitor
US6932522B2 (en) 1998-12-30 2005-08-23 Finisar Corporation Method and apparatus for hermetically sealing photonic devices

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5262675A (en) * 1988-08-21 1993-11-16 Cray Research, Inc. Laser diode package
WO1991003085A1 (en) * 1989-08-21 1991-03-07 Cray Research, Inc. Improved laser diode package
US6932522B2 (en) 1998-12-30 2005-08-23 Finisar Corporation Method and apparatus for hermetically sealing photonic devices
US6792178B1 (en) 2000-01-12 2004-09-14 Finisar Corporation Fiber optic header with integrated power monitor
JP2004526307A (en) * 2001-01-31 2004-08-26 ジェンテクス・コーポレーション High power radiation emitter device and heat dissipation package for electronic components

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