JPS61204946A - Manufacture of capillary chip for wire bonding - Google Patents
Manufacture of capillary chip for wire bondingInfo
- Publication number
- JPS61204946A JPS61204946A JP60046076A JP4607685A JPS61204946A JP S61204946 A JPS61204946 A JP S61204946A JP 60046076 A JP60046076 A JP 60046076A JP 4607685 A JP4607685 A JP 4607685A JP S61204946 A JPS61204946 A JP S61204946A
- Authority
- JP
- Japan
- Prior art keywords
- capillary chip
- chip
- capillary
- axis member
- wire bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
- H01L2224/78302—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野〕
この発明は、半導体部品の配線接合に用いるワイヤボン
ディング用キャピラリチップの製造方法に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION (Industrial Field of Application) The present invention relates to a method of manufacturing a capillary chip for wire bonding used for wiring bonding of semiconductor components.
従来この種のキャピラリチップの製造方法として第２図
に示すものがあった。図において、１３はキ中ピラリチ
ップロッド、１３ａは該ロッド１３の最先端部、１２は
軸穴、１２ａは先端穴である。A conventional method for manufacturing this type of capillary chip is shown in FIG. In the figure, 13 is a central pillar tip rod, 13a is the most distal end of the rod 13, 12 is a shaft hole, and 12a is a tip hole.
次に製造方法について説明する。ＡＩ！２０３などの硬
□質材料よりなるキャピラリロッドＩ３は、第２図（ａ
ｌに示すように、外周及び先端部を所定の形状となるよ
う研削機械加工される。しかる後第２図（ｂｌに示すよ
うに、キャピラリロッド１３の内部゛はマイクロドリル
等により先端近傍まで切削加工され、これにより軸穴１
２が形成される。さらにロッド１３の最先端部１３ａは
第２図（Ｃ１に示すように、レーザ光等の高密度熱源の
非接触除去加工により高精度に穴あけ成形され、これに
より先端穴１２ａが形成される。Next, the manufacturing method will be explained. AI! The capillary rod I3 made of a hard material such as 203 is shown in FIG.
As shown in FIG. 1, the outer periphery and the tip are ground and machined into a predetermined shape. Thereafter, as shown in FIG.
2 is formed. Furthermore, as shown in FIG. 2 (C1), the tip end portion 13a of the rod 13 is formed with high accuracy by non-contact removal processing using a high-density heat source such as a laser beam, thereby forming the tip hole 12a.
従来のキャピラリチップの製造方法は以」−のような段
階により構成されており、特に素材がＡＡ２０３などの
硬質材料より構成され、部品形状が直径１〜２ｒｎｍと
極めて小さいため、機械加工が困難で、かつ製品の歩留
りも低いという問題点があった。The conventional manufacturing method for capillary chips consists of the following steps. In particular, the material is made of a hard material such as AA203, and the part shape is extremely small with a diameter of 1 to 2 nm, making machining difficult. , and the yield of the product was also low.
この発明は上記のような問題点を解消するためになされ
たもので、硬質材料の機械加工工程を経ないで、安定か
つ均質、安価にキャピラリチップを製造できるワイヤボ
ンディング用キャピラリチップの製造方法を得ることを
目的とするものである。This invention was made in order to solve the above-mentioned problems, and provides a method for manufacturing capillary chips for wire bonding that can stably, homogeneously, and inexpensively manufacture capillary chips without going through the machining process of hard materials. The purpose is to obtain.
この発明に係るワイヤボンディング用キャピラリチップ
の製造方法は、化学熔解し得る軟質な材料を用いて軸部
材を形成し、この表面に硬質被膜を形成し、上記軸部材
を溶解して上記硬質被膜からなる中空形状のキャピラリ
チップを形成するようにしたものである。The method for manufacturing a capillary chip for wire bonding according to the present invention includes forming a shaft member using a soft material that can be chemically melted, forming a hard coating on the surface of the shaft member, and dissolving the shaft member to remove the hard coating from the hard coating. A hollow capillary chip is formed.
〔作用〕
この発明においては、軟質軸材料を機械加工する以外は
全て化学加工によりキャピラリチップを形成するように
したから、均質かつ安定して量産が可能になり、かつ安
価に製造される。[Function] In this invention, the capillary tip is formed by chemical processing except for machining of the soft shaft material, so that it can be mass-produced homogeneously and stably, and can be manufactured at low cost.
以下、本発明の実施例を図について説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第１図は本発明の一実施例によるワイヤボンディング用
キャピラリチップの製造方法の主要工程を示し、図にお
いて、１は軸部材、２は該軸部材１表面に形成された硬
質被膜、３はキャピラリチップの軸穴である。FIG. 1 shows the main steps of a method for manufacturing a capillary chip for wire bonding according to an embodiment of the present invention. In the figure, 1 is a shaft member, 2 is a hard coating formed on the surface of the shaft member 1, and 3 is a capillary. This is the shaft hole of the chip.
次に本実施例の製造方法について説明する。Next, the manufacturing method of this example will be explained.
まず第１１ｍ（ａ）に示すように、１０００℃以上の融
点を有する銅、パラジウム、銀等の軟質でかつ化学溶解
しうる材料をキャピラリチップの内径形状と同一に切削
研摩加工して該チップの軸穴３と同じ形状の軸部材１を
形成する。次に第１図（ｂ）に示すように、軸部材１表
面に化学蒸着により数μｍ〜数十μｍの腰厚のＴ Ｉ
Ｃ，Ｔ ｉ Ｎ、 Ｓ ｉ Ｃ等の硬質被膜２を均一
に気体雰囲気中で形成する。しがる後第１図ｆｃ）に示
すように、軸部材１を王水等の化学溶液により溶解除去
し、硬質被膜２からなる中空形状のワイヤボンディング
用キャピラリチップを形成する。First, as shown in No. 11m(a), a soft and chemically soluble material such as copper, palladium, and silver having a melting point of 1000°C or higher is cut and polished to the same shape as the inner diameter of the capillary tip. A shaft member 1 having the same shape as the shaft hole 3 is formed. Next, as shown in FIG. 1(b), T I with a thickness of several μm to several tens of μm is deposited on the surface of the shaft member 1 by chemical vapor deposition.
A hard coating 2 of C, T i N, S i C, etc. is uniformly formed in a gas atmosphere. After that, as shown in FIG. 1fc), the shaft member 1 is dissolved and removed using a chemical solution such as aqua regia to form a hollow capillary chip for wire bonding consisting of a hard coating 2.
このように本実施例の方法では、軸部材１をその表面に
化学蒸着により硬質被膜２を形成して溶解するようにし
たので、軸部材１を形成する際に行なう軟質軸材の機械
加工以外は全て化学加工で行なうことができ、これによ
りキャピラリチップを均質に安定して製造でき、製造に
おける精度が１０μｍにまで向上し、かつコストは１１
５以下にまで下がる。In this way, in the method of this embodiment, the hard coating 2 is formed on the surface of the shaft member 1 by chemical vapor deposition and then melted. All can be done by chemical processing, which allows capillary chips to be manufactured homogeneously and stably, with manufacturing precision improved to 10 μm, and at a cost of 11 μm.
It drops to below 5.
なお、上記実施例では硬質被膜を化学蒸着を用いて形成
した場合について説明したが、溶射、物理蒸着法を用い
てもよい。In the above embodiments, the hard coating was formed using chemical vapor deposition, but thermal spraying or physical vapor deposition may also be used.
また、上記実施例では軸部材の材料に銅、パラジウム、
銀を用い、硬質被膜の材料にＴｉｃ、ＴＫＮ、ＳｉＣを
用いた場合について説明したが、どちらの材料も特性が
同様であれば他の材料を用いても同様の効果を奏する。In addition, in the above embodiment, the material of the shaft member is copper, palladium,
The case where silver is used and Tic, TKN, or SiC is used as the material of the hard coating has been described, but if both materials have similar characteristics, similar effects can be obtained even if other materials are used.
以上のように、この発明に係るワイヤボンディング用キ
ャピラリチップの製造方法によれば、キャピラリチップ
を軟質軸材の機械加工の他は全て化学加工により製造す
るようにしたので、安価に精度よく微小寸法のものを得
ることができ、歩留りを向上できるという効果がある。As described above, according to the method for manufacturing a capillary chip for wire bonding according to the present invention, the capillary chip is manufactured by chemical processing except for the machining of the soft shaft material, so that it can be manufactured at low cost and with high accuracy to minute dimensions. This has the effect of improving the yield.
第１図（ａ）はこの発明の一実施例によるワイヤボンデ
ィング用キャピラリチップの製造方法において機械加工
で形成された軸部材を示す断面側面図、第１図中）はそ
の軸部材表面に硬質被膜が形成されたものを示す断面側
面図、第１図（Ｃ）はキャピラリチップの断面側面図、
第２図ｔａ＞〜（Ｃ１は各々従来方法の各加工工程にお
ける部品を示す断面側面図である。
］・・・軸部材、２・・・硬質被膜、３・・・軸穴。FIG. 1(a) is a cross-sectional side view showing a shaft member formed by machining in a method for manufacturing a capillary chip for wire bonding according to an embodiment of the present invention, and (in FIG. 1) is a hard coating on the surface of the shaft member. FIG. 1(C) is a cross-sectional side view of the capillary chip,
Fig. 2 ta> ~ (C1 is a cross-sectional side view showing the parts in each processing step of the conventional method.]... Shaft member, 2... Hard coating, 3... Shaft hole.
Claims (2)
軟質かつ化学溶解し得る材料を用いて形成し、該軸部材
表面に硬質被膜を形成し、上記軸部材を溶解して上記硬
質被膜からなる中空形状のキャピラリチップを形成する
ことを特徴とするワイヤボンディング用キャピラリチッ
プの製造方法。(1) A shaft member having the shape of the shaft hole of a capillary chip is formed using a soft and chemically soluble material, a hard coating is formed on the surface of the shaft member, and the shaft member is melted to remove the hard coating. 1. A method for manufacturing a capillary chip for wire bonding, the method comprising forming a capillary chip having a hollow shape.
る銅、パラジウム、銀を用い、上記硬質被膜はＴｉＣ、
ＴｉＮ又はＳｉＣからなり、化学蒸着により形成された
ものであることを特徴とする特許請求の範囲第１項記載
のワイヤボンディング用キャピラリチップの製造方法。(2) Copper, palladium, and silver having a melting point of 1000°C or more are used as the material of the shaft member, and the hard coating is TiC,
2. The method of manufacturing a capillary chip for wire bonding according to claim 1, wherein the capillary chip is made of TiN or SiC and is formed by chemical vapor deposition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60046076A JPS61204946A (en) | 1985-03-07 | 1985-03-07 | Manufacture of capillary chip for wire bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60046076A JPS61204946A (en) | 1985-03-07 | 1985-03-07 | Manufacture of capillary chip for wire bonding |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61204946A true JPS61204946A (en) | 1986-09-11 |
| JPH0418466B2 JPH0418466B2 (en) | 1992-03-27 |
Family
ID=12736898
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60046076A Granted JPS61204946A (en) | 1985-03-07 | 1985-03-07 | Manufacture of capillary chip for wire bonding |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61204946A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62123729A (en) * | 1985-11-22 | 1987-06-05 | Kyocera Corp | Capillary for wire bonding |
| US4861533A (en) * | 1986-11-20 | 1989-08-29 | Air Products And Chemicals, Inc. | Method of preparing silicon carbide capillaries |
-
1985
- 1985-03-07 JP JP60046076A patent/JPS61204946A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62123729A (en) * | 1985-11-22 | 1987-06-05 | Kyocera Corp | Capillary for wire bonding |
| JPH0337859B2 (en) * | 1985-11-22 | 1991-06-06 | Kyocera Corp | |
| US4861533A (en) * | 1986-11-20 | 1989-08-29 | Air Products And Chemicals, Inc. | Method of preparing silicon carbide capillaries |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0418466B2 (en) | 1992-03-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR930010221A (en) | Polycrystalline Diamond Cutting Tool and Manufacturing Method Thereof | |
| JPS61204946A (en) | Manufacture of capillary chip for wire bonding | |
| JPS63261851A (en) | Manufacture of semiconductor element | |
| JPH08152578A (en) | Manufacture of optical isolator | |
| JPS63204620A (en) | Method of forming connection between bonding wire and contact region in hybrid thick film circuit | |
| JP3209152B2 (en) | Semiconductor pressure sensor and method of manufacturing the same | |
| JPS61181136A (en) | Die bonding | |
| JP2558128B2 (en) | Method of forming metal wiring | |
| JPH0613549A (en) | Semiconductor device | |
| JPH05166880A (en) | Method for mounting circuit board or the like of chip | |
| JP2977664B2 (en) | Manufacturing method of gap coil | |
| JPH027774B2 (en) | ||
| JPH04259310A (en) | Production of superfine metal ball | |
| JPS6167984A (en) | Method of producing electronic device module | |
| JPS63110751A (en) | Formation of solder pad | |
| JPS60119790A (en) | Method of forming ultrafine pattern of hybrid ic substrate | |
| JPH04162980A (en) | Production of brazed metallic ball | |
| JPS62297245A (en) | Metallization of optical fiber | |
| JPS55146603A (en) | Fitting method for stylus chip of vibrating element | |
| JPS5914154A (en) | Electrode forming method of scanning stylus | |
| JPH0655119A (en) | Potting nozzle and potting device using same | |
| CA1278709C (en) | Method for producing a tungsten carbide tip punch | |
| JPH02248082A (en) | Manufacture of josephson junction | |
| JPS62286236A (en) | Silican semiconductor device | |
| JPH05151887A (en) | Manufacture of fine vacuum element |