JPS61203424A - Tn-fem liquid crystal display element - Google Patents

Tn-fem liquid crystal display element

Info

Publication number
JPS61203424A
JPS61203424A JP4435685A JP4435685A JPS61203424A JP S61203424 A JPS61203424 A JP S61203424A JP 4435685 A JP4435685 A JP 4435685A JP 4435685 A JP4435685 A JP 4435685A JP S61203424 A JPS61203424 A JP S61203424A
Authority
JP
Japan
Prior art keywords
liquid crystal
thickness
crystal display
substrates
display element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4435685A
Other languages
Japanese (ja)
Inventor
Toshio Fukuchi
福地 俊生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP4435685A priority Critical patent/JPS61203424A/en
Publication of JPS61203424A publication Critical patent/JPS61203424A/en
Pending legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

PURPOSE:To increase response speed by forming a TN-FEM liquid crystal display element constituted of a pair of substrates to a prescribed cell thickness and forming transparent conductive film electrodes on the substrates to 1-3mum thickness thereby decreasing the thickness of the liquid crystal layer on the electrodes. CONSTITUTION:Films consisting of an indium-tin alloy (IT) are deposited to 1.5mum thickness onto the glass substrates 1, 1' by a sputtering method using said the IT. The films on the glass substrates 1, 1' are then patterned by photoetching. The patterned films are calcined by which the indium tin oxide (ITO) electrodes 2, 2' having 1.5mum thickness are obtd. Oriented films 3, 3' are formed thereon by using polyimide and subjecting the same to an orientation treatment. The cell is formed of the substrates 1, 1' and a seal 4 and a liquid crystal 5 is sealed therein. Polarizing plates 6, 6' are adhered to the outside of the substrates 1, 1. The cell thickness 7 between the electrodes 2, 2' is thereby decreased and the rising time and falling time of the liquid crystal display element are reduced, by which the response speed is increased.

Description

【発明の詳細な説明】 (イ)発明の目的 〔産業上の利用分野〕 この発明は液晶表示素子に関し、殊にその透明導電膜電
極の構造に関する。
DETAILED DESCRIPTION OF THE INVENTION (a) Object of the Invention [Field of Industrial Application] The present invention relates to a liquid crystal display element, and particularly to the structure of its transparent conductive film electrode.

〔従来の技術〕[Conventional technology]

従来の液晶表示素子では、その透明導電膜電極が、ガラ
ス基板上にスパッタリング法文はエレクトロンビーム法
によって、厚さが150〜2000人程度でつくられて
いた。
In conventional liquid crystal display elements, transparent conductive film electrodes are formed on glass substrates by sputtering and electron beam methods to a thickness of about 150 to 2,000 layers.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

従来の液晶表示素子では、透明導電膜電極の面積抵抗が
数百〜数十Ω/sqであり、ハイ・デユーティ駆動され
ると電圧低下を生じ結果的にコントラスト低下を生じる
という問題があった。又、応答速度の短縮が求められて
いた。
In conventional liquid crystal display elements, the sheet resistance of transparent conductive film electrodes is several hundred to several tens of ohms/sq, and there is a problem in that high-duty driving causes a voltage drop, resulting in a decrease in contrast. In addition, there was a demand for a reduction in response speed.

(ロ)発明の構成 この発明の構成は、一対の基板間に構成されるセルのセ
ル厚においてこの基板上の透明導電膜電極の厚さを1〜
3μ爾として電極上のセル厚を薄くした第1図に示すセ
ル構造とし、この際、従来の150〜2000人厚の透
明導電膜電極で得られる表示部点灯・非点灯での明暗の
程度、つまりコントラスト比及び第3図中で矢印で示さ
れる液晶表示素子の光学特性での電圧−透過率曲線の立
ち上り特性急峻性、つまり下式のγ値を確保し、■2 更に高温・高湿の環境試験において異常がなく、応答速
度の立ち上り時、間及び立ち下り時間を短縮させ、ハイ
デユーティ駆動しても電圧低下が起きず、よってコント
ラスト低下の防止をはかるようにすることを特徴とした
TN−FEM液晶表示素子である。
(B) Structure of the Invention The structure of the invention is such that the thickness of the transparent conductive film electrode on this substrate is 1 to 1 in the cell thickness of a cell configured between a pair of substrates.
The cell structure shown in Fig. 1 is adopted in which the cell thickness on the electrode is reduced to 3 μm, and in this case, the degree of brightness and darkness when the display section is on and off, which can be obtained with a conventional transparent conductive film electrode with a thickness of 150 to 2000, is In other words, by ensuring the contrast ratio and the steepness of the rise characteristic of the voltage-transmittance curve in the optical characteristics of the liquid crystal display element shown by the arrow in Fig. 3, that is, the γ value of the formula below, The TN is characterized by having no abnormality in environmental tests, shortening the rise time, interval and fall time of the response speed, and causing no voltage drop even during high-duty driving, thereby preventing a decrease in contrast. -FEM liquid crystal display element.

〔実施例〕〔Example〕

以下、第1〜2図に示す実施例に基づいてこの発明を詳
述するが、これによってこの発明が限定されるものでは
ない。
The present invention will be described in detail below based on the embodiments shown in FIGS. 1 and 2, but the present invention is not limited thereby.

第1図に、本発明の液晶表示素子(100)の構造を示
す。
FIG. 1 shows the structure of a liquid crystal display element (100) of the present invention.

インジウムとスズとの合金(IT)を用いてスパッタリ
ング法によってガラス基板(11(1′)上に厚さが1
.5μmのITを主体とする膜を被着する。
An alloy of indium and tin (IT) is deposited on a glass substrate (11 (1')) to a thickness of 1 by sputtering.
.. A 5 μm IT-based film is deposited.

この時、この膜は、IT膜に近い状態の膜質となってい
る。
At this time, this film has a film quality close to that of an IT film.

フォトエツチングすることにより上記ガラス基板(11
(1”)上に設けたITを主体とする膜から必要なパタ
ーンの電極を得るようにパタニングを行なう。ここで、
このITを主体とする膜はその膜質がIT膜に近い状態
であることより、酸性水溶液に極めて容易に溶解しエツ
チングが簡便となっている。
The above glass substrate (11
(1”) Patterning is performed to obtain the required pattern of electrodes from the IT-based film provided on the top.Here,
Since this IT-based film has a film quality similar to that of an IT film, it is extremely easily dissolved in an acidic aqueous solution and can be easily etched.

パタニングされた膜を焼成し、厚さが1.5μmである
イ7ジウムチンオキサイド(TTO)のITo電極(2
)(2°)を得る。、1m(7) I To電極(2)
(2’)は、従来どおりに光透過率及び電気伝導度も十
分となっている。
The patterned film was fired, and an ITo electrode (2
) (2°) is obtained. , 1m (7) I To electrode (2)
(2') has sufficient light transmittance and electrical conductivity as before.

配向処理として例えばポリミドを用いて、基板(1)(
1′)上に配向膜(3)(3’)を形成する。
The substrate (1) (
Alignment films (3) (3') are formed on (1').

この後、上記基板(1)(1’)とシール(4)とでセ
ルを形成し、該セル内に例えばシクロヘキサン系の液晶
(5)を充填し、その後、液晶注入孔(図は省略)を閉
じる。光の干渉現象を防ぐことに対して、第2図に示さ
れるITO電極の干渉現象及びセル厚差による液晶層の
色調差を防止することに対しては、これを可視域で相殺
できる特性をもった偏光板(6)(6”)をガラス基板
111(1“)の外側に貼合せる。
After that, a cell is formed with the substrates (1) (1') and the seal (4), and a cyclohexane-based liquid crystal (5), for example, is filled in the cell, and then a liquid crystal injection hole (not shown) is filled. Close. In order to prevent the interference phenomenon of light, the interference phenomenon of the ITO electrode shown in Fig. 2, and the color tone difference of the liquid crystal layer due to the difference in cell thickness, we need to develop a property that can cancel this out in the visible range. The obtained polarizing plate (6) (6'') is attached to the outside of the glass substrate 111 (1'').

ここで、液晶表示素子(100)は完成する。Here, the liquid crystal display element (100) is completed.

この液晶表示素子(100)は上記のように製造されて
いる。よって、その透明導電膜電極つまり■To電極の
面積抵抗は1Ω/sq以下となっていて、この液晶表示
素子をハイ・デユーティ駆動で用いても電極抵抗による
コントラスト低下が生じることはない。又、ITO電極
(21(2’)が厚いことよりITO電極上のセル厚(
7)つまり液晶層の厚みは実質上薄くなっている。とこ
ろで、液晶表示素子の電気光学現象の応答速度である立
ち上り時間τr及び立ち下り時間τdは次の関係を満し
ている。
This liquid crystal display element (100) is manufactured as described above. Therefore, the sheet resistance of the transparent conductive film electrode, ie, the To electrode, is 1 Ω/sq or less, and even if this liquid crystal display element is used in high-duty driving, there is no reduction in contrast due to electrode resistance. In addition, since the ITO electrode (21 (2') is thick, the cell thickness on the ITO electrode (
7) In other words, the thickness of the liquid crystal layer is substantially thinner. Incidentally, the rise time τr and the fall time τd, which are the response speeds of the electro-optical phenomenon of the liquid crystal display element, satisfy the following relationship.

つまり、 τr CX: d ” r d oc d ” 〔ここで、τr ;立ち上り時間、τd ;立ち下り時
間、d;セル厚く液晶層の厚さ)、n;=2゜〕である
。よって、この発明の液晶表示素子では、ITO電極上
のセル厚(7)の値が小さ−くなっていて立ち上り時間
τrと立ち下り時間τdが小さくなる。つまり、その値
は各18m5ec及び29m5ecである。因に従来例
では、それらは各々34isec及び33m5ecであ
った。
That is, τr CX: d ” r d oc d ” [where τr: rise time, τd: fall time, d: cell thickness, liquid crystal layer thickness], n: = 2°]. Therefore, in the liquid crystal display element of the present invention, the value of the cell thickness (7) on the ITO electrode is small, and the rise time τr and fall time τd are small. That is, the values are 18 m5ec and 29m5ec, respectively. Incidentally, in the conventional example, they were 34 isec and 33 m5ec, respectively.

勿論、本発明の液晶表示素子は、液晶表示素子光学特性
での電圧−透過率曲線の立ち上り特性の急峻性であるγ
値、及び表示部点灯非点灯での明暗の程度の指標である
コントラスト比が従来のものと同じレベルであり、又信
頼性試験(環境試験)にも耐え、使用上さしつかえる点
はない。以上、これら特性値の一例をまとめると、次の
第1表となる。
Of course, the liquid crystal display element of the present invention has γ, which is the steepness of the rising characteristic of the voltage-transmittance curve in the optical characteristics of the liquid crystal display element.
The value and the contrast ratio, which is an index of the degree of brightness and darkness when the display is on and off, are at the same level as conventional ones, and it has also withstood reliability tests (environmental tests) and has no problems in use. An example of these characteristic values is summarized in Table 1 below.

(以下余白、次頁に続く) 第1表 (ハ)発明の効果 この発明は、ハイ・デユーティ駆動されてもコントラス
ト低下が生じることなく、加えて電気光学現象の立ち上
り時間及び立ち下り時間のより小さい液晶表示素子を提
供している。
(The following margins continue on the next page) Table 1 (c) Effects of the invention This invention does not cause a decrease in contrast even when driven at high duty, and also improves the rise time and fall time of electro-optical phenomena. We provide small liquid crystal display elements.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの発明の一実施例を示す説明図、第2図はこ
の発明に関るITO電極の光の波長と透過率との関係を
説明する図、第3図は液晶表示素子の電気光学特性での
電圧と透過率との関係を説明する図である。 (100) 一液晶表示素子、 (旧・−ガラス基板、  (2)・−・ITO電極、(
3) −配向膜、    (4)−シール、(5)一液
晶、     (6)−偏光板、(7)・−ITO上の
セル厚(液晶層の厚み)。 第1図 必 第2図 (透長(nm)] 第3図 (t /E/y)
FIG. 1 is an explanatory diagram showing an embodiment of the present invention, FIG. 2 is a diagram explaining the relationship between the wavelength of light and the transmittance of an ITO electrode according to the present invention, and FIG. FIG. 3 is a diagram illustrating the relationship between voltage and transmittance in optical characteristics. (100) One liquid crystal display element, (old glass substrate, (2) --ITO electrode, (
3) - alignment film, (4) - seal, (5) - liquid crystal, (6) - polarizing plate, (7) - cell thickness on ITO (thickness of liquid crystal layer). Figure 1 Required Figure 2 (Transparent length (nm)) Figure 3 (t/E/y)

Claims (1)

【特許請求の範囲】[Claims] 1、一対の基板で構成されるTN−FEM液晶表示素子
において、セル厚が所定の厚みでかつこの基板上の透明
導電膜電極の厚さを1〜3μmに形成してこの電極上の
液晶層厚を薄くし、それによつて種々の電気光学特性や
信頼性を確保しつつ、応答速度及びコントラスト低下に
対して改善したことを特徴とするTN−FEM液晶表示
素子。
1. In a TN-FEM liquid crystal display element composed of a pair of substrates, the cell thickness is a predetermined thickness, and the transparent conductive film electrode on this substrate is formed to have a thickness of 1 to 3 μm, and the liquid crystal layer on this electrode is formed. A TN-FEM liquid crystal display element characterized by having a reduced thickness, thereby ensuring various electro-optical characteristics and reliability, and improving response speed and contrast reduction.
JP4435685A 1985-03-06 1985-03-06 Tn-fem liquid crystal display element Pending JPS61203424A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4435685A JPS61203424A (en) 1985-03-06 1985-03-06 Tn-fem liquid crystal display element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4435685A JPS61203424A (en) 1985-03-06 1985-03-06 Tn-fem liquid crystal display element

Publications (1)

Publication Number Publication Date
JPS61203424A true JPS61203424A (en) 1986-09-09

Family

ID=12689232

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4435685A Pending JPS61203424A (en) 1985-03-06 1985-03-06 Tn-fem liquid crystal display element

Country Status (1)

Country Link
JP (1) JPS61203424A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6574175B1 (en) 1999-08-28 2003-06-03 Samsung Electronics Co., Ltd. Track jump control device for optical disc drive and method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6574175B1 (en) 1999-08-28 2003-06-03 Samsung Electronics Co., Ltd. Track jump control device for optical disc drive and method thereof

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