JPS612032A - Photodetecting signal converter of two-dimensional pressure sensitive sensor - Google Patents
Photodetecting signal converter of two-dimensional pressure sensitive sensorInfo
- Publication number
- JPS612032A JPS612032A JP12200784A JP12200784A JPS612032A JP S612032 A JPS612032 A JP S612032A JP 12200784 A JP12200784 A JP 12200784A JP 12200784 A JP12200784 A JP 12200784A JP S612032 A JPS612032 A JP S612032A
- Authority
- JP
- Japan
- Prior art keywords
- light
- light emitting
- emitting element
- signal
- photodetector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 8
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 239000011159 matrix material Substances 0.000 abstract description 5
- 230000003287 optical effect Effects 0.000 abstract 3
- 238000000605 extraction Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Force Measurement Appropriate To Specific Purposes (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
この発明は、加えられた圧力分布を精度よく検出できる
面状の二次元感圧センサの受光信号変換装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a light reception signal conversion device for a planar two-dimensional pressure-sensitive sensor that can accurately detect the distribution of applied pressure.
(従来の技術)
従来、このような分野の技術として本願出願人が特願昭
59−63158号として出願した技術があった。(Prior Art) Conventionally, as a technology in this field, there has been a technology filed as Japanese Patent Application No. 59-63158 by the applicant of the present application.
以下、その構成を説明する。The configuration will be explained below.
第2図は上記従来技術の中で紹介されている二次元感圧
センサの1例を示したもので、平面状に配列された複数
個の発光素子1からの光をそれぞれ受光素子の光透過窓
2および透明な柔軟部3を透過させて、光反射膜4から
の反射光を各発光素子に対応する受光素子5で受光し、
柔軟部の受圧面に加わる圧力Fの変化に基づく発光素子
と受光素子間の距離の変化から受光々量の変化に対応し
た圧力の変化に相当する電気信号を得るようにしたもの
である。第3図はこの二次元感圧センサ及びその処理装
置を示したもので、二次元感圧センサ部10は発光素子
群11及び受光素子群13等から構成され、多数の発光
素子1をマトリクス配設した発光素子群1ノは発光素子
駆動回路12によシ、順次パルス点灯される。また前記
各発光素子lに対応して設けられた多数の受光素子5を
マトリクス配設した受光素子群13の内点灯している発
光素子位置に対応した受光素子出力が、受光信号抽出回
路14によシ選択的に取シ出される。この受光素子出力
は増幅器15にて増幅され、サンプルホールド回路16
にてホールドされてA/l)変換器17に入力される。Figure 2 shows an example of the two-dimensional pressure-sensitive sensor introduced in the above-mentioned prior art, in which light from a plurality of light-emitting elements 1 arranged in a plane is transmitted through each light-receiving element. The light transmitted through the window 2 and the transparent flexible portion 3 is received by the light receiving element 5 corresponding to each light emitting element, and the reflected light from the light reflecting film 4 is received by the light receiving element 5 corresponding to each light emitting element.
An electric signal corresponding to a change in pressure corresponding to a change in the amount of light received is obtained from a change in the distance between the light emitting element and the light receiving element based on a change in the pressure F applied to the pressure receiving surface of the flexible part. FIG. 3 shows this two-dimensional pressure-sensitive sensor and its processing device. The two-dimensional pressure-sensitive sensor section 10 is composed of a light-emitting element group 11, a light-receiving element group 13, etc., and a large number of light-emitting elements 1 are arranged in a matrix. The provided light emitting element group 1 is sequentially pulse-lit by the light emitting element drive circuit 12. Further, the light receiving element output corresponding to the lighted light emitting element position in the light receiving element group 13 in which a large number of light receiving elements 5 provided corresponding to the light emitting elements 1 are arranged in a matrix is sent to the light receiving signal extraction circuit 14. It is selectively extracted. This light receiving element output is amplified by an amplifier 15, and a sample hold circuit 16
The signal is held at the A/l) converter 17.
該ん4変換器でディジタル化された信号は受光素子と反
射面との距離に応じた信号であるので信号処理回路18
により圧力値に変換され、圧力信号として出力される。Since the signal digitized by the four converters is a signal corresponding to the distance between the light receiving element and the reflecting surface, the signal processing circuit 18
is converted into a pressure value and output as a pressure signal.
これら一連の動作は制御回路19によシタイミング制御
されている。These series of operations are timing controlled by the control circuit 19.
ここで受光素子群13は一枚の基板上に半導体受光素子
、例えば導電型アモルファスシリコン受光素子などをマ
トリクス状に形成するのが好都合である。Here, it is convenient for the light-receiving element group 13 to form semiconductor light-receiving elements, such as conductive type amorphous silicon light-receiving elements, in a matrix on one substrate.
このアモルファスシリコン受光素子は照射光量が増せば
その抵抗が減小する性質を有しており、外部よシ一定電
圧を印加しておけばアモルファスシリコン受光素子を流
れる電流の大きさによシ照射光量ひいては二次元感圧セ
ンサに加わる圧力を知ることができるものである。This amorphous silicon photodetector has the property that its resistance decreases as the amount of irradiated light increases.If a constant voltage is applied externally, the amount of irradiated light will change depending on the magnitude of the current flowing through the amorphous silicon photodetector. Furthermore, it is possible to know the pressure applied to the two-dimensional pressure-sensitive sensor.
(発明が解決しようとする問題点)
しかしながらアモルファスシリコン等の半導体受光素子
の光感度特性は一様でなく、受光素子毎の感度バラツキ
が測定圧力のバラツキとなってあられれる欠点があった
。(Problems to be Solved by the Invention) However, the photosensitivity characteristics of semiconductor light-receiving elements such as amorphous silicon are not uniform, and there is a drawback that variations in sensitivity among the light-receiving elements can result in variations in measured pressure.
本発明は、これらの受光素子の感度のバラツキを抑え、
圧力測定誤差の少い高精度な二次元感圧センサの受光信
号変換装置を提供することにある。The present invention suppresses variations in sensitivity of these light receiving elements,
An object of the present invention is to provide a highly accurate light reception signal conversion device for a two-dimensional pressure-sensitive sensor with little pressure measurement error.
(問題点を解決するための手段)
本発明は上記問題点を解決するために、複数の光源の配
列を有する光源基板と、該光源の光を通過させると共に
該光の通過領域の周囲に夫々配列した受光素子を有する
センサ基板と、柔軟部による受圧部と、光反射膜とを積
層し、前記光源からの光が前記光反射膜で反射して受圧
部の変形に従って前記受光素子に入射する二次元感圧セ
ンサの受光信号変換装置として、所定の発光素子の点灯
前に当該発光素子に対応した所定の受光素子の暗電流出
力信号を検出する手段と、前記所定の発光素子の点灯中
に前記所定の受光素子の光電流出方信号を検出する手段
と、前記岡山力信号を信号処理して加圧力を検出する信
号処理回路とを有するようにしたものである。(Means for Solving the Problems) In order to solve the above-mentioned problems, the present invention provides a light source substrate having an array of a plurality of light sources, and a light source board that allows the light of the light sources to pass through, and a light source board that has a plurality of light sources arranged around the light passing area. A sensor substrate having arrayed light receiving elements, a pressure receiving part made of a flexible part, and a light reflecting film are laminated, and light from the light source is reflected by the light reflecting film and enters the light receiving element according to deformation of the pressure receiving part. As a light reception signal conversion device of a two-dimensional pressure sensitive sensor, there is provided a means for detecting a dark current output signal of a predetermined light receiving element corresponding to a predetermined light emitting element before the light emitting element is turned on, and a means for detecting a dark current output signal of a predetermined light receiving element corresponding to the light emitting element before the light emitting element is turned on; The apparatus includes means for detecting a photocurrent output signal of the predetermined light receiving element, and a signal processing circuit for processing the Okayama force signal and detecting the pressing force.
(作用)
本発明によれば、以上のように二次元感圧センサの受光
信号変換装置を構成することにょシ、発光素子の点灯直
前に対応する受光素子の暗電流を検出し、これを増幅器
、サンダルホールド回路、い変換器を介してディジタル
化した暗電流信号と、発光素子の点灯中での対応する受
光素子の光電流を検出し、これを増幅器、サンダルホー
ルド回路、A/D変換器を介してディジタル化した光電
流信号とを同時に信号処理回路に入力し、信号処理回路
にて受光素子毎の感度バラツキを補正して圧力信号に変
換するようにし、従って前記問題点を解決できるのであ
る。(Function) According to the present invention, in configuring the light reception signal conversion device of the two-dimensional pressure sensitive sensor as described above, the dark current of the corresponding light reception element is detected immediately before the light emitting element is turned on, and this is detected by the amplifier. , a sandal hold circuit, detects the digitized dark current signal through a converter, and the photocurrent of the corresponding light receiving element while the light emitting element is lit, and transmits it to an amplifier, a sandal hold circuit, and an A/D converter. The digitalized photocurrent signal is input to the signal processing circuit at the same time via the signal processing circuit, and the signal processing circuit corrects the sensitivity variation of each light receiving element and converts it into a pressure signal. Therefore, the above problem can be solved. be.
(実施例) 第1図に本発明の1実施例を示す。(Example) FIG. 1 shows one embodiment of the present invention.
第1図において、20は発光素子群21及び受光素子群
23等からなる二次元感圧センサ部であシ、2ノは多数
の発光素子(例えば発光ダイオード)をマトリクス状に
配設した発光素子群で、発光素子駆動回路22によシ順
次パルス点灯される。In FIG. 1, 20 is a two-dimensional pressure-sensitive sensor section consisting of a light-emitting element group 21, a light-receiving element group 23, etc., and 2 is a light-emitting element in which a large number of light-emitting elements (e.g., light-emitting diodes) are arranged in a matrix. The light emitting element driving circuit 22 sequentially pulses the light emitting elements in groups.
23は前記発光素子群の各発光素子に対応して配設され
た多数の受光素子(例えばアモルファスシリコン受光素
子)からなる受光素子群で、受光信号抽出回路24によ
シ受光素子出力を検出し且つ選択的に取り出すことがで
きる。25はアナログスイッチで受光素子出力を適当な
タイミングで暗電流増幅器26および光電流増幅器27
に分配している。増幅された暗電流はサンプルホールド
回路28にてホールドされた後、φ変換器29にてディ
ジタル化される。同様に増幅された光電流はサンプルホ
ールド回路30にてホールドされた後、φ変換器31に
てディジタル化される。ディジタル化された暗電流信号
と光電流信号は信号処理回路32に入力される。これら
一連の動作は制御回路33によシタイミング制御されて
いる。Reference numeral 23 denotes a light receiving element group consisting of a large number of light receiving elements (for example, amorphous silicon light receiving elements) arranged corresponding to each light emitting element of the light emitting element group, and the light receiving element output is detected by the light receiving signal extraction circuit 24. Moreover, it can be selectively taken out. 25 is an analog switch that connects the output of the light receiving element to the dark current amplifier 26 and the photocurrent amplifier 27 at an appropriate timing.
It is distributed to The amplified dark current is held in a sample and hold circuit 28 and then digitized in a φ converter 29. Similarly, the amplified photocurrent is held in a sample and hold circuit 30 and then digitized in a φ converter 31. The digitized dark current signal and photocurrent signal are input to the signal processing circuit 32. These series of operations are timing controlled by the control circuit 33.
なお、受光信号抽出回路24から、アナログスイッチ2
5、増幅器26 、27、サンプルホールド回路2B、
30、A/D変換器29,31、信号処理回路32’−
J、でが受光信号変換部である。Note that from the light reception signal extraction circuit 24, the analog switch 2
5, amplifiers 26, 27, sample and hold circuit 2B,
30, A/D converter 29, 31, signal processing circuit 32'-
J, is a light receiving signal converter.
ここで多数のアモルファスシリコンなどの受光素子に一
定の光を照射した場合、それぞれの受光素子から得られ
る光電流は一様とはなシにくい。When a large number of light-receiving elements such as amorphous silicon are irradiated with a certain amount of light, the photocurrent obtained from each light-receiving element is unlikely to be uniform.
しかしながら、この光電流は、光を照射しない場合の受
光素子出力(暗電流)との間に相関関係を有シている。However, this photocurrent has a correlation with the light receiving element output (dark current) when no light is irradiated.
第4図に、アモルファスシリコン受光素子の暗電流と光
電流との関係を示す測定データの一例を示す。この第4
図では、受光素子の受光光量を1mwcrn2* 0.
1mwCrn2とした場合の光電流及び暗電流との関係
を示したものである。第4図によれば、受光素子の暗電
流がわかれば光電流を検出することでその時の光照射量
を知ることができる。FIG. 4 shows an example of measurement data showing the relationship between dark current and photocurrent of an amorphous silicon light receiving element. This fourth
In the figure, the amount of light received by the light receiving element is 1mwcrn2*0.
It shows the relationship between the photocurrent and the dark current when it is 1 mwCrn2. According to FIG. 4, if the dark current of the light receiving element is known, the amount of light irradiation at that time can be determined by detecting the photocurrent.
第5図(、) 、 (b)は1組の発光・受光素子の動
作時間、第5図(c) 、 (d)はアナログスイッチ
25の動作時間を示すタイムチャートである。第5図(
a)はある1つの発光素子の点灯時間を示し、第5図(
b)は対応する受光素子の駆動時間を示している。ここ
で発光素子の点灯開始時期は対応する受光素子の駆動開
始時期よシ遅れておシ、受光素子はタイミング(イ)で
は暗電流を出力し、タイミング0)では光電流を出力す
る。5(a) and 5(b) are time charts showing the operating time of one set of light emitting/light receiving elements, and FIGS. 5(c) and 5(d) are time charts showing the operating time of the analog switch 25. Figure 5 (
a) shows the lighting time of one light emitting element, and FIG.
b) shows the driving time of the corresponding light receiving element. Here, the lighting start time of the light emitting element is delayed from the driving start time of the corresponding light receiving element, and the light receiving element outputs a dark current at timing (A) and a photocurrent at timing 0).
アナログスイッチ25は第5図(C)に示すONのタイ
ミングでは接点A側(第1図)に、第5図(d)に示す
ONのタイミングでは接点B側(第1図)に接続される
。こうして受光素子の暗電流出力は暗電流増幅器26に
伝達され、光電流出力は光電流増幅器27に伝達される
。増幅された暗電流は第5図(c)に示すONのタイミ
ング中の適当な時点にサンプルホールド回路28でホー
ルドされ、また増幅された光電流は第5図(d)に示す
ONのタイミング中の適当な時点にサンプルホールド回
路30でホールドされる。ホールドされた暗電流信号お
よび光電流信号は同時にφ変換器29.31にてディノ
タル信号化され、信号処理回路32に伝達される。信号
処理回路32には暗電流信号と光電流信号から光照射量
を求めるテーブル、および光照射量→センサ受圧面の変
形量→加圧力と変換するテーブルを用意しておけば、圧
力値を出力することができる。The analog switch 25 is connected to the contact A side (FIG. 1) at the ON timing shown in FIG. 5(C), and to the contact B side (FIG. 1) at the ON timing shown in FIG. 5(d). . In this way, the dark current output of the light receiving element is transmitted to the dark current amplifier 26, and the photocurrent output is transmitted to the photocurrent amplifier 27. The amplified dark current is held in the sample and hold circuit 28 at an appropriate point during the ON timing shown in FIG. 5(c), and the amplified photocurrent is held at an appropriate point during the ON timing shown in FIG. 5(d). The sample and hold circuit 30 holds the sample at an appropriate point in time. The held dark current signal and photocurrent signal are simultaneously converted into dinotal signals by the φ converters 29 and 31, and transmitted to the signal processing circuit 32. If the signal processing circuit 32 is prepared with a table for calculating the light irradiation amount from the dark current signal and the photocurrent signal, and a table for converting the light irradiation amount → deformation amount of the sensor pressure receiving surface → pressurizing force, the pressure value can be output. can do.
以上が1組の受発光素子に対する動作であシ、同様に全
ての受発光素子が順次駆動されることによって受圧面の
全面における圧力分布に応じた圧力信号が得られる。The above is the operation for one set of light receiving and emitting elements, and similarly, by sequentially driving all the light receiving and emitting elements, a pressure signal corresponding to the pressure distribution over the entire surface of the pressure receiving surface is obtained.
(発明の効果)
本発明は、以上説明したように発光素子の点灯前に受光
素子の暗電流を検出する回路と発光素子の点灯中に受光
素子の光電流を検出する回路とを設け、これら両信号か
ら受光素子感度のバラツキを補正した光照射量を求める
ようにしたもので、測定誤差の小さい高精度の圧力検出
を可能とし、受圧面の変形量を光を用いて検出する二次
元感圧センサの受光信号変換装置に利用することができ
る。(Effects of the Invention) As explained above, the present invention includes a circuit that detects the dark current of the light receiving element before the light emitting element is lit, and a circuit that detects the photocurrent of the light receiving element while the light emitting element is lit. The light irradiation amount is determined from both signals by correcting variations in the sensitivity of the light receiving element, enabling highly accurate pressure detection with small measurement errors, and a two-dimensional sensing method that uses light to detect the amount of deformation of the pressure receiving surface. It can be used in a light reception signal conversion device for a pressure sensor.
第1図は本発明の1実施例を示したブロック図、第2図
は二次元感圧センサの構成を示す断面図、第3図は従来
の二次元感圧センサとその処理装置を示した図、第4図
は受光素子の暗電流と光電流の関係を示した図、第5図
は動作タイミングを説明するタイムチャートである。
2θ・・・二次元感圧センサ、21・・・発光素子群、
22・・・発光素子駆動回路、23・・・受光素子群、
24・・・受光信号抽出回路、25・・・アナログスイ
ッチ、26・・・暗電流増幅器、27・・・光電流増幅
器、28・・・サンプルホールド回路、29・・・め変
換器、30・・・サンダルホールド回路、31・・・A
/])変換器、32・・・信号処理回路、33・・・制
御回路。
特許出願人 沖電気工業株式会社
代 理 人 鈴 木 敏 明3第3図
第5図
一時旧
第4図
8台1 胤[xlσ8A〕
手続補正書(自発)
昭和 撃0°2月13日Fig. 1 is a block diagram showing one embodiment of the present invention, Fig. 2 is a sectional view showing the configuration of a two-dimensional pressure-sensitive sensor, and Fig. 3 is a conventional two-dimensional pressure-sensitive sensor and its processing device. 4 is a diagram showing the relationship between the dark current and photocurrent of the light receiving element, and FIG. 5 is a time chart explaining the operation timing. 2θ... Two-dimensional pressure sensitive sensor, 21... Light emitting element group,
22... Light emitting element drive circuit, 23... Light receiving element group,
24... Light reception signal extraction circuit, 25... Analog switch, 26... Dark current amplifier, 27... Photocurrent amplifier, 28... Sample hold circuit, 29... Female converter, 30... ... Sandal hold circuit, 31...A
/]) converter, 32... signal processing circuit, 33... control circuit. Patent Applicant Oki Electric Industry Co., Ltd. Agent Toshiaki Suzuki 3 Figure 3 Figure 5 Temporary Figure 4 Figure 4 8 unit 1 Tan [xlσ8A] Procedural amendment (voluntary) Showa 0° February 13
Claims (1)
過させると共に該光の通過領域の周囲に夫々配列した受
光素子を有するセンサ基板と、柔軟部による受圧部と、
光反射膜とを積層し、前記光源からの光が前記光反射膜
で反射して受圧部の変形に従って前記受光素子に入射す
る二次元感圧センサの受光信号変換装置であって、 所定の発光素子の点灯前に当該発光素子に対応した所定
の受光素子の暗電流出力信号を検出する手段と、前記所
定の発光素子の点灯中に前記所定の受光素子の光電流出
力信号を検出する手段と、前記両出力信号を信号処理し
て加圧力を検出する信号処理回路とを有することを特徴
とする二次元感圧センサの受光信号変換装置。[Scope of Claims] A light source board having an array of a plurality of light sources, a sensor board that allows light from the light sources to pass through and has light receiving elements arranged around the light passing area, and a pressure receiving part made of a flexible part. ,
A light-receiving signal conversion device for a two-dimensional pressure-sensitive sensor, in which light from the light source is reflected by the light-reflecting film and enters the light-receiving element according to deformation of the pressure-receiving part, the light-receiving signal converting device comprising: a light-reflecting film; means for detecting a dark current output signal of a predetermined light-receiving element corresponding to the light-emitting element before lighting the element; and means for detecting a photocurrent output signal of the predetermined light-receiving element while the predetermined light-emitting element is turned on. and a signal processing circuit that processes both of the output signals and detects the applied force.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12200784A JPS612032A (en) | 1984-06-15 | 1984-06-15 | Photodetecting signal converter of two-dimensional pressure sensitive sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12200784A JPS612032A (en) | 1984-06-15 | 1984-06-15 | Photodetecting signal converter of two-dimensional pressure sensitive sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS612032A true JPS612032A (en) | 1986-01-08 |
Family
ID=14825254
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12200784A Pending JPS612032A (en) | 1984-06-15 | 1984-06-15 | Photodetecting signal converter of two-dimensional pressure sensitive sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS612032A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013021799A1 (en) * | 2011-08-05 | 2013-02-14 | 独立行政法人科学技術振興機構 | Sensor module and sensor system for soft object |
-
1984
- 1984-06-15 JP JP12200784A patent/JPS612032A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013021799A1 (en) * | 2011-08-05 | 2013-02-14 | 独立行政法人科学技術振興機構 | Sensor module and sensor system for soft object |
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