JPS61199058U - - Google Patents

Info

Publication number
JPS61199058U
JPS61199058U JP8282685U JP8282685U JPS61199058U JP S61199058 U JPS61199058 U JP S61199058U JP 8282685 U JP8282685 U JP 8282685U JP 8282685 U JP8282685 U JP 8282685U JP S61199058 U JPS61199058 U JP S61199058U
Authority
JP
Japan
Prior art keywords
electrostatic induction
gate
induction thyristor
semiconductor device
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8282685U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8282685U priority Critical patent/JPS61199058U/ja
Publication of JPS61199058U publication Critical patent/JPS61199058U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)
  • Emergency Protection Circuit Devices (AREA)
JP8282685U 1985-05-31 1985-05-31 Pending JPS61199058U (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8282685U JPS61199058U (de) 1985-05-31 1985-05-31

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8282685U JPS61199058U (de) 1985-05-31 1985-05-31

Publications (1)

Publication Number Publication Date
JPS61199058U true JPS61199058U (de) 1986-12-12

Family

ID=30630892

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8282685U Pending JPS61199058U (de) 1985-05-31 1985-05-31

Country Status (1)

Country Link
JP (1) JPS61199058U (de)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0032068A1 (de) * 1979-12-07 1981-07-15 Le Silicium Semiconducteur Ssc Dreipolige Diode sowie ihre Montage mit einem hauptsächlichen Halbleiterbauelement in einem einzigen Gehäuse

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0032068A1 (de) * 1979-12-07 1981-07-15 Le Silicium Semiconducteur Ssc Dreipolige Diode sowie ihre Montage mit einem hauptsächlichen Halbleiterbauelement in einem einzigen Gehäuse

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