JPS6118835B2 - - Google Patents

Info

Publication number
JPS6118835B2
JPS6118835B2 JP55046763A JP4676380A JPS6118835B2 JP S6118835 B2 JPS6118835 B2 JP S6118835B2 JP 55046763 A JP55046763 A JP 55046763A JP 4676380 A JP4676380 A JP 4676380A JP S6118835 B2 JPS6118835 B2 JP S6118835B2
Authority
JP
Japan
Prior art keywords
information
memory cell
write
transistor
read
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55046763A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56143594A (en
Inventor
Yasunobu Inabe
Toshio Hayashi
Kunyasu Kawarada
Masao Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP4676380A priority Critical patent/JPS56143594A/ja
Publication of JPS56143594A publication Critical patent/JPS56143594A/ja
Publication of JPS6118835B2 publication Critical patent/JPS6118835B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/416Read-write [R-W] circuits 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP4676380A 1980-04-11 1980-04-11 Semiconductor storage circuit Granted JPS56143594A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4676380A JPS56143594A (en) 1980-04-11 1980-04-11 Semiconductor storage circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4676380A JPS56143594A (en) 1980-04-11 1980-04-11 Semiconductor storage circuit

Publications (2)

Publication Number Publication Date
JPS56143594A JPS56143594A (en) 1981-11-09
JPS6118835B2 true JPS6118835B2 (it) 1986-05-14

Family

ID=12756367

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4676380A Granted JPS56143594A (en) 1980-04-11 1980-04-11 Semiconductor storage circuit

Country Status (1)

Country Link
JP (1) JPS56143594A (it)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015216579A1 (de) 2015-08-31 2017-03-02 Ziehl-Abegg Se Lüfterrad, Lüfter und System mit mindestens einem Lüfter

Also Published As

Publication number Publication date
JPS56143594A (en) 1981-11-09

Similar Documents

Publication Publication Date Title
US3284782A (en) Memory storage system
US4078261A (en) Sense/write circuits for bipolar random access memory
US3697962A (en) Two device monolithic bipolar memory array
EP0023792B1 (en) Semiconductor memory device including integrated injection logic memory cells
US4027176A (en) Sense circuit for memory storage system
US4459686A (en) Semiconductor device
US4663741A (en) Strobed access semiconductor memory system
US5016214A (en) Memory cell with separate read and write paths and clamping transistors
GB1292355A (en) Digital data storage circuits using transistors
US3231763A (en) Bistable memory element
EP0181819B1 (en) Memory cell power scavenging apparatus and method
US4456979A (en) Static semiconductor memory device
EP0023408B1 (en) Semiconductor memory device including integrated injection logic memory cells
US4313179A (en) Integrated semiconductor memory and method of operating same
JPS6118835B2 (it)
US4922411A (en) Memory cell circuit with supplemental current
US3573756A (en) Associative memory circuitry
US4964081A (en) Read-while-write ram cell
USRE28905E (en) Field effect transistor memory cell
US3540007A (en) Field effect transistor memory cell
US5251173A (en) High-speed, low DC power, PNP-loaded word line decorder/driver circuit
US4853898A (en) Bipolar ram having state dependent write current
KR940003835B1 (ko) 반도체 메모리장치
US4899311A (en) Clamping sense amplifier for bipolar ram
JPH0152834B2 (it)