JPS6118835B2 - - Google Patents
Info
- Publication number
- JPS6118835B2 JPS6118835B2 JP55046763A JP4676380A JPS6118835B2 JP S6118835 B2 JPS6118835 B2 JP S6118835B2 JP 55046763 A JP55046763 A JP 55046763A JP 4676380 A JP4676380 A JP 4676380A JP S6118835 B2 JPS6118835 B2 JP S6118835B2
- Authority
- JP
- Japan
- Prior art keywords
- information
- memory cell
- write
- transistor
- read
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 11
- 210000004027 cell Anatomy 0.000 description 15
- 239000000969 carrier Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 210000000352 storage cell Anatomy 0.000 description 3
- 230000007423 decrease Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
- G11C11/416—Read-write [R-W] circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4676380A JPS56143594A (en) | 1980-04-11 | 1980-04-11 | Semiconductor storage circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4676380A JPS56143594A (en) | 1980-04-11 | 1980-04-11 | Semiconductor storage circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56143594A JPS56143594A (en) | 1981-11-09 |
JPS6118835B2 true JPS6118835B2 (it) | 1986-05-14 |
Family
ID=12756367
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4676380A Granted JPS56143594A (en) | 1980-04-11 | 1980-04-11 | Semiconductor storage circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56143594A (it) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102015216579A1 (de) | 2015-08-31 | 2017-03-02 | Ziehl-Abegg Se | Lüfterrad, Lüfter und System mit mindestens einem Lüfter |
-
1980
- 1980-04-11 JP JP4676380A patent/JPS56143594A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS56143594A (en) | 1981-11-09 |
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