JPS61187358A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS61187358A JPS61187358A JP2767085A JP2767085A JPS61187358A JP S61187358 A JPS61187358 A JP S61187358A JP 2767085 A JP2767085 A JP 2767085A JP 2767085 A JP2767085 A JP 2767085A JP S61187358 A JPS61187358 A JP S61187358A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- film
- capacitive elements
- si3n4
- covered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置における電気容量体の構造に関する
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the structure of a capacitor in a semiconductor device.
従来、半導体装置における電気容量体は、第1図に示す
ごとき構造となっているのが通例であった。Conventionally, a capacitor in a semiconductor device has generally had a structure as shown in FIG.
すなわち、シリコン基板1の表面に、フィールド酸化膜
2.拡散層5.ゲート酸化膜4.電極膜6が形成され、
前記拡散層3と電極膜5の電極線6.7間の電気容量を
用いるのが通例であった。That is, a field oxide film 2. is formed on the surface of a silicon substrate 1. Diffusion layer 5. Gate oxide film 4. An electrode film 6 is formed,
It has been customary to use the capacitance between the diffusion layer 3 and the electrode wire 6.7 of the electrode film 5.
しかし、前記従来技術によると、ゲート酸化膜が薄く絶
縁耐圧が低いこと、および電気容量体が占める面積が大
きく高集積化に向かない等の問題点があった。However, the conventional technology has problems such as the gate oxide film being thin and having a low dielectric breakdown voltage, and the area occupied by the capacitor being large, making it unsuitable for high integration.
本発明は、かかる従来技術の問題点を解決するために、
半導体装置における積み重ね電極構造による電気容量体
において、その誘電体膜に少くともシリコン窒化膜が用
いられて成ることを特徴とする。In order to solve the problems of the prior art, the present invention has the following features:
A capacitor having a stacked electrode structure in a semiconductor device is characterized in that at least a silicon nitride film is used as a dielectric film.
以下、実施例により本発明を詳述する。 Hereinafter, the present invention will be explained in detail with reference to Examples.
第2図は本発明の一実施例を示す半導体装置における電
気容量体部の断面図である。すなわち、シリコン基板1
1の表面にはフィールド酸化膜12、第1の電極膜15
.第1のシリコン窒化膜14、第2の電極膜16.第2
のシリコン窒化膜15および第3の電極膜17が形成さ
れ、前記第2の電極膜16からの電極線18と第1の電
極膜13と第3の電極膜17からの電極IIi!20.
19との間の電気容量を電気容量体として用いることと
なる。FIG. 2 is a sectional view of a capacitor portion in a semiconductor device showing an embodiment of the present invention. That is, silicon substrate 1
1 has a field oxide film 12 and a first electrode film 15 on its surface.
.. First silicon nitride film 14, second electrode film 16. Second
A silicon nitride film 15 and a third electrode film 17 are formed, and an electrode line 18 from the second electrode film 16 and an electrode IIi! from the first electrode film 13 and the third electrode film 17 are formed. 20.
19 will be used as a capacitor.
尚、第1と第2のシリコン窒化膜14と15に関しては
必ずしもシリコン窒化膜単層である必要はなく、例えば
シリコン酸化膜とシリコン窒化膜との多層構造、タンタ
ル酸化膜とシリコン窒化膜との多層構造等の組み合わせ
等に本発、明が適用されることは云うまでもない。Note that the first and second silicon nitride films 14 and 15 do not necessarily have to be a single layer of silicon nitride, but may have, for example, a multilayer structure of a silicon oxide film and a silicon nitride film, or a tantalum oxide film and a silicon nitride film. It goes without saying that the present invention is applicable to combinations of multilayer structures and the like.
本発明の如く、半導体装置における積み重ね電極構造に
よる電気容量体において、その誘電体膜に少くともシリ
コン窒化膜を用いることにより、シリコン窒化膜の誘電
率がシリコン酸化膜より3倍も高いので、その分誘電体
膜厚が厚くでき、絶縁耐圧か高くとれること、および電
気容量体が占める面積を小さくでき、高集積化できる効
果がある。By using at least a silicon nitride film as the dielectric film in a capacitor having a stacked electrode structure in a semiconductor device as in the present invention, the dielectric constant of the silicon nitride film is three times higher than that of a silicon oxide film. The dielectric film thickness can be increased, the dielectric strength can be increased, and the area occupied by the capacitor can be reduced, resulting in higher integration.
第1図は従来技術による半導体装置における電気容量体
の断面図、第2図は本発明の一実施例を示す半導体装置
における電気容量体部の断面図である。
1.11・・・・・・シリコン基板
2.12・・・・・・フィールド酸化膜4・・・・・・
ゲート酸化膜
3・・・・・・拡散層
14.15・・・・・・シリコン窒化膜5.13,16
.17・・・・・・電極膜6.7.1B、19.20・
・・・・・電極線具 上・FIG. 1 is a sectional view of a capacitor in a semiconductor device according to the prior art, and FIG. 2 is a sectional view of a capacitor in a semiconductor device according to an embodiment of the present invention. 1.11...Silicon substrate 2.12...Field oxide film 4...
Gate oxide film 3...Diffusion layer 14.15...Silicon nitride film 5.13, 16
.. 17... Electrode film 6.7.1B, 19.20.
・・・・・・Electrode wire top・
Claims (1)
体において、その誘電体膜に少くともシリコン窒化膜が
用いられて成ることを特徴とする半導体装置。1. A semiconductor device characterized in that, in a capacitor having a stacked electrode structure in a semiconductor device, at least a silicon nitride film is used as a dielectric film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2767085A JPS61187358A (en) | 1985-02-15 | 1985-02-15 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2767085A JPS61187358A (en) | 1985-02-15 | 1985-02-15 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61187358A true JPS61187358A (en) | 1986-08-21 |
Family
ID=12227382
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2767085A Pending JPS61187358A (en) | 1985-02-15 | 1985-02-15 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61187358A (en) |
-
1985
- 1985-02-15 JP JP2767085A patent/JPS61187358A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5420449A (en) | Capacitor for a semiconductor device | |
JPH02246261A (en) | Capacitor structure and monolithic voltage maltiplier | |
KR970003926A (en) | Semiconductor integrated circuit device and manufacturing method thereof | |
JPH0577340B2 (en) | ||
JPS61187358A (en) | Semiconductor device | |
JPH0328828B2 (en) | ||
GB2294586A (en) | Capacitor for semiconductor device | |
JPH05226582A (en) | Compound semiconductor device | |
JPS61187357A (en) | Semiconductor device | |
JPS62104067A (en) | Semiconductor device | |
JPH05190767A (en) | Semiconductor device | |
JPH0247862A (en) | Semiconductor integrated circuit device | |
JPS6351375B2 (en) | ||
JPH0575021A (en) | Semiconductor device | |
JPS58213461A (en) | Semiconductor device | |
JPH0536900A (en) | Mis semiconductor capacitive element | |
JPH03257856A (en) | Semiconductor device | |
JPH03278580A (en) | Thin film transistor memory | |
JPH03270163A (en) | Thin-film transistor array | |
JPH0223646A (en) | Semiconductor device | |
JP2682236B2 (en) | Semiconductor integrated circuit device | |
JPH065806A (en) | Semiconductor device | |
JPH02226755A (en) | Semiconductor device | |
JPS62188353A (en) | Semiconductor device | |
JPS61248458A (en) | Semiconductor integrated circuit device |