JPS61183195A - Vessel for liquid starting material - Google Patents

Abstract

PURPOSE:To prevent a liq. starting material in a vessel from flowing into a gas introducing inlet by dividing the vessel into two chambers with a partition wall having a communicating hole at the lower part, fitting the gas introducing inlet and a gas releasing outlet to the separate chambers, and feeding a gas into the liq. starting material. CONSTITUTION:A carrier gas is fed into the liq. starting material such as trimethyl gallium or other organometallic compound to bubble the starting material, and the vaporized starting material is sent to a stage for growing a semiconductor in a vapor phase. At this time, the body 1 of the vessel contg. the liq. starting material (f) is divided into two chambers 2, 3 with a partition wall 1a having a hole 6 for introducing a bubbling gas at the lower part. The chambers 2, 3 communicate with each other by the hole 6. The gas introducing inlet 4 and a gas releasing outlet 5 are separately fitted to the upper parts of the chambers 2, 3. Even when a carrier gas pipe is connected to the gas releasing outlet 5 by mistake, the liq. starting material (f) is prevented from surging back into the gas introducing inlet 4.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a vapor phase growth apparatus, and more particularly to a liquid raw material container for a vapor phase growth apparatus used for manufacturing semiconductor devices.

[Conventional technology]

Thin film growth is one of the extremely important steps in producing semiconductor devices with fine structures such as highly integrated circuits, semiconductor radars, and photodetectors. However, the vapor phase growth method, liquid phase growth method, and molecular beam epitaxial method are used as thin film growth methods. However, the molecular beam epitaxial method and the vapor phase growth method are methods for growing thin films from a source gas or raw material molecules to a crystal substrate. It has the advantage of direct growth and is the best in terms of mass production.

In conventional vapor phase growth methods, the target gas is supplied to the reaction tube together with a transport gas, either through a gas tank or, in the case of a liquid source, through a bubbler. The crystal substrate is heated in a reaction tube by resistance heating, high frequency heating, etc., and the supplied raw material gas causes a chemical reaction on or near the crystal substrate, resulting in epitaxial growth on the crystal substrate.

When using a liquid raw material, a transport gas is pumped into a container containing the liquid raw material, and the raw material is vaporized and the transport gas is sent to the reaction section. At this time, the temperature of the container is kept constant to keep the concentration of the raw material constant, and the gas pumped into the liquid raw material is pumped to bring the vapor pressure of the raw material to the saturated vapor pressure. The ceremony can be held.

In such a method, in the conventional method, for example, trimethyl is
When organic metals such as um) are used, it is necessary to maintain the raw materials at a high purity, and since they burn explosively in the air, containers are usually made of stainless steel. Therefore, the condition inside the container cannot be seen from the outside. In order to bubble the gas, a stainless steel pipe is usually installed at the bottom of the container from the gas inlet. The sent gas enters the container through the gas inlet, reaches the bottom of the container through the pipe, and is pumped into the liquid raw material.

[Problem that the invention seeks to solve]

However, in such a structure, if the gas inlet and gas outlet are mistakenly installed in the opposite direction, the liquid raw material will be directly discharged out of the container. Even if the gas inlet and gas outlet are connected correctly, if the pressure at the gas inlet becomes lower than the pressure at the gas outlet due to incorrect gas operation, the liquid material will flow backwards. There is a drawback. Particularly, organometallic raw materials such as trimethyl lithium burn very violently in the atmosphere, so if the organometallic container is removed while the raw materials are flowing backwards, there is a risk that the raw materials will burn.

An object of the present invention is to provide a liquid raw material container that can eliminate the above-mentioned risks.

[Means for solving problems]

The present invention provides a liquid raw material container for supplying a transport gas into a liquid raw material, making the gas bubble, and delivering the vaporized raw material to a process such as semiconductor vapor phase growth, in which the inside of the container is divided into at least two chambers, and the container is divided into at least two chambers. This is a liquid raw material container characterized in that some of the chambers are connected at the lower part and at least one of a gas inlet or a gas outlet is provided in the upper part of each chamber.

〔Example〕

Embodiments of the present invention will be described in detail below, taking as an example a container for a liquid raw material containing an organic metal such as trimethyl gallium.

FIG. 1 is a sectional view of a container for organic metal liquid raw material, which is an embodiment of the present invention. The container body 1 is divided into a liquid raw material container chamber 2.3 by a partition wall 1aK, and the compartments 2.3 are communicated with each other by a bubble gas inlet 6 opened at the lower part of the partition wall 1&, and a gas inlet port is provided at the upper part of the storage chamber 2. 4. Gas discharge ports 5 are connected to the upper part of the storage chamber 3, respectively. The liquid raw material f is stored in the liquid raw material storage chambers 2 and 3. A transport gas, such as hydrogen, is supplied through the gas inlet 4) and presses down the liquid level of the raw material in the liquid raw material storage chamber 2. When the liquid level reaches the bubble gas inlet 6 that connects the two raw material storage chambers 2 and 3, the gas is contained while bubbling as it is discharged from the liquid raw material storage chamber 2 into the storage chamber 3. Reaching the liquid level in chamber 3,
The gas is released from the gas discharge port 5 and sent to the process. At this time, since the liquid level in the liquid raw material storage chamber 3 rises, the liquid raw material 1 should be prepared in advance so that it does not reach the gas discharge port 5.
Adjust the amount. The partitioned chamber 2.3 of the container of the present invention may be basically symmetrical, and the inverted K gas discharge port 5 may be used as a gas introduction port without any problem. Furthermore, gas inlet 4
When the pressure applied to the liquid raw material storage chamber 2 on the side becomes lower than the pressure in the storage chamber 3, the liquid level in the storage chamber 3 is pushed down, but when the liquid level reaches the bubble gas inlet 6. When the gas enters the liquid raw material storage chamber 2, the vacuum is broken and the liquid raw material %lf does not flow back through the gas inlet 4.

〔Effect of the invention〕

As is clear from the above description, the liquid raw material container of the present invention prevents the liquid raw material from flowing back into the gas inlet port, thereby preventing accidents caused by incorrect installation of the liquid raw material container or malfunction of the gas system. Accidents caused by backflow of liquid can be prevented, accidents caused by flammable raw materials can be prevented, and handling can be performed more easily than conventional liquid raw material containers.

The examples are not intended to limit the invention. In other words, in this example, a container with two storage chambers provided symmetrically was illustrated, but even if the container is asymmetrical or the two chambers are independent, it is possible to prevent backflow of the liquid raw material in the same way. .

[Brief explanation of the drawing]

FIG. 1 is a sectional view showing one embodiment of the present invention. 1... Container body, 2, 3... Liquid raw material storage chamber, 4.
...Gas inlet, 5...Gas discharge port, 6...Bubble gas inlet.

Claims (1)

[Claims] (1) In a liquid raw material container that supplies a transport gas into a liquid raw material, bubbles the gas, and sends the vaporized raw material to a process such as semiconductor vapor phase growth, the inside of the container is divided into at least two chambers, and the container is divided into at least two chambers, A liquid raw material container characterized in that a portion of the chambers are communicated at the lower part, and at least one of a gas inlet or a gas outlet is provided in the upper part of each chamber.