JPS61176135A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS61176135A JPS61176135A JP60016935A JP1693585A JPS61176135A JP S61176135 A JPS61176135 A JP S61176135A JP 60016935 A JP60016935 A JP 60016935A JP 1693585 A JP1693585 A JP 1693585A JP S61176135 A JPS61176135 A JP S61176135A
- Authority
- JP
- Japan
- Prior art keywords
- fuse
- well
- region
- floating
- melting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
Landscapes
- Design And Manufacture Of Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60016935A JPS61176135A (ja) | 1985-01-31 | 1985-01-31 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60016935A JPS61176135A (ja) | 1985-01-31 | 1985-01-31 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61176135A true JPS61176135A (ja) | 1986-08-07 |
JPH0573058B2 JPH0573058B2 (enrdf_load_stackoverflow) | 1993-10-13 |
Family
ID=11929978
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60016935A Granted JPS61176135A (ja) | 1985-01-31 | 1985-01-31 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61176135A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997001188A1 (de) * | 1995-06-23 | 1997-01-09 | Siemens Aktiengesellschaft | Halbleiteranordnung mit einem fuse-link und darunter angeordneter wanne |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014154674A (ja) | 2013-02-07 | 2014-08-25 | Mitsubishi Electric Corp | 太陽電池モジュールおよび太陽光発電システム |
-
1985
- 1985-01-31 JP JP60016935A patent/JPS61176135A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997001188A1 (de) * | 1995-06-23 | 1997-01-09 | Siemens Aktiengesellschaft | Halbleiteranordnung mit einem fuse-link und darunter angeordneter wanne |
Also Published As
Publication number | Publication date |
---|---|
JPH0573058B2 (enrdf_load_stackoverflow) | 1993-10-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4628590A (en) | Method of manufacture of a semiconductor device | |
US4755864A (en) | Semiconductor read only memory device with selectively present mask layer | |
US4992389A (en) | Making a self aligned semiconductor device | |
US4663644A (en) | Semiconductor device and method of manufacturing the same | |
US4723155A (en) | Semiconductor device having a programmable fuse element | |
US3518506A (en) | Semiconductor device with contact metallurgy thereon,and method for making same | |
US4567641A (en) | Method of fabricating semiconductor devices having a diffused region of reduced length | |
EP0091686B1 (en) | Semiconductor device having a diffused region of reduced length and method of fabricating the same | |
KR900002084B1 (ko) | 반도체장치 | |
US4730208A (en) | Semiconductor device | |
KR900007048B1 (ko) | 종형 mos 반도체장치 | |
KR100214855B1 (ko) | 정전기 방지용 트랜지스터 및 그의 제조방법 | |
US4199778A (en) | Interconnection structure for semiconductor integrated circuits | |
KR0163943B1 (ko) | 반도체 소자 제조방법 | |
JPS61176135A (ja) | 半導体装置 | |
US6440781B1 (en) | Method of adding bias-independent aluminum bridged anti-fuses to a tungsten plug process | |
US5227319A (en) | Method of manufacturing a semiconductor device | |
JPS6351382B2 (enrdf_load_stackoverflow) | ||
US5204735A (en) | High-frequency semiconductor device having emitter stabilizing resistor and method of manufacturing the same | |
US5101262A (en) | Semiconductor memory device and method of manufacturing it | |
JPH0541481A (ja) | 半導体集積回路 | |
JPS6351383B2 (enrdf_load_stackoverflow) | ||
US5075754A (en) | Semiconductor device having improved withstanding voltage characteristics | |
JPS6321341B2 (enrdf_load_stackoverflow) | ||
JPS6237822B2 (enrdf_load_stackoverflow) |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |