JPS61171189A - 半導体レ−ザ - Google Patents
半導体レ−ザInfo
- Publication number
- JPS61171189A JPS61171189A JP1194385A JP1194385A JPS61171189A JP S61171189 A JPS61171189 A JP S61171189A JP 1194385 A JP1194385 A JP 1194385A JP 1194385 A JP1194385 A JP 1194385A JP S61171189 A JPS61171189 A JP S61171189A
- Authority
- JP
- Japan
- Prior art keywords
- inp
- layer
- reflectance
- semiconductor laser
- face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 36
- 238000000034 method Methods 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 7
- 238000003776 cleavage reaction Methods 0.000 abstract 2
- 230000007017 scission Effects 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 20
- 230000003287 optical effect Effects 0.000 description 14
- 230000010355 oscillation Effects 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1194385A JPS61171189A (ja) | 1985-01-25 | 1985-01-25 | 半導体レ−ザ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1194385A JPS61171189A (ja) | 1985-01-25 | 1985-01-25 | 半導体レ−ザ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61171189A true JPS61171189A (ja) | 1986-08-01 |
JPH0260078B2 JPH0260078B2 (enrdf_load_stackoverflow) | 1990-12-14 |
Family
ID=11791726
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1194385A Granted JPS61171189A (ja) | 1985-01-25 | 1985-01-25 | 半導体レ−ザ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61171189A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001111163A (ja) * | 1999-10-06 | 2001-04-20 | Oki Electric Ind Co Ltd | 半導体レーザ素子 |
-
1985
- 1985-01-25 JP JP1194385A patent/JPS61171189A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001111163A (ja) * | 1999-10-06 | 2001-04-20 | Oki Electric Ind Co Ltd | 半導体レーザ素子 |
Also Published As
Publication number | Publication date |
---|---|
JPH0260078B2 (enrdf_load_stackoverflow) | 1990-12-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4615032A (en) | Self-aligned rib-waveguide high power laser | |
JP3052552B2 (ja) | 面発光型半導体レーザ | |
JPH07273398A (ja) | 半導体ダイオードレーザ | |
US8144741B2 (en) | Semiconductor laser | |
US6606443B2 (en) | Optical transmission device | |
US6391671B2 (en) | Method of producing an optical semiconductor device having a waveguide layer buried in an InP current blocking layer | |
JPH0732285B2 (ja) | 半導体レ−ザ装置 | |
US7274720B2 (en) | Semiconductor laser element having InGaAs compressive-strained quantum-well active layer | |
US4653059A (en) | Distributed feedback semiconductor laser | |
US5737353A (en) | Multiquantum-well semiconductor laser | |
US6330263B1 (en) | Laser diode having separated, highly-strained quantum wells | |
JP2882335B2 (ja) | 光半導体装置およびその製造方法 | |
US4726030A (en) | External-coupled-cavity diode laser | |
JP3518834B2 (ja) | 半導体発光素子及び光ファイバ伝送方式 | |
JPS61171189A (ja) | 半導体レ−ザ | |
JPH05136526A (ja) | 半導体レーザ及びその製造方法 | |
JPH04350988A (ja) | 量子井戸構造発光素子 | |
JPH08288586A (ja) | 2μm帯半導体レーザ | |
JP2613975B2 (ja) | 周期利得型半導体レーザ素子 | |
JPH0722215B2 (ja) | 集積型半導体レーザ | |
JP2550729B2 (ja) | 半導体レーザ | |
JP2723921B2 (ja) | 半導体レーザ素子 | |
JP2716125B2 (ja) | 光増幅器 | |
JPS6218782A (ja) | 埋込み構造半導体レ−ザ | |
US6618419B1 (en) | Semiconductor laser |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |