JPS6117032A - Microscope-laser raman spectrometer - Google Patents
Microscope-laser raman spectrometerInfo
- Publication number
- JPS6117032A JPS6117032A JP13761684A JP13761684A JPS6117032A JP S6117032 A JPS6117032 A JP S6117032A JP 13761684 A JP13761684 A JP 13761684A JP 13761684 A JP13761684 A JP 13761684A JP S6117032 A JPS6117032 A JP S6117032A
- Authority
- JP
- Japan
- Prior art keywords
- light
- solid angle
- scattered light
- variable aperture
- objective lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001069 Raman spectroscopy Methods 0.000 title claims description 12
- 239000007787 solid Substances 0.000 claims abstract description 12
- 230000003287 optical effect Effects 0.000 claims abstract description 7
- 230000005284 excitation Effects 0.000 claims description 6
- 238000001228 spectrum Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 11
- 230000006378 damage Effects 0.000 abstract 2
- 239000000523 sample Substances 0.000 description 6
- 238000004364 calculation method Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/44—Raman spectrometry; Scattering spectrometry ; Fluorescence spectrometry
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Spectrometry And Color Measurement (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は結晶方位決定を可能とする顕微レーザラマン分
光装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a microlaser Raman spectroscopy device that enables crystal orientation determination.
(従来技術とその問題点)
近年、集積回路の高速化、3次元化を目的として、絶縁
体上のシリコン膜(SOI)作成の技術が開発され、デ
バイスの試作も行われる段階に致っている。SOIにお
ける欠陥の主要なものはクラック及びグレインバウンダ
リであり、この低減が極めて重要な課題となってきた。(Prior art and its problems) In recent years, with the aim of increasing the speed of integrated circuits and making them three-dimensional, technology for creating silicon films on insulators (SOI) has been developed, and devices are now at the stage of being prototyped. There is. The main defects in SOI are cracks and grain boundaries, and their reduction has become an extremely important issue.
もう一つの問題として、レーザ等によって再結晶化され
たシリコングレインの結晶方位の制御という点が6C1
このためには再結晶化グレインの方位を非破壊・非接触
で、速やかに測定する必要がある。従来、このために用
いられてきfcX111回折法、あるいはエレクトロン
・チャンネリング法(ECP法)には、それぞれ大領域
からの信号しか得られない、あるいは極めて表面層の信
、号しか得られないという欠点があった。Another problem is the control of crystal orientation of silicon grains recrystallized by laser etc.
For this purpose, it is necessary to quickly measure the orientation of recrystallized grains in a non-destructive and non-contact manner. Conventionally, the fcX111 diffraction method and the electron channeling method (ECP method) that have been used for this purpose have the disadvantage that they can only obtain signals from a large area or only from the very surface layer. was there.
(発明の目的)
本発明は、光分に収束されたレーザ光をプローブとして
用いる顕微レーザラマン分光装置を改良して、SOI等
の結晶に内在する歪のみならず、その結晶方位の決定を
も可能にすることを目的としている。(Objective of the Invention) The present invention improves a microlaser Raman spectrometer that uses a focused laser beam as a probe, making it possible to determine not only the strain inherent in crystals such as SOI but also their crystal orientation. It is intended to be.
(発明の構成)
本発明によれば励起レーザ光を絞って試料に照射し、放
出されるラマン散乱光を集光し11分光する顕微レーザ
ラマン分光装置において;開口数の充分大きb対物レン
ズによって集光した散乱光の光学径路中に、集光立体角
を任意に可変できる可変アパーチャを設け、任意の立体
角内の散乱光を分光可能とし、結晶方位決定を可能りし
た事を特徴とする顕微レーザラマン分光装置が得られる
。(Structure of the Invention) According to the present invention, in a microlaser Raman spectrometer that narrows down the excitation laser beam and irradiates the sample, and collects the emitted Raman scattered light into 11 minutes; A microscope characterized in that a variable aperture is provided in the optical path of the scattered light that can arbitrarily change the solid angle of convergence, thereby making it possible to separate the scattered light within any solid angle and determining the crystal orientation. A laser Raman spectrometer is obtained.
(構成の詳細な説明)
本発明は、上述の構成をとることにより、従来技術の問
題点を解決した。(Detailed Description of Configuration) The present invention solves the problems of the prior art by adopting the above-described configuration.
従来、レーザラマン分光によって、主に測定さVl’−
ス(Appl、 Phys−Lett 、44 (19
84)535)に述べられている、入射角の偏光方向を
変えて測定する方法が知られているが、この方法は補正
が複雑になるという欠点がある。Conventionally, Vl'- is mainly measured by laser Raman spectroscopy.
Appl, Phys-Lett, 44 (19
84) and 535), in which measurement is performed by changing the polarization direction of the incident angle, but this method has the disadvantage that correction is complicated.
本発明は散乱光の方向性について注目し、集光立体角を
、極めて大きい範囲で変化させるために光学径路中に可
変アパーチャを設けたものである。The present invention focuses on the directionality of scattered light, and provides a variable aperture in the optical path in order to change the solid angle of convergence over an extremely large range.
′基本的構成の一例を第1図に示す。'An example of the basic configuration is shown in Figure 1.
図中の1は励起レーザ光全示し、ハーフミラ2と対物レ
ンズ3を通って試料4上で直径約11tmにまで収束さ
れる。ラマン散乱光は図中では点線で示されているが、
開口数の大きい対物レンズを大きい立体角で集光した後
、可変アパーチャ5によって、“その集光立体角を可変
に調節される。本発明の主要々働きをする、この可変ア
パーチャ5の位置は、この位置に限定されるものではな
いが、対物レンズの直径の位置は励起レーザ光収光に不
都合を生じさせるため好ましくなく、効果的に立体角が
可変できるように、光径の広がった位置に置くことが望
ましい。可変アパーチャを通過した散乱光は、これに続
く光学系6,7・8・ 9を通シ、分光器10内に導か
れる。偏光の条件を変えるための、%波長板11、偏光
フィルタ12が、さらに必要であり、これにより、YY
ハ■コα、XX光強度をそれぞれ測定する。1 in the figure indicates the entire excitation laser beam, which passes through the half mirror 2 and the objective lens 3 and is focused onto the sample 4 to a diameter of about 11 tm. Raman scattered light is shown as a dotted line in the figure,
After condensing light at a large solid angle using an objective lens with a large numerical aperture, the condensing solid angle is variably adjusted by the variable aperture 5. Although it is not limited to this position, the position of the diameter of the objective lens is not preferable because it causes problems in convergence of the excitation laser beam, and the position where the diameter of the objective lens is widened is preferable so that the solid angle can be effectively varied. The scattered light that has passed through the variable aperture is guided into the spectrometer 10 through the following optical systems 6, 7, 8, and 9. A % wavelength plate is used to change the polarization conditions. 11, a polarizing filter 12 is additionally required, which allows YY
Measure the light intensity of box α and XX, respectively.
(実施例)
励起光としてArイオンレーザからの488OAの光を
使用し、棒状ヒータによりPo7ySiを再結晶化させ
た再結晶化Si / 510g/Si 構造のSOIを
測定した。対物レンーイとして開口数0.9、倍率10
0倍のレンズを使用すると、レーザ光はLc+mまで収
束され、照射位置を確認した状態で散乱光が取シ出せる
。構成は第1図に示すものとはぼ同じであり、ミラー7
の上部に試料像観察光学系が付加されている。可変アパ
ーチャ5は、直径が4mmから0.5 qnまで可変で
きるいわゆる可変しぼりを使用した。この範囲の直径変
化で、開口数は実効的に0.9から0.2まで変化し、
かつ観察像倍率の低下も生じない。この開口数の変化に
より、方向性を持つラマン散乱光の収集される割合は変
化し、YY、YX、XY、XX光強度も変化する。(Example) Using 488 OA light from an Ar ion laser as excitation light, the SOI of a recrystallized Si/510 g/Si structure in which Po7ySi was recrystallized using a rod-shaped heater was measured. As an objective lens, numerical aperture is 0.9 and magnification is 10.
When a 0x lens is used, the laser beam is converged to Lc+m, and the scattered light can be extracted while confirming the irradiation position. The configuration is almost the same as that shown in FIG.
A sample image observation optical system is added to the top of the unit. The variable aperture 5 uses a so-called variable aperture whose diameter can be varied from 4 mm to 0.5 qn. With a diameter change in this range, the numerical aperture effectively changes from 0.9 to 0.2,
Moreover, no decrease in observation image magnification occurs. Due to this change in the numerical aperture, the rate at which directional Raman scattered light is collected changes, and the YY, YX, XY, and XX light intensities also change.
実際の方位決定には、さらに、この値を用いての数値計
算シミーレージ盲ンが必要になるが、この数値計算はい
ったん必要なパラメータを用いて計算しておけば充分で
あり、解析の手続きは、充分簡単なものとなる。In order to actually determine the orientation, a numerical calculation using this value is required, but it is sufficient to perform this numerical calculation once using the necessary parameters, and the analysis procedure is , is simple enough.
結晶粒方位が実験室座標系からオイラ角α、β。The grain orientation is Euler angle α, β from the laboratory coordinate system.
いて
Bs=M(α、β、γ)Rz−M(α、β、γ)・Ei
となる。散乱光が方向性を持っているという点を考慮す
れば、特定の立体角に入る後方散乱光だけを集めればY
X!=;XYとなり、YY、 YX、 XY、 XX魔
光強摩を測定し、偏光による感度差を補正する。Bs=M(α, β, γ)Rz−M(α, β, γ)・Ei
becomes. Considering that scattered light has directionality, if we collect only the backscattered light that falls within a specific solid angle, Y
X! =;
数種類のNAの状態で測定し、α、β、γを変えて計算
しておき一致するようなものを、選び出す。Measurements are made under several different NA conditions, and calculations are performed while changing α, β, and γ, and those that match are selected.
上記の試料においては棒状ヒーターが走査された方向K
<100)方向に配向し、面垂直方向にわずかな傾き
が存在する事が示された。アパーチャ径が可変である点
は、方位決定の精度を本向上させる。In the above sample, the direction K in which the rod-shaped heater was scanned
<100) direction, with a slight inclination in the direction perpendicular to the surface. The variable aperture diameter greatly improves the accuracy of orientation determination.
(発明の効果)
以上に述べた様に1本発明け、非接触φ非破壊で結晶の
方位決定を速やかに行う事を可能とした。(Effects of the Invention) As described above, the present invention has made it possible to quickly determine the orientation of a crystal in a non-contact and non-destructive manner.
また、対象とする結晶はSiに限定されるものでは々く
、他の対称性を持つ結晶についても、これに固有のラン
ツルを用いて数値計算を行なっておけば利用可能である
。Furthermore, the target crystal is not limited to Si; crystals with other symmetries can also be used if numerical calculations are performed using the Landzl specific to the crystal.
第1図は本発明の基本構成の一例を示す図で、図中の1
は励起レーザ光、2はハーフミラ、3は対物レンズ、4
1−j:試料、5は可変アパーチャ、6はレンズ、7は
ミラー、8はピンホール、9は結合レンズ、10は分光
器、11は各波長板、12は偏光フィルタ金示す。
−目FIG. 1 is a diagram showing an example of the basic configuration of the present invention.
is an excitation laser beam, 2 is a half mirror, 3 is an objective lens, 4
1-j: Sample, 5 is a variable aperture, 6 is a lens, 7 is a mirror, 8 is a pinhole, 9 is a coupling lens, 10 is a spectrometer, 11 is each wavelength plate, and 12 is a polarizing filter gold. -eyes
Claims (1)
散乱光を集光し分光する顕微レーザラマン分光装置にお
いて、開口数の充分大きい対物レンズによって集光した
散乱光の光学径路中に、集光立体角を任意に可変できる
可変アパーチャを設けた事を特徴とする顕微レーザラマ
ン分光装置。In a microlaser Raman spectrometer that narrows down the excitation laser beam and irradiates the sample, and then collects and spectrally spectra the emitted Raman scattered light, an objective lens with a sufficiently large numerical aperture focuses the scattered light into an optical path. A microlaser Raman spectrometer characterized by having a variable aperture that can arbitrarily vary the solid angle.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13761684A JPS6117032A (en) | 1984-07-03 | 1984-07-03 | Microscope-laser raman spectrometer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13761684A JPS6117032A (en) | 1984-07-03 | 1984-07-03 | Microscope-laser raman spectrometer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6117032A true JPS6117032A (en) | 1986-01-25 |
Family
ID=15202840
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13761684A Pending JPS6117032A (en) | 1984-07-03 | 1984-07-03 | Microscope-laser raman spectrometer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6117032A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4802760A (en) * | 1987-03-25 | 1989-02-07 | Mitsubishi Denki Kabushiki Kaisha | Raman microprobe apparatus for determining crystal orientation |
JPH03123560U (en) * | 1990-03-26 | 1991-12-16 | ||
WO2009014306A1 (en) * | 2007-07-25 | 2009-01-29 | Yong Bum Kim | Raman microscope with excellent ratio of signal to noise |
WO2009133980A1 (en) * | 2008-05-01 | 2009-11-05 | Yong Bum Kim | Raman microscope |
-
1984
- 1984-07-03 JP JP13761684A patent/JPS6117032A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4802760A (en) * | 1987-03-25 | 1989-02-07 | Mitsubishi Denki Kabushiki Kaisha | Raman microprobe apparatus for determining crystal orientation |
JPH03123560U (en) * | 1990-03-26 | 1991-12-16 | ||
WO2009014306A1 (en) * | 2007-07-25 | 2009-01-29 | Yong Bum Kim | Raman microscope with excellent ratio of signal to noise |
KR100882490B1 (en) * | 2007-07-25 | 2009-02-06 | 김영범 | Raman microscope with excellent ratio of signal to noise |
WO2009133980A1 (en) * | 2008-05-01 | 2009-11-05 | Yong Bum Kim | Raman microscope |
KR100936645B1 (en) | 2008-05-01 | 2010-01-14 | 김영범 | Raman microscope |
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