JPS61168518A - Treatment of waste gas containing silane - Google Patents

Treatment of waste gas containing silane

Info

Publication number
JPS61168518A
JPS61168518A JP840785A JP840785A JPS61168518A JP S61168518 A JPS61168518 A JP S61168518A JP 840785 A JP840785 A JP 840785A JP 840785 A JP840785 A JP 840785A JP S61168518 A JPS61168518 A JP S61168518A
Authority
JP
Japan
Prior art keywords
silane
alumina
waste gas
reactor
monosilane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP840785A
Other languages
Japanese (ja)
Other versions
JPH051206B2 (en
Inventor
Atsuhiko Hiai
日合 淳彦
Nobuhiro Kitano
北野 信宏
Hatsuo Inoue
井上 初男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Toatsu Chemicals Inc
Original Assignee
Mitsui Toatsu Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Toatsu Chemicals Inc filed Critical Mitsui Toatsu Chemicals Inc
Priority to JP840785A priority Critical patent/JPS61168518A/en
Publication of JPS61168518A publication Critical patent/JPS61168518A/en
Publication of JPH051206B2 publication Critical patent/JPH051206B2/ja
Granted legal-status Critical Current

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  • Silicon Compounds (AREA)

Abstract

PURPOSE:To eliminate monosilane from waste gas containing monosilane at a low concentration, economically and safely, by contacting the silane-containing waste gas with alumina at a temperature within a specific range, thereby decomposing the monosilane. CONSTITUTION:A silane-containing gas is made to contact with an alumina [preferably gamma-alumina having large specific surface area (>=100m<2>/g) at >=100 deg.C (especially preferably 100-600 deg.C) to effect the decomposition of silane. An example of the apparatus is shown in the figure. The silane-containing waste gas is introduced through the line 1 into the reactor 2 packed with alumina particles. The reactor is heated with the heater 4 and controlled to a proper temperature of >=100 deg.C. The silane is decomposed into silicon and hydrogen in the reactor. The most part of the produced silicon is deposited on the alumina, and there is little entrainment of silicon in the treated gas.

Description

【発明の詳細な説明】 産業上の利用分野 この発明は、シラン類含有廃ガスの処理方法に関する。[Detailed description of the invention] Industrial applications The present invention relates to a method for treating waste gas containing silanes.

特に希薄なシラン類を含む廃ガスの処理方法に関する。In particular, it relates to a method for treating waste gas containing dilute silanes.

従来の技術 モノシラン、ジシラン、クロルシランなどのシラン類は
半導体用、アモルファス太陽電池用、電子写真感光体用
等の原料ガスとして、近年特に大量に使用されてきてい
る。使用量の増加に伴い。
BACKGROUND OF THE INVENTION Silanes such as monosilane, disilane, and chlorosilane have been used in large quantities in recent years as raw material gases for semiconductors, amorphous solar cells, electrophotographic photoreceptors, and the like. With increasing usage.

その製造プロセスをはじめとするシラン類の取り扱い設
備から発生するシラン類含有廃ガスから有害なシラン類
の除害が重要な問題となって来ている。
Eliminating harmful silanes from silane-containing waste gases generated from silane-handling equipment, including manufacturing processes, has become an important issue.

これらのシラン類含有廃ガスは従来1)安全な濃度にま
で不活性ガスで希釈する方法 2)空気と接触させ燃焼
させて安全な酸化ケイ素として放出する方法 3)吸着
剤でシラン類を選択的に吸着処理する方法などの方法で
処理されていた。
Conventionally, these silane-containing waste gases are treated by 1) diluting them with inert gas to a safe concentration, 2) burning them in contact with air and releasing them as safe silicon oxide, and 3) selectively removing silanes using an adsorbent. It was treated using methods such as adsorption treatment.

発明が解決しようとする問題点 従来の方法(1)では、シラン類の総量が減少せず。The problem that the invention aims to solve Conventional method (1) does not reduce the total amount of silanes.

環境汚染につながる可能性がある。(2)では100%
除外することが出来ず例えばモノシランでは1チ程度の
未処理モノシランが大気に放出される。(3)では除去
効率は高いが、吸着剤の使用量が多く必要であり、高価
である等の欠点がある。
It may lead to environmental pollution. (2) is 100%
For example, in the case of monosilane, about 1 liter of untreated monosilane is released into the atmosphere. Method (3) has high removal efficiency, but has drawbacks such as requiring a large amount of adsorbent and being expensive.

特に廃ガス中のシラン類濃度が薄い(例えばモノシラン
では1%以下では空気とは直接燃焼することが出来ない
)シラノ類含有廃ガスの簡便な処理方法の開発が望まれ
ている。
In particular, it is desired to develop a simple method for treating silane-containing waste gas in which the concentration of silanes in the waste gas is low (for example, monosilane cannot be directly combusted with air at 1% or less).

゛ 問題点を解決するための手段 本発明者は、前記問題点を解決するため鋭意研究を行い
、本発明を完成するに至った。
゛ Means for Solving the Problems The inventor of the present invention conducted extensive research in order to solve the above-mentioned problems, and finally completed the present invention.

すなわち5本発明のヅラン類含有廃ガスの処理方法は、
シラン類含有廃ガスを100℃以上の温度でアルミナと
接触処理することを特徴とするシラン含有ガスの処理方
法である。
In other words, the method for treating waste gas containing silanes of the present invention is as follows:
This is a method for treating a silane-containing gas, characterized by contacting the silane-containing waste gas with alumina at a temperature of 100° C. or higher.

本発明においてシラン類含有廃ガスとはモノシラン、ジ
シラ/、クロル・シランなど有毒性、自燃性のシラン類
を含有するガスであり、大部分はヘリウム、チノ素、ア
ルゴン、水素などの不活性ガスからなるものである。特
に本発明は比較的シラン類濃度の薄い廃ガスに適用する
と効果的である。
In the present invention, silane-containing waste gas is a gas containing toxic and self-combustible silanes such as monosilane, disilane, chlorosilane, etc., and is mostly inert gas such as helium, chino, argon, hydrogen, etc. It consists of In particular, the present invention is effective when applied to waste gas having a relatively low concentration of silanes.

本発明においてアルミナとしては特殊なものを用いる必
要はないが比表面積の大きい(100m/り以上)r−
アルミナを用いるのが好ましい。
In the present invention, it is not necessary to use a special alumina, but r-
Preferably, alumina is used.

又、粒径については特に制限はないが、後述するように
流動層型の反応器を用いる際には反応器に適した粒径の
アルミナを使用する必要がある。
Although there is no particular restriction on the particle size, when a fluidized bed type reactor is used, as will be described later, it is necessary to use alumina having a particle size suitable for the reactor.

本発明において接触処理温度としては100℃以上、特
に100〜600℃が効果的である。100℃未満では
シラン類の分解速度が遅く、処理後のガス中にシラン類
がかなり残留し好ましくない。又600℃を越えて温度
を上げても特に効果はなく、無駄にエネルギーを消費し
場合によっては分解生成したシランが、処理ガス中に同
伴し好ましくない。
In the present invention, the contact treatment temperature is preferably 100°C or higher, particularly 100 to 600°C. If it is less than 100°C, the decomposition rate of silanes is slow and a considerable amount of silanes remains in the gas after treatment, which is not preferable. In addition, raising the temperature above 600° C. is not particularly effective, wastes energy, and in some cases decomposes and produces silane, which is not preferred because it is entrained in the processing gas.

第1図に本発明の方法を適用するに好適な装置の1例を
示す。
FIG. 1 shows an example of an apparatus suitable for applying the method of the present invention.

シラン類を含有する廃ガスは、配管1よりアルミナの粒
子を充填した反応器2に導入される。反応器は加熱用ヒ
ーター4によって加熱され、100’C以上の適当な温
度に制御される。反応器では、シラン類は分解されシリ
コンと水素に分解される。
The waste gas containing silanes is introduced from a pipe 1 into a reactor 2 filled with alumina particles. The reactor is heated by a heating heater 4 and controlled to an appropriate temperature of 100'C or higher. In the reactor, the silanes are decomposed into silicon and hydrogen.

生成したシリコンは大部分アルミナに付着し処理された
ガス中に、はとんど同伴されることがない。
Most of the produced silicon adheres to the alumina and is hardly entrained in the treated gas.

処理されたガスは必要に応じ冷却器5を経て冷却した後
系外に放出される。反応器の形状は特に制限はないが流
動層型の反応器を用いると閉塞等の問題がなく好ましい
The treated gas is cooled through a cooler 5 if necessary and then discharged to the outside of the system. Although there is no particular restriction on the shape of the reactor, it is preferable to use a fluidized bed type reactor since there are no problems such as clogging.

作用 本発明は、アルミナ100℃以上でと接触することでシ
ラン類が分解し、シリコンと水素となり。
Function In the present invention, silane decomposes when it comes into contact with alumina at a temperature of 100°C or higher, forming silicon and hydrogen.

しかモ生じたシリコンはアルミナに付着するため処理さ
れたガス中には毒性のあるシラン類がほとんど含有され
なくなるものと思われる。
However, since the silicon produced adheres to the alumina, it is thought that the treated gas will contain almost no toxic silanes.

発明の効果 本発明の方法により、従来の技術では、低濃度のモノシ
ラノを含む廃ガスを経済的にかつ、安全に除外処理出来
なかったものを1本発明のアルミナ触媒を使用すること
によって、安価に処理することが可能となり、半導体工
業、アモルファス太陽電池、電子写真感光体ドラム等の
製造工程より発生する廃ガスの処理方法として工業的に
極めて価[直がある。
Effects of the Invention By using the method of the present invention, waste gas containing low concentrations of monosilano, which could not be economically and safely removed using conventional techniques, can be removed at low cost by using the alumina catalyst of the present invention. This makes it possible to treat waste gases from the semiconductor industry, amorphous solar cells, electrophotographic photosensitive drums, and other manufacturing processes.

実施例 以下本発明を実施例により具体的に説明する。Example The present invention will be specifically explained below using examples.

粒径60〜150メツシユ、表面積zbom/gのγ−
アルミナ100 cc  を充填した25φx 500
 hの反応器にモノシラン 2500ppm を含む廃
ガスを2001/hで供給し、50°C,150℃、2
50℃。
γ- particle size 60-150 mesh, surface area zbom/g
25φx 500 filled with 100 cc of alumina
Waste gas containing 2,500 ppm of monosilane was supplied to the reactor of h at a rate of 2,001/h, and the reactor was heated at 50°C, 150°C, 2
50℃.

350°G、450°C,550℃の各温度で処理した
ところ表−1に示すモノシラン濃度の処理ガスを得た。
When treated at temperatures of 350°G, 450°C, and 550°C, processing gases with monosilane concentrations shown in Table 1 were obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の方法を適用するに好適な装置の1例を
示すフローシートである。
FIG. 1 is a flow sheet showing an example of an apparatus suitable for applying the method of the present invention.

Claims (1)

【特許請求の範囲】[Claims] (1)シラン類含有廃ガスを100℃以上の温度でアル
ミナと接触処理せしめて分解することを特徴とするシラ
ン類含有廃ガスの処理方法。
(1) A method for treating silane-containing waste gas, which comprises decomposing the silane-containing waste gas by bringing it into contact with alumina at a temperature of 100° C. or higher.
JP840785A 1985-01-22 1985-01-22 Treatment of waste gas containing silane Granted JPS61168518A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP840785A JPS61168518A (en) 1985-01-22 1985-01-22 Treatment of waste gas containing silane

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP840785A JPS61168518A (en) 1985-01-22 1985-01-22 Treatment of waste gas containing silane

Publications (2)

Publication Number Publication Date
JPS61168518A true JPS61168518A (en) 1986-07-30
JPH051206B2 JPH051206B2 (en) 1993-01-07

Family

ID=11692302

Family Applications (1)

Application Number Title Priority Date Filing Date
JP840785A Granted JPS61168518A (en) 1985-01-22 1985-01-22 Treatment of waste gas containing silane

Country Status (1)

Country Link
JP (1) JPS61168518A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004018080A1 (en) * 2002-08-23 2004-03-04 The Boc Group Plc Utilisation of waste gas streams

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004018080A1 (en) * 2002-08-23 2004-03-04 The Boc Group Plc Utilisation of waste gas streams

Also Published As

Publication number Publication date
JPH051206B2 (en) 1993-01-07

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Legal Events

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LAPS Cancellation because of no payment of annual fees