JPS61166050A - Marking method for ic package - Google Patents

Marking method for ic package

Info

Publication number
JPS61166050A
JPS61166050A JP59258595A JP25859584A JPS61166050A JP S61166050 A JPS61166050 A JP S61166050A JP 59258595 A JP59258595 A JP 59258595A JP 25859584 A JP25859584 A JP 25859584A JP S61166050 A JPS61166050 A JP S61166050A
Authority
JP
Japan
Prior art keywords
cap
nickel layer
marking
nickel
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59258595A
Other languages
Japanese (ja)
Other versions
JPH033949B2 (en
Inventor
Takanori Watanabe
孝訓 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59258595A priority Critical patent/JPS61166050A/en
Publication of JPS61166050A publication Critical patent/JPS61166050A/en
Publication of JPH033949B2 publication Critical patent/JPH033949B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
    • H01L2223/54486—Located on package parts, e.g. encapsulation, leads, package substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)

Abstract

PURPOSE:To enable a distinct marking by laser beams by a method wherein the surface of a cap proper consisting of an iron-nickel group alloy is plated with a nickel layer in predetermined film thickness, a cap is sealed to a package, the cap is irradiated by heat rays to alloy the nickel layer and the cap proper, the color of the cap is made different from the nickel layer and the marking is conducted. CONSTITUTION:The surface of a cap proper composed of an iron-nickel group alloy is plated with a nickel layer in predetermined film thickness, said cap is sealed to a package, said cap is irradiated by heat rays to alloy said nickel layer and the cap proper, the color of the cap is made different from said nickel layer, and a marking is conducted. A YAG laser is used as laser beams 15, and the marking is drawn by a laser device according to a prescribed mark. Consequently, the nickel layer 11 and one part of the main body 9 consisting of Kovar are alloyed, and the alloying section 13 is blackened. Since the nickel layer 11 has a silver color, the marking by the alloying section 13 is made clear.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、ＩＣパッケージの捺印方法に係る。[Detailed description of the invention] [Industrial application field] The present invention relates to a method of marking an IC package.

〔従来例とその問題点〕[Conventional examples and their problems]

ＩＣパッケージの捺印方法として、レーザを照射するこ
とで捺印を行なうことが提案されている。As a method of marking an IC package, it has been proposed to perform the marking by irradiating a laser.

一般にレーザ光線をＩＣパッケージのキャップ表面等に
照射し所定のマークを描画するのであるが、ＩＣパッケ
ージのキャップ表面のみを熔かすようなやり方ではキャ
ップ表面の例えばニソケルメッセ層のみ熱変形し、表面
の凹凸によりマークや番号が表示されるだけで、全体と
は色の違い等もなく見えに（いという欠点があった。Generally, a laser beam is irradiated onto the cap surface of an IC package to draw a predetermined mark, but if only the cap surface of the IC package is melted, only the Nisokelmesse layer on the cap surface will be thermally deformed, resulting in surface irregularities. The disadvantage was that only the marks and numbers were displayed, and there was no difference in color from the overall image.

〔問題を解決するための手段〕[Means to solve the problem]

本発明は見えやすいレーザ捺印を行なうことを目的とし
、鉄、ニッケル系の合金よりなるキャップ本体の表面に
、所定の膜厚のニッケル層をメッキし、該キャップをパ
ッケージに封止し、該キャンプに熱線を照射して該ニッ
ケル層とキャップ本体とを合金化して該ニッケル層とは
異なる色にし捺印を行なう工程を含むことを特徴とする
ＩＣパッケージの捺印方法により達成される。The purpose of the present invention is to perform laser marking that is easy to see.The surface of a cap body made of an iron and nickel alloy is plated with a nickel layer of a predetermined thickness, the cap is sealed in a package, and the This is achieved by a method for marking an IC package, which includes the step of irradiating the nickel layer with a hot ray to alloy the nickel layer and the cap body so that the nickel layer has a color different from that of the nickel layer.

〔作　用〕[For production]

一般にキャップは鉄、ニッケル系の合金にて形成され、
表面が二・７ケルにてメッキされている。Generally, the cap is made of iron and nickel alloy.
The surface is plated with 2.7 Kel.

そこで本発明ではレーザ光線をある程度強いパワーにし
、表面のニッケル層に加え本体の合金まで一緒に溶かし
てニッケルとコバールの合金層としている。その結果そ
の合金は黒くなり、まわりのニッケル層のシルバー色と
明瞭に区別され、しかもそのような合金ではコバールは
錆びないことが確認されていて好都合である。Therefore, in the present invention, the power of the laser beam is increased to a certain extent, and in addition to the nickel layer on the surface, the alloy of the main body is melted to form an alloy layer of nickel and Kovar. As a result, the alloy becomes black, clearly distinguishable from the silver color of the surrounding nickel layer, and advantageously, Kovar has been shown not to rust in such alloys.

〔実施例〕〔Example〕

第１図、第２図に本発明の一実施例を示す要部断面図を
示す。FIGS. 1 and 2 are sectional views of essential parts showing an embodiment of the present invention.

１はセラミックよりなるパッケージ本体で、チップ３を
収容し金属キャップ７によりハンダ５を介して封止され
ている。本実施例ではキャップ７は本体９が鉄、ニッケ
ル、コバルト合金（コバール：商品名）よりなり、その
表面には錆び止め用にニッケルＮ１１がメッキされてい
る。Reference numeral 1 denotes a package body made of ceramic, which houses a chip 3 and is sealed with a metal cap 7 via solder 5. In this embodiment, the main body 9 of the cap 7 is made of iron, nickel, and cobalt alloy (Kovar: trade name), and its surface is plated with nickel N11 for rust prevention.

このニッケル層１１はレーザ光線１５が照射されその部
分がコバール９の一部と合金化されるよう１〜３μｍの
厚さに抑えられている。This nickel layer 11 is kept to a thickness of 1 to 3 μm so that the laser beam 15 is irradiated and the nickel layer 11 is alloyed with a portion of the Kovar 9.

そしてレーザ光線１５としてはＹＡＧレーザを使用しそ
のパワーは５０Ｗで、所定のマークに従って図示しない
レーザ装置により描画される。その結果ニッケル層１１
とコバールよりなる本体９の一部とが合金化され（１３
）、その合金部工３は黒色となる。ニッケルＦｉｌｌは
シルバー色数、合金部１３による捺印は明瞭になる。A YAG laser is used as the laser beam 15 with a power of 50 W, and drawing is performed by a laser device (not shown) according to a predetermined mark. As a result, the nickel layer 11
and a part of the main body 9 made of Kovar are alloyed (13
), the alloy part 3 becomes black. The nickel fill has a silver color and the marking by the alloy part 13 is clear.

ニッケル層１１の厚み１６が厚すぎると、図中１４に示
すようにニッケル層１１の表面のみが溶け、そこに凹凸
がつくだけで、色は周囲と同じ故捺印が光って見ずらく
なる。厚いニッケル層１１に対しレーザのパワーを大き
くして無理にキャップ本体９まで熔かそうとすると捺印
の周辺まで黒く変化し微細な捺印ができなくなる。If the thickness 16 of the nickel layer 11 is too thick, only the surface of the nickel layer 11 will melt as shown at 14 in the figure, and only the surface will become uneven, and since the color is the same as the surrounding area, the stamp will shine and be difficult to see. If the laser power is increased to forcibly melt the thick nickel layer 11 down to the cap body 9, the periphery of the marking will turn black, making it impossible to make a fine marking.

ニッケル層１１と鉄、コバルト、ニッケル合金のコバー
ル層９との合金１３によればコバール層の錆び防止にも
なることを確認している。It has been confirmed that the alloy 13 of the nickel layer 11 and the Kovar layer 9 made of iron, cobalt, and nickel alloy prevents the Kovar layer from rusting.

〔発明の効果〕〔Effect of the invention〕

本発明によればレーザ光線により明瞭な捺印を行なうこ
とができる。According to the present invention, a clear seal can be made using a laser beam.

【図面の簡単な説明】[Brief explanation of drawings]

第１，２図は本発明の一実施例を示す要部断面図である
。 図中、７はキャップ、９は鉄、コバルト、ニッケル合金
の本体、１１はニッケル層、１３は合金層である。 芥　１ｆｌ１ 竿２国1 and 2 are sectional views of essential parts showing one embodiment of the present invention. In the figure, 7 is a cap, 9 is a main body made of iron, cobalt, and nickel alloy, 11 is a nickel layer, and 13 is an alloy layer. Mustard 1fl1 Rod 2 countries

Claims (1)

【特許請求の範囲】[Claims] 鉄、ニッケル系の合金よりなるキャップ本体の表面に、
所定の膜厚のニッケル層をメッキし、該キャップをパッ
ケージに封止し、該キャップに熱線を照射して該ニッケ
ル層とキャップ本体とを合金化して該ニッケル層とは異
なる色にし捺印を行なう工程を含むことを特徴とするＩ
Ｃパッケージの捺印方法。On the surface of the cap body made of iron and nickel alloy,
A nickel layer of a predetermined thickness is plated, the cap is sealed in a package, the cap is irradiated with heat rays to alloy the nickel layer and the cap body, and the color is different from that of the nickel layer and a stamp is applied. I characterized by including a process
How to stamp a C package.
JP59258595A 1984-12-07 1984-12-07 Marking method for ic package Granted JPS61166050A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59258595A JPS61166050A (en) 1984-12-07 1984-12-07 Marking method for ic package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59258595A JPS61166050A (en) 1984-12-07 1984-12-07 Marking method for ic package

Publications (2)

Publication Number Publication Date
JPS61166050A true JPS61166050A (en) 1986-07-26
JPH033949B2 JPH033949B2 (en) 1991-01-21

Family

ID=17322445

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59258595A Granted JPS61166050A (en) 1984-12-07 1984-12-07 Marking method for ic package

Country Status (1)

Country Link
JP (1) JPS61166050A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6049055A (en) * 1996-02-23 2000-04-11 Orga Kartensysteme Gmbh Method of producing a smart card
US6495914B1 (en) * 1997-08-19 2002-12-17 Hitachi, Ltd. Multi-chip module structure having conductive blocks to provide electrical connection between conductors on first and second sides of a conductive base substrate
US6829816B2 (en) * 2001-01-25 2004-12-14 Murata Manufacturing Co., Ltd. Method of manufacturing nonreciprocal circuit device
CN105172403A (en) * 2015-09-29 2015-12-23 深圳英诺激光科技有限公司 Colorful marking method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5498183A (en) * 1978-01-19 1979-08-02 Nec Corp Semiconductor device graphic display method
JPS57130452A (en) * 1981-02-06 1982-08-12 Fujitsu Ltd Entry of mark of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5498183A (en) * 1978-01-19 1979-08-02 Nec Corp Semiconductor device graphic display method
JPS57130452A (en) * 1981-02-06 1982-08-12 Fujitsu Ltd Entry of mark of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6049055A (en) * 1996-02-23 2000-04-11 Orga Kartensysteme Gmbh Method of producing a smart card
US6495914B1 (en) * 1997-08-19 2002-12-17 Hitachi, Ltd. Multi-chip module structure having conductive blocks to provide electrical connection between conductors on first and second sides of a conductive base substrate
US6829816B2 (en) * 2001-01-25 2004-12-14 Murata Manufacturing Co., Ltd. Method of manufacturing nonreciprocal circuit device
CN105172403A (en) * 2015-09-29 2015-12-23 深圳英诺激光科技有限公司 Colorful marking method

Also Published As

Publication number Publication date
JPH033949B2 (en) 1991-01-21

Similar Documents

Publication Publication Date Title
KR830002567A (en) Welding method of ferroalloys to aluminum and aluminum alloys or refractory metals
DE3169727D1 (en) Base material for firing in order to prepare an intermediate layer between a high melting dental alloy and a tooth porcelain
JPS61166050A (en) Marking method for ic package
EP0133191A3 (en) Method for alloying substances and apparatus for practising the method
JPH0750360A (en) Ceramic lid substrate for semiconductor package
US6390353B1 (en) Integral solder and plated sealing cover and method of making the same
JPH02130947A (en) Semiconductor device
JPH06338236A (en) Covered metal strap as half-finished product for electric contact member and method for attaching of said contact member to support body
JPS609846A (en) Homogeneous low melting point copper base alloy
JPS62253778A (en) Method for cladding noble metal to copper member
JPH04162641A (en) Laser bonding method
JP2005166955A (en) Hermetic seal cap and manufacturing method thereof
JPH0437488A (en) Welding process and welding jig of package
JPS5477249A (en) Laser welding
JPS6146060B2 (en)
JPH0464808B2 (en)
JPH0722188B2 (en) Method for manufacturing seal ring for IC ceramic package
JPH06238420A (en) Manufacture of simplified mold
GB502003A (en) Improvements in and relating to vacuum-tight seals between ceramic material and a metal
JPS5910870B2 (en) Projection formation method for resistance welding
JPH03155487A (en) Laser beam welding method
JPS54131534A (en) Refractory metallic parts having coating layer and process for coating
JPH0687390B2 (en) Impregnated cathode assembly
JPS6032768Y2 (en) airtight terminal
JPS58135782A (en) Diffusion bonding method