JPS61164291A - 半導体レ−ザの製造方法 - Google Patents

半導体レ−ザの製造方法

Info

Publication number
JPS61164291A
JPS61164291A JP613685A JP613685A JPS61164291A JP S61164291 A JPS61164291 A JP S61164291A JP 613685 A JP613685 A JP 613685A JP 613685 A JP613685 A JP 613685A JP S61164291 A JPS61164291 A JP S61164291A
Authority
JP
Japan
Prior art keywords
layer
protective layer
semiconductor substrate
growth
laminated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP613685A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0479157B2 (enExample
Inventor
Haruo Tanaka
田中　治夫
Masahito Mushigami
雅人 虫上
Naotaro Nakada
直太郎 中田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP613685A priority Critical patent/JPS61164291A/ja
Publication of JPS61164291A publication Critical patent/JPS61164291A/ja
Publication of JPH0479157B2 publication Critical patent/JPH0479157B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Lasers (AREA)
JP613685A 1985-01-16 1985-01-16 半導体レ−ザの製造方法 Granted JPS61164291A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP613685A JPS61164291A (ja) 1985-01-16 1985-01-16 半導体レ−ザの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP613685A JPS61164291A (ja) 1985-01-16 1985-01-16 半導体レ−ザの製造方法

Publications (2)

Publication Number Publication Date
JPS61164291A true JPS61164291A (ja) 1986-07-24
JPH0479157B2 JPH0479157B2 (enExample) 1992-12-15

Family

ID=11630086

Family Applications (1)

Application Number Title Priority Date Filing Date
JP613685A Granted JPS61164291A (ja) 1985-01-16 1985-01-16 半導体レ−ザの製造方法

Country Status (1)

Country Link
JP (1) JPS61164291A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03268471A (ja) * 1990-03-19 1991-11-29 Sharp Corp 半導体レーザおよびその製造方法
JP2003041466A (ja) * 2001-07-24 2003-02-13 Okamoto Lace Kk 経編組織の芯鞘ニットヤーン、およびその編成方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03268471A (ja) * 1990-03-19 1991-11-29 Sharp Corp 半導体レーザおよびその製造方法
JP2003041466A (ja) * 2001-07-24 2003-02-13 Okamoto Lace Kk 経編組織の芯鞘ニットヤーン、およびその編成方法

Also Published As

Publication number Publication date
JPH0479157B2 (enExample) 1992-12-15

Similar Documents

Publication Publication Date Title
DE102010046793B4 (de) Kantenemittierende Halbleiterlaserdiode und Verfahren zu dessen Herstellung
CN109217108A (zh) 利用杂质诱导混杂技术制作半导体激光器的方法
JPS61164291A (ja) 半導体レ−ザの製造方法
CN101114757A (zh) 大功率650nm量子阱半导体激光器及其制作方法
JPH0513881A (ja) 半導体レーザの製造方法
JPH0137871B2 (enExample)
JPH0137870B2 (enExample)
JPH0137873B2 (enExample)
JPS6142985A (ja) 半導体レ−ザおよびその製造方法
JPS6367351B2 (enExample)
JPS61166090A (ja) 半導体レ−ザの製造方法
KR100259002B1 (ko) 반도체 레이저와 그 제조방법
JPS6142986A (ja) 半導体レ−ザの製造方法
JPH05121822A (ja) 半導体レーザ装置の製造方法
JPH07263800A (ja) 半導体レーザおよびその製造方法
JP2006147906A (ja) リッジ導波路型半導体レーザ素子の製造方法
JPH08264906A (ja) 半導体レーザおよびその製造方法
JPH08186324A (ja) 半導体レーザおよびその製法
JPH0396290A (ja) 半導体レーザの製造方法
JPH02125686A (ja) 半導体装置の製造方法
JP2006147906A5 (enExample)
JPH05102608A (ja) 埋め込み型半導体レーザ素子の製造方法
JPS6224679A (ja) 半導体レ−ザおよびその製造方法
JPH0430758B2 (enExample)
JPH0744307B2 (ja) 半導体レーザの製造方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term