JPS61164237A - Multilayer probe card - Google Patents

Multilayer probe card

Info

Publication number
JPS61164237A
JPS61164237A JP541885A JP541885A JPS61164237A JP S61164237 A JPS61164237 A JP S61164237A JP 541885 A JP541885 A JP 541885A JP 541885 A JP541885 A JP 541885A JP S61164237 A JPS61164237 A JP S61164237A
Authority
JP
Japan
Prior art keywords
probe
pitch
probes
size
pads
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP541885A
Other languages
Japanese (ja)
Inventor
Hiroshi Yamanouchi
博 山之内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP541885A priority Critical patent/JPS61164237A/en
Publication of JPS61164237A publication Critical patent/JPS61164237A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Measuring Leads Or Probes (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)

Abstract

PURPOSE:To enable to reduce the pitch of pads by a method wherein a probe is separated into the lower layer probe and the upper layer probe, one end of the probes is electrically connected to the wiring conductor to be used for an electric test. CONSTITUTION:The lower probes 9 and 9' and the upper layer probes 8 and 8' are made of an insulating material 7 such as silicon resin and the like in double-layer structure. As the probes are formed in double-layer structure, it is necessary that the pitch of probe arrangement of the upper and the lower layers is set at approximately 150mum, and the pitch of pads can be changed to the pitch with which a bonding can be performed. As a result, the pitch of electrode terminals (pad) can be made small while the electric test technique and the size of the probes which were feretofore in use are being applied, thereby enabling to reduce the size of a semiconductor chip.

Description

【発明の詳細な説明】 本発明はウェハー状態での半導体素子の電気テストに用
いられる探針グローブカードに関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a probe glove card used for electrical testing of semiconductor devices in a wafer state.

通常、半導体装置は一枚のシリコン基板(ウェハー)上
に複数個形成され、ウェハー状で拡散・配線処理を行な
った後、電極端子に探針を立て電気的特性検査(電気テ
スト)を行なう。その後レーザー光線による窪み形成又
は薄いダイヤモンドホイールによる切断等により個々の
半導体素子(半導体チップ)に分離し、電気テストの良
品を、容器に組み込み半導体素子の電極端子と容器のリ
ードとを接続する。
Normally, a plurality of semiconductor devices are formed on a single silicon substrate (wafer), and after diffusion and wiring processing are performed in the wafer shape, a probe is placed on the electrode terminal to perform an electrical characteristic test (electrical test). Thereafter, it is separated into individual semiconductor elements (semiconductor chips) by forming a depression with a laser beam or cutting with a thin diamond wheel, and those that pass the electrical test are placed in a container and the electrode terminals of the semiconductor elements and the leads of the container are connected.

半導体素子の電極端子(パッド)のサイズ及びピッチは
以下の要因によって決定される。
The size and pitch of electrode terminals (pads) of a semiconductor device are determined by the following factors.

(1):パッドサイズは電気テストの面からはプローブ
カードの探針のサイズ及びウェハー状で複数個の半導体
素子を測定する為、連続して測定した時のパッドと探針
との位置合わせ精度によって決定される。又容器のリー
ドとパッドとの接続(ボンディング)の面からはリード
のボンディング方法、リードの製造上の制約及び接続強
度から決定さnる。
(1): Pad size is the size of the tip of the probe card from an electrical test perspective, and the alignment accuracy of the pad and tip when measuring continuously since multiple semiconductor elements are measured in a wafer. determined by In addition, the connection (bonding) between the leads of the container and the pads is determined by the lead bonding method, the manufacturing constraints of the leads, and the connection strength.

(2):パッド・ピッチは電気テストの面からはグロー
ブカードの探針の配列可能なピッチによって決定さ扛、
探針の配列ピッチよりは小さくできずその寸法によって
制限されている。
(2): From the standpoint of electrical testing, the pad pitch is determined by the pitch at which the probes on the glove card can be arranged.
It cannot be made smaller than the array pitch of the probes, and is limited by its size.

又ボンディングの面からはボンディングに於けるパッド
及びリードの塑性変形によって隣り合うパッド及びリー
ドが接触しないパッド間隔(クリアランス)が必要とさ
れる。
Also, from the viewpoint of bonding, pad spacing (clearance) is required so that adjacent pads and leads do not come into contact with each other due to plastic deformation of the pads and leads during bonding.

周知の如く半導体装置の価格は半導体チップサイズによ
って大きく影響を受ける為、パッドピッチを小さくした
り、パッドの配列を複数列にする等種々の方法が行なわ
れているが、プローブカードの探針サイズ及び配列ピッ
チ以下にできず、半導体チップサイズは探針サイズ及び
配列ピッチからの制約が大きなウェイトを占めるように
なってきている。この結果、半導体装置の大規模集積化
に伴ない半導体チップサイズはパッド数によって決定さ
れる傾向にあり、半導体装置の価格は高価になってしま
う。本発明の目的は前記欠点を解決しパッドピッチを縮
小できるプローブカードを提供することである。
As is well known, the price of semiconductor devices is greatly affected by the size of the semiconductor chip, so various methods are being used, such as reducing the pad pitch and arranging the pads in multiple rows. and the array pitch, and the semiconductor chip size is increasingly constrained by the probe size and array pitch. As a result, with the large-scale integration of semiconductor devices, the size of a semiconductor chip tends to be determined by the number of pads, resulting in an increase in the price of the semiconductor device. SUMMARY OF THE INVENTION An object of the present invention is to provide a probe card that can solve the above-mentioned drawbacks and reduce the pad pitch.

本発明の特徴は、半導体チップより大きな開孔部を有す
るプリント基板の一主面に設けられた電気テスト用配線
導体と、開孔部に突出し先端部が半導体チップの電極端
子と相対する位置に設けらrた探針とで構成され、かつ
該探針が絶縁体により下層探針と上層探針とに分離され
、探針の一端が電気テスト用配線導体と電気的に接続さ
れていることである。
The present invention is characterized by a wiring conductor for electrical testing provided on one main surface of a printed circuit board having an opening larger than the semiconductor chip, and a wiring conductor that protrudes into the opening and has a tip facing the electrode terminal of the semiconductor chip. The probe is separated into a lower layer probe and an upper layer probe by an insulator, and one end of the probe is electrically connected to a wiring conductor for electrical testing. It is.

以下に図面を用いて本発明の詳細な説明する。The present invention will be described in detail below using the drawings.

第1図(A)及び(B)は従来のプローブカードを示す
ものである。第1図に於いてIC21プローブカード基
板、2は電気テスト用配線導体、3は探針、4は開孔部
、5は半導体基板、6はバンド、7はシリコン樹脂等の
絶縁体である。尚、電気テスト用配線導体は一部のみ図
示し他は省略している。
FIGS. 1A and 1B show a conventional probe card. In FIG. 1, the IC21 probe card board, 2 is a wiring conductor for electrical testing, 3 is a probe, 4 is an opening, 5 is a semiconductor substrate, 6 is a band, and 7 is an insulator such as silicone resin. Note that only a portion of the electrical test wiring conductor is shown and the rest are omitted.

探針の固定はシリコン樹脂等の絶縁体で行なう。The probe is fixed with an insulator such as silicone resin.

電気テストは探針7をパッド6に立てて行なうが、探針
は経済性の面で数十枚以上のウェハーを測定する必要が
あり、機械的強度が高いこと及び耐摩耗性が高いことが
要求される為、探針の直径は数十μ〜100μφでその
先端は先細となっている。
The electrical test is carried out by placing the probe 7 on the pad 6, but the probe needs to measure several dozen wafers or more for economic reasons, and it is important that the probe has high mechanical strength and high wear resistance. As required, the diameter of the probe is several tens of microns to 100 microns, and its tip is tapered.

電気テストは半導体素子を連続して測定する為、探針と
パッドとの位置合わせ精度からパッドサイズは約100
μ である。探針の太さは機械的強度及び耐摩耗性の面
で数十μ〜100μ7必要である為、パッドのピッチは
約150μ以下にはできない。
In electrical testing, semiconductor devices are measured continuously, so the pad size is approximately 100 mm due to the alignment accuracy between the probe and the pad.
μ. Since the thickness of the probe needs to be several tens of microns to 100 microns in terms of mechanical strength and wear resistance, the pitch of the pads cannot be less than about 150 microns.

° 第2図(A)は本発明の実施例を示すものである。° FIG. 2(A) shows an embodiment of the present invention.

第2図(B)は第2図(A)に於けるA部の上平面図で
ある。
FIG. 2(B) is a top plan view of section A in FIG. 2(A).

第2図に於いて1はプローブカード基板9,9′は下層
探針、8,8′は−F層探針、5は半導体基板、6.6
.6.6  はパッド、7はシリコン樹脂等の絶縁体で
ある。探針を2層構造にするには下層探針を絶縁体で固
定した後、絶縁体上に上層探針を設置することで容易に
できる。従来のグローブカードに比べて探針が2層構造
になっている為、上層、及び下層夫々の探針配列ピッチ
は従来と同じく約150μ以上必要であるが、パッドの
ピッチはボンディング可能なピッチにすることが可能で
ある。その結果、従来の電気テスト技術及び探針サイズ
をそのまま適用しながら電極端子(パッド)のピッチを
小さくでき半導体チップのサイズを縮小することが可能
である。
In FIG. 2, 1 is the probe card board 9, 9' is the lower layer probe, 8, 8' is the -F layer probe, 5 is the semiconductor substrate, 6.6
.. 6.6 is a pad, and 7 is an insulator such as silicone resin. A two-layer structure of the probe can be easily achieved by fixing the lower probe with an insulator and then installing the upper probe on the insulator. Compared to conventional glove cards, the probe has a two-layer structure, so the probe array pitch in each of the upper and lower layers must be approximately 150μ or more, as in the past, but the pad pitch is set to a pitch that allows bonding. It is possible to do so. As a result, it is possible to reduce the pitch of the electrode terminals (pads) and reduce the size of the semiconductor chip while applying the conventional electrical test technology and probe size.

以上述べたように本発明により電極端子(パッド)の配
列ピッチの縮小を妨げていたプローブカードの探針配列
ピッチの制約が解決され、特にその効果は半導体素子の
電極端子数が増大する程著しくその工業的価値は極めて
大きい。尚本発明の実施例に於いて、半導体素子の電極
端子配列は一列であったが、本発明はこ扛に限定される
ことはなく、複数配列でもかまわない。尚本発明の実施
例に於いて、グローブカードの探針は2層構造であるが
、本発明はこれに限定されることはない。
As described above, the present invention solves the restriction on the probe arrangement pitch of a probe card, which had prevented the reduction of the arrangement pitch of electrode terminals (pads), and the effect becomes more pronounced as the number of electrode terminals of a semiconductor device increases. Its industrial value is extremely large. In the embodiments of the present invention, the electrode terminals of the semiconductor element are arranged in one row, but the present invention is not limited to this arrangement, and a plurality of electrode terminals may be arranged. In the embodiment of the present invention, the probe of the glove card has a two-layer structure, but the present invention is not limited to this.

要はグローブカードの探針が多層構造であればかまわな
い。
In short, it does not matter as long as the probe of the glove card has a multilayer structure.

【図面の簡単な説明】 第1図(A)及び(B)は従来のグローブカードを示す
図である。第2図(A)及び(B)は本発明の実施例を
示す図である。 尚図中に於いて、1・−・・・・プローブカード基板、
=6一 2・・・・・・電気テスト用配線導体、3・・・・・・
探針、4・・・・・・開孔部、5・・・・・・半導体基
板、6,6.6.6・・・・・・バンド、7・・・・・
・絶縁体、8.8’・・・・・・上層探針、9゜9′・
・・・・・下層探釦である。 ぎ5
BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1A and 1B are diagrams showing a conventional glove card. FIGS. 2(A) and 2(B) are diagrams showing an embodiment of the present invention. In the figure, 1... Probe card board,
=6-2...Wiring conductor for electrical test, 3...
Probe, 4...Aperture, 5...Semiconductor substrate, 6,6.6.6...Band, 7...
・Insulator, 8.8'... Upper layer probe, 9°9'・
...This is a lower level search button. Gi 5

Claims (1)

【特許請求の範囲】[Claims] 半導体チップより大きな開孔部を有するプローブカード
基板の一主面に設けられた電気テスト用配線導体と、開
孔部に突出し先端部が半導体チップの電極端子と相対す
る位置に設けられた探針とで構成され、かつ該探針が絶
縁体により下層探針と上層探針とに分離され、探針の一
端が電気テスト用配線導体と電気的に接続されているこ
とを特徴とする多層プローブカード。
A wiring conductor for electrical testing provided on one main surface of a probe card board having an opening larger than the semiconductor chip, and a probe protruding into the opening and provided at a position where the tip end faces the electrode terminal of the semiconductor chip. A multilayer probe comprising: a lower layer probe and an upper layer probe separated by an insulator; and one end of the probe is electrically connected to a wiring conductor for electrical testing. card.
JP541885A 1985-01-16 1985-01-16 Multilayer probe card Pending JPS61164237A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP541885A JPS61164237A (en) 1985-01-16 1985-01-16 Multilayer probe card

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP541885A JPS61164237A (en) 1985-01-16 1985-01-16 Multilayer probe card

Publications (1)

Publication Number Publication Date
JPS61164237A true JPS61164237A (en) 1986-07-24

Family

ID=11610600

Family Applications (1)

Application Number Title Priority Date Filing Date
JP541885A Pending JPS61164237A (en) 1985-01-16 1985-01-16 Multilayer probe card

Country Status (1)

Country Link
JP (1) JPS61164237A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06222079A (en) * 1993-01-22 1994-08-12 Tokyo Kasoode Kenkyusho:Kk Probe for probe card

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06222079A (en) * 1993-01-22 1994-08-12 Tokyo Kasoode Kenkyusho:Kk Probe for probe card

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