JPS61163267A - Vacuum deposition device - Google Patents

Vacuum deposition device

Info

Publication number
JPS61163267A
JPS61163267A JP327785A JP327785A JPS61163267A JP S61163267 A JPS61163267 A JP S61163267A JP 327785 A JP327785 A JP 327785A JP 327785 A JP327785 A JP 327785A JP S61163267 A JPS61163267 A JP S61163267A
Authority
JP
Japan
Prior art keywords
vapor deposition
deposition material
crucible
hole
ejection hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP327785A
Other languages
Japanese (ja)
Inventor
Eisaku Mori
森 栄作
Takashi Tsukasaki
塚崎 尚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP327785A priority Critical patent/JPS61163267A/en
Publication of JPS61163267A publication Critical patent/JPS61163267A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To coat the prescribed point on a substrate for vapor deposition by providing a shielding plate so as to face an ejection hole in a crucible thereby preventing the sticking of a bumping vapor deposition material to the ejection hole and ejecting smoothly the evaporated vapor deposition material through the ejection hole. CONSTITUTION:The arrival of the vapor deposition material melted in the crucible 1 at the ejection hole 4 of a cap 3 is prohibited by the shielding plate 6 attached to face the hole 4 via connecting bars 5 when the vapor deposition material bumps toward the hole 3 of the cap 3 as a result of the bumping of said material. The shape of the hole 4 is therefore prevented from changing and the evaporated vapor deposition material is smoothly ejected through the hole 4 into a high vacuum region by the pressure difference between the vapor pressure thereof and the pressure in the high vacuum region. The vapor deposition material is accelerated in the high vacuum region and sticks onto the prescribed point on the substrate for vapor deposition so as to coat said point.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、真空蒸着装置に関し、特に蒸着物質が入っ
たるつぼを備えた真空蒸着装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a vacuum evaporation apparatus, and more particularly to a vacuum evaporation apparatus equipped with a crucible containing a deposition substance.

〔従来の技術〕[Conventional technology]

第一図は従来の真空蒸着装置のるつぼの一例を示す断面
図であって、高真空領域内には、密閉形のるつぼ(1)
が載置されている。このるつぼ(、/)内には、蒸着物
質(図示せず)が入っている。るつぼ(1)の周囲には
、蒸着物質を加熱蒸気化するフィラメントからなる加熱
ヒータ(,2)が設けられている。るつぼ<i>のふた
(3)には、蒸気化した蒸着物質の出口となる噴出孔(
り)が形成されている。
Figure 1 is a cross-sectional view showing an example of a crucible in a conventional vacuum evaporation apparatus.
is placed. This crucible (,/) contains a vapor deposition material (not shown). A heater (2) made of a filament is provided around the crucible (1) to heat and vaporize the deposition material. The lid (3) of the crucible <i> has an ejection hole (
) is formed.

−1−記のように構成された真空蒸着装置においては、
加熱ヒータ(コ)で加熱され、溶融された蒸着物質はる
つぼ(1)内で蒸気化する。それとともに、るつぼ(1
)内と高真空領域との間には、蒸着物質の蒸気化に伴な
い圧力差が生じ、蒸気化した蒸着物質は噴出孔(りから
被蒸着基板(図示せず)に向けて噴出される。
In the vacuum evaporation apparatus configured as described in -1-,
The melted vapor deposition material is vaporized in the crucible (1) by being heated by the heater (1). Along with that, the crucible (1
) and the high vacuum region, a pressure difference occurs as the deposition material vaporizes, and the vaporized deposition material is ejected from the ejection hole (not shown) toward the substrate to be deposited (not shown). .

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

従来の真空蒸着装置は、以上のように構成されているの
で、噴出孔(りから蒸気化した蒸着物質が噴出される際
、溶融された蒸着物質が突沸して噴出孔(lI) K付
着し、噴出孔(りの口径を狭めたり、噴出孔(りの形状
を変えてしまうということが生じていた。その結果、蒸
気化した蒸着物質が、噴出孔(V)からスムースに噴出
されなかったり、被蒸着基板の所定の箇所に被覆されな
いといった問題点があった。
Since the conventional vacuum evaporation apparatus is configured as described above, when the vaporized deposition material is ejected from the ejection hole (lI), the molten vapor deposition material bumps and deposits K on the ejection hole (lI). In some cases, the diameter of the nozzle (V) was narrowed or the shape of the nozzle (V) was changed.As a result, the vaporized deposition material was not ejected smoothly from the nozzle (V). However, there was a problem that predetermined locations on the substrate to be evaporated were not coated.

この発明は、かかる問題点を解決するためになされたも
ので、突沸した蒸着物質が噴出孔に付着するのを防止す
ることのできる真空蒸着装置を得ることを目的とする。
The present invention was made to solve this problem, and an object of the present invention is to provide a vacuum evaporation apparatus that can prevent bumped evaporation substances from adhering to the ejection holes.

〔問題点を解決するだめの手段〕[Failure to solve the problem]

この発明に係る真空蒸着装置は、るつぼ内に、噴出孔と
対面してしゃへい板を設けたものである。
The vacuum evaporation apparatus according to the present invention includes a shielding plate provided in the crucible facing the ejection hole.

〔作用〕[Effect]

この発明においては、るつぼ内に溶融された蒸着物質が
噴出孔に向けて突沸しても、その途中じゃへい板により
その進路が妨げられ、蒸着物質が噴出孔に付着するよう
なことはない。
In this invention, even if the vapor deposition material melted in the crucible bumps toward the nozzle, its path is blocked by the baffle plate on the way, and the vapor deposition material does not adhere to the nozzle.

〔実施例〕〔Example〕

以下、この発明の一実施例を第1図を用いて説明する。 An embodiment of the present invention will be described below with reference to FIG.

第1図はこの発明の一実施例を示す断面図であって、第
2図と同一または相当部分は同一符号を付し、その説明
は省略する。ふた(3)には、連結棒0>を介してしや
へい板(6)が噴出孔(りと対面(−で取り付けられて
いる。この連結棒0)の長さは、蒸気が噴出孔(りから
スムースに噴出でき、かつ蒸着物質のるつぼ(1)内で
の蒸着化の妨げにならないように調節されている。なk
、このしやへい板(6)はふた(3)と一体形成されて
いてもよい。
FIG. 1 is a cross-sectional view showing one embodiment of the present invention, and the same or corresponding parts as in FIG. 2 are given the same reference numerals, and the explanation thereof will be omitted. A shield plate (6) is attached to the lid (3) via a connecting rod (0), facing the nozzle (-).The length of this connecting rod (0) is such that the steam can (It is adjusted so that it can be smoothly ejected from the crucible (1) and does not interfere with the vapor deposition of the vapor deposition material in the crucible (1).
, this cover plate (6) may be formed integrally with the lid (3).

このように構成された真空蒸着装置によれば、るつぼ(
1)内に溶融された蒸着物質の突沸現象が生じ、蒸着物
質が噴出孔(り)に向けて突沸した場合に、その蒸着物
質はしやへい板(6)に阻止され、噴出孔(弘)には到
達しない。したがって、噴出孔(4’)の形状には変化
はみられず、蒸気化した蒸着物質は、その蒸気圧と高真
空領域内の圧力との間の圧力差により噴出孔(りからス
ムースに高真空領域内に噴出される。そして、この蒸着
物質は、高真空領域内で加速されて被蒸着基板上に付着
し、被蒸着基板上には蒸着物質が被覆される。なお、し
年へい板(4)は加熱ヒータ(,2)からの熱を受けて
るつぼ(1)と同様に加熱されているので、蒸着物質は
しやへい板(6)上に付着するようなことはない。また
、しやへい板(6)はふた(3)と一体になっているの
で、ふた(3)と同時にしやへい板(6)も取り外すこ
とができ、蒸着物質をるつぼ(1)内に充填する際、良
好な作業性が得られる。
According to the vacuum evaporation apparatus configured in this way, the crucible (
1) When a bumping phenomenon of the vapor deposition material melted in the interior occurs and the vapor deposition material bumps toward the ejection hole, the vapor deposition material is blocked by the shield plate (6) and ) is not reached. Therefore, there is no change in the shape of the nozzle (4'), and the vaporized deposition material is smoothly elevated from the nozzle (4') due to the pressure difference between its vapor pressure and the pressure in the high vacuum area. The evaporation material is ejected into the vacuum region.Then, this evaporation material is accelerated in the high vacuum region and adheres to the evaporation target substrate, and the evaporation material is coated on the evaporation target substrate. (4) is heated in the same way as the crucible (1) which receives heat from the heater (2), so the vapor deposition material will not adhere to the thin plate (6). Since the shielding plate (6) is integrated with the lid (3), the shielding plate (6) can also be removed at the same time as the lid (3), allowing the deposition material to be filled into the crucible (1). When doing so, good workability can be obtained.

なお、上記実施例では高真空領域内とるつぼ(1)内と
の圧力差を用いて、被蒸着基板上に蒸着物質を付着する
ものについて説明したが、勿論これに限定されるもので
はなく、この発明は、例えば特公昭5p−qsqコ号公
報に記載されている、イオン化した蒸着物質の粒子を加
速して被蒸着基板上に照射するものについても適用でき
る。また、上記実施例では噴出孔(りはるつぼ(1)に
一箇所形成されている場合について説明したが、複数個
形成されていてもよいのは勿論である。
In addition, in the above-mentioned example, the case where the vapor deposition substance is deposited on the substrate to be vapor-deposited using the pressure difference between the inside of the high vacuum region and the inside of the crucible (1) was explained, but of course, the present invention is not limited to this. The present invention can also be applied to, for example, the method described in Japanese Patent Publication No. Sho 5P-QSQ, in which particles of ionized vapor deposition material are accelerated and irradiated onto a substrate to be vapor deposited. Further, in the above embodiment, the case where one ejection hole is formed in the crucible (1) has been described, but it goes without saying that a plurality of ejection holes may be formed.

〔発明の効果〕〔Effect of the invention〕

以上説明したようにこの発明によれば、るつぼ内に、噴
出孔と対面してしやへい板が設けられているので、溶融
した蒸着物質が突沸して噴出孔に付着することは防止さ
れ、蒸気化した蒸着物質は、噴出孔からスムースに噴出
されて被蒸着基板上の(4り 所定の箇所に被覆される。
As explained above, according to the present invention, since the shielding plate is provided in the crucible facing the nozzle, the molten vapor deposition material is prevented from bumping and adhering to the nozzle. The vaporized deposition material is smoothly ejected from the ejection hole and coats a predetermined location on the substrate to be deposited.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの発明の一実施例を示す断面図、第2図は従
来の真空蒸着装置のるつぼの一例を示す断面図である。 (1)・・るつぼ、(す・・噴出孔、(6)・・しやへ
い板。 なお、各図中、同一符号は同−又は相当部分を示す。 帛1図 1 : るつ1孟゛ 4°’W出孔 6:Lやへい板 焔2図 ム
FIG. 1 is a sectional view showing an embodiment of the present invention, and FIG. 2 is a sectional view showing an example of a crucible of a conventional vacuum evaporation apparatus. (1)... Crucible, (su...Blowout hole, (6)...Shiyahei plate. In each figure, the same reference numerals indicate the same or equivalent parts.゛4°'W outlet 6: L Yahei board flame 2 figure

Claims (1)

【特許請求の範囲】[Claims] 加熱により蒸気化した蒸着物質が入つているるつぼに、
前記蒸着物質が被蒸着基板に向けて噴出するときの出口
となる噴出孔が形成されてなる真空蒸着装置において、
前記るつぼ内に前記噴出孔と対面して配設されたしやへ
い板を備えてなることを特徴とする真空蒸着装置。
In a crucible containing a vaporized substance to be vaporized by heating,
In a vacuum evaporation apparatus in which an ejection hole is formed as an outlet when the evaporation substance is ejected toward the substrate to be evaporated,
A vacuum evaporation apparatus characterized by comprising a shield plate disposed in the crucible so as to face the ejection hole.
JP327785A 1985-01-14 1985-01-14 Vacuum deposition device Pending JPS61163267A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP327785A JPS61163267A (en) 1985-01-14 1985-01-14 Vacuum deposition device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP327785A JPS61163267A (en) 1985-01-14 1985-01-14 Vacuum deposition device

Publications (1)

Publication Number Publication Date
JPS61163267A true JPS61163267A (en) 1986-07-23

Family

ID=11552934

Family Applications (1)

Application Number Title Priority Date Filing Date
JP327785A Pending JPS61163267A (en) 1985-01-14 1985-01-14 Vacuum deposition device

Country Status (1)

Country Link
JP (1) JPS61163267A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004211110A (en) * 2002-12-26 2004-07-29 Fuji Electric Holdings Co Ltd Crucible for vapor deposition, vapor deposition system, and vapor deposition method
WO2006075401A1 (en) * 2005-01-17 2006-07-20 Youtec Co., Ltd. Evaporation source and vapor deposition apparatus
US8025733B2 (en) * 2002-07-23 2011-09-27 Samsung Mobile Display Co., Ltd. Heating crucible and deposition apparatus using the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8025733B2 (en) * 2002-07-23 2011-09-27 Samsung Mobile Display Co., Ltd. Heating crucible and deposition apparatus using the same
JP2004211110A (en) * 2002-12-26 2004-07-29 Fuji Electric Holdings Co Ltd Crucible for vapor deposition, vapor deposition system, and vapor deposition method
WO2006075401A1 (en) * 2005-01-17 2006-07-20 Youtec Co., Ltd. Evaporation source and vapor deposition apparatus
JPWO2006075401A1 (en) * 2005-01-17 2008-06-12 株式会社ユーテック Evaporation source and vapor deposition equipment
JP4909742B2 (en) * 2005-01-17 2012-04-04 株式会社ユーテック Evaporation source and vapor deposition equipment

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