JPS61155430A - Plasma treatment - Google Patents

Plasma treatment

Info

Publication number
JPS61155430A
JPS61155430A JP27433284A JP27433284A JPS61155430A JP S61155430 A JPS61155430 A JP S61155430A JP 27433284 A JP27433284 A JP 27433284A JP 27433284 A JP27433284 A JP 27433284A JP S61155430 A JPS61155430 A JP S61155430A
Authority
JP
Japan
Prior art keywords
plasma
gas
different
plasma treatment
processing chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP27433284A
Other languages
Japanese (ja)
Other versions
JPH046214B2 (en
Inventor
Junichi Kasai
純一 河西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Isuzu Motors Ltd
Original Assignee
Isuzu Motors Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Isuzu Motors Ltd filed Critical Isuzu Motors Ltd
Priority to JP27433284A priority Critical patent/JPS61155430A/en
Publication of JPS61155430A publication Critical patent/JPS61155430A/en
Publication of JPH046214B2 publication Critical patent/JPH046214B2/ja
Granted legal-status Critical Current

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  • Treatments Of Macromolecular Shaped Articles (AREA)

Abstract

PURPOSE:To give different surface modifications to respective surfaces of an object simultaneously by a simple operation, by simultaneously feeding respective different plasma gases to the respective surfaces of the object, e.g., a polymeric material. CONSTITUTION:Referring to, for example, the type where the formation of plasmas is performed outside a plasma treatment chamber, and object 15 to be treated is set in the predetermined position in the plasma treatment chamber 4 and a door 4' is shut. After valves 6, 6', 7 and 9 are shut and a valve 8 is opened, a vacuum pump 5 is operated to evacuate the plasma treatment chamber 4. After the pressure within the chamber 4 is reduced to a predetermined value, valves 6 and 6' are opened to feed different reaction gases from gas cylinders 1 and 1' to the chamber 4 and the pressure within the chamber 4 is kept ata predetermined value while generators 11 and 11' are being operated. The plasmas of the different reaction gases are fed to different surfaces of the object 15 from plasma shower pipes 14 and 14'. As said reaction gases, O2, N2, He, Ar, H2, CO, CF4, etc., can be used.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、高分子材料等の異なった表面に1夫々別異の
プラズマ処理を施こす方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for subjecting different surfaces of polymeric materials and the like to different plasma treatments.

〔従来の技術] 高分子材料等の表面改質法の一つとしてプラズマ処理を
施こす方法が知られている。
[Prior Art] A method of performing plasma treatment is known as one of the surface modification methods for polymeric materials and the like.

プラズマ処理方法は、反応ガスのプラズマ化をプラズマ
処理室内で行う方法と、プラズマ処理室外で行う方法と
の2つの方法に大別することができる。
Plasma processing methods can be roughly divided into two methods: methods in which the reaction gas is turned into plasma inside the plasma processing chamber, and methods in which the reaction gas is turned into plasma outside the plasma processing chamber.

これらのプラズマ処理方法を第8図及び第9図に基いて
説明する。
These plasma processing methods will be explained based on FIGS. 8 and 9.

第8図はガスのプラズマ化を処理室内で行うタイプの装
置を、第9図はガスのプラズマ化を処理室外で行い、プ
ラズマ化したガスを処理室内に導入するタイプの装置を
示し、夫々の装置において符号1はガスボンベ、2は減
圧弁、3は流量調整弁、4は処理室、4′は処理室のと
びら、5は真空ポンプ、6け反応ガス用バルブ、7けパ
ージ用バルブ、8け真空排気用バルブ、9けリーク用バ
ルブ、10はパツキン、11はジェネレーター、15け
被処理物を示し、第8図において12V′!コイル、第
9図において15は導波管、14はプラズマシャワー管
を示す。
Figure 8 shows a type of device that converts gas into plasma inside the processing chamber, and Figure 9 shows a type of device that converts gas into plasma outside the processing chamber and introduces the plasma gas into the processing chamber. In the apparatus, 1 is a gas cylinder, 2 is a pressure reducing valve, 3 is a flow rate adjustment valve, 4 is a processing chamber, 4' is a door of the processing chamber, 5 is a vacuum pump, 6 valves for reaction gas, 7 valves for purging, 8 vacuum exhaust valves, 9 leak valves, 10 gaskets, 11 generators, 15 objects to be processed, and in Fig. 8 12V'! In FIG. 9, 15 is a waveguide, and 14 is a plasma shower tube.

被処理物をプラズマ処理する場合、先づ被処理物15を
プラズマ処理室4の所定の位置に入れとびら4′を閉じ
ると共にバルブ6.7及び9を閉じ、バルブ8を開とし
た後真空ポンプ5をon  としプラズマ処理室内を排
気する。プラズマ処理室内が所定の圧力に達したらバル
ブ6を開き、処理室内を所定の圧力に保ちながらガスボ
ンベ1から反応ガスを供給しつ\ジェネレーター11を
on  にし、処理室内でガスをプラズマ化するか、プ
ラズマ化されたガスをプラズマシャワー管14により処
理室内に導入することくより所定の時間被処理物のプラ
ズマ化処理を行う。被処理物のプラズマ化処理が終゛つ
たらジェネレーター11をoffとし、バルブ6及び8
を閉とした後パルプ7を開として処理室内を大気圧に戻
し、とびら4′を開いて被処理物15を取り出す。
When plasma processing a workpiece, first place the workpiece 15 in a predetermined position in the plasma processing chamber 4, close the door 4' and close the valves 6, 7, and 9, open the valve 8, and then turn the vacuum on. Turn on the pump 5 to evacuate the plasma processing chamber. When the plasma processing chamber reaches a predetermined pressure, open the valve 6, supply the reaction gas from the gas cylinder 1 while maintaining the predetermined pressure inside the processing chamber, and turn on the generator 11 to turn the gas into plasma in the processing chamber, or By introducing plasma gas into the processing chamber through the plasma shower pipe 14, the object to be processed is subjected to plasma processing for a predetermined period of time. When the plasma processing of the object to be processed is completed, the generator 11 is turned off, and the valves 6 and 8 are turned off.
After closing, the pulp 7 is opened to return the inside of the processing chamber to atmospheric pressure, and the door 4' is opened to take out the object 15 to be processed.

また、プラズマ処理を行う場合、使用する反応ガス(プ
ラズマ化ガス)の種類により被処理物表面の改質効果が
異なることが知られている。
Furthermore, when plasma processing is performed, it is known that the effect of modifying the surface of the object to be processed differs depending on the type of reaction gas (plasmaization gas) used.

そして、一つの部品に対して2種類以上のガスを用いて
順次プラズマ処理を施す方法、或いは2s類以上の混合
ガスを用いてプラズマ処理をする方法も知られているが
、一つの部品の部位によるガスの種類を異圧するプラズ
マ処理に関しては、先づマスキングして第1のガスによ
るプラズマ処理を行った後肢マスキングをけがし、つい
で第1のガスによるプラズマ処理を行った部分をマスキ
ングし、t1g2のガスによるプラズマ処理を行うとい
う方法しかなく、面倒な操作を必要とする。
There are also known methods in which one part is sequentially subjected to plasma treatment using two or more types of gas, or a method in which plasma treatment is performed using a mixed gas of 2S or more. Regarding the plasma treatment using different pressures of different types of gases, first mask the hind leg masking area where the plasma treatment with the first gas was performed, then mask the part where the plasma treatment with the first gas was performed, and The only method available is to perform plasma treatment using gas, which requires complicated operations.

〔発明の目的〕[Purpose of the invention]

本発明は、プラズマ処理室に異なったガスを別々に同時
に供給することくよシ、一つの部品の部位によシ異なっ
た表面改質を行う方法を提供するものである。
The present invention provides a method for performing different surface modifications on different parts of a part by supplying different gases separately and simultaneously to a plasma processing chamber.

〔発明の構成〕[Structure of the invention]

本発明は、高分子材料等の表面をプラズマ処理する方法
において、被処理物の異なった表面に夫々別個に異なる
プラズマ化ガスを同時に供給することを特徴とする被処
理物のプラズマ処理方法である。
The present invention is a method for plasma processing a surface of a polymeric material, etc., which is characterized in that different plasma gases are simultaneously supplied to different surfaces of the object. .

以下、図面に基いて本発明方法を詳しく説明する。Hereinafter, the method of the present invention will be explained in detail based on the drawings.

第1図はガスのプラズマ化を処理室外で行なうタイプの
本発明方法を実施するための装置の概略フロー図であっ
て、符号1,1′はガスボンベ、2,2′は減圧弁、3
,3′は流量調整弁、4は処理室、4′は処理室のとび
ら、5は真空ボン7’、6.6’は反応用ガスバルブ、
7はパージ用バルブ、8け真空排気用バルブ、9はリー
ク用バルブ、10はパツキン、11.11’はジェネレ
ーター、13 、15’は導波管、14 、14’はプ
ラズマシャワー管、15は被処理物を示す。
FIG. 1 is a schematic flow diagram of an apparatus for carrying out the method of the present invention in which gas is turned into plasma outside the processing chamber, in which numerals 1 and 1' are gas cylinders, 2 and 2' are pressure reducing valves, and 3
, 3' is a flow rate adjustment valve, 4 is a processing chamber, 4' is a door of the processing chamber, 5 is a vacuum cylinder 7', 6.6' is a reaction gas valve,
7 is a purge valve, 8 vacuum exhaust valves, 9 is a leak valve, 10 is a gasket, 11.11' is a generator, 13 and 15' are waveguides, 14 and 14' are plasma shower tubes, and 15 is a Indicates the object to be processed.

該装置を用いて被処理物をプラズマ処理する方法岐、処
理装置内が所定の圧力に達した後、2つのプラズマシャ
ワー管14及び14′から異なる反応ガスを被処理物の
異なる面に供給する以外は、第9図について説明したの
と同様である。
A method of plasma processing a workpiece using the apparatus, after the inside of the processing apparatus reaches a predetermined pressure, different reaction gases are supplied to different surfaces of the workpiece from two plasma shower tubes 14 and 14'. The rest is the same as that described with reference to FIG. 9.

即ち、処理室内が所定の圧力に達した後プラズマシャワ
ー管14′からは例えば反応ガスとしてプラズマ化した
0!ガスを被処理物の上面に供給し、プラズマシャワー
管14からはプラズマ化したAr・ガスを被処理物の下
面側圧供給し、被処理物の上下両面を夫々異なるプラズ
マガスで処理するものである。
That is, after the inside of the processing chamber reaches a predetermined pressure, 0!, which is turned into plasma as a reaction gas, is emitted from the plasma shower pipe 14'. A gas is supplied to the upper surface of the object to be treated, and from the plasma shower pipe 14, Ar gas turned into plasma is supplied to the lower surface of the object to be treated, so that the upper and lower surfaces of the object to be treated are treated with different plasma gases. .

処理室内の圧力、プラズマ化ガスの流量、ジェネレータ
ーの出力、処理時間等は、処理室の大きさ、被処理物の
材質とガスの組み合わせ、或いは希望するプラズマ処理
の程度によシ適宜決定することができる。
The pressure inside the processing chamber, the flow rate of the plasma gas, the output of the generator, the processing time, etc. should be determined as appropriate depending on the size of the processing chamber, the combination of the material and gas of the object to be processed, or the desired degree of plasma processing. Can be done.

ジェネレーターの高周波としては、1五56MHzのラ
ジオ波、約2450 MHBIのマイクロ波等を使用す
ることができ、また反応ガスとしてはOMr N2* 
H@ rAr r l’hr Co r CIP4y 
CCl41PN等プラズマ処理に使用可能なあらゆるガ
スの中から適当なものを選んで使用することができる。
Radio waves of 1556 MHz, microwaves of about 2450 MHBI, etc. can be used as the high frequency of the generator, and OMr N2* can be used as the reaction gas.
H@ rAr r l'hr Cor CIP4y
An appropriate gas can be selected from among all the gases usable for plasma processing, such as CCl41PN.

又、プラス1処理室の構造は、第1図に示すようなパッ
チ方式のものに限定されず、連続処理室など、あらゆる
形態の処理室に本発明は応用可能である。
Further, the structure of the plus 1 processing chamber is not limited to the patch type one shown in FIG. 1, but the present invention is applicable to all types of processing chambers, such as a continuous processing chamber.

つぎに図面に基いて具体例を説明するが、本発明は以下
に説明する具体例に限定されるものではない。
Next, specific examples will be explained based on the drawings, but the present invention is not limited to the specific examples described below.

実施例1 第2図に示す装置を用いてポリオレフィン樹脂製燃料タ
ンクの外面はOfガスにより、内面はフッ化炭化水素系
ガスによりプラズマ処理を行った。第2図において、各
符号は第1図について説明した符号と同じ意味を有する
。処理室4にプラズマシャワー管14′が位置し、外部
に14へ 位置するようにタンクを配置【7た後、前に説明したの
と同様に処理室内を減圧し、所定の圧力に達したとき、
プラズマシャワー管14′よりフッ化炭化水素系プラズ
マガスを供給し、プラズマシャワー管14より0鵞プラ
ズマガスを供給した。その結果、タンク内面にけC−F
結合が生じ、塗装・接着等は困難忙なるが、燃料の透過
性を防止する性質が付与され、一方、タンク外面には〉
C=0結合或いは一〇〇OH結合等の極性基が形成され
、塗装・接着等の二次加工性が向上した。
Example 1 Using the apparatus shown in FIG. 2, the outer surface of a polyolefin resin fuel tank was subjected to plasma treatment with Of gas, and the inner surface was subjected to plasma treatment with fluorohydrocarbon gas. In FIG. 2, each reference numeral has the same meaning as the reference numeral explained in connection with FIG. The plasma shower pipe 14' is located in the processing chamber 4, and the tank is arranged so that it is located outside to the plasma shower pipe 14. ,
A fluorinated hydrocarbon plasma gas was supplied from the plasma shower pipe 14', and a zero plasma gas was supplied from the plasma shower pipe 14. As a result, C-F on the inside of the tank
Although bonding occurs and painting and adhesion are difficult and time-consuming, it imparts properties that prevent fuel permeability, while the outer surface of the tank
Polar groups such as C=0 bonds or 100OH bonds are formed, improving secondary processability such as painting and adhesion.

第2図に示す装置の場合、第3図及び第4図に示すよう
に1仕切り板18を設けて2種以上のガスがお互に接触
しないようにするのが好ましい。
In the case of the apparatus shown in FIG. 2, it is preferable to provide one partition plate 18 as shown in FIGS. 3 and 4 to prevent two or more types of gases from coming into contact with each other.

第4図は第3図のA−A線における断面図を示し、両図
面にかいて16は台車、17けレール、18は仕切板、
19はジヤツキ、8′は真空排気用バルブを示し、他の
符号は、M2図で説明した符号と同一意味を有し、且つ
第5図及び第4図においては処理室の部分のみの断面図
を示す。
FIG. 4 shows a cross-sectional view taken along the line A-A in FIG.
Reference numeral 19 indicates a jack, 8' indicates a vacuum exhaust valve, and the other symbols have the same meanings as those explained in Figure M2, and in Figures 5 and 4, only the processing chamber portion is shown in cross section. shows.

第3図及び第4図に示す装置を用いて被処理物のプラズ
マ処理を行う場合にけ、処理装置内に設置したレール1
7上を台車に乗せた被処理物を移動させ、タンクの開口
部と仕切り板18に設けた穴の位置があった時点で、台
車に設けたジヤツキ19を上げることにより、穴の部分
にタンクの開口部が挿入されるように夕/りを位置せし
めた後プラズマ処理を行う。
When performing plasma processing on a workpiece using the equipment shown in Figures 3 and 4, the rail 1 installed in the processing equipment
7 is placed on the trolley, and when the opening of the tank and the hole provided in the partition plate 18 are located, by raising the jack 19 provided on the trolley, the tank is placed in the hole area. Plasma treatment is performed after positioning the plate so that the opening is inserted.

板18の穴と被処理物の開口部との間の隙間は、ゴムシ
ール等によりはソ完全にシールしてもよいが、第5図に
示すように1シ一ル代18′を設け、この部分を大きく
すれば、プラズマ化したガスは隙間を通過する際忙失活
するため、完全にシールする必要はない。
The gap between the hole in the plate 18 and the opening of the object to be treated may be completely sealed with a rubber seal or the like, but as shown in FIG. If the area is made large, the plasma gas will be deactivated as it passes through the gap, so it is not necessary to completely seal it.

またプラズマ化したガスが失活する距離が判明している
場合には、プラズマ化ガスシャワー管と仕切り部との距
離を前記距離に合わせるととくより、仕切りを省略する
ことができる。
Furthermore, if the distance over which the plasma-converted gas is deactivated is known, the partition can be omitted by adjusting the distance between the plasma-converted gas shower tube and the partition to the above-mentioned distance.

また、仕切り板を設ける代りに1第6図に示すように板
状の仕切り用治具18’に被処理物15の開口部にけめ
こみうる接合部20を設けた板を開口部にはめ込んだ後
、処理室に入れるようKしてもよい。
Alternatively, instead of providing a partition plate, a plate provided with a joint 20 that can be fitted into the opening of the workpiece 15 is fitted into the opening of the plate-shaped partitioning jig 18' as shown in FIG. After that, you may enter the processing chamber.

なお、2種類のガスの混合を少くするためには、真空排
気用管とシャワー管との相対位置を工夫し各々のガスが
まざらないようなガスの流れとすることが望ましい。
In addition, in order to reduce the mixing of the two types of gases, it is desirable to devise the relative positions of the evacuation pipe and the shower pipe so that the gases flow so that the respective gases do not mix.

以上説明した方法により被処理物をプラズマ処理する場
合において、夫々のプラズマ化ガスによる処理時間が異
なる場合、一方のプラズマガスのみを長時間導入し、他
方は短時間導入するようにしてもよい。
When subjecting a workpiece to plasma treatment using the method described above, if the processing times for each plasma gas are different, only one plasma gas may be introduced for a long time and the other plasma gas may be introduced for a short time.

なお、この場合、短時間導入するプラズマガスの導入を
停止し、一方のプラズマガスのみを送り続ける場合、処
理室内の圧力が変動し、処理効果のバランスがくずれる
恐れがあるので、短時間導入するプラズマガスは、処理
が終った段階でジェネレーターのみを停止しプラズマ化
しないガスを送り続叶るのが好ましい。
In this case, if the introduction of the plasma gas that is introduced for a short time is stopped and only one plasma gas is continued to be sent, the pressure in the processing chamber may fluctuate and the balance of the processing effect may be lost. For the plasma gas, it is preferable to stop only the generator at the stage where the treatment is completed and continue to supply the gas that does not turn into plasma.

また、前記装置を使用して部分的に表面処理したい場合
、処理したい面に面した方のみにプラズマ化したガスを
導入し、処理を欲しない側にはプラズマ化してないガス
を導入することKより、処理したい面のみを効率よくプ
ラズマ処理することができる。
Also, if you want to partially treat a surface using the above device, introduce plasma gas only to the side facing the surface you want to treat, and introduce non-plasma gas to the side you don't want to treat. Therefore, only the surface to be treated can be efficiently plasma-treated.

実施例2 第7図に基いてポリ塩化ビニル製テープの表面と裏面を
夫々異なる反応ガスを用いてプラズマ処理を行う例を示
す。
Example 2 Based on FIG. 7, an example is shown in which the front and back surfaces of a polyvinyl chloride tape are subjected to plasma treatment using different reaction gases, respectively.

第7図において符号15′はポリ塩化ビニル製チー7’
、21はポリ塩化ビニル製テープの供給口−ル、22は
同巻取りロールを示1/、他の符号は第2図で説明した
符号と同じ意味を有する。
In FIG. 7, reference numeral 15' indicates a polyvinyl chloride tee 7'.
, 21 is a supply port for the polyvinyl chloride tape, 22 is a take-up roll, and other symbols have the same meanings as those explained in FIG.

処理室が所定の圧力に減圧された場合、ポリ塩化ビニル
テープを一定の速度で供給しながらプラズマシャワー管
14から有機けい素化合物例えばビニルトリメトキシシ
ラン又はこれとアンモニア又は希ガスとの混合プラズマ
ガスを供給し、一方、プラズマシャワー管14′から0
.プラズマガスを供給して、ポリ塩化ビニルテープの表
面と裏面とを異なるガスでプラズマ処理し、巻取りテー
プに巻取った。表面には耐汚染性並びに帯電防止性が付
与され、裏面(0鵞ガスで処理した面)は接着剤との接
着力が向上した。従って裏面に接着剤層または粘着剤層
を設けて接着テープとすることができる。
When the processing chamber is reduced to a predetermined pressure, an organosilicon compound such as vinyltrimethoxysilane or a mixed plasma gas of this with ammonia or a rare gas is supplied from the plasma shower pipe 14 while supplying the polyvinyl chloride tape at a constant rate. 0 from the plasma shower pipe 14'.
.. Plasma gas was supplied to perform plasma treatment on the front and back surfaces of the polyvinyl chloride tape with different gases, and the tape was wound up into a roll-up tape. The surface was given stain resistance and antistatic properties, and the back surface (the surface treated with zero gas) had improved adhesive strength with the adhesive. Therefore, an adhesive layer or a pressure-sensitive adhesive layer can be provided on the back side to form an adhesive tape.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図、第2図、第5図、及び第7図は本発明方法を説
明するための概略図、第4図は第3図のA−A線におけ
る断面図、第5図及び第6図は仕切板と開口部の接合状
態を示す図、第8図及び第9図は従来方法を説明するた
めの図である。
1, 2, 5, and 7 are schematic diagrams for explaining the method of the present invention, FIG. 4 is a sectional view taken along line A-A in FIG. 3, and FIGS. The figure shows the state of connection between the partition plate and the opening, and FIGS. 8 and 9 are diagrams for explaining the conventional method.

Claims (1)

【特許請求の範囲】[Claims] 1、高分子材料等の表面をプラズマ処理する方法におい
て、被処理物の異なつた表面に夫々別個に異なるプラズ
マ化ガスを同時に供給することを特徴とする被処理物の
プラズマ処理方法。
1. A method for plasma treatment of a surface of a polymeric material or the like, characterized in that different plasma gases are simultaneously supplied to different surfaces of the object.
JP27433284A 1984-12-28 1984-12-28 Plasma treatment Granted JPS61155430A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27433284A JPS61155430A (en) 1984-12-28 1984-12-28 Plasma treatment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27433284A JPS61155430A (en) 1984-12-28 1984-12-28 Plasma treatment

Publications (2)

Publication Number Publication Date
JPS61155430A true JPS61155430A (en) 1986-07-15
JPH046214B2 JPH046214B2 (en) 1992-02-05

Family

ID=17540177

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27433284A Granted JPS61155430A (en) 1984-12-28 1984-12-28 Plasma treatment

Country Status (1)

Country Link
JP (1) JPS61155430A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10310652A (en) * 1997-05-14 1998-11-24 Toppan Printing Co Ltd Surface treatment method, object treated thereby, and surface treatment apparatus
JP2008547166A (en) * 2005-06-24 2008-12-25 ソフタル エレクトロニック エリック ブルーメンフェルト ゲーエムベーハ− ウント コー カーゲー A method of continuously plasma-treating and / or plasma-coating a product, particularly a plate or bar, at atmospheric pressure
JP2016129138A (en) * 2016-01-22 2016-07-14 沖野 晃俊 Plasma processing device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS515869A (en) * 1974-07-02 1976-01-19 Torao Tobisu Ekitaino seidenjokasochi
JPS59126437A (en) * 1983-01-07 1984-07-21 Unitika Ltd Low-temperature plasma treatment of sheet

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS515869A (en) * 1974-07-02 1976-01-19 Torao Tobisu Ekitaino seidenjokasochi
JPS59126437A (en) * 1983-01-07 1984-07-21 Unitika Ltd Low-temperature plasma treatment of sheet

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10310652A (en) * 1997-05-14 1998-11-24 Toppan Printing Co Ltd Surface treatment method, object treated thereby, and surface treatment apparatus
JP2008547166A (en) * 2005-06-24 2008-12-25 ソフタル エレクトロニック エリック ブルーメンフェルト ゲーエムベーハ− ウント コー カーゲー A method of continuously plasma-treating and / or plasma-coating a product, particularly a plate or bar, at atmospheric pressure
JP2016129138A (en) * 2016-01-22 2016-07-14 沖野 晃俊 Plasma processing device

Also Published As

Publication number Publication date
JPH046214B2 (en) 1992-02-05

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