JPS61152023A - Processor - Google Patents

Abstract

PURPOSE: make processing performance even by a method wherein, within the wafer processing to produce a semiconductor device, both spreading process and heat treatment of solution are continuously performed. CONSTITUTION:A wafer 2 is rotated by a spinner 1 while specified amount of solution is dripped on the wafer 2 from an end of a dripping nozzle 4 located on the position above central part of wafer 2 to be spread on overall surface by centrifugal force. Next the wafer located on the spinner 1 below a clamp heating mechanism 7 is heated up to specified temperature within a short time by heat energy of the lamp heating mechanism 7 to dry up and heat-treat the solution spread on the wafer 2. Through these procedures, the left time of solution spread wafer 2 until the heat treatment thereof may be shortened since the spreading process of solution of wafer 2 and the heat treatment of solution are performed continuously. Besides, any quality dispersion of film such as oxide film formed on the wafer 2 due to any change in the solution spread on wafer 2 during the left time may be prevented from occurring to make the process performance even.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to processing technology, particularly to a technology that is effective when applied to a process of forming a predetermined thin film on a wafer surface in wafer processing in the manufacture of semiconductor devices.

[Background Art] In the manufacturing of semiconductor devices, in order to form predetermined semiconductor elements on a disk-shaped substrate, that is, a wafer, made of a semiconductor such as silicon, a predetermined thin film made of a metal or an insulator is coated over the entire surface of the wafer. After forming, a predetermined pattern is formed by photoetching.

In particular, in so-called multilayer wiring technology, which increases the degree of freedom in wiring by sequentially overlapping metal wiring and insulating films without reducing the degree of integration of semiconductor elements, chemical When an insulating film is directly deposited using a phase growth method or the like, the unevenness of the wiring structure that has already been formed will cause a steep step in the insulating film deposited on top of the insulating film. When forming a wiring structure that crosses an already formed wiring structure, this may cause disconnection or insulation failure.

For this reason, before forming a predetermined insulating film by chemical vapor deposition, etc., a solution of an organic silicon compound dissolved in a solvent such as alcohol is applied onto the already formed wiring structure on the wafer surface. However, it is conceivable to form a hard silicon oxide film by subsequently inserting a predetermined number of wafers into a heating furnace made of a resistance heating element or the like and heat-treating them.

In this case, the applied solution adheres more to the stepped portions of the wiring structure due to surface tension, so that the unevenness of the wiring structure is alleviated and the above-mentioned disadvantages are eliminated.

However, in the application and heat treatment of the organosilicon solution as described above, due to the volatilization of organic solvents such as alcohol and the unstable nature of organosilicon at room temperature, the length of time between application of the solution and heat treatment may be affected. The inventors of the present invention have found that there are disadvantages such as differences in the modification formed on each wafer depending on the method, a long time required to raise the temperature to a predetermined heating temperature, and poor productivity.

In addition, as a document explaining the film forming technology by applying a solution and heat treatment, there is % Formula % [Electronic Materials J, 1982 Special Issue, P69 to P74.

[Object of the Invention] An object of the present invention is to provide a processing technique that can obtain uniform processing results and has good productivity.

The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

[Summary of the Invention] A brief overview of typical inventions disclosed in this application is as follows.

That is, by providing an application section that performs coating by dropping a solution onto a rotating workpiece, and a heating section that is constituted by a lamp heating mechanism and sequentially heat-processes the workpiece coated with the solution, Application of the solution and heat treatment are performed continuously to shorten the standing time from application of the solution to heat treatment, and to prevent variations in processing results caused by long or short standing times. This makes it possible to perform heat treatment at a rapid temperature increase, thereby achieving uniform treatment results and good productivity.

[Embodiment 1] FIG. 1 is a partially cutaway perspective view of a wafer processing apparatus which is an embodiment of the present invention.

A wafer 2 (workpiece) is removably fixed onto a rotatable spinner 1 (coating section) by, for example, vacuum suction, and is configured to rotate together with the spinner 1.

This spinner 1 is connected to, for example, a motor (not shown) via a drive shaft 3, and is configured to rotate at a predetermined speed.

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The tip of the dropping nozzle 4 is positioned above the 71%++ part of the JllJ-J--r-2, and the tip of the dropping nozzle 4 is placed on top of the rotated wafer 2. A predetermined amount of a solution (not shown) formed by dissolving in is dropped.

The dripping nozzle 4 is configured to be rotatable in a plane parallel to the plane on which the wafer 2 is positioned, and the wafer 2 after the solution application operation is placed in a fork shape such that the wafer 2 can be moved freely below the spinner 1. When the lower surface of the wafer 2 is supported by the transport mechanism 5 and the wafer 2 is moved to the heating table 6 (heating section) arranged near the spinner 1 in series with the spinner 1, the tip of the dripping nozzle 4 touches the wafer 2. It is configured to be evacuated from above.

Above the heating table 6, a filament made of tungsten or the like and a predetermined gas are sealed in a quartz tube to have a relatively small heat capacity. A lamp heating mechanism 7 capable of heating is provided, and the wafer 2 coated with the solution is rapidly heated to a predetermined temperature by being positioned below the lamp heating mechanism 7.

Furthermore, a lamp shade 8 is provided at a position that covers the upper part of the lamp heating mechanism 7, and the light beams emitted from the lamp heating mechanism 7 are reflected downward to the wafer 2 located below the lamp heating mechanism 7. The structure is such that the thermal energy generated in the lamp heating mechanism 7 can be applied efficiently.

Next, the operation of this embodiment will be explained.

First, the drip nozzle 4 is rotated and retracted from above the spinner 1.

Next, the transport mechanism 5 on which the wafer 2 is placed is moved directly above the spinner 1 in a loader section (not shown) where the unprocessed wafer 2 is placed, and then lowered and placed on the transport mechanism 5. The placed wafer 2 is transferred onto a spinner 1 and fixed by vacuum suction.

At this time, the transport mechanism 5 that has transported the wafer 2 has a spinner l
It is moved below and placed in a standby state.

Next, the dripping nozzle 4 is rotated so that its tip is positioned above the center of the wafer 2 placed on the spinner l.

Next, the wafer 2 is rotated together with the spinner 1 rotated by a motor via the drive shaft 3, and from the tip of the dropping nozzle 4 positioned above the center of the wafer 2, the center of the wafer 2 being rotated is A predetermined amount of solution is dropped into the container.

In this case, a predetermined amount of the solution dropped onto the center of the rotated wafer 2 is uniformly dispersed and applied over the entire surface of the wafer 12 by centrifugal force, and a liquid is formed on the wafer 2.
For example, it is distributed so as to flatten uneven portions caused by wiring structures or the like.

Next, the rotation of the wafer 2 fixed to the spinner 1 is stopped, and the dripping nozzle 4 is rotated by a predetermined angle.
It is evacuated from above Ueno X2 fixed to spinner 1.

Next, after the fixation of the wafer 2 to the spinner l by vacuum suction is released, the transport mechanism 5 that was waiting under the spinner l is raised, and the wafer 12 is removed from the top of the spinner 1 and transferred to the transport mechanism 5. It is assumed to be in a placed state.

Next, the transport mechanism 5 on which the wafer 2 is placed is moved in the horizontal direction, and the wafer 2 is quickly transported directly above the heat treatment table 6 arranged in series near the spinner 1.

Next, the transport mechanism 5 on which the wafer 2 is placed is lowered, and the wafer 2 is positioned on the heat treatment table 6.

At this time, the transport mechanism 5 that has transported the wafer 2 to the heat treatment table 6 is placed on standby below the wafer 2 placed on the heat treatment table 6 .

Next, power supply to the lamp heating mechanism 7 provided above the heat treatment table 6 is started, and the lamp heating mechanism 7 quickly reaches a predetermined heating temperature. The wafer 2 placed above is heated to a predetermined temperature in a short time by the thermal energy of the lamp heating mechanism 7, and the solution applied to the wafer 2 is dried and heat-treated to form a hard, for example, silicon oxide film. .

In this case, since the application of the solution to the wafer 2 and the heat treatment are performed continuously, the leaving time of the wafer 2 coated with the solution until the heat treatment is shortened, and the time during which the solution applied to the wafer 2 is left is shortened. Variations in film quality such as the silicon oxide film formed on the wafer 2 due to changes are prevented, and uniform processing results can be obtained.

Furthermore, the lamp heating mechanism 7 can quickly raise the temperature to a predetermined heat treatment temperature, reducing the time required for treatment and improving productivity.

After a predetermined period of time has elapsed, the power supply to the lamp heating mechanism 7 is stopped, the transport mechanism 5 which is waiting below the wafer 2 placed on the heating processing table 6 is raised, and the wafer 2 is placed on the transport mechanism 5. Then, it is transported to an unloader section (not shown), stored in a predetermined transport jig, etc., and sent to another predetermined process.

By continuously repeating the above series of operations, a process of forming silicon oxide films of uniform quality on a large number of wafers 2 can be performed with good productivity.

[Embodiment 2] FIG. 2 is a sectional view of a wafer processing apparatus which is another embodiment of the present invention.

In the second embodiment, the lamp heating mechanism 7
This embodiment differs from the first embodiment in that the spinner 1 is provided directly above the spinner 1, which is removably fixed by vacuum suction and rotated to apply the solution.

That is, a cavity 9 opened at the upper surface of the spinner 1 is formed inside the spinner 1, and a predetermined vacuum source (not shown) is provided inside the spinner 1.
The wafer 2 positioned on the upper surface of the spinner 1 is vacuum-adsorbed by being connected to the spinner 1 .

Furthermore, above the wafer 2 fixed to the spinner 1, a drip nozzle 4 is provided rotatably within a plane parallel to the wafer 2.

A shutter mechanism 1O is provided below the lamp heating mechanism 7 provided above the spinner 1 so as to be movable in the horizontal direction, so that droplets of the solution applied to the wafer 2 are prevented from adhering to the lamp heating mechanism 7. configured to be prevented.

Next, the operation of this embodiment will be explained.

First, the drip nozzle 4 is rotated and retracted from above the spinner 1.

Next, the wafer 2 placed on the transport mechanism 5 and transported from outside the apparatus is placed on the spinner 1, and the wafer 2 is vacuum-adsorbed onto the upper surface of the spinner 1.

The transport mechanism 5 is placed on standby below the spinner I.

Thereafter, the dripping nozzle 4 is rotated so that its tip is positioned above the center of the wafer 2 fixed to the spinner 1.

Next, the wafer 2 is rotated by the spinner 1, and a predetermined amount of solution is dropped onto the wafer 12 from the tip of the dropping nozzle 4 located above the center of the wafer 2, and is applied over the entire surface of the wafer 2 by centrifugal force. be done.

Next, the rotation of the wafer 2 fixed to the spinner 1 is stopped, and the drip nozzle 4 is rotated and retracted from above the wafer 2.

Next, the shutter mechanism IO is moved horizontally and opened, and the lamp heating mechanism 7 is exposed to the Ueno X2, and electricity is started to be supplied to the lamp heating mechanism 7, so that the lamp heating mechanism 7 quickly reaches a predetermined level. The wafer 2 which has reached the heating temperature and is placed on the spinner l below the lamp heating mechanism 7
is heated to a predetermined temperature in a short time by the thermal energy of the lamp heating mechanism 7, and the solution applied to the wafer 2 is dried and heat-treated to form a hard, for example, silicon oxide film.

In this way, since the application of the solution to the wafer 2 and the heat treatment are performed continuously, the wafer 2 coated with the solution
Due to changes in the solution applied to the wafer 2 during the standing time, the wafer 2
This prevents variations in the film quality of the silicon oxide film and the like formed on the substrate, and provides uniform processing results.

Furthermore, the lamp heating mechanism 7 can quickly raise the temperature to a predetermined heat treatment temperature, reducing the time required for treatment and improving productivity.

After a predetermined period of time has elapsed, the lamp heating mechanism 7 is de-energized and the shutter mechanism 10 is closed.

At the same time, the fixed state of the wafer 2 placed on the spinner 1r is released, and the transfer mechanism 5 that is waiting under the spinner 1 is raised, and the wafer 2 that was placed on the spinner 1 is lifted. It is placed on a conveyance mechanism, moved, and stored in an external storage jig (not shown), for example.

By continuously repeating the above series of operations, a process of forming silicon oxide films of uniform quality on a large number of wafers 2 can be performed with good productivity.

[Effects] (l) Consists of an application section that performs application by dropping a solution onto a workpiece that is rotated zero, and a lamp heating mechanism,
Since the application section is equipped with a heating section that sequentially heats the object to be treated with the solution applied, it is possible to perform solution application and heat treatment continuously, and the process from application of the solution to heat treatment can be performed continuously. As a result of shortening the standing time, variations in processing results due to long or short standing times are prevented, and uniform processing results can be obtained.

(2) Since the heating section is constituted by a lamp heating mechanism, the temperature in the heating section can be quickly raised to a predetermined temperature, and the time required for heat treatment can be shortened.

(3), above +11. As a result of +2), productivity in the treatment process is improved.

Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Nor.

For example, the conveyance mechanism can also be configured with a belt conveyor or the like.

[Field of Application] In the above explanation, the invention made by the present inventor was mainly applied to the application field of wafer processing technology, which is the background of the invention, but it is not limited thereto. It can be widely applied to technologies that require solution application and heat treatment.

[Brief explanation of the drawing]

FIG. 1 is a partially cutaway perspective view of a wafer processing apparatus according to an embodiment of the present invention, and FIG. 2 is a sectional view of a wafer processing apparatus according to another embodiment of the present invention. l... Spinner (WJ fabric part), 2... Wafer (workpiece), 3... Drive shaft, 4... Dripping nozzle, 5...
Transport mechanism, 6... Heat treatment table (heating section), 7... Lamp heating mechanism, 8... Lamp shade, 9... Cavity, lO... Shutter mechanism.

Claims (1)

[Scope of Claims] 1. Comprised of a coating section that performs coating by dropping a solution onto a rotating workpiece, and a lamp heating mechanism, the workpiece coated with the solution is successively heated in the coating section. A processing device comprising a heating section for processing. 2. The processing apparatus according to claim 1, wherein the application section and the heating section are arranged in series. 3. The processing apparatus according to claim 1, characterized in that a heating section is provided directly above the application section. 4. The processing apparatus according to claim 1, wherein the object to be processed is a wafer. 5. The processing apparatus according to claim 1, wherein the solution is a solution formed by dissolving an organic silicon compound in a predetermined solvent.