JPS61148814A - Heat treatment device - Google Patents

Heat treatment device

Info

Publication number
JPS61148814A
JPS61148814A JP27082984A JP27082984A JPS61148814A JP S61148814 A JPS61148814 A JP S61148814A JP 27082984 A JP27082984 A JP 27082984A JP 27082984 A JP27082984 A JP 27082984A JP S61148814 A JPS61148814 A JP S61148814A
Authority
JP
Japan
Prior art keywords
processing chamber
predetermined
temperature
heating
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP27082984A
Other languages
Japanese (ja)
Inventor
Masakuni Akiba
秋葉　政邦
Hiroyuki Shida
啓之 志田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP27082984A priority Critical patent/JPS61148814A/en
Publication of JPS61148814A publication Critical patent/JPS61148814A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To speedily increase temperature up to a predetermined processing temperature, to stably maintain the predetermined temperature and to improve productivity in heat treatment of an object to be processed by using at least two kinds of heating means for heating the object to be processed positioned in a processing chamber. CONSTITUTION:At least two kinds of heating methods 7 and 8 for heating an object 3 to be processed positioned in a processing chamber 1 are provided. For instance, a boat 2 is disconnectably positioned inside the processing chamber 1, and a predetermined quantity of the object 3 to be processed is positioned in a upright state in a predetermined space in the boat 2. A reaction gas supply pipe 4 and an exhaust pipe 5 are connected with the upper portion of facing fluid end in the processing chamber 1, and a predetermined reaction gas is flown in the processing chamber 1. Plural infrared-ray lamp heaters 7 are provided in parallel with a direction of length of the processing chamber 1. A tubulous resistance heating heater 8 whose both ends are closed is provided in a state in which the infrared-ray lamp heaters 7a arranged in the processing chamber 1 and in a periphery of this processing chamber 1 are accommodated.

Description

【発明の詳細な説明】 ［技術分野］ 本発明は、加熱処理技術、特に、半導体装置の製造にお
けるウェハ処理工程に用いて有効な技術に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a heat treatment technique, particularly to a technique effective for use in a wafer processing step in the manufacture of semiconductor devices.

［背景技術１ 半導体装置の製造においては、たとえばシリコンなどの
半導体からなる円盤状の基板、ずなわちウェハに所定の
半導体素子を形成する過程で、ウェハの表面に、たとえ
ば酸化膜などの薄膜を形成することが行われる。[Background Art 1] In the manufacture of semiconductor devices, a thin film such as an oxide film is coated on the surface of the wafer in the process of forming a predetermined semiconductor element on a disk-shaped substrate, that is, a wafer, made of a semiconductor such as silicon. Forming is done.

すなわち、所定数量のウェハを処理室内に位置させ、処
理室の周囲に設けられた加熱手段によって所定の温度に
維持し、処理室内に所定の反応ガスなどを供給しつつ所
定の時間保持することにより、ウェハに所定の厚さの薄
膜を形成させるものである。That is, a predetermined number of wafers are placed in a processing chamber, maintained at a predetermined temperature by heating means provided around the processing chamber, and held for a predetermined time while supplying a predetermined reaction gas etc. into the processing chamber. , a thin film of a predetermined thickness is formed on a wafer.

この場合、たとえば膜厚などの均一な処理結果を得るた
めには、処理室を所定の温度に安定に維持することが重
要であり、加熱手段としては、比較的熱容量の大きい、
たとえば抵抗加熱ヒータを用いることが考えられる。In this case, in order to obtain uniform processing results such as film thickness, it is important to stably maintain the processing chamber at a predetermined temperature.
For example, it is conceivable to use a resistance heater.

しかしながら、熱容量の比較的大きな加熱手段では、温
度を所定値に安定に維持するためには好都合ではあるが
、処理室内へのウェハの出し入れに伴う加熱停止および
処理室の開放操作によって低下された処理室および加熱
手段自身の温度を、処理の再開のため所定の温度まで再
び昇温させる操作に長時間を要することとなり、ウェハ
処理工程の生産性の低下の原因となっていることを本発
明者は見いだした。However, although heating means with a relatively large heat capacity is convenient for stably maintaining the temperature at a predetermined value, processing performance is degraded due to stopping of heating and opening of the processing chamber when wafers are taken in and out of the processing chamber. The inventor has discovered that it takes a long time to raise the temperature of the chamber and the heating means itself to a predetermined temperature again in order to resume processing, which causes a decrease in productivity in the wafer processing process. I found it.

上記のような生産性の低下は、処理されるウェハの大口
径化に伴う加熱処理装置の大型化によってさらに顕著と
なる。The decrease in productivity as described above becomes even more remarkable as the size of the heat treatment apparatus increases as the diameter of the wafers to be processed increases.

なお、ウェハの加熱処理技術について説明されている文
献としては、株式会社工業調査会、昭和５６年１１月ｌ
Ｏ日発行［電子材料Ｊ’１９８２年１１月号別冊、Ｐ６
９〜Ｐ７４がある。The literature explaining the wafer heat treatment technology is Kogyo Kenkyukai Co., Ltd., November 1981.
Published on the 0th [Electronic Materials J' November 1982 issue, special issue, P6
There are 9 to P74.

［発明の目的］ 本発明の目的は、生産性の良好な加熱処理技術を提供す
ることにある。[Object of the Invention] An object of the present invention is to provide a heat treatment technique with good productivity.

本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
。The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

［発明の概要］ 本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、つぎの通りである。[Summary of the Invention] A brief overview of typical inventions disclosed in this application is as follows.

すなわち、処理室内に位置される被処理物を加熱する加
熱手段を少なくとも２種類設けることによって、所定の
処理温度まで迅速に昇温させるとともに処理温度を安定
に維持することを可能にして、昇温操作に要する時間を
短縮することにより、加熱処理の生産性を向上させたも
のである。That is, by providing at least two types of heating means for heating the workpiece located in the processing chamber, it is possible to quickly raise the temperature to a predetermined processing temperature and to maintain the processing temperature stably. This improves the productivity of heat treatment by shortening the time required for the operation.

［実施例］ 第１図（ａ）は本発明の一実施例であるウェハの加熱処
理装置の軸方向を一部省略して示す断面図、同図（ｂ）
は同図（ａ）において線Ｂ−Ｂで示される部分の断面図
である。[Example] Fig. 1(a) is a sectional view showing a wafer heat treatment apparatus according to an embodiment of the present invention, with the axial direction partially omitted, and Fig. 1(b)
is a cross-sectional view of a portion indicated by line BB in FIG.

処理室１の内部にはボート２が着脱自在に位置され、こ
のボート２に所定の数量のウェハ３（被　、処理物）が
所定の間隔で直立状態に位置されるように構成されてい
る。A boat 2 is removably placed inside the processing chamber 1, and a predetermined number of wafers 3 (to be processed) are placed upright on the boat 2 at predetermined intervals.

さらに、処理室１の対向する両端面上部には、反応ガス
供給パイプ４および排気パイプ５がそれぞれ接続され、
処理室ｌ内に所定の反応ガスが流通される構造とされて
いる。Further, a reaction gas supply pipe 4 and an exhaust pipe 5 are connected to the upper portions of both opposing end surfaces of the processing chamber 1, respectively.
The structure is such that a predetermined reaction gas is circulated within the processing chamber l.

また、処理室１には水平方向に全周にわたってフランジ
部６が形成され、このフランジ部６において上下方向に
開閉自在に構成され、処理室１内へのウェハ゛３の挿入
および取り出し操作が行われる構造とされている。Further, a flange portion 6 is formed in the processing chamber 1 over the entire circumference in the horizontal direction, and the flange portion 6 is configured to be openable and closable in the vertical direction, and operations for inserting and removing the wafer 3 into the processing chamber 1 are performed. It is said to be a structure.

上記のように構成される処理室ｌの周囲には、複数の赤
外線ランプヒータ７′（加熱手段）が処理室１の長さ方
向に平行に設けられている。　　−この赤外線ランプヒ
ータ７は、たとえば石英管内にタングステンなどからな
るフィラメント（図示せず）を封入する構造として熱容
量が比較的小さくなるように構成され、フィラメントに
通電することによって迅速な昇温及可能なものである。A plurality of infrared lamp heaters 7' (heating means) are provided in parallel to the length direction of the processing chamber 1 around the processing chamber 1 configured as described above. - This infrared lamp heater 7 has a structure in which a filament (not shown) made of tungsten or the like is enclosed in a quartz tube, so that its heat capacity is relatively small, and it can quickly raise the temperature by energizing the filament. It is something.

さらに、処理室ｌおよびこの処理室ｌの周囲゛に配設さ
れ元赤外線ランプヒータ７を内部に収容する状態に、両
端部が閉止された筒状の抵抗加熱ヒータ８゛（加熱手段
）が設けら□れ、処理室ｌのフランジ部６において処理
室ｌが分割されて開放される際に、処理室１と同時に上
下方向に置割可能にされている。　　　　゛　□ この抵抗加熱ヒータ８は、たとえば電気抵抗発熱体（図
示せず）を比較的熱容量の大表絶縁物に埋設して構成さ
れ、電気抵抗発熱体に通電することによって所定の温度
に昇温され、所定の温度に到達した後は比較的熱容量の
大な絶縁物によって温度が委定に維持されるものである
。Further, a cylindrical resistance heater 8' (heating means) with both ends closed is provided in the processing chamber 1 and around the processing chamber 1, and in a state where the former infrared lamp heater 7 is accommodated therein. Therefore, when the processing chamber 1 is divided and opened at the flange portion 6 of the processing chamber 1, it can be placed vertically at the same time as the processing chamber 1.゛ □ This resistance heater 8 is constructed by, for example, embedding an electric resistance heating element (not shown) in an insulator with a relatively large heat capacity, and raises the temperature to a predetermined temperature by supplying electricity to the electric resistance heating element. After reaching a predetermined temperature, the temperature is maintained at a certain level by an insulator with a relatively large heat capacity.

次に、□本実□施例の作用について説明する。Next, the operation of this embodiment will be explained.

始めに、処理室１は開放され、所定の数量のウェハ３が
所定の間隔で直立状態に位置されたボート２が処理室１
内に挿入される。First, the processing chamber 1 is opened, and the boat 2 on which a predetermined number of wafers 3 are placed upright at predetermined intervals is placed inside the processing chamber 1.
inserted within.

次に、処理室ｌは閉止され、赤外線ランプヒータ７およ
び抵抗加熱ヒータ８に通電されて、加熱膳作が開始され
る。Next, the processing chamber 1 is closed, the infrared lamp heater 7 and the resistance heater 8 are energized, and cooking begins.

この場合、赤外線ランプヒータ７は迅速に昇、温され、
比較的熱容量の大な抵抗加熱ヒータ８は、抵抗加熱ヒー
タ８自体の発熱と、熱容量が抵抗加熱ヒータ８よりも比
較的小さく、昇温速度のより大な赤外線加熱ヒータ７に
よって加熱されるために短時間で所定の温度に到達され
る。In this case, the infrared lamp heater 7 is quickly raised and heated,
The resistance heater 8, which has a relatively large heat capacity, is heated by the heat generated by the resistance heater 8 itself and by the infrared heater 7, which has a relatively smaller heat capacity than the resistance heater 8 and has a higher temperature increase rate. A predetermined temperature is reached in a short time.

抵抗加熱ヒータ８が所定の温度にされたのち赤外線ラン
プヒータ７への通電は停止され、比較的熱容量の大な抵
抗加熱ヒータ８によって、装置内は所定の温度に安定に
保持される。After the resistance heater 8 is brought to a predetermined temperature, the power supply to the infrared lamp heater 7 is stopped, and the inside of the apparatus is stably maintained at a predetermined temperature by the resistance heater 8 having a relatively large heat capacity.

このように、異なる２種類の加熱手段が設けられている
ため、所定温度までの迅速な昇温および所定の加熱温度
の安定な維持が可能となり、加熱処理に要する時間が短
縮される結果、処理の生産性が向上される。In this way, since two different types of heating means are provided, it is possible to quickly raise the temperature to a predetermined temperature and to stably maintain the predetermined heating temperature, which shortens the time required for heat treatment. productivity will be improved.

次に、排気パイプ５を通じて処理室Ｉ内の排気が行われ
つつ、たとえばモノシラン（ＳｉＨ，）および酸素（０
□）などの処理ガスが反応ガス供給パイプ４を通じて処
理室ｌ内に供給され、ウェハ３の表面には、たとえばシ
リコン酸化膜などの所定の薄膜が形成される。Next, while exhausting the inside of the processing chamber I through the exhaust pipe 5, for example, monosilane (SiH,) and oxygen (0
A processing gas such as □) is supplied into the processing chamber l through the reaction gas supply pipe 4, and a predetermined thin film such as a silicon oxide film is formed on the surface of the wafer 3.

所定の時間経過後、処理室ｌ内への処理ガスの供給およ
び加熱操作は停止され、処理室１は開放されて、所定の
薄膜が形成されたウェハ３は外部に取り出される。After a predetermined period of time has elapsed, the supply of processing gas into the processing chamber 1 and the heating operation are stopped, the processing chamber 1 is opened, and the wafer 3 on which a predetermined thin film has been formed is taken out.

上記の一連の操作を繰り返すことによって、多数のうエ
バ３の、たとえば膜形成処理が行われる。By repeating the above series of operations, a large number of cavities 3, for example, are subjected to film formation processing.

また、未処理のウェハ３が処理室１内に挿入され、処理
室１が閉止されて、再び膜形成処理が開取り出す操作の
際に処理室１および加熱手段などの温度が低下されるこ
とは避けられず、装置は所定のたとえば膜形成温度より
も低い状態とされているが、上述の如く加熱操作の初期
に、迅速な昇温が可能な赤外線ランプヒータ７を抵抗加
熱ヒータ８と同時に稼働させることによって所定の温度
まで短時間に昇温され、所定の温度に到達された後には
比較的熱容量の大な抵抗加熱ヒータ８によって所定の温
度に安定に維持されるため、ウェハ３は効率良く加熱処
理される。Further, when an unprocessed wafer 3 is inserted into the processing chamber 1, the processing chamber 1 is closed, and the film forming process is opened and taken out again, the temperature of the processing chamber 1 and the heating means etc. will not be lowered. Unavoidably, the temperature of the device is lower than a predetermined film forming temperature, but as mentioned above, at the beginning of the heating operation, the infrared lamp heater 7, which can quickly raise the temperature, is operated simultaneously with the resistance heater 8. The wafer 3 is heated to a predetermined temperature in a short time by heating the wafer 3, and after reaching the predetermined temperature, it is stably maintained at the predetermined temperature by the resistance heater 8 having a relatively large heat capacity. Heat treated.

このように、異なる加熱手段を設けることによって、間
歇的に繰り返される加熱処理サイクルが短縮化され加熱
処理の生産性が向上される。In this way, by providing different heating means, the intermittently repeated heat treatment cycle is shortened and the productivity of the heat treatment is improved.

［効果］ （１）、処理室内に位置される被処理物を加熱する加熱
手段が少なくとも２種類設けられているため、所定の処
理温度までの迅速な昇温および所定の温度の安定な維持
が可能となり、昇温操作に要する時間が短縮される結果
、被処理物の加熱処理における生産性が向上される。[Effects] (1) Since at least two types of heating means are provided for heating the workpiece located in the processing chamber, the temperature can be quickly raised to a predetermined processing temperature and the predetermined temperature can be stably maintained. As a result, the time required for the temperature raising operation is shortened, and as a result, the productivity in the heat treatment of the object to be treated is improved.

（２）、前記（１）の結果、より大型の装置による大口
径のウェハの加熱処理が可能となり、半導体装置の製造
における生産性が向上される。(2) As a result of (1) above, it becomes possible to heat-process large-diameter wafers using a larger apparatus, and productivity in manufacturing semiconductor devices is improved.

（３）、前記（２）の結果、製品の製造原価が低減でき
る。(3) As a result of (2) above, the manufacturing cost of the product can be reduced.

以上本発明者によってなされた発明を実施例に基づき具
体的に説明したが、本発明は前記実施例に限定されるも
のではなく、その要旨を逸脱しない範囲で種々変更可能
であることはいうまでもない。Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Nor.

たとえば、加熱手段としては抵抗加熱ヒータおよび赤外
線ランプヒータの他に、たとえば高周波電力による加熱
を併用することも可能である。For example, as a heating means, in addition to a resistance heater and an infrared lamp heater, it is also possible to use, for example, heating by high frequency power.

し利用分野］ 以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野であるウェハの膜形成技術
に適用した場合について説明したが、それに限定される
ものではなく、たとえば、エージング技術、アニール技
術などに広く適用できる。[Field of Application] In the above description, the invention made by the present inventor has been mainly applied to the application field of wafer film formation technology, which is the background of the invention, but the present invention is not limited to this, for example, It can be widely applied to aging technology, annealing technology, etc.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図（ａ）は本発明の一実施例であるウェハの加熱処
理装置の断面図、 第１図（ｂ）は前記第１図（ａ）において線Ｂ−Ｂで示
される部分の断面図である。 １・・・処理室、２・・・ボート、３・・・ウェハ（被
処理物）、４・・・反応ガス供給パイプ、５・・・排気
パイプ、６・・・フランジ部、７・・・赤外線ランプヒ
ータ（加熱手段）、８・・・抵抗加熱ヒータ（加熱手段
）。FIG. 1(a) is a cross-sectional view of a wafer heat treatment apparatus which is an embodiment of the present invention, and FIG. 1(b) is a cross-sectional view of the portion indicated by line BB in FIG. 1(a). It is. DESCRIPTION OF SYMBOLS 1... Processing chamber, 2... Boat, 3... Wafer (processed object), 4... Reaction gas supply pipe, 5... Exhaust pipe, 6... Flange part, 7... - Infrared lamp heater (heating means), 8...resistance heater (heating means).

Claims (1)

【特許請求の範囲】 １、処理室内に位置される被処理物を加熱することによ
って所定の処理を施す加熱処理装置であって、少なくと
も２種類の加熱手段を有することを特徴とする加熱処理
装置。 ２、加熱手段が、抵抗加熱ヒータおよび赤外線ランプヒ
ータで構成されることを特徴とする特許請求の範囲第１
項記載の加熱処理装置。 ３、被処理物がウェハであることを特徴とする特許請求
の範囲第１項記載の加熱処理装置。[Scope of Claims] 1. A heat treatment apparatus that performs a predetermined process by heating a workpiece placed in a process chamber, the heat treatment apparatus having at least two types of heating means. . 2. Claim 1, wherein the heating means is comprised of a resistance heater and an infrared lamp heater.
The heat treatment apparatus described in Section 1. 3. The heat processing apparatus according to claim 1, wherein the object to be processed is a wafer.
JP27082984A 1984-12-24 1984-12-24 Heat treatment device Pending JPS61148814A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27082984A JPS61148814A (en) 1984-12-24 1984-12-24 Heat treatment device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27082984A JPS61148814A (en) 1984-12-24 1984-12-24 Heat treatment device

Publications (1)

Publication Number Publication Date
JPS61148814A true JPS61148814A (en) 1986-07-07

Family

ID=17491590

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27082984A Pending JPS61148814A (en) 1984-12-24 1984-12-24 Heat treatment device

Country Status (1)

Country Link
JP (1) JPS61148814A (en)

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