JPS6132418A - Heating device - Google Patents

Abstract

PURPOSE:To obtain the device which heats only the object to be heated uniformly and effectively with high accuracy by heating the object only with the microwave with holding the object by pins or the like whose contact area are small and controlling a distribution of the microwave electric field strength based on the information on temperatures of plural points. CONSTITUTION:A semiconductor wafer 3 is set on a crystal pin stage 2 in a processing chamber 1 and the condition such as heating temperature value (a temperature difference) and heating time of point A12, point B13 on the wafer 3 are preset as the information on the heating conditions in the comprehensive control part 18. A stage motor 4 is driven to rotate a wafer 3 and a microwave 6 is generated from a microwave generator 5 to heat the wafer 3. The temperatures of the points A and B are measured by temperature measuring parts 14 and 15 and a microwave output is controlled. At the same time, a linear pulse motor 9 is driven to move a reflection end 10 to the right and left. Annealing is done by heating for the predetermined time while controlling a microwave strength (a standing wave).

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a heat treatment technique, and relates to a technique effective for use in, for example, heat treatment of semiconductor wafers and heat treatment accompanied by reactions in the manufacture of semiconductor devices.

[Background technology]

As is well known, when manufacturing semiconductor devices, heat treatment or heat treatment accompanied by reaction is performed in eight different ways, including crystal growth treatment, impurity diffusion treatment, crystal annealing treatment, passivation film generation treatment, and photoresist baking treatment. is being carried out.

Conventionally, these heating methods were developed, for example, on November 1, 1983.
Various heating methods such as heaters and infrared rays have been devised, as described in the Electronic Materials Special Issue published by the Industrial Research Council on page 57 onwards.

In the case of the heater heating method, there are methods in which the object to be heated is supported by a jig or the like in a heating atmosphere and heated, or the object to be heated is directly grounded to a heating source such as a heater block.

In order to accurately heat the object to be heated using the above-described method, the furnace wall, object support jig, heater block, etc. other than the object to be heated must also be heated accurately, and accurate heating is difficult.

In addition, the above-mentioned method has extremely low heating efficiency, takes a long processing time (and if automated, the equipment becomes large.

Similarly, in heat treatment that involves a reaction, reactions occur in objects other than the object to be heated, which do not require a reaction, and unnecessary products are generated on the object support jig and on the inner wall of the processing chamber. As a result,
When manufacturing semiconductor elements by heat treatment accompanied by reactions,
It has been found that unnecessary products fall onto the heated objects used to manufacture semiconductor devices, leading to a decline in the quality of the semiconductor devices being manufactured.

At the same time, incidental work such as cleaning unnecessary products generated on the walls of the processing chamber increases.

On the other hand, in the case of infrared heating, temperature accuracy becomes poor due to uneven irradiation of infrared rays, etc., resulting in a decrease in processing accuracy in heat treatment involving heating and reaction.

At the same time, it was found that heating power consumption was large due to poor thermal energy conversion efficiency.

[Purpose of the invention]

An object of the present invention is to provide a heating device that uniformly, precisely, and efficiently heats only the object to be heated.

The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

[Summary of the invention]

A brief overview of typical inventions disclosed in this application is as follows.

That is, as a means of heating the object to be heated, electromagnetic waves such as microwaves are irradiated to heat only the object to be heated.

As a uniform heating means, the object to be heated is held on a support stand with a small contact area, such as a bottle, and heated with microwaves while being rotated.

At the same time, a microwave reflecting end whose position can be controlled is provided in the microwave transmission circuit, and characteristics measurement, that is, temperature measurement, of at least two locations on the heated object is performed, and the position of the microwave reflecting end is controlled according to the temperature measurement results. This is done to equalize the microwave electric field strength (standing wave strength) acting on the object to be heated, and to uniformly heat the object.

Further, in order to accurately heat the object to a predetermined temperature, the microwave output amount is controlled to a predetermined temperature according to the temperature measurement result described above.

In addition, in the present invention, a microwave cutoff pipe is used between the heat treatment section and the temperature measurement section as a means for improving temperature measurement accuracy.

Conventionally, as a new method of microwave insulation, the temperature of the object to be measured (
A microwave shield wire mesh was used between the heat-treated material) and the temperature measurement section. With this method, the temperature of the wire mesh became a cause of error in temperature measurement, making it impossible to accurately measure temperature.

As a countermeasure to this problem, the principle of microwave cutoff wavelength or a method using a microwave absorbing material is used to cut off microwaves, make the temperature measurement area a space, eliminate the above-mentioned error factors, and perform accurate temperature measurement.

[Embodiment 1] FIG. 1 is a sectional view showing the main parts of a heat treatment apparatus according to an embodiment of the present invention, and is a sectional view of the main parts showing an example of application to an annealing apparatus for semiconductor wafers in semiconductor device manufacturing. be. That is, when a semiconductor wafer is implanted with impurities by ion implantation, crystal damage occurs on the surface layer of the conductive wafer. As a means of recovering this crystal damage, it is necessary to perform annealing, and this example is shown below. ' To explain the equipment configuration, there is a metal processing chamber 1 that serves as the heat treatment section that reflects microwaves, and a bin stage 2 that serves as a support and is made of a material that transmits microwaves (such as quartz). A semiconductor wafer 3, which is an object to be heated and has layers, is set. The pin stage 3 is rotated by a stage motor SM4.

On the other hand, an i-microwave 6 is generated from the microwave generator MWG5 and propagated into the processing chamber 1 through the circulator ClR7. In addition, in the processing chamber 1, a standing wave generating plate 8 is connected to a circulator ClR so that a required microwave standing wave (combined wave of incident microwave and reflected microwave) is formed.
7 and the processing chamber 1.

Furthermore, the reflection terminal 1 serves as an electromagnetic wave reflection end that reflects microwaves whose position can be controlled by a linear pulse motor LMP9.
0 is set.

Note that the microwaves that are no longer needed in the processing chamber 1 and reflected pass through the circulator ClR7 and are transferred to the dummy load DRIIK.
It is guided, converted into heat, and absorbed.

Further, the temperatures at point A 12 and point 8 13 on the semiconductor wafer 3 are determined by the temperature measurement unit TMAI 4 and the temperature measurement unit T, respectively.
Measured by MB15. Note that the microwave 6 is cut off between the processing chamber 1 and the temperature measuring part TMA14 and the temperature measuring part TMB15 by a microwave cutoff pipe A16 and a microwave cutoff pipe B17 that utilize the principle of the cutoff wavelength of a cylindrical waveguide. The temperature measurement progress is structured as a space.

The overall control unit CPU18 compares and calculates the temperature information of the A point 12 and the 8 point 13 on the semiconductor wafer 3 measured by the temperature measuring unit TMA14 and the temperature measuring unit TMB15 with the heating condition information 19 set from the outside, As a result, the microwave reflecting end 10 is driven by the linear pulse motor LPM9, thereby reducing the temperature difference between the above-mentioned points A 14 and 8 points 15.

The amount of microwave output generated from the microwave generator MWG5 is controlled to perform heating control at a predetermined temperature for a predetermined time. Also,
The overall control unit CPU 18 drives the stage motor SM4 according to the heating condition information 19.

Next, a method of annealing the crystal damaged layer formed on the semiconductor wafer 3 using this apparatus will be explained.

A semiconductor wafer 3 having a crystal damaged layer on the surface is set on the bin stage 2, and the heating condition information 19 is sent to the overall control unit CPU 18, and the number of revolutions of the stage motor SM4 is set to the heating point 13 of point A 12° and point 8 of the semiconductor wafer 3. Set conditions such as temperature value (temperature difference) and heating time, and start.

When the stage motor SM4 is driven and the semiconductor wafer 3 reaches a predetermined rotational speed, the microwave generator MWG5 generates microwaves 6, and the semiconductor wafer 3 begins to be heated.

The temperatures of point A 12 and point 8 13 on the semiconductor wafer 3 are always measured by the temperature measurement unit TMA14 and temperature measurement unit TMB15, and the temperature values and temperature difference between these two points match the heating condition information 19. At the same time as controlling the amount of microwave output generated from the microwave generator MWG5, the linear pulse motor LPM9 is driven to move the reflective terminal 10 left and right, thereby controlling the microwave intensity (standing wave) acting on the semiconductor wafer 3. Heating is controlled for a predetermined period of time.

As a result, the semiconductor wafer 3 is heated uniformly and accurately, and a high-quality annealing process is performed.

When the annealing process is completed, the microwave generator MW
The microwave 6 from G5 is cut off, and the rotation of linear pulse motor LPM9 and stage motor 4 is stopped. The annealed semiconductor wafer 3 is taken from the bin stage 2.

The removal annealing process is completed.

〔effect〕

(11) The present invention holds the object to be heated using a bottle or the like with a small contact area (heat dissipation), and can realize heating using only microwaves. Since the microwave electric field strength distribution required for heating can be controlled, uniform and highly accurate heating can be achieved.

(21 Since the microwave cutoff pipe allows a space between the temperature measurement object (heated object) and the temperature measurement section,
Enables highly accurate temperature measurement and achieves highly accurate heating.
Ru.

(3) As explained in section (1), the present invention is advantageous in that the heating energy capacity or the reaction energy capacity can be minimized by directly heating or reacting only the object to be heated and the reactant. The output of the energy source can be minimized.

(4) Since the heating capacity of the object to be heated is reduced as in (1) and (31) above, the object to be heated can be efficiently heated in a short time.

(5) The object to be heated is heated by microwaves.

This heating generates heat due to electromagnetic losses such as resistance loss and dielectric loss that occur inside the heated object due to microwave irradiation, so the heating efficiency is extremely high because the heat is generated from inside the heated object.

(6) When processing the object to be treated with a reactive substance, only the substance that requires the reaction can be heat-treated, so unnecessary products are less likely to be generated than in the past. The surface is less likely to be contaminated with unwanted products.

(11) (Section 61 above) enables uniform and highly accurate heating or reaction treatment with less contamination, which creates a synergistic effect that enables stable and highly reliable heat treatment with good quality.

Although the present invention has been specifically explained above based on examples, the present invention is not limited to the above-mentioned examples (it goes without saying that various modifications can be made without departing from the gist of the invention). Nor.

Further, the present invention can be carried out in a high-pressure atmosphere or in a normal-pressure atmosphere.

The above-mentioned treatment can be performed in a low-pressure atmosphere, in a vacuum, or in a substance that transmits microwaves, and in any case, the same effects as in the above embodiment can be obtained.

[Application field]

In the above explanation, the invention made by the present inventor is mainly applied to an annealing apparatus in semiconductor device manufacturing, which is the background field of application, but the invention is not limited to this. Crystal growth treatment methods, thin film generation treatment methods, and thermal diffusion treatment methods for all substances that have electromagnetic loss effects.

It can be applied to heat treatment methods and heat treatments involving reactions in all fields, including thin film curing baking treatment methods.

[Brief explanation of drawings]

FIG. 1 is a sectional view of a main part of an annealing processing apparatus according to the present invention. DESCRIPTION OF SYMBOLS 1... Processing chamber (processing part or heat processing part), 2... Bin stage, 3... Semiconductor ueno, 4... Stage motor SM, 5... Microwave generation part MWG, 6...
... Microwave, 7... Circulator CIR, 8.
...Standing wave generation plate, 9...Linear pulse motor LMP
, 10...Reflection termination, 11...Dummy load DR
112...Point A, 13...Point B, 14...Temperature measurement section TMA, 15...Temperature measurement section TMB, 16...
Microwave cutoff pipe A 17...Microwave cutoff B118...Overall control unit CPU, 19...Heating condition information.

Claims (1)

[Claims] 1. A heating device that heats an object to be heated using electromagnetic waves emitted from an electromagnetic wave generating means, the heating device comprising: a support for supporting the object to be heated in a heating treatment section; and an electromagnetic wave reflection whose position can be controlled. a characteristic measuring unit that measures the characteristics of the end and a plurality of locations of the object to be heated; and a characteristic measuring unit that measures the intensity of the electromagnetic waves emitted from the electromagnetic wave reflection end position and/or the electromagnetic wave generating means simultaneously or independently based on the characteristic measurement information of the characteristic measuring unit. What is claimed is: 1. A heating device comprising: a control section for controlling the temperature; and an electromagnetic wave shielding material between the heat treatment section and the characteristic measurement section. 2. The support stand supports the object to be processed at at least three points, at least two lines, or one line with no end point, as set forth in claim 1. heating device. 3. The heating device according to claim 1 or 2, wherein a plurality of the electromagnetic wave shielding members are installed in a pipe shape between the heat treatment section and the characteristic measurement section.