JPS61142768A - Contact type image sensor - Google Patents
Contact type image sensorInfo
- Publication number
- JPS61142768A JPS61142768A JP59265032A JP26503284A JPS61142768A JP S61142768 A JPS61142768 A JP S61142768A JP 59265032 A JP59265032 A JP 59265032A JP 26503284 A JP26503284 A JP 26503284A JP S61142768 A JPS61142768 A JP S61142768A
- Authority
- JP
- Japan
- Prior art keywords
- light
- electrode
- shielding window
- substrate
- light shielding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 abstract description 5
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 abstract description 2
- 238000005530 etching Methods 0.000 abstract description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 239000006089 photosensitive glass Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
Abstract
Description
【発明の詳細な説明】
〈発明の技術分野〉
本発明は集光性レンズを用いない、いわゆる完全密着型
イメージ素子の改良に関するものであり特に原稿への入
射光の指向性を向上させ、実質的解像度を上げるために
形成される遮光窓の溝造の改良に関するものである。[Detailed Description of the Invention] <Technical Field of the Invention> The present invention relates to the improvement of a so-called complete contact type image element that does not use a condensing lens, and in particular improves the directivity of light incident on a document, thereby improving the This invention relates to an improvement in the groove structure of a light-shielding window formed to increase the optical resolution.
〈発明の技術的背景とその問題点〉
従来の完全密若型イメージ素子は、原稿への入射光線の
指向性を向上させるために電極形成と同時に電極材料を
用いて遮光窓を設けるように構成されている。<Technical background of the invention and its problems> A conventional fully dense image element is configured to provide a light-shielding window using an electrode material at the same time as electrode formation in order to improve the directivity of the incident light beam to the document. has been done.
第２図は、従来の密着型イメージ素子の構成例を示し、
ｌは光学的に透明な基板であり、この透明基板ｌ上に光
学的に不透明な電極２が形成されており、この電極２に
は複数の光量取込用窓（遮光窓）４が開口されている。FIG. 2 shows an example of the configuration of a conventional contact type image element.
1 is an optically transparent substrate, and an optically opaque electrode 2 is formed on this transparent substrate 1, and a plurality of light intake windows (light shielding windows) 4 are opened in this electrode 2. ing.
ま□た電極２上には光導電膜３が形成されており、その
上に光学的に透明な保護層５が形成されている。A photoconductive film 3 is formed on the electrode 2, and an optically transparent protective layer 5 is formed thereon.
このように従来の素子にあっては、遮光窓４は透明基板
１に対して光導電膜３側にのみ形成されているため、基
板１の反対側から入射される指向性のない光源に対して
は、遮光の影響が大きく、実質上解像度の向上が期待で
きるようなスリットとしての遮光窓の役割を充分に果た
すことが出来ず、高解像度の完全密着型イメージ素子を
得ることが困難であった。In this way, in the conventional element, the light shielding window 4 is formed only on the photoconductive film 3 side with respect to the transparent substrate 1. In this case, the influence of light blocking is large, and the role of the light blocking window as a slit, which can be expected to substantially improve resolution, cannot be fully fulfilled, making it difficult to obtain a high-resolution fully contact type image element. Ta.
〈発明の目的〉
本発明は上記の問題点に鑑みてなされたものであり、入
射光の指向性を極力向上させて特に集光性レンズを用い
なくても充分な解像度の期待できる密着型イメージ素子
を提供することを目的としている。<Object of the Invention> The present invention has been made in view of the above-mentioned problems, and provides a close-contact type image that can be expected to have sufficient resolution without using a condensing lens by improving the directivity of incident light as much as possible. The purpose is to provide devices.
〈発明の構成〉
上記目的を達成するため１本発明の密着型イメージ素子
は、光学的に不透明な基板と、この基板開口した光学的
に不透明な電極層と、上記の電極層上に形成された光電
変換部とを備えるように構成している。<Structure of the Invention> In order to achieve the above object, the contact type image element of the present invention comprises an optically opaque substrate, an optically opaque electrode layer with an opening in the substrate, and an optically opaque electrode layer formed on the electrode layer. and a photoelectric conversion section.
即ち１本発明によれば、光源に対してキャピラリースリ
ットの効果を持った微細透孔の遮光窓を電極の一部とこ
れに対応した基板の一部によって画素毎に作成して、入
射光の指向性を向上させて充分な解像度の期待できる密
着型イメージ素子が得られることになる。That is, according to the present invention, a light-shielding window with a fine through-hole that has the effect of a capillary slit for the light source is created for each pixel by a part of the electrode and a corresponding part of the substrate, thereby blocking the incident light. A contact type image element with improved directivity and expected sufficient resolution can be obtained.
く発明の実施例〉
以下、図面を参照して本発明の一実施例を詳細に説明す
る。Embodiment of the Invention Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings.
第１図は本発明の密着型イメージ素子の構造を示す断面
図である。FIG. 1 is a sectional view showing the structure of a contact type image element of the present invention.
第１図において、１１は感光性不透明ガラス基板、１２
は不透明電極、１３は光導電膜、１４は遮光窓、１５は
保護層、１６は原稿、１７は感光性不透明ガラス基板Ｉ
Ｎこ形成されたキャピラリー型遮光窓（微細透孔）であ
る。In FIG. 1, 11 is a photosensitive opaque glass substrate, 12
13 is an opaque electrode, 13 is a photoconductive film, 14 is a light-shielding window, 15 is a protective layer, 16 is a document, 17 is a photosensitive opaque glass substrate I
This is a capillary-type light-shielding window (fine holes) formed in N.
次に上記した本発明に係る密着型イメージ素子の構造を
、更にその一作製方法と共に説明する。Next, the structure of the contact type image element according to the present invention described above will be further explained along with one manufacturing method thereof.
まず、厚さ１．５１ｍの感光性不透明ガラス基板１１（
例えば保谷硝子に、に、（７）ＰＥＧ１３０Ｃ）上に、
フォト＋ｙソグラフィ技術を用いて遮光窓工４のついた
不透明電極を形成する。なお、第１図に示す素子は対向
電極型素子構造を想定しており、遮光窓１４は共通電極
側に形成する。First, a photosensitive opaque glass substrate 11 (
For example, on Hoya Glass, (7) PEG130C),
An opaque electrode with a light-shielding window 4 is formed using photo+y lithography technology. Note that the element shown in FIG. 1 is assumed to have a facing electrode type element structure, and the light shielding window 14 is formed on the common electrode side.
次にＣｄＳｅあるいはａ−８ｉ等の光導電膜１３を電極
１２上に作製する。Next, a photoconductive film 13 of CdSe or A-8i is formed on the electrode 12.
その後、遮光窓１４に相当する位置に遮光窓１４をマス
クとして電極側から紫外線等を露光し感光性ガラスＩＮ
こ入射する紫外線強度、厚さ方向のエツチング速度を利
用してキャピラリー型遮光窓（微細透孔）１７を基板１
１に形成する。Thereafter, using the light-shielding window 14 as a mask, UV rays or the like are exposed from the electrode side to the position corresponding to the light-shielding window 14, and the photosensitive glass IN
Using the intensity of the incident ultraviolet rays and the etching speed in the thickness direction, a capillary-type light-shielding window (fine holes) 17 is formed on the substrate 1.
Form into 1.
なお、この微細透孔１７に鉛ガラス等を埋込んで光源か
らの光が原稿画１６に焦点を結ぶように成して、より好
適である。It is more preferable to fill the fine through holes 17 with lead glass or the like so that the light from the light source is focused on the original image 16.
次に共通電極及び個別電極の形成された光導電膜１３上
に透明保護膜１５を形成する。Next, a transparent protective film 15 is formed on the photoconductive film 13 on which the common electrode and individual electrodes are formed.
本発明の一実施例としての密着型イメージ素子は以上の
ように、光源に対してキャピラリースリットの効果を持
った遮光窓を電極の一部とこれに対応した基板の一部に
よって画素毎に作成した構造であるため、入射光の指向
性が向上し、特に集光性レンズを用いることなく、充分
な解像度を得ることが出来る。As described above, in the contact type image element as an embodiment of the present invention, a light-shielding window having the effect of a capillary slit for the light source is created for each pixel by a part of the electrode and a corresponding part of the substrate. Because of this structure, the directivity of incident light is improved, and sufficient resolution can be obtained without particularly using a condensing lens.
〈発明の効果〉
以上のように本発明によれば、不透明電極の一部に形成
される遮光窓と、これと対をなし不透明基板を貫通して
形成された微細透孔（遮光窓）にＷ考１って、これを通
過して原稿に入射する入射光ノ指向性を向上させること
が出来、また画素毎に光源を分割する効果が得られ入射
光量の損失を最少限に抑制して、実質上の解像度を上げ
ることが出来る。<Effects of the Invention> As described above, according to the present invention, the light-shielding window formed in a part of the opaque electrode and the fine through-hole (light-shielding window) formed as a pair through the opaque substrate. W Consideration 1: It is possible to improve the directivity of the incident light that passes through this and enters the document, and it also has the effect of dividing the light source for each pixel, minimizing the loss of the amount of incident light. , the actual resolution can be increased.
第１図は本発明の密着型イメージ素子の一実施例の構成
を示す断面図、第２図は従来素子の構成を示す断面図で
ある。
１１・・・不透明感光性ガラス基板、１２・・・不透明
電極、１３・・・光導電膜、１４・・・遮光窓、１５・
・・保護層、１６・・・原稿、エフ・・・微細透孔。FIG. 1 is a sectional view showing the structure of an embodiment of the contact type image element of the present invention, and FIG. 2 is a sectional view showing the structure of a conventional element. DESCRIPTION OF SYMBOLS 11... Opaque photosensitive glass substrate, 12... Opaque electrode, 13... Photoconductive film, 14... Light shielding window, 15...
...Protective layer, 16...Manuscript, F...Minute perforation.
Claims (1)
置と対応して開口した光学的に不透明な電極層と、 上記電極層上に形成された光電変換部と を備えたことを特徴とする密着型イメージ素子。[Claims] 1. An optically opaque substrate, a fine through hole formed in the substrate, and a light quantity intake window formed on the substrate with an opening corresponding to the position of the fine through hole. What is claimed is: 1. A contact image element comprising: an optically opaque electrode layer; and a photoelectric conversion section formed on the electrode layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59265032A JPS61142768A (en) | 1984-12-14 | 1984-12-14 | Contact type image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59265032A JPS61142768A (en) | 1984-12-14 | 1984-12-14 | Contact type image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61142768A true JPS61142768A (en) | 1986-06-30 |
Family
ID=17411637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59265032A Pending JPS61142768A (en) | 1984-12-14 | 1984-12-14 | Contact type image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61142768A (en) |
-
1984
- 1984-12-14 JP JP59265032A patent/JPS61142768A/en active Pending
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