JPS61142648A - Sample table for scan electron microscope - Google Patents

Sample table for scan electron microscope

Info

Publication number
JPS61142648A
JPS61142648A JP26272584A JP26272584A JPS61142648A JP S61142648 A JPS61142648 A JP S61142648A JP 26272584 A JP26272584 A JP 26272584A JP 26272584 A JP26272584 A JP 26272584A JP S61142648 A JPS61142648 A JP S61142648A
Authority
JP
Japan
Prior art keywords
sample
sample table
electron microscope
symbol
marked
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP26272584A
Other languages
Japanese (ja)
Inventor
Kazushi Yoshimura
和士 吉村
Toshimitsu Hamada
浜田 利満
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP26272584A priority Critical patent/JPS61142648A/en
Publication of JPS61142648A publication Critical patent/JPS61142648A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/20Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)

Abstract

PURPOSE:To identify a sample table and sample position depending on a symbol when the inage is observed by marking detectably through a microscope the symbol indicating the sample table position on the surface of the sample table for scan electron microscope. CONSTITUTION:On the surface on which a sample is mounted of the sample table for scan electron microscope, the spider's web shaped pattern consisting of the concentric circle and radial lines or the lattice shaped pattern consisting of the vertical and transverse lines is marked by etching or carving with the symbol such as numeral, etc. given to the radial line, vertical and transverse line. When observing the image by mounting the sample on the table, the position of the sample table and sample can be checked by providing slight parallel movement for the sample table. Therefore, when the distance from the object lens to the sample is changed, the rotary angle of the electron beam scanning coordinate, etc. can be easily checked and working efficiency can also be improved.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は走査電子顕微鏡(以下8EMと称す)による像
観察時に、試料台および試料の観察位置を容易に認知で
きる走査電子顕微鏡用試料台に関するものである。
[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a sample stand for a scanning electron microscope that allows the observation position of the sample stand and the sample to be easily recognized during image observation using a scanning electron microscope (hereinafter referred to as 8EM). It is.

〔発明の背景〕[Background of the invention]

一般に8113Mは、その焦点深度が深い特長を有する
ので、試料を斜め方向から観察する場合が多い。このた
め従来の8EM用試料台は、これを傾斜したときに対物
レンズなどに衝突しないように自由度を大きくするため
、小型に形成された本のが大部分であった。
In general, since the 8113M has a deep depth of focus, the sample is often observed from an oblique direction. For this reason, most of the conventional sample stands for 8EM have been made small in order to increase the degree of freedom so as not to collide with the objective lens etc. when the sample stand is tilted.

ところが、最近は半導体などのパターン幅が微細化され
るようになり、これに伴って従来よ】り広く使用されて
きた光学顕微鏡では分解能力が不足するので、この光学
顕微鏡の代わりにSIBMを用いることが増加する傾向
にある。そこで、半導体ウェハを小片に切断しなくても
よいように、半導体ウェハなそのまま装着できる大型の
試料台を備えた8gMが採用されるようになった。
However, recently, the pattern width of semiconductors and other devices has become finer, and as a result, the conventionally widely used optical microscopes lack the resolving power, so SIBMs are used instead of optical microscopes. There is a tendency for this to increase. Therefore, in order to eliminate the need to cut the semiconductor wafer into small pieces, the 8gM, which is equipped with a large sample stage onto which the semiconductor wafer can be mounted as is, has been adopted.

一方、SIBMは電子ビームを観察対象の試料に照射し
、これにより発生した二次電子および反射1.子を収集
することにより像信号をうるために、試料を真空試料室
内に設置する必要がある。
On the other hand, in SIBM, an electron beam is irradiated onto a sample to be observed, and the resulting secondary electrons and reflections 1. In order to obtain image signals by collecting samples, it is necessary to place the sample in a vacuum sample chamber.

多数の8BMは二次電子などの検出に際し、シンチレー
タと光電子増倍管などの光検出器を組合せて見られた二
次電子を、−たん光に変換してから電気信号をえている
ので、試料室内に外部から光が侵入しないようにしなけ
ればならない。
When detecting secondary electrons, many 8BMs use a combination of a scintillator and a photodetector such as a photomultiplier tube to convert the observed secondary electrons into -fluorescence and then obtain an electrical signal. It is necessary to prevent light from entering the room from outside.

このため、8EMにより試料を観察しているときには、
外部から試料を直接に見ることは不可能である。
Therefore, when observing a sample with 8EM,
It is impossible to directly view the sample from the outside.

したがって、観察し【いる場所が、試料全体、または試
料台のどの位置にあるかを容易に判別することが困難で
あった。また、8BMは対物レンズから試料までの距離
、すなわちワーキングディスタンスを変えると、電子ビ
ーム走査のX。
Therefore, it has been difficult to easily determine where on the whole sample or on the sample stage the observation point is. 8BM also changes the electron beam scanning X by changing the distance from the objective lens to the sample, that is, the working distance.

Y座標は回転するが、この回転角を把握することが困難
である。
Although the Y coordinate rotates, it is difficult to grasp this rotation angle.

〔発明の目的〕[Purpose of the invention]

本発明は上記のような従来技術の難点を解消し、8El
iMによる像M祭時に試料台および試料の観察位置を容
易に認知することができる走査電子顕微鏡用試料台を提
供することを目的とするものである。
The present invention solves the difficulties of the prior art as described above, and
It is an object of the present invention to provide a sample stand for a scanning electron microscope that allows the observation position of the sample stand and the sample to be easily recognized during the image M festival by iM.

〔発明の概要〕[Summary of the invention]

本発明は上記目的を達成するために、試料を装着する走
査電子顕微鏡用試料台の表面上に試料台位置を表示する
記号を、前記顕微鏡により検出可能に標記し、amm待
時前記記号により試料台位置を認知するようにしたこと
を、特徴とする。
In order to achieve the above object, the present invention includes a mark indicating the position of the sample stand on the surface of a sample stand for a scanning electron microscope on which a sample is mounted, so that the position of the sample stand can be detected by the microscope. The feature is that the position of the table is recognized.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の実施例を図面について説明する。 Embodiments of the present invention will be described below with reference to the drawings.

第1図(a)、 (b)は本実施例に適用される試料台
1の平面図および断面図であり、この試料台10表面1
A上には、第2図(a)、(b) K示すようなパター
ンが標記されている。すなわち第2図(a)。
FIGS. 1(a) and 1(b) are a plan view and a sectional view of a sample stage 1 applied to this embodiment, and the surface 1 of this sample stage 10 is
A pattern as shown in FIGS. 2(a) and 2(b) K is marked on A. That is, FIG. 2(a).

(b)に示すものは、同心円と放射状線とからなるくも
の巣状のパターンおよび直交する縦線と横線とからなる
格子状のパターンをそれぞれ表わしており、かつ前記放
射状線、縦・横線お上びこの縦・横線の各交点の任意数
には、記号例えば数字がそれぞれ標記されている。
The pattern shown in (b) represents a spider web-like pattern consisting of concentric circles and radial lines, and a lattice-like pattern consisting of orthogonal vertical lines and horizontal lines, and the radial lines, vertical and horizontal lines, and A symbol, for example, a number, is written at each arbitrary number of intersections of the vertical and horizontal lines of the top.

上記数字の大きさは、SEEMの最低倍率が20〜10
0であるからtmm’以下になるため、試料を装着する
場合には、前記文字を肉眼で確認することが困難である
。そこで、第2図に示すようにパターンの邪魔にならな
い部分、例えば各パターンの最外側部に大きい文字を標
記する。
The size of the above number is that the minimum magnification of SEEM is 20 to 10.
Since it is 0, it is less than tmm', so when a sample is attached, it is difficult to confirm the characters with the naked eye. Therefore, as shown in FIG. 2, large letters are written on parts that do not interfere with the pattern, for example, on the outermost part of each pattern.

上記各パターンおよび各記号は、試料台表面1人上に彫
刻またはエツチングなどにより、凹凸を設けて標記され
るか、または試料台の物質と二次電子放出率などの異な
る金属を、試料台表面1人上に蒸着またはメ・キするこ
とにより標記される。
The above patterns and symbols may be marked by carving or etching on the surface of the sample stand, or by marking the surface of the sample stand with a metal that has a different secondary electron emission rate from the material of the sample stand. Marked by vapor deposition or metallization on one person.

第3図は、第2図(a)にくもの巣状パターンを標記し
た試料台表面1人上に、完全形の半導体クエハ2を装着
した平面図である。この図より明らかなように、半導体
クエハ2の内部に関しては、試料台表面1A上に標記さ
れたパターンおよび記号を見ることはできないが、試料
台1を半導体ウェハの周囲まで平行に移動させることに
より、第4図に示すように8gMの観察用CRT(Ca
thode Ray Tube :陰極線管)K映りた
試料台1および前記CRTに映りた半導体ウェハ2の観
察位置を容易に認知することができる。
FIG. 3 is a plan view in which a complete semiconductor wafer 2 is mounted on the surface of the sample stage on which the spider web pattern is marked in FIG. 2(a). As is clear from this figure, although the patterns and symbols marked on the sample stage surface 1A cannot be seen inside the semiconductor wafer 2, by moving the sample stage 1 parallel to the periphery of the semiconductor wafer, , as shown in Figure 4, 8 gM observation CRT (Ca
(Thode Ray Tube) The observation position of the reflected sample stage 1 and the semiconductor wafer 2 reflected on the CRT can be easily recognized.

一方、第5図は第2図(b)に示す格子状パターンを標
記した試料台表面1A上に、小片に区分された複数の半
導体クエハ3を装着した平面図である、この場合も上記
と同様にして、試料台1に標記された格子状パターンお
よび記号により、第6図に示すように試料台1および半
導体ウェハ5の観察位置を容易に認知することができる
On the other hand, FIG. 5 is a plan view in which a plurality of semiconductor wafers 3 divided into small pieces are mounted on the sample stage surface 1A marked with the grid pattern shown in FIG. 2(b). Similarly, the observation positions of the sample stage 1 and the semiconductor wafer 5 can be easily recognized by the grid pattern and symbols marked on the sample stage 1, as shown in FIG.

また、前記のようにワーキングディスタンスを変更した
場合、電子ビームの走査座標は回転することがあるが、
この際には第2図(b)に示す格子状・パターンを標記
した試料台1を使用すれば、第7図に示すように8BM
の観察用CRT上に半導体ウェハ3が弄示され、試料台
1の座標との回転角を容易に認知することができる、〔
発明の効果〕 以上説明したように、本発明によれば、試料台および試
料の観察位置を容易に認知することができると共に、ワ
ーキングディスタンスを変更させたときの電子ビーム走
査座標の回転角を容易に認知することができる。したが
って、本発明によれば、11tvt時における作業効率
を向上させることが可能である。
Additionally, when the working distance is changed as described above, the scanning coordinates of the electron beam may rotate;
In this case, if you use the sample stage 1 marked with the grid pattern shown in Fig. 2(b), 8BM as shown in Fig.
The semiconductor wafer 3 is displayed on the observation CRT, and the rotation angle with respect to the coordinates of the sample stage 1 can be easily recognized.
[Effects of the Invention] As explained above, according to the present invention, the observation position of the sample stage and the sample can be easily recognized, and the rotation angle of the electron beam scanning coordinate when changing the working distance can be easily adjusted. can be recognized. Therefore, according to the present invention, it is possible to improve work efficiency at 11 tvt.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a);(b)は本発明に適用される試料台の平
面図および断面図、第2図(a)、(b)は第1図の試
料台上に標記される各パターンを示す図、第3図および
第5図は本発明に係わる試料台の各実施例の試料装着時
の平面図、第4図、第6図および第7図は本実施例の試
料台および装着試料をSEMにより観察した時の観察用
CRTの表示例を示す図である。 1.1′・・・・・・試料台、 1人・・・・・・試料台表面、 2.3・・・・・・試料、 入・・・・・・くもの巣状パターン、 B・・・・・・格子状パターン。
Figures 1(a) and (b) are a plan view and a sectional view of a sample stage applied to the present invention, and Figures 2(a) and (b) are each pattern marked on the sample stage in Figure 1. FIGS. 3 and 5 are plan views of each embodiment of the sample stage according to the present invention when the sample is mounted, and FIGS. 4, 6, and 7 are the sample stage and mounting of the present embodiment. FIG. 3 is a diagram showing an example of a display on an observation CRT when a sample is observed using an SEM. 1.1'...Sample stand, 1 person...Sample stand surface, 2.3...Sample, enter...Spiderweb pattern, B・・・・・・Lattice pattern.

Claims (1)

【特許請求の範囲】 1、試料を装着する走査電子顕微鏡用試料台において、
その試料装着面上に試料台位置を表示する記号を、前記
顕微鏡により検出可能に標記し、像観察時に前記記号に
より試料台位置を認知するようにしたことを特徴とする
走査電子顕微鏡用試料台。 2、上記記号は、くもの巣状パターンの各放射状線、ま
たは格子状パターンの各縦・横線と、この縦・横線の任
意数の交点、および前記両パターンの最外側部にそれぞ
れ標記することを特徴とする特許請求の範囲第1項記載
の走査電子顕微鏡用試料台。
[Claims] 1. In a sample stage for a scanning electron microscope on which a sample is mounted,
A sample stand for a scanning electron microscope, characterized in that a symbol indicating the position of the sample stand is marked on the sample mounting surface so that it can be detected by the microscope, and the position of the sample stand is recognized by the symbol during image observation. . 2. The above symbol shall be marked on each radial line of the spider web pattern or each vertical/horizontal line of the lattice pattern, any number of intersections of these vertical/horizontal lines, and on the outermost part of both patterns. A sample stage for a scanning electron microscope according to claim 1, characterized in that:
JP26272584A 1984-12-14 1984-12-14 Sample table for scan electron microscope Pending JPS61142648A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26272584A JPS61142648A (en) 1984-12-14 1984-12-14 Sample table for scan electron microscope

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26272584A JPS61142648A (en) 1984-12-14 1984-12-14 Sample table for scan electron microscope

Publications (1)

Publication Number Publication Date
JPS61142648A true JPS61142648A (en) 1986-06-30

Family

ID=17379723

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26272584A Pending JPS61142648A (en) 1984-12-14 1984-12-14 Sample table for scan electron microscope

Country Status (1)

Country Link
JP (1) JPS61142648A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006331852A (en) * 2005-05-26 2006-12-07 Jeol Ltd Surface observation analyzer
JP2007018944A (en) * 2005-07-11 2007-01-25 Hitachi High-Technologies Corp Sample stage for charged particle beam device
US7443588B2 (en) 2003-09-20 2008-10-28 Schott Ag Optical diffuser for producing a circular light field
CN112630242A (en) * 2020-12-03 2021-04-09 成都先进金属材料产业技术研究院有限公司 Navigation method for scanning electron microscope sample

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7443588B2 (en) 2003-09-20 2008-10-28 Schott Ag Optical diffuser for producing a circular light field
JP2006331852A (en) * 2005-05-26 2006-12-07 Jeol Ltd Surface observation analyzer
JP2007018944A (en) * 2005-07-11 2007-01-25 Hitachi High-Technologies Corp Sample stage for charged particle beam device
CN112630242A (en) * 2020-12-03 2021-04-09 成都先进金属材料产业技术研究院有限公司 Navigation method for scanning electron microscope sample

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