JPS61140174A - Gate turn-off thyristor - Google Patents
Gate turn-off thyristorInfo
- Publication number
- JPS61140174A JPS61140174A JP26075684A JP26075684A JPS61140174A JP S61140174 A JPS61140174 A JP S61140174A JP 26075684 A JP26075684 A JP 26075684A JP 26075684 A JP26075684 A JP 26075684A JP S61140174 A JPS61140174 A JP S61140174A
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- transistor
- gto
- anode
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 101100449816 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GTO1 gene Proteins 0.000 abstract description 6
- 230000008929 regeneration Effects 0.000 abstract description 4
- 238000011069 regeneration method Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000001172 regenerating effect Effects 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 1
Classifications
-
- H01L29/0834—
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for DC voltages or currents
- H03K17/732—Measures for enabling turn-off
Landscapes
- Thyristors (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明はゲートターンオフサイリスタ（以下ＧＴＯと略
す）に係り、特にアノードショートエミッタ構造に好適
なＧＴＯに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a gate turn-off thyristor (hereinafter abbreviated as GTO), and particularly to a GTO suitable for an anode short emitter structure.
従来のＧＴＯを第２図に示すような電圧形インバータに
適用する場合、負荷３からの回生電流や循環電流を流す
ためにダイオード２をＧＴＯｌに逆並列に接続する必要
がある。この電圧形インバータを小形化、低価格化させ
る一要因としてＧＴＯと共にダイオードを組込んだ、い
わゆる逆導通ＧＴＯがある。その他に第３図に示すよう
にアノードショートエミッタ構造はゲート・アノード間
はＰＮ接合であるので、カソード・ゲート間にスイッチ
ング素子を設ければ、ダイオード２は不要となる。When a conventional GTO is applied to a voltage source inverter as shown in FIG. 2, it is necessary to connect a diode 2 in antiparallel to the GTOl in order to allow regenerative current and circulating current from the load 3 to flow. One of the factors that has made this voltage source inverter smaller and cheaper is the so-called reverse conduction GTO, which incorporates a diode together with the GTO. In addition, as shown in FIG. 3, in the anode short emitter structure, there is a PN junction between the gate and the anode, so if a switching element is provided between the cathode and the gate, the diode 2 becomes unnecessary.
アノードショートエミッタに関する先行技術（特開昭５
３−１８４８４号）には、ショートを適度に行なうこと
によりショート抵抗をコントロールし、重金属を用いる
ことなくＧＴＯが製作できることが開示されている。し
かし、アノードショートを利用して逆導通を行なうとい
う認識はない。Prior art related to anode short emitter (Unexamined Japanese Patent Publication No. 5
No. 3-18484) discloses that short-circuit resistance can be controlled by appropriately short-circuiting, and GTO can be manufactured without using heavy metals. However, there is no recognition that reverse conduction can be achieved using an anode short.
本発明の目的は、アノードショートエミッタ構造を利用
して逆導通ｃＴ（ｌＩＴｈ供するにある。It is an object of the present invention to utilize an anode short emitter structure to provide reverse conduction cT (lITh).
本発明は、ＧＴＯのアノード・カソード間電圧を検出し
、アノード電位がカソード電位に対して負となる場合に
、ＧＴＯのゲート・カソード間に挿入したスイッチング
素子を導通させることにより逆導通ＧＴＯを実現するよ
うにしたものである。The present invention realizes reverse conduction GTO by detecting the voltage between the anode and cathode of the GTO, and when the anode potential becomes negative with respect to the cathode potential, conducts the switching element inserted between the gate and cathode of the GTO. It was designed to do so.
以下１本発明の一実施例を第１図により説明する。 An embodiment of the present invention will be described below with reference to FIG.
ＧＴＯｌの７ノード・カソード間にダイオード４．５及
びトランジスタ６を直列に接続する。ここでダイオード
４のカソード側の電位は、ＧＴＯｌがオフ状態時では、
ＧＴＯｌのアノード電位と同一であり、ＧＴＯＩがオン
状態時はＧＴＯのオン電圧と同一であり５回生時はＧＴ
Ｏｌのカソード電位より低くなる。A diode 4.5 and a transistor 6 are connected in series between the 7th node and the cathode of GTOl. Here, the potential on the cathode side of the diode 4 is as follows when GTOl is in the off state.
It is the same as the anode potential of GTOl, and when GTOI is on, it is the same as the on-voltage of GTO, and during the 5th regeneration, GT
It becomes lower than the cathode potential of Ol.
ＧＴＯｌと逆並列に接続されるダイオード２はフリーホ
イーリングダイオードと呼ばれ、負荷３からの回生電流
や循環電流を流す、上述かられかるように回生時はダイ
オード４のカソード電位はＧＴＯｌのカソード電位より
低くなり、ダイオード４の漏れ電流がトランジスタ６の
エミッタ・ペース、ダイオード５を通って流れる。これ
により。Diode 2, which is connected in antiparallel to GTOl, is called a freewheeling diode, and allows the regenerative current and circulating current from the load 3 to flow.As can be seen from the above, during regeneration, the cathode potential of diode 4 is the same as the cathode potential of GTOl. The leakage current of diode 4 flows through the emitter paste of transistor 6, diode 5. Due to this.
トランジスタ６はオン状態となり、さらにトランジスタ
７をオン状態へ導く。トランジスタ７はＧ Ｔ Ｏ１の
ゲート・カソード間に挿入してあり、このトランジスタ
からＧＴＯｌのゲート・７ノードを通って電流を流すこ
とができる。トランジスタ７は、ＧＴＯｌの耐圧は不要
であり低耐圧（例えば５０Ｖ程度）で十分である。又、
並列接続も十分可能であり、トランジスタ１ヶ当りの電
流定格は小さいものを選択できる。Transistor 6 is turned on, which further leads transistor 7 to be turned on. Transistor 7 is inserted between the gate and cathode of GTO1, and current can flow from this transistor through the gate and node 7 of GTO1. The transistor 7 does not need to have the withstand voltage of GTOl, and a low withstand voltage (for example, about 50 V) is sufficient. or,
Parallel connection is also fully possible, and a transistor with a small current rating per transistor can be selected.
本発明の一実施例によれば、フリーホイーリングダイオ
ードの効果がある。According to one embodiment of the invention, there is a freewheeling diode effect.
本発明によれば、逆導通ＧＴＯが実現できるので、従来
用いていたフリーホイ−リグダイオードを省略すること
ができる。According to the present invention, since a reverse conduction GTO can be realized, the conventionally used freewheeling diode can be omitted.
第１図は本発明の一実施例の回路構成図、第２図は電圧
形インバータ主回路図、第３図はアノードショートエミ
ッタ形ＧＴＯ模式図である。FIG. 1 is a circuit configuration diagram of an embodiment of the present invention, FIG. 2 is a main circuit diagram of a voltage source inverter, and FIG. 3 is a schematic diagram of an anode short emitter type GTO.
Claims (1)
ーンオフサイリスタにおいて、ゲート・カソード間にス
イッチング素子を挿入することを特徴とするゲートター
ンオフサイリスタ。1. A gate turn-off thyristor having an anode short emitter structure, characterized in that a switching element is inserted between the gate and the cathode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26075684A JPS61140174A (en) | 1984-12-12 | 1984-12-12 | Gate turn-off thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26075684A JPS61140174A (en) | 1984-12-12 | 1984-12-12 | Gate turn-off thyristor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61140174A true JPS61140174A (en) | 1986-06-27 |
Family
ID=17352292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26075684A Pending JPS61140174A (en) | 1984-12-12 | 1984-12-12 | Gate turn-off thyristor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61140174A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01278257A (en) * | 1988-04-28 | 1989-11-08 | Fuji Electric Co Ltd | Gate driving circuit for gto thyristor |
| US5156130A (en) * | 1989-12-28 | 1992-10-20 | Hitachi, Ltd. | Fuel injection system |
| FR2688941A1 (en) * | 1992-03-20 | 1993-09-24 | Sgs Thomson Microelectronics | ALTERNATIVE VOLTAGE SWITCH TRIGGERED ON A SPECIFIED ALTERNATION AND PERIOD CONDUCTION. |
-
1984
- 1984-12-12 JP JP26075684A patent/JPS61140174A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01278257A (en) * | 1988-04-28 | 1989-11-08 | Fuji Electric Co Ltd | Gate driving circuit for gto thyristor |
| US5156130A (en) * | 1989-12-28 | 1992-10-20 | Hitachi, Ltd. | Fuel injection system |
| FR2688941A1 (en) * | 1992-03-20 | 1993-09-24 | Sgs Thomson Microelectronics | ALTERNATIVE VOLTAGE SWITCH TRIGGERED ON A SPECIFIED ALTERNATION AND PERIOD CONDUCTION. |
| US5471074A (en) * | 1992-03-20 | 1995-11-28 | Sgs-Thomson Microelectronics S.A. | A.c. switch triggered at a predetermined half-period |
| US5569940A (en) * | 1992-03-20 | 1996-10-29 | Sgs-Thomson Microelectronics S.A. | AC switch triggered at a predetermined half-period |
| US5596292A (en) * | 1992-03-20 | 1997-01-21 | Sgs-Thomson Microelectronics S.A. | A.C. switch triggered at a predetermined half-period |
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