JPS61139742A - Ion milling apparatus - Google Patents
Ion milling apparatusInfo
- Publication number
- JPS61139742A JPS61139742A JP26077684A JP26077684A JPS61139742A JP S61139742 A JPS61139742 A JP S61139742A JP 26077684 A JP26077684 A JP 26077684A JP 26077684 A JP26077684 A JP 26077684A JP S61139742 A JPS61139742 A JP S61139742A
- Authority
- JP
- Japan
- Prior art keywords
- ion gun
- anode
- specimen
- sample
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/32—Polishing; Etching
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Sampling And Sample Adjustment (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、透過電顕試料作製用のイオンミリング装置に
係り、エツチング面積の調節に好適な方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to an ion milling apparatus for preparing a transmission electron microscopy sample, and relates to a method suitable for adjusting the etching area.
従来のイオンミリング装置では、イオンガンは真空チャ
ンバー内に固定されておりイオンを照射した状態で試料
に対する距離の調節は不可能であった。イオンガンから
のイオンビームの拡がりはカソード２及びアノード３の
形状寸法に左右されるが、その発散角は１５〜２５°程
度である。イオンビームの強さは放電室内のガス、たと
えばＡｒガス等の濃度またはアノード３に印加する電圧
で調節されるが、イオンガンから試料までの距離が固定
されている従来装置では照射面積の調節は出来なかった
。このため小さい試料や、均−質の金属試料など狭い面
積のエツチングで十分な試料にも広い面積に照射を行い
、余計な部分までエツチングする結果となり、これはガ
ス、電力など資源の無駄であり又時間の無駄でもあった
。また試料の照射面が小さい場合は、イオンビームは試
料を外れ試料以外のホルダ、試料固定の接着部等に衝突
しホルダの損傷や試料のはがれを起こしてしまうという
欠点があった。In conventional ion milling devices, the ion gun is fixed in a vacuum chamber, and the distance to the sample cannot be adjusted while irradiating ions. The spread of the ion beam from the ion gun depends on the shapes and dimensions of the cathode 2 and anode 3, but the divergence angle is about 15 to 25 degrees. The intensity of the ion beam is adjusted by the concentration of the gas in the discharge chamber, such as Ar gas, or by the voltage applied to the anode 3, but with conventional devices where the distance from the ion gun to the sample is fixed, the irradiation area cannot be adjusted. There wasn't. For this reason, even if a small sample or a homogeneous metal sample is sufficient for etching a narrow area, a wide area is irradiated and unnecessary parts are etched, which is a waste of resources such as gas and electricity. It was also a waste of time. Furthermore, when the irradiation surface of the sample is small, the ion beam leaves the sample and collides with a holder other than the sample, an adhesive part for fixing the sample, etc., resulting in damage to the holder and peeling of the sample.
本発明の目的は、試料とイオンガンとの距離を可変にす
ることで、種々様々な試料により適した状条でエツチン
グを行うことにより、ガス、電力等の節約および最短時
間でエツチング出来るイオンミリング装置を提供するこ
とにある。The object of the present invention is to provide an ion milling device that can save gas, electricity, etc., and perform etching in the shortest possible time by making the distance between the sample and the ion gun variable and performing etching in a condition that is more suitable for various samples. Our goal is to provide the following.
透過電顕試料はセラミックなど一様性が高く広い視野の
欲しいものから金属などある特定の所を見たいものまで
種々多様であり１本発明ではイオンガンと試料の距離を
可変とすることで、イオンビームの強さだけでなく、照
射面積も調節可能としたことにより、各試料により適し
た、あるいは各エツチング段階により適した状条でエツ
チングを行えるように構成したものである。Transmission electron microscopy samples are diverse, ranging from ceramics that are highly uniform and require a wide field of view to those that require a specific part of the metal, such as metals.1 In the present invention, by making the distance between the ion gun and the sample variable, By making it possible to adjust not only the intensity of the beam but also the irradiation area, it is possible to perform etching in a shape more suitable for each sample or for each etching step.
以下、本発明の一実施例を第１図により説明する。イオ
ンガン２は真空チャンバー１に設けられたイオンガン導
入円筒を通し前後に移動可能となっている。真空チャン
バー１は真空排気ポンプ６で−１０−”１１度の真空に
なっている。イオンガン２の内部にはアノード３があり
３〜５ＫＶの高圧が印加されていてイオンガン本体２と
はガイシ７で絶縁されている。アノード３迄Ａｒガスを
導入し、ここでイオン化し加速し試料台５上に固定され
ている試料に照射する。この様子はＩＩＩｔ察窓４を通
し見ることができる。イオンガンは２台設けられており
試料の表裏同時にエツチング出来る。試料との距離を外
部から一目で分かる様に目盛をうっておき試料にあわせ
て調節する。試料を速く薄くするにはイオンビームと試
料の角度は３０〜４０″′がよく、仕上げのエツチング
はこの角度を１０〜２０°に小さくする。イオンビーム
は低角度では試料面上の広がりが大きくなるので必要に
応じ充分接近させ、エツチング中試料台５を回転させれ
ば小面積一様に薄膜化が可能になる。An embodiment of the present invention will be described below with reference to FIG. The ion gun 2 is movable back and forth through an ion gun introduction cylinder provided in the vacuum chamber 1. The vacuum chamber 1 is evacuated to -10-11 degrees by a vacuum pump 6.The ion gun 2 has an anode 3 inside, to which a high pressure of 3 to 5 KV is applied, and is connected to the ion gun body 2 by an insulator 7. It is insulated.Ar gas is introduced up to the anode 3, where it is ionized, accelerated, and irradiated onto the sample fixed on the sample stage 5.This situation can be seen through the IIIt observation window 4.The ion gun Two units are installed, allowing etching on the front and back sides of the sample at the same time.A scale is provided so that the distance to the sample can be seen at a glance from the outside, and it is adjusted according to the sample.To thin the sample quickly, the angle between the ion beam and the sample is adjusted. is preferably 30-40'', and the final etching reduces this angle to 10-20°. Since the ion beam spreads out on the sample surface at a low angle, it is possible to make a thin film uniformly over a small area by bringing the ion beam close enough as necessary and rotating the sample stage 5 during etching.
以上説明した様に１本発明によれば、イオンビームの強
さを調節すると同時に照射面積の調節も行うことにより
、それぞれの試料の各エツチング段１階により適した条
件でエツチングを行うことが出きる。このためガス、電
力等の節減及びエツチング時間の短縮と効果は極めて大
である。As explained above, according to the present invention, by adjusting the ion beam intensity and simultaneously adjusting the irradiation area, it is possible to perform etching under conditions more suitable for each first etching step of each sample. Wear. Therefore, the effects of saving gas, electricity, etc. and shortening etching time are extremely large.
第１図は本発明の一実施例の構成図である。
１・・・イオンミリング装置真空チャンバ、２・・・イ
オンガン本体（カソード）、３・・・アノード、４・・
・観ｆｓ窓、５・・・試料台、６・・・真空排気ポンプ
、７・・・絶縁ガイシ。FIG. 1 is a block diagram of an embodiment of the present invention. 1... Ion milling device vacuum chamber, 2... Ion gun body (cathode), 3... Anode, 4...
・Viewing fs window, 5...sample stand, 6...vacuum pump, 7...insulation insulator.
Claims (1)
に移動可能なイオンガンを１個若しくは複数個備えて、
試料に対する距離を外部から調節可能なことを特徴とす
るイオンミリング装置。1. Equipped with one or more ion guns that can be freely moved inside the introduction cylinder provided on the wall of the vacuum chamber,
An ion milling device characterized in that the distance to the sample can be adjusted from the outside.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26077684A JPS61139742A (en) | 1984-12-12 | 1984-12-12 | Ion milling apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26077684A JPS61139742A (en) | 1984-12-12 | 1984-12-12 | Ion milling apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61139742A true JPS61139742A (en) | 1986-06-27 |
Family
ID=17352566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26077684A Pending JPS61139742A (en) | 1984-12-12 | 1984-12-12 | Ion milling apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61139742A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009025133A (en) * | 2007-07-19 | 2009-02-05 | Nippon Steel Corp | Sample preparing method and sample preparing apparatus |
-
1984
- 1984-12-12 JP JP26077684A patent/JPS61139742A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009025133A (en) * | 2007-07-19 | 2009-02-05 | Nippon Steel Corp | Sample preparing method and sample preparing apparatus |
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