JPS63271856A - Ion beam vapor deposition device - Google Patents
Ion beam vapor deposition deviceInfo
- Publication number
- JPS63271856A JPS63271856A JP10669587A JP10669587A JPS63271856A JP S63271856 A JPS63271856 A JP S63271856A JP 10669587 A JP10669587 A JP 10669587A JP 10669587 A JP10669587 A JP 10669587A JP S63271856 A JPS63271856 A JP S63271856A
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- deceleration electrode
- electrode
- angle
- sample stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 52
- 238000007740 vapor deposition Methods 0.000 title 1
- 230000008020 evaporation Effects 0.000 claims description 10
- 238000001704 evaporation Methods 0.000 claims description 10
- 230000005684 electric field Effects 0.000 claims description 7
- 239000012212 insulator Substances 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 229910001460 tantalum ion Inorganic materials 0.000 description 2
- 241000600169 Maro Species 0.000 description 1
- 241000283973 Oryctolagus cuniculus Species 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 210000003746 feather Anatomy 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052602 gypsum Inorganic materials 0.000 description 1
- 239000010440 gypsum Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
この発明は、半導体集積回路等の薄膜を形成するイオン
ビーム蒸着装置に関し、さらに詳しくは、２種類のイオ
ンビームを低エネルギーで同時に試料に照射する方法を
可能にする装置に関する。[Detailed Description of the Invention] Industrial Application Field This invention relates to an ion beam evaporation apparatus for forming thin films of semiconductor integrated circuits, etc., and more specifically, a method for simultaneously irradiating a sample with two types of ion beams at low energy. The present invention relates to a device that enables this.
従来の技術
イオンビーム蒸着法のために数ｅＶから数１００ｅＶの
低エネルギーイオンビームを得る１つの手法として、高
電圧で引き出されたイオンビームを減速する方法がある
。BACKGROUND OF THE INVENTION One method for obtaining a low-energy ion beam of several eV to several hundred eV for ion beam evaporation is to decelerate an ion beam extracted at a high voltage.
従来のこの種のイオンビーム蒸着装置は、例えば、Ｊ、
Ｈ，Ｆｒｅｅｍａｎ、ａｔ ａｌ、：Ｎｕｃｌ、Ｉｎ５
ｔｒ、ａｎｄＭｅ ｔ ｈ、ぎ０１．１３５（１９７６
）Ｐ、１ 、 に示されている。第４図にＦｒｅｅｍ
ａｎ らが設計したイオンビームの減速系を示す。Conventional ion beam evaporation apparatuses of this type include, for example, J,
H, Freeman, at al.: Nucl, In5
tr, and Me th, Gi 01.135 (1976
) is shown in P,1,. Free in Figure 4
This figure shows the ion beam deceleration system designed by An et al.
第４図において、１は真空室、この真空室１の内部には
真空室１とは電気的に絶縁された試料台２、試料台の手
前にはアース電位減速電極３、減速電極３の手前にはア
ース電位のビーム制限電極４が取り付けられている。ま
たそれぞれの電極にはイオンビーム５が通過できる穴が
開けである。In Fig. 4, 1 is a vacuum chamber, inside this vacuum chamber 1 there is a sample stage 2 electrically insulated from the vacuum chamber 1, a ground potential deceleration electrode 3 in front of the sample stage, and a ground potential deceleration electrode 3 in front of the deceleration electrode 3. A beam limiting electrode 4 at ground potential is attached to. Further, each electrode has a hole through which the ion beam 5 can pass.
以上のように構成されたイオンビーム蒸着装置について
、以下その動作について説明する。例えば、１２ＫｅＶ
のエネルギーを持つイオンビーム６が試料台２に入射
してきた時、減速電源６により、試料台２電位を１１．
９５ＫＶにすると、試料台２のリング部７と減速電極３
との間で形成される電界によってイオンピーＡ５は減速
され、試料台２上では５０ｅＶのエネルギーになる。ま
た、イオンビーム６の空間電荷による発散を抑えるため
に、第５図に示したように、試料台２のリング部８の形
状を変えることによシ、減速電極３とリング部８が形成
する電界により、イオンビーム６は試料台２上で集束す
る。また、第６図に示したように試料台２と減速電極３
とをイオンビーム５の入射方向に対して傾ける事によシ
、イオンビーム５を試料台２上で曲げる事ができる。The operation of the ion beam evaporation apparatus configured as described above will be described below. For example, 12KeV
When the ion beam 6 with an energy of
When the voltage is set to 95KV, the ring part 7 of the sample stage 2 and the deceleration electrode 3
The ion P A5 is decelerated by the electric field formed between the two and reaches an energy of 50 eV on the sample stage 2. In addition, in order to suppress the divergence of the ion beam 6 due to space charges, as shown in FIG. The ion beam 6 is focused on the sample stage 2 by the electric field. In addition, as shown in FIG. 6, the sample stage 2 and deceleration electrode 3 are
By tilting the ion beam 5 with respect to the incident direction of the ion beam 5, the ion beam 5 can be bent on the sample stage 2.
発明が解決しようとする問題点
しかしながら上記のような構成では、減速電極と試料台
とを一組として動かしてイオンビーム軌道を変化させる
ので、一方向のビームに対してだけ減速電界を自由に変
えることしかできないので、２方向から入射してくる２
種類のイオンビームを同時に減速して、試料上でスポッ
トを合わせることは困難であった。Problems to be Solved by the Invention However, in the above configuration, the deceleration electrode and sample stage are moved as a set to change the ion beam trajectory, so the deceleration electric field can be freely changed only for the beam in one direction. Since the only thing that can be done is
It has been difficult to simultaneously decelerate different ion beams and align their spots on the sample.
問題点を解決するための手段
本発明は上記問題点を解決する技術的な手段として、高
電圧減速電極が２本のイオンビームが成す角度の２等分
線上で折れ曲がるとともにアース電位減速電極に対する
角度が上記２等分線を中心として左右同じだけ連続的に
変化するようにしたものである。Means for Solving the Problems The present invention provides a technical means for solving the above-mentioned problems, in which the high voltage deceleration electrode is bent on the bisector of the angle formed by the two ion beams, and the angle with respect to the ground potential deceleration electrode is bent. is made to change continuously by the same amount on the left and right sides with the bisector as the center.
作 用 この技術的手段による作用は次のようになる。For production The effect of this technical means is as follows.
すなわち、高電圧減速電極のアース電位減速電極に対す
る角度を変えることにより、ビームに対する減速電界の
均一性が変化するために、２方向から入射してくるビー
ムを偏向させることができ、試料台上でビームスポット
を合わせることができる。In other words, by changing the angle of the high-voltage deceleration electrode with respect to the earth potential deceleration electrode, the uniformity of the deceleration electric field for the beam changes, so it is possible to deflect the beam that is incident from two directions. Beam spots can be aligned.
実施例
以下、本発明の一実施例を添付図面にもとづいて説明す
る。Embodiment Hereinafter, one embodiment of the present invention will be described based on the accompanying drawings.
第１図において９は真空室、この真空室９内部には真空
室９とは電気的に絶縁された試料台１０、試料台１０の
手前には試料台と同じ電位の高電圧減速電極１１１．高
電圧減速電極１１の手前にはアース電位減速電極１２、
アース電位減速電極１２の手前にはアース電位のビーム
制限電極１３が取り付けられている。In FIG. 1, reference numeral 9 denotes a vacuum chamber, inside the vacuum chamber 9 there is a sample stage 10 electrically insulated from the vacuum chamber 9, and in front of the sample stage 10 there is a high voltage deceleration electrode 111 with the same potential as the sample stage. In front of the high voltage deceleration electrode 11, a ground potential deceleration electrode 12,
A beam limiting electrode 13 at ground potential is attached in front of the ground potential deceleration electrode 12 .
また、それぞれの電極は試料台上で出合うようにイオン
ビームＡ１４及びイオンビームＢ１５が通過できる２個
の穴が開けてあり、それぞれのイオンビームの入射方向
に垂直になるように、くの字型に曲げである。In addition, each electrode has two holes through which the ion beam A14 and ion beam B15 can pass so that they meet on the sample stage, and the two holes are made in a dogleg shape perpendicular to the direction of incidence of each ion beam. It is bent.
また、高電圧減速電極１１はイオンビームＡ１４とイオ
ンビームＢ１１５の入射方向の成す角度の２等分線の方
向のＸ線上で２枚に分かれておシ、蝶番１６で連結され
ている。高電圧減速電極１１を構成する２枚の板の一方
は、真空室９に真空を保つように取り付けられた直線導
入機１７に絶縁棒１８を介して連結されており、もう一
方の板は試料台１０に装着しであるレール１９の上を自
由にり付けられた絶縁物ガイド棒２ｏにて移動可能に案
内されている。すなわち、高電圧減速電極１１は直線導
入機１７をＹ方向に動かすことにより、アース電位減速
電極１２の２個の穴に対してＸ軸を中心に対称にかつ等
しい角度を形成するように、ガイド棒２０に添って折れ
曲がる。また、試料台１０及び高電圧減速電極１１は電
源２１によって、イオンビームの最終エネルギーを決め
る電位に制御される。Further, the high voltage deceleration electrode 11 is divided into two pieces along the X-ray in the direction of the bisector of the angle formed by the incident directions of the ion beam A 14 and the ion beam B 115, and is connected by a hinge 16. One of the two plates constituting the high-voltage deceleration electrode 11 is connected via an insulating rod 18 to a linear introduction device 17 attached to the vacuum chamber 9 to maintain a vacuum, and the other plate is connected to the sample sample. It is movably guided by an insulating guide rod 2o freely attached on a rail 19 attached to the stand 10. That is, by moving the linear introduction device 17 in the Y direction, the high voltage deceleration electrode 11 is guided so as to form an equal angle with the two holes of the earth potential deceleration electrode 12 symmetrically about the X axis. It is bent along the rod 20. Further, the sample stage 10 and the high voltage deceleration electrode 11 are controlled by a power source 21 to a potential that determines the final energy of the ion beam.
以上のように構成されたイオンビーム蒸着装置について
、第１図、第２図及び第３図を用いてその動作を説明す
る。まず第２図はタンタルイオンビーム゛２２及び酸素
イオンビーム２３の最終エネルギーが５０ｅＶ （１２
ＫｅＶ のイオンビームに対して試料台１ｏの電位を＋
１１．９５ＫＶにしである）、電流量がそれぞれ２０μ
Ａ、５０μＡの時のビーム軌道のシミュレーション結果
である。The operation of the ion beam evaporation apparatus configured as described above will be explained with reference to FIGS. 1, 2, and 3. First of all, FIG. 2 shows that the final energy of the tantalum ion beam 22 and the oxygen ion beam 23 is 50 eV (12
The potential of the sample stage 1o is set to + for the KeV ion beam.
11.95KV), and the current amount is 20μ each.
A: Simulation results of beam trajectory at 50 μA.
高電圧減速電極１１とアース電位減速電極１２が平行の
時は高電圧減速電極１１の両方の穴にはいり込んだ電界
２４の傾斜のためビームが試料台１０の手前で曲げられ
る。When the high voltage deceleration electrode 11 and the earth potential deceleration electrode 12 are parallel, the beam is bent in front of the sample stage 10 due to the inclination of the electric field 24 that has entered both holes of the high voltage deceleration electrode 11.
第３図は第２図でのビームの曲がりを補正するために高
電圧減速電極１１をアース電位減速電極１２に対して傾
けた時のシミュレーション結果であり、高電圧減速電極
１１の角度を変えることにより、タンタルイオンビーム
２２と酸素イオンビーム２３が、試料台１０上で出合わ
せることができる。すなわち、高電圧減速電極１１とア
ース電位減速電極１２の間にかかる電界を不均一にする
ことにより、ビーム軌道を補正することができる。FIG. 3 shows the simulation results when the high voltage deceleration electrode 11 is tilted with respect to the ground potential deceleration electrode 12 in order to correct the beam bending in FIG. 2, and the angle of the high voltage deceleration electrode 11 can be changed. Accordingly, the tantalum ion beam 22 and the oxygen ion beam 23 can meet on the sample stage 10. That is, by making the electric field applied between the high voltage deceleration electrode 11 and the earth potential deceleration electrode 12 non-uniform, the beam trajectory can be corrected.
また、第１図において真空室９の外部から直線導入機１
７を使って高電位減速電極１１の角度を連続的に変えら
れるようにすることにより、イオンビームＡ１４とイオ
ンビームＢ１５の電流量やエネルギーをそれぞれ独立に
変化させても両方のビームが試料台１０上で出合う所を
見つけることができる。In addition, in Fig. 1, the linear introduction machine 1 is
By making it possible to continuously change the angle of the high-potential deceleration electrode 11 using You can find where to meet above.
発明の効果
以上のように本発明は、２方向から入射して来るイオン
ビームを同時に減速して試料に堆積させる時に、高電圧
減速電極のアース電位減速電極に対する角度を真空室外
側から２本のビームに対して相対的に変化させることに
より、試料台上でのイオンビームのスポットを合わせる
ことができる。Effects of the Invention As described above, the present invention allows the angle of the high-voltage deceleration electrode to the earth potential deceleration electrode to be adjusted by changing the angle of the high-voltage deceleration electrode to the ground potential deceleration electrode when the ion beams incident from two directions are simultaneously decelerated and deposited on the sample. By changing it relative to the beam, the spot of the ion beam on the sample stage can be aligned.
これによりイオンビームによる２元物質の合成が可能に
なる。また、例えば組成比はビーム量を変えることによ
りコントロールできるので、高品質の２元物質膜を形成
することができる。This makes it possible to synthesize binary substances using an ion beam. Further, since the composition ratio can be controlled by changing the beam amount, for example, a high quality binary material film can be formed.
第１図は本発明の実施例におけるイオンビーム蒸着装置
の断面図、第２図及び第３図は第１図の動作説明図、第
４図は従来のイオンビーム蒸着装置の断面図、第６図及
び第６図は第４図の動作説明図である。
９・・・・・・真空室、１０・・・・・・試料台、１１
・・・・・・高電圧減速電極、１２・・・・・・アース
電位減速電極、１４・・・・・・イオンビームＡ、１６
・・・・・・イオンビームＢ。
１７・・・・・・直線導入機。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名９−
Ｘ宇室
ｔｏ−Ｈｒ４６
１ｆ−壬電Ａ５べ還覧兎
ｆ２・−アースを位“
ｔ３−げ−７，＠Ｐ￥膏砲
１４−−−イχンビー４Ａ
ｆ７−・一連麿に専へ羽（
ｊＢ−−Ｈ！を捧
１ｑ−−−Ｌ−ルFIG. 1 is a sectional view of an ion beam evaporation apparatus according to an embodiment of the present invention, FIGS. 2 and 3 are explanatory diagrams of the operation of FIG. 1, FIG. 4 is a sectional view of a conventional ion beam evaporation apparatus, and This figure and FIG. 6 are explanatory diagrams of the operation of FIG. 4. 9...Vacuum chamber, 10...Sample stand, 11
......High voltage deceleration electrode, 12...Earth potential deceleration electrode, 14...Ion beam A, 16
...Ion beam B. 17...Linear introduction machine. Name of agent: Patent attorney Toshio Nakao and 1 other person9-
X Umuro to-Hr46 1f-Jimden A5 return view rabbit f2・-earth t3-Ge-7, @P￥Gypsum gun 14--Ichimbee 4A f7-・Sequential Maro to special feather (Dedicate jB--H! 1q--L-le
Claims (3)
は電気的に絶縁された試料台と、２方向から試料台上で
出合うように入射される２本の正イオンビームと、試料
台の手前にあって前記２本のイオンビームが通過できる
ように２個の穴が開けられた高電圧減速電極と、その手
前に前記２本のビームが通過できるように２個の穴が開
けられたくの字型のアース電位減速電極と、イオンビー
ムの最終エネルギーを決めるために試料台と高電圧減速
電極にイオンビームを減速する電位を印加する手段と、
高電圧減速電極とアース電位減速電極との間で減速電界
が印加できる手段とを備え、上記高電圧減速電極は前記
２本のイオンビームが成す角度の２等分線上で折れ曲が
るとともにアース電位減速電極に対する角度が前記２等
分線を中心として左右同じだけ連続的に変化するように
構成したイオンビーム蒸着装置。(1) A vacuum chamber, a sample stage installed inside the vacuum chamber and electrically insulated from the vacuum chamber, two positive ion beams incident from two directions so as to meet on the sample stage, and a sample stage. A high-voltage deceleration electrode with two holes in front of the table so that the two ion beams can pass through, and a high-voltage deceleration electrode with two holes in front of it so that the two beams can pass through. a dogleg-shaped ground potential deceleration electrode; means for applying a potential to decelerate the ion beam to the sample stage and the high voltage deceleration electrode to determine the final energy of the ion beam;
means for applying a deceleration electric field between the high voltage deceleration electrode and the earth potential deceleration electrode, the high voltage deceleration electrode being bent on the bisector of the angle formed by the two ion beams, and the earth potential deceleration electrode An ion beam evaporation apparatus configured such that an angle with respect to the bisector continuously changes by the same amount on the left and right sides with the bisector as the center.
導入機にてアース電位減速電極に対する角度が変わるよ
うに構成されている特許請求の範囲第１項記載のイオン
ビーム蒸着装置。(2) The ion beam evaporation apparatus according to claim 1, wherein the high voltage deceleration electrode is configured so that its angle with respect to the earth potential deceleration electrode can be changed by a linear introduction device provided outside the vacuum chamber.
度以上８０度以下である特許請求の範囲第１項記載のイ
オンビーム蒸着装置。(3) The angle made by the two ion beams on the sample stage is 10
The ion beam evaporation apparatus according to claim 1, wherein the angle is greater than or equal to 80 degrees.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10669587A JPH088084B2 (en) | 1987-04-30 | 1987-04-30 | Ion beam vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10669587A JPH088084B2 (en) | 1987-04-30 | 1987-04-30 | Ion beam vapor deposition equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63271856A true JPS63271856A (en) | 1988-11-09 |
| JPH088084B2 JPH088084B2 (en) | 1996-01-29 |
Family
ID=14440166
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10669587A Expired - Fee Related JPH088084B2 (en) | 1987-04-30 | 1987-04-30 | Ion beam vapor deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH088084B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006054528A1 (en) * | 2004-11-19 | 2006-05-26 | Ulvac Co., Ltd | Ion implantation device |
| JP2022510432A (en) * | 2018-12-07 | 2022-01-26 | アプライド マテリアルズ インコーポレイテッド | Equipment and Techniques for Inclined Etching Using Multi-Electrode Extraction Sources |
| US11715621B2 (en) | 2018-12-17 | 2023-08-01 | Applied Materials, Inc. | Scanned angled etching apparatus and techniques providing separate co-linear radicals and ions |
| US11967489B2 (en) | 2021-10-29 | 2024-04-23 | Applied Materials, Inc. | Apparatus and techniques for angled etching using multielectrode extraction source |
-
1987
- 1987-04-30 JP JP10669587A patent/JPH088084B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006054528A1 (en) * | 2004-11-19 | 2006-05-26 | Ulvac Co., Ltd | Ion implantation device |
| KR100848959B1 (en) * | 2004-11-19 | 2008-07-29 | 가부시키가이샤 아루박 | Ion implantation device |
| US7511288B2 (en) | 2004-11-19 | 2009-03-31 | Ulvac Co., Ltd | Ion implantation device |
| JP2022510432A (en) * | 2018-12-07 | 2022-01-26 | アプライド マテリアルズ インコーポレイテッド | Equipment and Techniques for Inclined Etching Using Multi-Electrode Extraction Sources |
| US11715621B2 (en) | 2018-12-17 | 2023-08-01 | Applied Materials, Inc. | Scanned angled etching apparatus and techniques providing separate co-linear radicals and ions |
| US11967489B2 (en) | 2021-10-29 | 2024-04-23 | Applied Materials, Inc. | Apparatus and techniques for angled etching using multielectrode extraction source |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH088084B2 (en) | 1996-01-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |