JP2018022701A - Ion gun, ion milling device, and ion milling method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an ion gun of a Penning discharge system, capable of obtaining a high milling speed, an ion milling device having the same, and an ion milling method.SOLUTION: An ion gun 1 includes: a cathode 12; an anode 13 provided at the inside of the ion gun and having an inside diameter of 3.5 mm or more and less than 4 mm; an ionization chamber 18 which has magnetic field generation means using a permanent magnet 14 that has a maximum energy product of 110-191 kJ/m3 and in which ions are generated by the collision of electrons against gas supplied from the outside; and an accelerating electrode 15 accelerating ions emitted from the ionization chamber 18 at a voltage of 5 kV or more and 8 kV or less.SELECTED DRAWING: Figure 2

Description

  The present invention relates to an ion gun for producing a sample, an ion milling apparatus having the ion gun, and an ion milling method.

  The ion milling method is a processing method in which a sample is cut using a sputtering phenomenon in which accelerated ions collide with a sample and the ions repel atoms and molecules. The sample to be processed can be processed with a smooth cross section by placing a mask serving as an ion beam shielding plate on the upper surface and sputtering the protruding portion from the mask end surface. This method is used for metals, glass, ceramics, electronic components, composite materials, and the like.

  For example, in an electronic component, it is used for applications such as internal structure, cross-sectional shape, film thickness evaluation, crystal state, failure and analysis of foreign substance cross-section. In addition, it is used as a cross-sectional sample preparation method for acquiring morphological images, sample composition images, channeling images, X-ray analysis, crystal orientation analysis, and the like by various measuring apparatuses such as a scanning electron microscope.

  Some ion milling devices as described above use a small Penning discharge type ion gun with a simple configuration as an ion gun. The basic structure of a Penning discharge type ion gun is that a gas supply mechanism that supplies gas to the inside of the ion gun, an anode that is arranged inside the ion gun and that is applied with a positive voltage, a cathode that generates a potential difference between the anode, and a permanent magnet With. The Penning ion gun is characterized in that a high milling speed resulting from the high energy of the ion beam can be obtained. For example, Patent Document 1 discloses a method in which the current value of an ion beam emitted from an ion gun is always kept at a maximum value in order to maintain a high milling speed.

Japanese Laid-Open Patent Publication No. 2007-48588

  With recent advances in ion milling equipment, the market has expanded greatly. For this reason, it is desired to develop an ion gun that can obtain a higher milling speed than before, depending on the application field. As an example, there is an analysis of three-dimensional mounting using a through silicon via (TSV) that is attracting attention in the semiconductor field. As described above, in order to process the laminated thick sample, there is a problem that the processing time is large and the operating rate of the apparatus is lowered at about 300 μm per hour which is a standard of the conventional milling speed.

  On the other hand, as described in Patent Document 1, it has been considered that the current value of the ion beam emitted from the ion gun must always be kept large in order to increase the milling speed in the conventional method. Therefore, a high plasma density is indispensable, and it has been considered important to take a long electron orbit by forming a magnetic field with a high magnetic flux density.

  However, the inventor of the present application repeatedly conducted experiments in order to achieve the above object, and obtained the following knowledge.

  In order to increase the amount of ions emitted from the ion gun in a penning discharge type ion gun, a permanent magnet having a specific magnetic flux density is used in the configuration of the ion gun, an ion beam profile is ideally formed, and an acceleration electrode It has been found that it is important to control the region of the ionization chamber within a range that can be discharged from the ion gun without colliding with the peripheral portion of the outlet hole.

  This is considered to be due to a decrease in the amount of ions emitted from the ion gun when the emitted ions collide with the peripheral portion of the accelerating electrode outlet hole in an ion gun with an excessive magnetic field or an excessive ionization chamber region. . As a result, the amount of ions emitted from the ion gun can be dramatically increased as compared with the invention in which the current amount of the ion beam is always kept large as in Patent Document 1.

  As described above, the invention using the unique knowledge of the present inventor has never been made. Accordingly, the present invention provides a Penning discharge type ion gun and an ion milling apparatus having the same that can obtain a significantly higher milling speed than the conventional one based on such experimental results and the inventor's unique knowledge obtained from the experimental results. We propose an ion milling method. The present invention has made it possible to solve new problems that have spread with the market.

As a specific aspect, the ion milling apparatus of the present invention is an ion generation unit that generates electrons by colliding electrons with a gas supplied from the outside, and an electrode that accelerates the ions emitted from the ion generation unit. And an accelerating electrode to which a voltage of 5 kV or more and 8 kV or less is applied. In the ion milling apparatus that irradiates the sample with the accelerated ions and processes the sample, the ion generation unit includes a cathode from which the electrons are emitted, A magnetic field is provided inside the ion generation unit by an anode provided inside the ion generation unit and having an inner diameter of 3.5 mm or more and less than 4 mm and a magnet having a maximum energy product in the range of 110 kJ / m ³ to 191 kJ / m ^3. And a magnetic field generating section for generating

As another specific aspect, the ion source according to the present invention includes an ion generator that generates electrons by colliding electrons with a gas supplied from the outside, and accelerates the ions emitted from the ion generator. An ion source used for an ion milling apparatus that irradiates a sample with the accelerated ions and processes the sample, wherein the ion source includes the electron By a cathode having a maximum energy product in the range of 110 kJ / m ³ to 191 kJ / m ³ and a cathode provided inside the ion generator and having an inner diameter of 3.5 mm or more and less than 4 mm. And a magnetic field generation unit that generates a magnetic field inside the ion generation unit.

  As another specific embodiment, the ion milling device of the present invention includes an ion generation unit that generates electrons by colliding electrons with a gas supplied from the outside, and the ions emitted from the ion generation unit. And an accelerating electrode in which a voltage of 5 kV or more and 8 kV or less is applied to the electrode to be accelerated. In the ion milling apparatus that irradiates the sample with the accelerated ions and processes the sample, the ion generation unit emits the electrons. A cathode having an inner diameter of 3.5 mm or more and less than 4 mm, and a magnetic field generator for generating a magnetic field in the range of 140 mT to 160 mT on the central axis of the ion generator. It is characterized by having.

  As another specific embodiment, the ion milling method of the present invention includes an emission step in which electrons are emitted from a cathode, and a gas supplied from outside inside an anode having an inner diameter of 3.5 mm or more and less than 4 mm. An ion generation step of generating ions by colliding with the electrons, a magnetic field generation step of causing the ions to act on a magnetic field generated by a magnet having a maximum energy product ranging from 110 kJ / m3 to 191 kJ / m3, and the ions An acceleration step of applying a voltage of 5 kV to 8 kV and accelerating the sample, and a processing step of irradiating the sample with the accelerated ions to process the sample. Other specific embodiments are shown in the claims at the time of filing.

  By using a unique configuration obtained from the inventor's knowledge, the amount of ions released from the ion gun can be dramatically increased in the present invention. This makes it possible to obtain a milling speed that is significantly higher than that of the prior art.

It is explanatory drawing which shows the structure of the ion milling apparatus of this invention. It is an example of sectional drawing which shows the structure of the peripheral part relevant to the ion gun of this invention. It is an example of the figure which shows the comparison of the axial strength inside the ion gun of this invention. It is a figure which shows the relationship between the milling speed explaining the effect of this invention, and the axial magnetic flux density of an ion gun. The anode inner diameters are (a) 8 mm, (b) 6 mm, (c) 5 mm, and (d) 4 mm, respectively. It is a figure which shows the relationship between the milling speed explaining the effect of this invention, and the maximum energy product of a permanent magnet. The anode inner diameters are (a) 8 mm, (b) 6 mm, (c) 5 mm, and (d) 4 mm, respectively. It is a figure which shows the relationship between the milling speed explaining the effect of this invention, and the residual magnetic flux density of a permanent magnet. The anode inner diameters are (a) 8 mm, (b) 6 mm, (c) 5 mm, and (d) 4 mm, respectively. It is a figure which shows the relationship between the milling speed explaining the effect of this invention, and the retention strength of a permanent magnet. The anode inner diameters are (a) 8 mm, (b) 6 mm, (c) 5 mm, and (d) 4 mm, respectively. It is an example of the figure which shows the beam profile of this invention. It is another example of the figure which shows the beam profile of this invention. It is another example of the figure which shows the comparison of the axial strength inside the ion gun of this invention. It is another example of the figure which shows the beam profile of this invention. It is an example of the figure which shows the relationship between the milling speed and magnetic field intensity explaining the effect of this invention. It is an example of the figure which shows the relationship between the amount of sample protrusion from the mask of this invention, and a milling rate. It is another example of sectional drawing which shows the structure of the peripheral part relevant to the ion gun of this invention. It is another example of sectional drawing which shows the structure of the peripheral part relevant to the ion gun of this invention.

  The present invention relates to an ion milling apparatus having an ion gun for producing a sample to be observed with an electron microscope, a Penning discharge system capable of obtaining a significantly higher milling speed than the conventional one, or an ion gun having a shape equivalent thereto. The present invention relates to an ion milling apparatus and an ion milling method.

  For this reason, as a configuration of the Penning discharge type ion gun, it is possible to dramatically increase the amount of ions released from the ion gun in a permanent magnet having a specific magnetic field strength based on the knowledge of the present inventors. Control to generate ions in a specific ionization chamber region. As a result, it is possible to obtain a milling speed that is significantly higher than in the prior art.

  Further, in each configuration of the ion gun of the present invention, there is a merit as compared with the conventional one other than that the ion beam current is stabilized. This is because ions emitted by an excessive magnetic field or an excessive ionization chamber region can be prevented from colliding with the peripheral portion of the acceleration electrode outlet hole. For example, there is an advantage of reducing adverse effects such as repositioning adhering to the acceleration electrode, deformation of the acceleration electrode outlet hole, and contamination due to redeposition.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.

  FIG. 1 is an explanatory view showing a configuration of an ion milling apparatus of the present invention. A so-called Penning discharge system or an ion gun 1 having a shape corresponding to the so-called Penning discharge system has components necessary for generating ions therein and forms an irradiation system for irradiating the sample 6 with the ion beam 2.

  Next, the gas source 41 is connected to the ion gun 1 through the gas supply mechanism 40, and the gas flow rate controlled by the gas supply mechanism 40 is supplied into the ionization chamber of the ion gun 1. The irradiation of the ion beam 2 and its ion beam current are controlled by the ion gun controller 3. The ion beam current of the ion beam 2 is measured by the current measuring unit 50. The current probe 52 also serves as an ion beam shutter, and has a mechanism that is operated by the current probe driver 51.

  The vacuum chamber 4 is controlled to atmospheric pressure or vacuum by a vacuum exhaust system 5. The sample 6 is held on a sample stage 7, and the sample stage 7 is held by a sample stage 8. The sample stage 8 can be pulled out of the vacuum chamber 4 when the vacuum chamber 4 is opened to the atmosphere, and a mechanism for tilting the sample 6 at an arbitrary angle with respect to the optical axis of the ion beam 2. Contains all elements. The sample stage drive unit 9 can swing the sample stage 8 left and right, and can control the speed thereof.

  FIG. 2 is an example of a cross-sectional view showing a configuration of a peripheral portion related to the ion gun of the present invention. The cathode 11 is formed in a disk shape from a conductive magnetic material such as pure iron, and has a hole for introducing an inert gas into the ionization chamber 18. Here, argon gas is illustrated as a representative example of the inert gas, but the present invention can also be applied to other inert gases.

Next, the permanent magnet 14 acts as a magnetic field generation unit. For example, it is a sumabow magnet characterized in that the maximum energy product is in the range of 127 kJ / m ³ to 143 kJ / m ³ , and is formed in a cylindrical shape or a shape equivalent thereto, and one end of the permanent magnet 14 is made of a magnetic material. Connected to the cathode 11. Although a permanent magnet has been described as an example here, a magnetic field generator (such as a coil) that exhibits a specific range of performance defined by the present invention may be used.

  The cathode 12 is formed in a disk shape from a conductive magnetic material such as pure iron, and a cathode outlet hole 32 having a diameter of 4 mm, for example, is provided at the center. The cathode 12 is connected to the other end of the permanent magnet 14, and a magnetic field is generated inside the ion gun 1 by the configuration of the cathode 11 and the permanent magnet 14. The insulator 16 formed in a cylindrical shape is disposed inside the permanent magnet 14, and the outer surface of the insulator 16 is in contact with the inner surface of the permanent magnet 14. The insulator 16 is made of a nonmagnetic material having electrical insulation such as ceramics.

  The anode 13 is fitted inside the insulator 16, the outer surface of the anode 13 is in contact with the inner surface of the insulator 16, and the inner surface faces the ionization chamber 18. The anode 13 is made of a nonmagnetic material having conductivity, such as aluminum, and has an inner diameter of 4 mm, for example, and the anode outlet hole 31 has a diameter of 4 mm and the same dimension as the anode inner diameter. The anode 13 is electrically insulated from the cathode 11, the cathode 12 and the permanent magnet 14 by an insulator 16.

  The acceleration electrode 15 is formed in a cylindrical shape from a nonmagnetic material having conductivity, such as stainless steel, and an acceleration electrode outlet hole 33 having a diameter of 4 mm, for example, is provided in the central portion through which the ion beam passes. The acceleration electrode 15 held by the ground electrode is fixed to the periphery of the ion gun base 17 so as to surround the cathode 11, the cathode 12 and the permanent magnet 14.

  The gas supply mechanism 40 is connected to the ion gun base 17 and includes all the components for adjusting the flow rate of the gas to be ionized and supplying the gas into the ion gun. The ion gun base 17 and the cathode 11 are provided with holes, and the argon gas introduced from the gas introduction mechanism 40 is introduced into the ionization chamber 18 through the holes.

  The argon gas introduced into the ionization chamber 18 is kept in an appropriate gas partial pressure, and a discharge voltage of about 0 to 4 kV is applied between the cathode 11, the cathode 12 and the anode 13 by the discharge power source 21 to discharge (glow Discharge) to generate argon ions. At this time, electrons generated by the discharge by the magnetic field of the permanent magnet 14 can be rotated, and the electron path can be lengthened to increase the discharge efficiency. Further, an acceleration voltage of about 0 to 10 kV (or more) is applied between the cathode 12 and the acceleration electrode 15 by the acceleration power source 22 to accelerate the argon ions, and the ion beam 2 is ejected outside the ion gun 1. . The permanent magnet 14 and the cathode 11 electrically connected to the cathode 12 are kept at the same potential as the cathode 12.

  By applying such a voltage, electrons are emitted from the surface of the cathode 11 and the surface of the cathode 12, and the emitted electrons are accelerated toward the anode 13. At that time, the electrons emitted from the surfaces of the cathode 11 and the cathode 12 are swung by the magnetic field formed in the ionization chamber 18 by the cathode 11, the cathode 12 and the permanent magnet 14.

  Here, when the electrons swirling in the ionization chamber 18 collide with the argon gas, the argon gas that has received the collision is ionized and positive ions are generated in the ionization chamber 18. Some of the cations generated in the ionization chamber 18 pass through the cathode exit hole 32 of the cathode 12, are accelerated by the acceleration electrode 15, and are emitted from the acceleration electrode exit hole 33 to the outside of the ion gun 1, thereby forming an ion beam made of cations. The sample 6 is processed by 2.

  The inventor of the present application repeatedly performs experiments for the purpose of a Penning discharge type ion gun capable of obtaining a significantly higher milling speed than before, and sets the magnetic field strength of the permanent magnet 14 and the region of the ionization chamber as the ion gun configuration. It has been uniquely found that when the inner diameter of the anode 13 is in a specific range, a milling speed that is unpredictable can be obtained. Therefore, according to the present invention, it is possible to provide a Penning discharge type ion gun, an ion milling apparatus having the same, and an ion milling method capable of obtaining a significantly higher milling speed than conventional ones.

  Table 1 shows the performance list of the magnets used in the experiment. FIG. 3 is an example of a diagram showing comparison of axial magnetic field strengths inside the ion gun of the present invention. FIG. 3 is a result of calculating the magnetic flux density on the central axis of the ion gun with the magnetic field simulator when the four types of magnets A to D shown in Table 1 are incorporated as the permanent magnet 14 of the ion gun 1. is there. The numerical values shown in Table 1 are used for the residual magnetic flux density and the coercive force used in the calculation.

  The position where the magnet is arranged in the Z-axis coordinate serving as the horizontal axis in FIG. 3 is in the range of Z = −34.5 to −22.5. This region acts as a plasma generation chamber inside the ion gun, and the on-axis magnetic flux density is about 220 mT for magnet A, about 200 mT for magnet B, about 145 mT for magnet C, and about 100 mT for magnet D.

FIG. 4 is a diagram showing the relationship between the milling speed and the on-axis magnetic flux density of the ion gun for explaining the effect of the present invention. (A) shows an anode inner diameter of 8 mm, (b) shows an anode inner diameter of 6 mm, (c) shows an anode inner diameter of 5 mm, and (d) shows an anode inner diameter of 4 mm. The milling conditions applied to the experiment were two types of acceleration voltage conditions of 5 kV and 6 kV, the discharge voltage was 1.5 kV, the gas introduced into the ion gun was argon gas, and the flow rate was 0.07 cm ³ / min. . The results are obtained when silicon is used as a material to be processed and milling without a mask serving as a shielding plate is performed for one hour. From the result of FIG. 4, only when the acceleration voltage is 6 kV, the on-axis magnetic flux density of the ion gun is around 140 mT, and the anode inner diameter is 5 mm or less, a milling speed that is twice or more that of other conditions can be obtained. I understand that.

FIG. 5 is a diagram showing the relationship between the milling speed and the maximum energy product of the permanent magnet for explaining the effect of the present invention. (A) shows an anode inner diameter of 8 mm, (b) shows an anode inner diameter of 6 mm, (c) shows an anode inner diameter of 5 mm, and (d) shows an anode inner diameter of 4 mm. From the results of FIG. 5, only when the acceleration voltage is 6 kV, the maximum energy product of the permanent magnet is in the range of 127 kJ / m ³ to 143 kJ / m ³ and the anode inner diameter is 5 mm or less, It can be seen that a milling speed of twice or more can be obtained.

  FIG. 6 is a diagram showing the relationship between the milling speed and the residual magnetic flux density of the permanent magnet for explaining the effect of the present invention. (A) shows an anode inner diameter of 8 mm, (b) shows an anode inner diameter of 6 mm, (c) shows an anode inner diameter of 5 mm, and (d) shows an anode inner diameter of 4 mm. From the result of FIG. 6, only when the acceleration voltage is 6 kV, the residual magnetic flux density of the permanent magnet is 850 mT, and the anode inner diameter is 5 mm or less, a milling speed more than twice that of other conditions can be obtained. I understand.

  FIG. 7 is a diagram showing the relationship between the milling speed and the holding force of the permanent magnet, for explaining the effect of the present invention. (A) shows an anode inner diameter of 8 mm, (b) shows an anode inner diameter of 6 mm, (c) shows an anode inner diameter of 5 mm, and (d) shows an anode inner diameter of 4 mm. From the result of FIG. 7, only when the acceleration voltage is 6 kV, the holding force of the permanent magnet is 660 mT, and the inner diameter of the anode is 5 mm or less, a milling speed more than twice that of other conditions can be obtained. I understand.

FIG. 8 is an example of a diagram showing a beam profile of the present invention. Here, in the ion gun configuration in which four types of magnets A to D shown in Table 1 are incorporated as the permanent magnet 14 of the ion gun 1 and the anode inner diameter is 4 mm, the acceleration voltage is 6 kV and the discharge voltage is 1.5 kV. As the gas introduced into the ion gun, argon gas having a flow rate of 0.07 cm ³ / min was used. This is a beam profile in the case where milling is performed for 1 hour without using a mask serving as a shielding plate, using silicon as a material to be processed. From the result shown in FIG. 8, only in the case of the magnet C, the depth of the beam mark is 300 μm, that is, the milling speed is 300 μm per hour, and it is possible to obtain a milling speed approximately twice that of other conditions. I understand that. Also in this case, the ion beam spot diameter is not reduced.

FIG. 9 is another example of a diagram showing a beam profile of the present invention. Here, the ion gun when the magnet C shown in Table 1 is incorporated as the permanent magnet 14 of the ion gun 1 and the anode inner diameter is 5.0 mm, 5.2 mm, 5.4 mm, 5.6 mm, and 5.8 mm. In the configuration, the acceleration voltage was 6 kV, the discharge voltage was 1.5 kV, and argon gas with a flow rate of 0.07 cm ³ / min was used as the gas introduced into the ion gun. This is a beam profile in the case where milling is performed for 1 hour without using a mask serving as a shielding plate, using silicon as a material to be processed. From the results of FIG. 9, it is understood that when the anode inner diameter is 5.0 mm, the depth of the beam mark is 290 μm, and it is possible to obtain a milling speed approximately twice that of the case of 5.4 mm or more. . Further, even when the anode inner diameter is 5.2 mm, a slight improvement in the milling speed can be seen. Therefore, if the anode inner diameter is 5.2 mm or less, it is included in the scope of the idea of the present invention, and among them, particularly remarkable effects. The region where appears appears under the condition that the anode inner diameter is 5.0 mm or less.

  Table 2 shows the performance list of other magnets used in the experiment. FIG. 10 is another example of a diagram showing a comparison of axial magnetic field strengths inside the ion gun of the present invention. FIG. 10 is a result of calculating the magnetic flux density on the central axis of the ion gun with the magnetic field simulator when the four types of magnets C to G shown in Table 2 are incorporated as the permanent magnet 14 of the ion gun 1. is there. The numerical values shown in Table 2 are used for the residual magnetic flux density and coercive force used in the calculation.

  The position where the magnet is arranged in the Z-axis coordinate serving as the horizontal axis in FIG. 10 is in the range of Z = −34.5 to −22.5. This region acts as a plasma generation chamber inside the ion gun, and the on-axis magnetic flux density is about 160 mT for magnet E, about 155 mT for magnet F, about 145 mT for magnet C, and about 140 mT for magnet G.

FIG. 11 is another example of a diagram showing a beam profile of the present invention. Here, in the ion gun configuration in which four types of magnets C to G shown in Table 2 are incorporated as the permanent magnet 14 of the ion gun 1 and the anode inner diameter is 4 mm, the acceleration voltage is 6 kV and the discharge voltage is 1.5 kV. As the gas introduced into the ion gun, argon gas having a flow rate of 0.07 cm ³ / min was used. This is a beam profile in the case where milling is performed for 1 hour without using a mask serving as a shielding plate, using silicon as a material to be processed. From the results of FIG. 11, it can be seen that the depth of the beam mark is 300 μm in all four types of magnets from the magnet C to the magnet G, that is, the milling speed can be 300 μm per hour.

FIG. 12 is an example of a diagram showing the relationship between the milling speed and the magnetic field strength for explaining the effect of the present invention. (A) Relation between milling speed and on-axis magnetic flux density of ion gun, (b) shows relation between milling speed and maximum energy product of permanent magnet. Here, seven types of magnets A to G shown in Tables 1 and 2 are incorporated as the permanent magnet 14 of the ion gun 1 and an ion gun configuration in which the anode inner diameter is 4 mm, the acceleration voltage condition is 6 kV, and the discharge is performed. The voltage was 1.5 kV, argon gas was used as the gas introduced into the ion gun, and the flow rate was 0.07 cm ³ / min. The results are obtained when silicon is used as a material to be processed and milling without a mask serving as a shielding plate is performed for one hour. From the results of FIG. 12, it can be seen that in the case of the magnet C, the magnet E, the magnet F, and the magnet G, a milling speed twice or more that of other magnets can be obtained. The magnetic field strength of these magnets has a maximum energy product in the range of 110 kJ / m ³ to 191 kJ / m ³ , a residual magnetic flux density in the range of 810 mT to 950 mT, and a coercive force in the range of 620 mT to 660 mT.

As shown above apply, as a configuration gun 1 according to the present invention, (1) the magnet maximum energy product in the range of 110 kJ / m ³ of 191kJ / m ³ as a permanent magnet 14 as a suitable magnetic field strength The axial magnetic flux density of the ion gun 1 is controlled within the range of 140 to 160 mT, (2) the anode inner diameter is limited to 5 mm or less as an appropriate ionization chamber region, and (3) the acceleration voltage is 6 kV or more. By limiting to this, it becomes possible to dramatically increase the amount of ions released from the ion gun, and to obtain a milling speed that is twice or more that of the prior art.

  4 to 7, the milling rate is slightly improved even when the acceleration voltage is 5 kV. Therefore, if the acceleration voltage is 5 kV or more, favorable conditions can be realized in the present invention. I understand that. Therefore, if the acceleration voltage is 5 kV or more, it is included in the scope of the idea of the present invention, and among them, a region where a particularly remarkable effect appears is that the acceleration voltage is 6 kV or more.

  Further, from the result of FIG. 9, even when the anode inner diameter is 5.2 mm, a slight improvement in the milling speed can be seen. Therefore, if the anode inner diameter is 5.2 mm or less, it is included in the concept of the present invention. Of these, the region in which a particularly remarkable effect appears is that the anode inner diameter is 5.0 mm or less.

FIG. 13 is an example of a diagram showing the relationship between the amount of sample protrusion from the mask of the present invention and the milling rate. Here, a mask serving as an ion beam shielding plate is placed on the upper surface of the sample to be processed, and cross-section processing is performed in which the protruding portion from the mask end surface is milled. The horizontal axis in FIG. 13 represents the amount of sample protrusion from the mask. ing. Here, as an example, the magnet C in Table 1 was incorporated as the permanent magnet 14 of the ion gun 1, and an ion gun configuration was evaluated in which the anode inner diameter was 4 mm and the anode outlet hole 31 diameter was 4 mm, which was the same as the anode inner diameter. As an example, the magnet A shown in Table 1 was incorporated as the permanent magnet 14 of the ion gun 1, and an ion gun configuration was evaluated in which the inner diameter of the anode was 8 mm and the diameter of the anode outlet hole 31 was 4 mm. The acceleration voltage was 6 kV, the discharge voltage was 1.5 kV, and an argon gas having a flow rate of 0.07 cm ³ / min was used as the gas introduced into the ion gun. Silicon was used as the work material, and the milling time was set to 1 hour. From the results shown in FIG. 13, it is possible to obtain a milling speed of 1350 μm / hour in the embodiment under the processing conditions in which the amount of sample protruding from the mask is 50 μm, and the milling speed is about 3 compared with 450 μm / hour of the conventional example. Double and remarkably improve.

  As described above, according to the present invention, it is possible to ideally increase the amount of ions emitted from the ion gun, and a Penning discharge type ion gun capable of obtaining a significantly higher milling speed than the conventional one. An ion milling apparatus and an ion milling method can be provided.

  FIG. 14 is another example of a cross-sectional view showing a configuration of a peripheral portion related to the ion gun of the present invention. The cathode 11 is formed in a disk shape from a conductive magnetic material such as pure iron, and has a hole for introducing argon gas into the ionization chamber 18. The permanent magnet 14 is, for example, a thick magnet magnet having a residual magnetic flux density in the range of 810 mT to 950 mT. One end of the permanent magnet 14 is connected to the cathode 11 made of a magnetic material. Yes. The cathode 12 is formed in a disk shape from a conductive magnetic material such as pure iron, and a cathode outlet hole 32 having a diameter of 4 mm, for example, is provided at the center. The cathode 12 is connected to the other end of the permanent magnet 14, and a magnetic field is generated in the ion gun 1 by the configuration of the cathode 11 and the permanent magnet 14. The insulator 16 formed in a cylindrical shape is disposed inside the permanent magnet 14, and the outer surface of the insulator 16 is in contact with the inner surface of the permanent magnet 14. The insulator 16 is made of a nonmagnetic material having electrical insulation such as ceramics. The anode 13 is fitted inside the insulator 16, the outer surface of the anode 13 is in contact with the inner surface of the insulator 16, and the inner surface faces the ionization chamber 18. The anode 13 is made of a nonmagnetic material having conductivity such as aluminum, and has an inner diameter of 5 mm, for example, and the anode outlet hole 31 has a diameter of 4 mm. The anode 13 is electrically insulated from the cathode 11, the cathode 12 and the permanent magnet 14 by an insulator 16. The acceleration electrode 15 is formed in a cylindrical shape from a nonmagnetic material having conductivity, such as stainless steel, and an acceleration electrode outlet hole 33 having a diameter of 2 mm, for example, is provided at the center. The acceleration electrode 15 held by the ground electrode is fixed to the periphery of the ion gun base 17 so as to surround the cathode 11, the cathode 12 and the permanent magnet 14. The gas supply mechanism 40 is connected to the ion gun base 17 and includes all the components for adjusting the flow rate of the gas to be ionized and supplying the gas into the ion gun. The ion gun base 17 and the cathode 11 are provided with holes, and the argon gas introduced from the gas introduction mechanism 40 is introduced into the ionization chamber 18.

  FIG. 15 is another example of a cross-sectional view showing a configuration of a peripheral portion related to the ion gun of the present invention. The cathode 11 is formed in a disk shape from a conductive magnetic material such as pure iron, and has a hole for introducing argon gas into the ionization chamber 18. The permanent magnet 14 is a Samakoba magnet having a holding force in the range of 620 mT to 660 mT, for example, and is formed in a cylindrical shape, and one end of the permanent magnet 14 is connected to the cathode 11 made of a magnetic material. . The cathode 12 is formed in a disk shape from a conductive magnetic material such as pure iron, and a cathode outlet hole 32 having a diameter of 3 mm, for example, is provided at the center. The cathode 12 is connected to the other end of the permanent magnet 14, and a magnetic field is generated in the ion gun 1 by the configuration of the cathode 11 and the permanent magnet 14.

  The insulator 16 formed in a cylindrical shape is disposed inside the permanent magnet 14, and the outer surface of the insulator 16 is in contact with the inner surface of the permanent magnet 14. The insulator 16 is made of a nonmagnetic material having electrical insulation such as ceramics. The anode 13 is fitted inside the insulator 16, the outer surface of the anode 13 is in contact with the inner surface of the insulator 16, and the inner surface faces the ionization chamber 18. The anode 13 is made of a nonmagnetic material having conductivity, such as aluminum, and has an inner diameter of 4 mm, for example, and the anode outlet hole 31 has a diameter of 3 mm. The anode 13 is electrically insulated from the cathode 11, the cathode 12 and the permanent magnet 14 by an insulator 16. The acceleration electrode 15 is formed in a cylindrical shape from a nonmagnetic material having conductivity, such as stainless steel, and an acceleration electrode outlet hole 33 having a diameter of 2 mm, for example, is provided at the center.

  The acceleration electrode 15 held by the ground electrode is fixed to the periphery of the ion gun base 17 so as to surround the cathode 11, the cathode 12 and the permanent magnet 14. The gas supply mechanism 40 is connected to the ion gun base 17 and includes all the components for adjusting the flow rate of the gas to be ionized and supplying the gas into the ion gun. Contains. The ion gun base 17 and the cathode 11 are provided with holes, and the argon gas introduced from the gas introduction mechanism 40 is introduced into the ionization chamber 18.

DESCRIPTION OF SYMBOLS 1 Ion gun 2 Ion beam 3 Ion gun control part 4 Vacuum chamber 5 Vacuum exhaust system 6 Sample 7 Sample stage 8 Sample stage 9 Sample stage drive part 11 Cathode 12 Cathode 13 Anode 14 Permanent magnet 15 Accelerating electrode 16 Insulator 17 Ion gun base 18 Ionization chamber 21 Discharge power supply 22 Acceleration power supply 31 Anode inner diameter
32 Anode outlet hole 33 Cathode outlet hole
34 Acceleration electrode outlet hole
40 Gas supply mechanism
41 Gas source 50 Current measurement unit
51 Current Measuring Element Driver 52 Current Measuring Element

Claims (36)

An ion generation unit that generates ions by colliding electrons with an externally supplied gas, and an acceleration electrode in which a voltage of 5 kV or more and 8 kV or less is applied to an electrode that accelerates the ions emitted from the ion generation unit. In an ion milling apparatus for irradiating and processing a sample with the accelerated ions,
The ion generator is
A cathode from which the electrons are emitted;
An anode provided inside the ion generator and having an inner diameter of 3.5 mm or more and less than 4 mm;
An ion milling apparatus comprising: a magnetic field generation unit configured to generate a magnetic field inside the ion generation unit by a magnet having a maximum energy product in a range of 110 kJ / m ³ to 191 kJ / m ³ . In the ion milling device according to claim 1,
The ion milling apparatus, wherein the magnet is a samarium cobalt magnet. In the ion milling device according to claim 1,
An ion milling apparatus, wherein a voltage of 6 kV or more is applied to the acceleration electrode. In the ion milling device according to claim 1,
The ion milling apparatus is characterized in that the ion generation unit is a Penning type. In the ion milling device according to claim 1,
The ion milling apparatus according to claim 1, wherein a residual magnetic flux density of the magnetic field generator is in a range from 810 mT to 950 mT. In the ion milling device according to claim 1,
The ion milling apparatus according to claim 1, wherein the holding force of the magnetic field generator is in a range from 620 mT to 660 mT. In the ion milling device according to claim 1,
An ion milling apparatus characterized in that the anode has a cylindrical shape, and the anode inner diameter and the diameter of the outlet hole of the anode have the same dimension. In the ion milling device according to claim 1,
An ion milling apparatus, wherein the diameter of the outlet hole of the anode is smaller than or equal to the inner diameter of the anode. In the ion milling device according to claim 8,
An ion milling apparatus, wherein an inner diameter of the anode is 3.8 mm or more and less than 4 mm. An ion generation unit that generates ions by colliding electrons with an externally supplied gas, and an acceleration electrode in which a voltage of 5 kV or more and 8 kV or less is applied to an electrode that accelerates the ions emitted from the ion generation unit. In an ion source used in an ion milling apparatus for irradiating and processing a sample with the accelerated ions,
The ion source is
A cathode from which the electrons are emitted;
An anode provided inside the ion generator and having an inner diameter of 3.5 mm or more and less than 4 mm;
An ion source comprising: a magnetic field generator configured to generate a magnetic field inside the ion generator by a magnet having a maximum energy product in a range of 110 kJ / m ³ to 191 kJ / m ³ . The ion source according to claim 10.
The ion source, wherein the magnet is a samarium cobalt magnet. The ion source according to claim 10.
An ion source, wherein a voltage of 6 kV or more is applied to the acceleration electrode. The ion source according to claim 10.
The ion source is a Penning type. The ion source according to claim 10.
The ion source according to claim 1, wherein a residual magnetic flux density of the magnetic field generator is in a range from 810 mT to 950 mT. The ion source according to claim 10.
The ion source according to claim 1, wherein the holding force of the magnetic field generator is in a range from 620 mT to 660 mT. An ion generation unit that generates ions by colliding electrons with an externally supplied gas, and an acceleration electrode in which a voltage of 5 kV or more and 8 kV or less is applied to an electrode that accelerates the ions emitted from the ion generation unit. In an ion milling apparatus for irradiating and processing a sample with the accelerated ions,
The ion generator is
A cathode from which the electrons are emitted;
An anode provided inside the ion generator and having an inner diameter of 3.5 mm or more and less than 4 mm;
An ion milling apparatus comprising: a magnetic field generation unit that generates a magnetic field in a range of 140 mT to 160 mT on a central axis of the ion generation unit. The ion milling device according to claim 16, wherein
An ion milling apparatus, wherein a voltage of 6 kV or more is applied to the acceleration electrode. An emission step in which electrons are emitted from the cathode;
An ion generation step of generating ions by colliding the electrons with a gas supplied from outside inside the anode having an inner diameter of 3.5 mm or more and less than 4 mm;
A magnetic field generation step for causing the ions to act on a magnetic field generated by a magnet having a maximum energy product in a range of 110 kJ / m3 to 191 kJ / m3;
An acceleration step of applying a voltage of 5 kV to 8 kV to the ions to accelerate the ions;
A processing step of irradiating the sample with the accelerated ions and processing the sample. The ion milling method according to claim 18, wherein
The ion milling method, wherein the acceleration step is an acceleration step of accelerating the ions by applying a voltage of 6 kV or more to the ions. The ion milling method according to claim 18, wherein
The ion milling method, wherein the magnetic field generation step is a step of generating a magnetic field in a range from 140 mT to 160 mT on a central axis of an ion generation unit. An ion generation unit that generates ions by colliding electrons with an externally supplied gas, and an acceleration electrode in which a voltage of 5 kV or more and 8 kV or less is applied to an electrode that accelerates the ions emitted from the ion generation unit. In an ion milling apparatus for irradiating and processing a sample with the accelerated ions,
The ion generator is
A cathode from which the electrons are emitted;
An anode provided inside the ion generator and having an inner diameter of 3.5 mm or more and 5 mm or less;
An ion milling device comprising: a magnetic field generation unit that generates a magnetic field inside the ion generation unit by a samarium cobalt magnet. The ion milling device according to claim 21,
An ion milling apparatus, wherein a voltage of 6 kV or more is applied to the acceleration electrode. The ion milling device according to claim 21,
The ion milling apparatus is characterized in that the ion generation unit is a Penning type. The ion milling device according to claim 21,
The ion milling apparatus according to claim 1, wherein a residual magnetic flux density of the magnetic field generator is in a range from 810 mT to 950 mT. The ion milling device according to claim 21,
The ion milling apparatus according to claim 1, wherein the holding force of the magnetic field generator is in a range from 620 mT to 660 mT. The ion milling device according to claim 21,
An ion milling apparatus characterized in that the anode has a cylindrical shape, and the anode inner diameter and the diameter of the outlet hole of the anode have the same dimension. The ion milling device according to claim 21,
An ion milling apparatus, wherein the diameter of the outlet hole of the anode is smaller than or equal to the inner diameter of the anode. The ion milling device according to claim 27,
An ion milling apparatus, wherein an inner diameter of the anode is 3.8 mm or more and 5 mm or less. An ion generation unit that generates ions by colliding electrons with an externally supplied gas, and an acceleration electrode in which a voltage of 5 kV or more and 8 kV or less is applied to an electrode that accelerates the ions emitted from the ion generation unit. In an ion source used in an ion milling apparatus for irradiating and processing a sample with the accelerated ions,
The ion source is
A cathode from which the electrons are emitted;
An anode provided inside the ion generator and having an inner diameter of 3.5 mm or more and 5 mm or less;
An ion source comprising: a magnetic field generator that generates a magnetic field inside the ion generator by a samarium cobalt magnet. 30. The ion source of claim 29.
An ion source, wherein a voltage of 6 kV or more is applied to the acceleration electrode. 30. The ion source of claim 29.
The ion source is a Penning type. 30. The ion source of claim 29.
The ion source according to claim 1, wherein a residual magnetic flux density of the magnetic field generator is in a range from 810 mT to 950 mT. 30. The ion source of claim 29.
The ion source according to claim 1, wherein the holding force of the magnetic field generator is in a range from 620 mT to 660 mT. An emission step in which electrons are emitted from the cathode;
An ion generation step of generating ions by colliding the electrons with a gas supplied from outside inside an anode having an inner diameter of 3.5 mm or more and 5 mm or less;
A magnetic field generation step for causing the ions to act on a magnetic field generated by a samarium cobalt magnet;
An acceleration step of applying a voltage of 5 kV to 8 kV to the ions to accelerate the ions;
A processing step of irradiating the sample with the accelerated ions and processing the sample. The ion milling method according to claim 34,
The ion milling method, wherein the acceleration step is an acceleration step of accelerating the ions by applying a voltage of 6 kV or more to the ions. The ion milling method according to claim 34,
The ion milling method, wherein the magnetic field generation step is a step of generating a magnetic field in a range from 140 mT to 160 mT on a central axis of an ion generation unit.

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