JP2018049842A - Ion gun, ion milling device, and ion milling method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an ion gun of a Penning discharge system capable of narrowing beam at low ion beam current at low acceleration voltage, and an ion milling device/ion milling method having the same.SOLUTION: An ion milling device which controls half-value width of beam profile of ion beam irradiated to a sample by an ion gun within a range of 200 μm to 350 μm has: the ion gun which ionizes gases supplied from outside and discharges ion beam; a gas flow rate variable part varying flow rate of the gases supplied for the ion gun; and a current measurement part measuring current value of the ion beam discharged by the ion gun. The gas flow rate variable part is set to a gas flow rate larger than gas flow rate at which the ion beam current becomes maximum on the basis of the gas flow rate determined by the gas flow rate variable part and the current value measured by the current measurement part, and makes the half-value width of the ion beam narrower than the half-value width at the gas flow rate that becomes maximum.SELECTED DRAWING: Figure 5

Description

  The present invention relates to an ion gun for preparing a sample, an ion milling apparatus having the ion gun, and an ion milling method.

  The ion milling method is a processing method in which a sample is cut using a sputtering phenomenon in which accelerated ions collide with a sample and the ions repel atoms and molecules. The sample to be processed can be processed with a smooth cross section by placing a mask serving as an ion beam shielding plate on the upper surface and sputtering the protruding portion from the mask end surface. This method is used for metals, glass, ceramics, electronic components, composite materials, and the like. For example, in an electronic component, it is used for applications such as internal structure, cross-sectional shape, film thickness evaluation, crystal state, failure and analysis of foreign substance cross-section. Further, it is used as a cross-sectional sample preparation method for acquiring morphological images, sample composition images, channeling images, X-ray analysis, crystal orientation analysis, and the like by various measuring apparatuses such as a scanning electron microscope.

  Some ion milling devices as described above use a small Penning discharge type ion gun with a simple configuration as an ion gun. The Penning discharge type ion gun is characterized by a high milling speed resulting from the high energy of the ion beam. Japanese Patent Application Laid-Open No. H10-228707 describes a method of always maintaining the current value of an ion beam emitted from an ion gun at a maximum value in order to maintain a high milling speed.

JP 2007-48588 Special table 2013-524467 JP 2012-156077 A

  An ion milling device equipped with a Penning discharge type ion gun has a relatively large ion beam energy. Therefore, it is very useful for realizing a high milling speed under the condition of high acceleration voltage. Therefore, as in Patent Document 1, it is desirable to always maintain the current value of the ion beam emitted from the ion gun at the maximum value, and the cause of the ion beam current value decreasing during processing is due to the change in the degree of vacuum during processing. In other words, a processing method is disclosed in which a gas flow rate assuming a change in the degree of vacuum is set in advance so as to obtain a gas pressure that maximizes the current value during processing. As described above, a penning discharge type ion gun conventionally requires a high ion beam current.

  FIG. 3 of Patent Document 2 discloses the relationship between the gas flow rate and the ion beam current value, and it is disclosed that the ion beam current value gradually decreases as the gas flow rate is increased from the assumed value. ing. However, since the purpose of Patent Document 2 is to ensure a high ion beam current value, there is no mention of using this low ion beam current value region.

  On the other hand, when processing a material having a low melting point, there is a concern that damage may occur on the cross section of the sample due to heat accumulation due to the energy of the ion beam. In recent years, the use of organic polymer materials is progressing also in the field of electronic devices such as organic EL, and the need for processing at a low acceleration voltage effective for suppressing thermal damage of samples is increasing. Also, sample damage due to thermal damage has become a problem in the processing of Cu-Zn alloys used for terminal connectors of electronic and electrical equipment, lead-free solder, and materials having a melting point lower than those materials. .

  Patent Document 2 discloses that the sample damage can be minimized by using a low acceleration voltage. However, in a Penning discharge type ion gun, the spot size on the sample increases at a low acceleration voltage. Is also disclosed.

  As a result of the inventor studying this point, in the Penning discharge type ion gun, a potential difference is generated between the cathode and the accelerating electrode outlet hole, and thus a lens is formed in the space. Since the strength of the lens is proportional to the potential difference between the cathode and the exit hole of the acceleration electrode, the higher the acceleration voltage, the larger the strength of the lens and the smaller the beam. However, since the lens effect is weak at a low acceleration voltage, it has been found that there is a problem that the ion beam spreads and the spot diameter on the sample increases.

  In Patent Document 3, a hollow anode discharge type ion gun is disclosed as an ion gun that can easily control an ion beam current at a low acceleration voltage. However, Patent Document 3 also shows that the processing speed of a hollow anode discharge type ion gun is significantly lower than that of a Penning discharge type ion gun at a high acceleration voltage. When a hollow anode discharge type ion gun is applied at a low acceleration voltage, there is a problem that a high milling speed cannot be achieved.

  Recognizing such a point as an issue, the present inventor repeatedly conducted experiments. The invention of the present application has been made based on the knowledge obtained by these methods, and the purpose thereof is a Penning discharge method or a beaming method characterized in that the spot diameter of the beam can be reduced by a simple method at a low acceleration voltage. It is an object of the present invention to provide an ion gun having a shape similar to that and an ion milling apparatus having the same.

  In order to achieve the above object, an ion milling apparatus according to the present invention, as a specific aspect, controls the half width of the beam profile of the ion beam irradiated from the ion gun to the sample in a range from 200 μm to 350 μm. The ion gun that ionizes a gas supplied from the outside and emits an ion beam, a gas flow rate variable unit that varies a flow rate of the gas supplied to the ion gun, and an ion beam emitted from the ion gun A current measurement unit that measures a current value of the gas, the gas flow rate variable unit includes a flow rate of the gas determined by the gas flow rate variable unit and a current value measured by the current measurement unit. Based on the gas flow rate at which the ion beam current is maximized. The full width at half maximum of the ion beam is narrower than the full width at half maximum.

  As another specific embodiment, an ion milling method according to the present invention is an ion milling method in which a half width of a beam profile by an ion beam is controlled in a range from 200 μm to 350 μm, and a sample is processed. A discharge step of ionizing the gas supplied from the ion source to emit an ion beam; a flow rate variable step of changing a flow rate of the gas supplied to the ion gun; and a current value of the ion beam emitted from the ion gun. Based on the measurement step, the gas flow rate determined in the flow rate variable step, and the current value measured in the measurement step, the gas flow rate is set higher than the gas flow rate at which the ion beam current becomes maximum. The setting step and the gas flow rate set at the setting step and at the maximum gas flow rate Irradiating the sample with the ion beam having the half width of the ion beam narrower than the half width.

  In the present invention, the ion beam can be narrowed down by a simple method at a low acceleration voltage. Thereby, the thermal damage with respect to a sample can be reduced.

It is explanatory drawing which shows the structure of the ion milling apparatus of this invention. It is an example of sectional drawing which shows the structure of the peripheral part relevant to the ion gun of this invention. It is an example of an explanatory diagram showing the relationship between the acceleration voltage and spot depth of a conventional Penning discharge type ion gun set so that the ion beam current becomes the maximum value. It is an example of the explanatory view showing the relation between gas flow rate and ion beam current explaining operation in the ion milling processing device of the present invention. It is an example of explanatory drawing which shows the effect of this invention. It is an example of explanatory drawing which shows another effect of this invention. It is an example of the explanatory view showing the spot depth of the present invention. It is an example of the explanatory view showing the relation between the gas flow rate and ion beam current explaining another operation of the present invention. It is an example of explanatory drawing which shows another spot depth of this invention. It is another example of explanatory drawing which shows the structure of the ion milling apparatus of this invention. It is another example of explanatory drawing which shows the structure of the ion milling apparatus of this invention.

  The inventor of the present application has found that the beam profile of the ion beam can be controlled by controlling the flow rate of the gas supplied into the ionization chamber of the ion gun by repeating the experiment. In particular, by measuring the gas flow rate at which the ion beam current reaches the maximum value and setting the gas flow rate to a flow rate greater than the flow rate value at which the ion beam current reaches the maximum value, the beam profile by the ion beam is controlled, It has been found that the half-value width can be reduced from 200 μm to 350 μm.

  In addition, according to the present invention, it was also confirmed that the ion beam current value is reduced as the ion beam profile is reduced in diameter, which can greatly contribute to the reduction of thermal damage.

  Accordingly, it is possible to provide a Penning discharge type ion gun capable of narrowing the ion beam thinly at a low acceleration voltage by a simple method, an ion milling apparatus having the same, and an ion milling method. In particular, according to the present invention, since a desired ion beam current value, ion beam shape, and milling speed can be arbitrarily selected by setting the acceleration voltage and the argon gas flow rate, the cooling source of the milling device combined with the cooling mechanism can be selected. Since cooling performance can be used effectively, it is highly effective as a milling process with little heat damage. This is particularly useful in ion milling of Cu—Zn alloys, lead-free solders, and organic polymer materials.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.

  FIG. 1 is an explanatory view showing a configuration of an ion milling apparatus of the present invention. A component necessary for generating ions is disposed inside the ion gun 1 having a Penning discharge method or a shape corresponding thereto, and an irradiation system for irradiating the sample 6 with the ion beam 2 is formed. The gas source 41 is connected to the ion gun 1 via the gas flow rate variable unit 40, and the gas flow rate controlled by the gas flow rate variable unit 40 is supplied into the ionization chamber of the ion gun 1. The irradiation of the ion beam 2 and its ion beam current are controlled by the ion gun controller 3. The ion beam current of the ion beam 2 is measured by the current measuring unit 50.

  The current probe 52 also serves as an ion beam shutter, and has a mechanism that is operated by the current probe driver 51. The vacuum chamber 4 is controlled to atmospheric pressure or vacuum by a vacuum exhaust system 5. The sample 6 is held on a sample stage 7, and the sample stage 7 is held by a sample stage 8. The sample stage 8 can be pulled out of the vacuum chamber 4 when the vacuum chamber 4 is opened to the atmosphere, and a mechanism for tilting the sample 6 at an arbitrary angle with respect to the optical axis of the ion beam 2. Contains all elements. The sample stage drive unit 9 can swing the sample stage 8 left and right, and can control the speed thereof.

  FIG. 2 is an example of a cross-sectional view showing a configuration of a peripheral portion related to the ion gun of the present invention. The ion gun 1 includes a gas flow rate variable unit 40 that supplies gas into the ion gun, an anode 13, a cathode 11, a cathode 12, a permanent magnet 14, an acceleration electrode 15, and an insulator 16, and is fixed to the ion gun base 17. The The ion gun control unit 3 is electrically connected to the discharge power source 21 and the acceleration power source 22 and controls the discharge voltage and the acceleration voltage.

  In such a Penning discharge type ion gun, since a potential difference is generated between the cathode 12 and the acceleration electrode outlet hole 33, a lens is formed in the space. Since the lens strength is proportional to the potential difference between the cathode 12 and the acceleration electrode outlet hole 33, the higher the acceleration voltage, the larger the lens strength and the narrower the beam. However, since the lens effect becomes weak at a low acceleration voltage, the beam spread becomes remarkable and the spot diameter on the sample becomes large.

  FIG. 3 is an example of an explanatory diagram showing the relationship between the acceleration voltage and spot depth of a conventional Penning discharge type ion gun set so that the ion beam current becomes the maximum value. Compared with a beam profile processed at an acceleration voltage of 6 kV, a beam profile processed at an acceleration voltage of 4 kV has a shallow beam mark depth, while an ion beam spot size increases. For this reason, it can be seen that the influence of thermal diffusion on the specimen becomes large even though a low acceleration voltage is selected for the purpose of low damage processing.

  The inventor of the present application has repeatedly conducted an experiment for the purpose of ion milling that enables the beam spot size to be reduced without increasing the spot size of the ion beam even with a low acceleration voltage in a penning discharge type ion gun. It has been found that the ion beam profile can be controlled by controlling the flow rate of the gas supplied to the ionization chamber 18. In particular, by measuring the gas flow rate at which the maximum value of the ion beam current can be obtained and setting the gas flow rate to be higher than the gas flow rate at which the ion beam current is maximized, It has been found that it is possible to reduce the beam diameter.

  FIG. 4 is an example of an explanatory diagram showing a relationship between a gas flow rate and an ion beam current for explaining an operation in the ion milling apparatus of the present invention. The configuration of the ion gun 1 applied to the experiment here is that the anode inner diameter 31 is 8 mmφ, the anode outlet hole 32 is 4 mmφ, the cathode outlet hole 33 is 4 mmφ, and the acceleration electrode outlet hole 34 is 2 mmφ. The applied voltage of the discharge power supply 21 is 1.5 kV, the applied voltage of the acceleration power supply 22 is 4 kV, and the gas source 41 supplied into the ionization chamber 18 of the ion gun 1 is argon. The workpiece was made of silicon and the milling time was set to 1 hour.

From FIG. 4, the ion beam current is changed by increasing the flow rate of the gas introduced into the ion gun 1, and in the ion gun configuration applied to the experiment, the ion beam is in the range of 0 to 0.2 cm ³ / min. The current tends to increase, and the ion beam current tends to decrease when the argon gas flow rate ranges from 0.2 to 1.0 cm ³ / min. Further, when the argon gas flow rate is in the range of 0 to 0.3 cm ³ / min, the ion beam current value varies greatly and becomes a very unstable region. In the region where the ion beam current becomes unstable, the ion beam emitted at an acceleration voltage of 4 kV has a small potential difference between the cathode outlet hole 33 and the acceleration electrode outlet hole 34, so that the lens effect is weak and the ion beam spreads. This is the effect of being unable to pass 2 mmφ of the acceleration electrode outlet hole 34 and colliding with the peripheral portion of the acceleration electrode outlet hole 34.

  This phenomenon causes not only destabilization of the ion beam current but also adverse effects such as repositioning adhering to the acceleration electrode, deformation of the acceleration electrode outlet hole, and contamination due to redeposition. From the results of FIG. 4, it can be seen that by increasing the argon gas flow rate, the influence of the ion beam colliding with the peripheral portion of the acceleration electrode outlet hole 34 is eliminated, and a stable ion beam current value is obtained.

FIG. 5 shows an example of the relationship between the argon gas flow rate and the half width of the ion beam profile in the present invention. FIG. 5 shows that when the argon gas flow rate is 0.3 cm ³ / min, the half width of the beam profile is 350 μm, and when the argon gas flow rate is 0.5 cm ³ / min, the half width of the beam profile is 250 μm and the argon gas flow rate is The beam profile has a half-width of 200 μm or less under the condition of 0.65 cm ³ / min, indicating that the diameter of the ion beam is reduced by increasing the argon gas flow rate.

FIG. 6 shows an example of the relationship between the argon gas flow rate and the ion milling speed in the present invention. FIG. 6 shows that when the argon gas flow rate is 0.3 cm ³ / min, the ion milling rate is 90 μm / hour, and when the argon gas flow rate is 0.9 cm ³ / min, the ion milling rate tends to decrease to 70 μm / hour. However, the reduction rate is not so large, indicating that some milling objects have a milling speed sufficient for practical use.

FIG. 7 is an example of an explanatory diagram showing the spot depth in the present invention. Here, the acceleration voltage condition is 4 kV, silicon is used as the material to be processed, and the beam profile is set when the milling time is set to 1 hour. Is intended as a conventional example is when the argon gas flow rate of 0.07 cm ³ / min, the one shown as an example is the case of argon gas flow rate of 0.9 cm ³ / min. According to the present invention, the half width of the ion beam profile is reduced to about 40% as compared with the conventional example. The depth of the ion beam, that is, the milling speed is almost the same.

Table 1 shows a list of preferable parameter ranges, more preferable parameter ranges, and setting examples when silicon is milled for 1 hour under the condition of an acceleration voltage of 4 kV. As a preferable range, the gas flow rate is set to 0.3 cm ³ / min or more. At this time, the pressure in the vacuum chamber 4 is set to 6.0 × 10 ⁻² Pa or more, and the obtained ion beam current value is 85 μA or less, the ion beam spot. The full width at half maximum is 370 μm or less, and the beam spot depth is 90 μm or less.

As a more preferable range, the gas flow rate is 0.6 cm ³ / min or more, the pressure in the vacuum chamber 4 at this time is 1.4 × 10 ⁻¹ Pa or more, and the obtained ion beam current value is 55 μA or less, The half width of the beam spot is 230 μm or less, and the beam spot depth is 75 μm or less. As a setting example, the gas flow rate was 0.9 cm ³ / min, the pressure in the vacuum chamber 4 at this time was 2.0 × 10 ⁻¹ Pa, the obtained ion beam current value was 45 μA, and the ion beam The half width of the spot is 190 μm, and the beam spot depth is 75 μm. As shown in Table 1, the ion beam current value, the ion beam shape, and the milling speed can be arbitrarily selected by setting the acceleration voltage and the argon gas flow rate.

  FIG. 8 is an example of an explanatory diagram showing the relationship between the gas flow rate and the ion beam current for explaining the operation of the present invention. The configuration of the ion gun 1 applied to the experiment here is that the anode inner diameter 31 is 8 mmφ, the anode outlet hole 32 is 4 mmφ, the cathode outlet hole 33 is 4 mmφ, and the acceleration electrode outlet hole 34 is 2 mmφ. The applied voltage of the discharge power supply 21 is 1.5 kV, the applied voltage of the acceleration power supply 22 is 3 kV, and the gas source 41 supplied into the ionization chamber 18 of the ion gun 1 is argon. The workpiece was made of silicon and the milling time was set to 1 hour.

From FIG. 6, the ion beam current is changed by increasing the flow rate of the gas introduced into the ion gun 1, and in the ion gun configuration applied to the experiment, the ion beam is in the range of 0 to 0.35 cm ³ / min. The current tends to increase, and the ion beam current tends to decrease in the argon gas flow rate range of 0.35 to 1.0 cm ³ / min. Also, when the argon gas flow rate is in the range of 0 to 0.35 cm ³ / min, the ion beam current value varies greatly and becomes a very unstable region.

  In the region where the ion beam current becomes unstable, the ion beam emitted at the acceleration voltage of 3 kV has a smaller potential difference between the cathode outlet hole 33 and the acceleration electrode outlet hole 34, and therefore the lens effect is weak and the ion beam is This is due to the fact that it further spreads and cannot pass 2 mmφ of the acceleration electrode outlet hole 34 and collides with the peripheral portion of the acceleration electrode outlet hole 34. This phenomenon causes not only destabilization of the ion beam current but also adverse effects such as repositioning adhering to the acceleration electrode, deformation of the acceleration electrode outlet hole, and contamination due to redeposition. From the result of FIG. 8, it can be seen that by increasing the argon gas flow rate, the influence of the ion beam colliding with the peripheral portion of the acceleration electrode outlet hole 34 is eliminated, and a stable ion beam current value is obtained.

FIG. 9 is an example of an explanatory diagram showing the spot depth in the present invention. Here, the acceleration voltage condition is 3 kV, silicon is used as the material to be processed, and the beam profile is set when the milling time is set to 1 hour. Is intended as a conventional example is when the argon gas flow rate of 0.07 cm ³ / min, the one shown as an example is the case of argon gas flow rate of 0.9 cm ³ / min. According to the present invention, the half width of the ion beam profile is reduced to about 30% as compared with the conventional example. The depth of the ion beam, that is, the milling speed is almost the same.

Table 2 shows a list of preferable parameter ranges, more preferable parameter ranges, and setting examples when silicon is milled for 1 hour under the condition of an acceleration voltage of 3 kV. As a preferable range, the gas flow rate is set to 0.3 cm ³ / min or more. At this time, the pressure in the vacuum chamber 4 is set to 6.0 × 10 ⁻² Pa or more, and the obtained ion beam current value is 65 μA or less, the ion beam spot. The full width at half maximum is 330 μm or less, and the beam spot depth is 40 μm or less.

As a more preferable range, the gas flow rate is 0.6 cm ³ / min or more, the pressure in the vacuum chamber 4 at this time is 1.4 × 10 ⁻¹ Pa or more, and the obtained ion beam current value is 45 μA or less, The half width of the beam spot is 300 μm or less, and the beam spot depth is 30 μm or less. As a setting example, the gas flow rate was 0.9 cm ³ / min, the pressure in the vacuum chamber 4 at this time was 2.0 × 10 ⁻¹ Pa, the obtained ion beam current value was 35 μA, and the ion beam The half width of the spot is 195 μm, and the beam spot depth is 30 μm.

  As shown in Table 2, it can be seen that the ion beam current value, ion beam shape, and milling speed can be arbitrarily selected by setting the acceleration voltage and the argon gas flow rate. According to the above configuration, since the ion beam profile can be controlled arbitrarily, it is easy to stably control the ion current under a low acceleration voltage condition by selecting the conditions according to the material characteristics of the milling object. In addition, it is possible to realize an ion milling apparatus including an ion gun capable of obtaining a stable ion current by suppressing redeposition adhered to the acceleration electrode, deformation of the acceleration electrode outlet hole, and contamination of the acceleration electrode due to redeposition.

  FIG. 10 is another example of an explanatory view showing the configuration of the ion milling apparatus of the present invention. 1 is an ion milling apparatus in which a sample stage cooling unit 70 for sample cooling is added to the apparatus configuration shown in FIG. 1, and a cooling source 72 and a cooling control unit 73 are arranged on the atmosphere side of the vacuum chamber 4. The ion milling apparatus includes a sample stage cooling unit 70 in which a sample 6 and a sample stage 7 which are heat generation sources in the vacuum chamber 4 are connected by a heat transfer unit 71.

  When the heat transfer unit 71 is connected to the sample 6 and the sample stage 7 by applying a metallic mesh wire filled with an ionic liquid inside the resin tube and a liquid nitrogen dewar to the cooling source 72, the sample is cooled. The range is limited to 700 μmφ due to the configuration of the apparatus. For this reason, as shown in FIG. 3, the beam spot area becomes too large in the beam profile of the conventional Penning discharge type ion gun in which the ion beam current is set to the maximum value, so that the sample 6 is sufficiently cooled. It is impossible to avoid thermal damage (thermal damage) of the sample.

  According to the present invention, as shown in Tables 1 and 2, a desired ion beam current value, ion beam shape, and milling speed can be arbitrarily selected by setting the acceleration voltage and the argon gas flow rate. Therefore, it is possible to select a combination of an ion milling process having an optimum ion beam current and an ion beam profile in consideration of the cooling performance of the apparatus and the material characteristics of the milling object. Here, the above-described configuration is illustrated as a representative example of the sample stage cooling unit 70, but the present invention can be applied even when the sample stage cooling unit 70 has another configuration.

  In this way, it is shown that an ion beam that can effectively use the cooling performance of the cooling source can be formed arbitrarily, and it is possible to make a selection including increase / decrease of the ion beam current value, and a greater cooling effect can be expected. Since the ion milling speed does not greatly decrease, it has been shown that a practically sufficient milling speed can be realized particularly for a milling object that has had to be lowered to reduce thermal damage. Thus, the present invention can obtain a greater effect as a low thermal damage milling device by combining with an ion milling device provided with a sample stage cooling unit for the purpose of cooling the sample.

  FIG. 11 is another example of an explanatory view showing the configuration of the ion milling apparatus of the present invention. The central control unit 80 includes at least a gas flow rate control unit 81 and an ion beam current control unit 82, and is electrically connected to at least the current measurement unit 50 and the gas flow rate variable unit 40. The current measuring element 52 arranged in the current measuring unit 50 has a mechanism arranged on the axis of the ion beam 2 and retracted from the axis of the ion beam 2 by the current measuring element driving unit 51. When the current measuring element 52 is arranged on the axis of the ion beam 2 by the current measuring element driving unit 51, the output of the current measuring unit 50 is sent to the central control unit 80, and the central control unit 80 transmits the ion beam current. The controller 82 monitors the ion beam current value. Further, the central control unit 80 drives the gas flow rate variable unit 40 by the gas flow rate control unit 81 to vary the gas flow rate supplied to the ionization chamber 18 of the ion gun 1. At this time, the central control unit 80 monitors variations in the ion beam current value measured by the current measuring unit 50 and automatically acquires the measurement data shown in FIGS. The central control unit 80 can perform stable ion milling by automatically setting a gas flow rate at which a stable ion beam having no variation can be acquired from the measurement data.

DESCRIPTION OF SYMBOLS 1 Ion gun 2 Ion beam 3 Ion gun control part 4 Vacuum chamber 5 Vacuum exhaust system 6 Sample 7 Sample stage 8 Sample stage 9 Sample stage drive part 11 Cathode 12 Cathode 13 Anode 14 Permanent magnet 15 Accelerating electrode 16 Insulator 17 Ion gun base 18 Ionization chamber 21 Discharge power supply 22 Acceleration power supply 31 Anode inner diameter
32 Anode outlet hole 33 Cathode outlet hole
34 Acceleration electrode outlet hole
40 Gas flow variable unit 41 Gas source 50 Current measuring unit
51 Current Measuring Element Driver 52 Current Measuring Element
70 Sample stage cooling section
71 Heat transfer section
72 Cooling source 73 Cooling control unit 80 Central control unit 81 Gas flow rate control unit 82 Ion beam current control unit

Claims (10)

An ion milling apparatus for controlling a half-value width of a beam profile of an ion beam irradiated on a sample from an ion gun to a range from 200 μm to 350 μm,
The ion gun for ionizing a gas supplied from the outside to emit an ion beam;
A gas flow rate variable unit that varies the flow rate of the gas supplied to the ion gun;
A current measuring unit for measuring a current value of an ion beam emitted from the ion gun,
The gas flow rate variable unit is greater than the gas flow rate at which the ion beam current is maximized based on the gas flow rate determined by the gas flow rate variable unit and the current value measured by the current measurement unit. An ion milling apparatus, wherein the ion milling apparatus is set to a gas flow rate and narrows the half width of the ion beam from the half width at the maximum gas flow rate. In the ion milling device according to claim 1,
An ion milling apparatus characterized in that the exit diameter of the acceleration electrode is 2 mmφ. In the ion milling device according to claim 1,
An ion milling apparatus comprising a heat transfer unit that transfers heat from the sample and the sample stage to a cooling source. In the ion milling device according to claim 1,
The ion milling apparatus according to claim 1, wherein the gas is selected from the group consisting of an inert gas and a reactive gas. In the ion milling device according to claim 1,
The ion milling apparatus, wherein the gas is argon. In the ion milling device according to claim 5,
The ion milling apparatus according to claim 1, wherein the argon gas is supplied to the ion gun at a flow rate of 0.3 to 0.5 cubic centimeters per minute. In the ion milling device according to claim 5,
The ion milling apparatus according to claim 1, wherein the argon gas is supplied to the ion gun at a flow rate of 0.3 cubic centimeters per minute or more. In the ion milling device according to claim 1,
The ion milling apparatus is characterized in that the ion gun is a Penning discharge method. An ion milling method for processing a sample by controlling a half width of a beam profile by an ion beam in a range from 200 μm to 350 μm,
An emission step of ionizing an externally supplied gas to emit an ion beam;
A flow rate variable step for varying the flow rate of the gas supplied to the ion gun;
A measurement step of measuring a current value of an ion beam emitted from the ion gun;
Based on the flow rate of the gas determined in the flow rate variable step and the current value measured in the measurement step, a setting step of setting a gas flow rate higher than the gas flow rate at which the ion beam current is maximized;
An ion milling method comprising: irradiating the sample with the ion beam set in the setting step and irradiating the ion beam with the half-value width of the ion beam narrower than the half-value width at the maximum gas flow rate. In the ion milling method according to claim 9,
The ion milling method, wherein the sample is a Cu-Zn alloy or lead-free solder, or a material having a melting point lower than that of the Cu-Zn alloy or lead-free solder.

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