JPS61135710A - Method of dicing semiconductor wafer - Google Patents
Method of dicing semiconductor waferInfo
- Publication number
- JPS61135710A JPS61135710A JP59258494A JP25849484A JPS61135710A JP S61135710 A JPS61135710 A JP S61135710A JP 59258494 A JP59258494 A JP 59258494A JP 25849484 A JP25849484 A JP 25849484A JP S61135710 A JPS61135710 A JP S61135710A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- dicing
- spacer
- adhesive
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Dicing (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
本発明は、半導体素子製造工程の中で半導体ウェハから
素子を分割するための半導体ウェハダイシング方法に関
する。The present invention relates to a semiconductor wafer dicing method for dividing devices from a semiconductor wafer during a semiconductor device manufacturing process.
複数の半導体素子がつくり込まれた半導体ウェハから個
々の素子に分割するための方法としてダイシング方法が
知られている。この方法は第2図に示すように半導体ウ
ェハ1を粘着シート2に接着して支持台3上に吸引固定
し、高速回転したダイヤモンドブレードを用いて切れ目
4を粘着シート2に達するまで入れ、ウェハを完全に分
割する方法である。しかしこの場合ウェハlと粘着シー
ト2の接着面に気泡があるとダイシング作業中にチップ
が飛散してしまうことがあろ、また粘着シート2′に付
着したチップ11を分離するには、力によってはがす方
法と溶剤を用いて粘着剤を溶解する方法が考えられるが
、はがした場合には第3図に示すようにチップ11に粘
着剤の残渣5.が残存し、素子の特性劣化、導通不良が
発生することがある。
一方、溶剤を使用するとしても、溶剤に完全に溶解する
接着剤が得に(いという問題がある。A dicing method is known as a method for dividing a semiconductor wafer on which a plurality of semiconductor elements are fabricated into individual elements. In this method, as shown in FIG. 2, a semiconductor wafer 1 is adhered to an adhesive sheet 2 and fixed by suction on a support 3, and a cut 4 is made using a diamond blade rotating at high speed until it reaches the adhesive sheet 2. This is a method of completely dividing the However, in this case, if there are air bubbles on the adhesive surface between the wafer 1 and the adhesive sheet 2, the chips may be scattered during the dicing operation, and in order to separate the chips 11 attached to the adhesive sheet 2', it is necessary to peel them off by force. One possible method is to dissolve the adhesive using a solvent, but when removed, adhesive residue may be left on the chip 11 as shown in FIG. 3. may remain, resulting in deterioration of device characteristics and poor conduction. On the other hand, even if a solvent is used, there is a problem that it is difficult to obtain an adhesive that completely dissolves in the solvent.
本発明によれば、半導体ウェハを加熱溶解した蝋を接着
剤として用いて薄いスペーサを介して固定板−固着し、
固定板を支持台上に固定してダイシングプレートを用い
てスペーサまで達する切れ目を入れることにより上記の
目的を達成する。According to the present invention, a semiconductor wafer is fixed to a fixing plate via a thin spacer using wax melted by heating as an adhesive,
The above objective is achieved by fixing the fixing plate on a support and using a dicing plate to make cuts that reach the spacer.
第1図は本発明の一実施例の切断後の状態を示したもの
で、半導体ウェハlを先ず、例えば0.1〜0.5 m
の一定の厚さを有する紙等を用いろスペーサ6を挟み、
加熱により溶解した蝋(ワックス)7を両面の接着剤と
して固定板8に接着する。固定[8には、例えば表面平
坦で均一な厚さを育するものか入手容易なガラス板を用
いる。このあと固定板8を支持台3に吸引固定し、図示
しないダイシングプレートを用いて切れ目4をスペーサ
6に切り込むまで入れ、ウェハlを完全に切断する。
切れ目4によって生ずるチップ11とスペーサ6および
固定板8との分離は、加温した有機溶剤、例えばトリク
レンで蝋7を溶解、洗浄することにより容易に行うこと
ができチップ11上に蝋の残渣が付着することがない。
接着剤として用いる蝋は、約100度の熱で溶解し、流
動性を有するので、スペーサ6とウェハlの間に気泡が
残らぬように接着することができる。
またスペーサ6を予めウェハ1に接着することによりウ
ェハ1とスペーサ6の間に気泡のない接着が一層容昌に
でき、またスペーサ6を用いることによりダイシングプ
レートを固定板8まで切り込むことな(ウェハの完全切
断ができるので、ダイシングプレートの寿命を長くし、
高度の平坦度と均一な厚みを必要とする固定板8の繰り
返し使用が可能になろので費用の軽減をもたらす。
【発明の効果]
本発明は、グイシングすべき半導体ウェハをダイシング
装置の支持台上に、例えば吸引により固定できる固定板
上に薄いスペーサを介して蝋を用いて接着するもので、
加熱溶解により流動性の冨む状態になる蝋を用い、また
スペーサを用いることにより気泡のない接着が可能とな
るため、切断時のチップの飛散が防止される。
接着剤の蝋は、加熱によって容易に再溶解するため貼り
付けの変更が容易であり、またチップ化の際に有機溶剤
で完全に除去することが可能となり、素子特性の劣化の
ない高品質の半導体チップを作成することができる。FIG. 1 shows the state of an embodiment of the present invention after cutting, in which a semiconductor wafer l is first cut into a wafer of 0.1 to 0.5 m.
Sandwich the filter spacer 6 using paper or the like having a certain thickness,
Wax 7 melted by heating is used as adhesive on both sides to adhere to the fixed plate 8. For fixing [8], for example, a glass plate with a flat surface and a uniform thickness or an easily available glass plate is used. Thereafter, the fixing plate 8 is suctioned and fixed to the support base 3, and the slits 4 are inserted into the spacers 6 using a dicing plate (not shown) to completely cut the wafer 1. The separation of the chip 11 from the spacer 6 and fixing plate 8 caused by the cut 4 can be easily achieved by dissolving the wax 7 with a heated organic solvent, such as trichloride, and washing it. Will not stick. The wax used as the adhesive melts at a heat of about 100 degrees and has fluidity, so that the spacer 6 and the wafer 1 can be bonded without leaving any air bubbles between them. Furthermore, by adhering the spacer 6 to the wafer 1 in advance, bubble-free adhesion can be achieved between the wafer 1 and the spacer 6, and by using the spacer 6, the dicing plate does not need to be cut into the fixing plate 8 (wafer It is possible to completely cut the dicing plate, extending the life of the dicing plate.
The fixed plate 8, which requires a high degree of flatness and uniform thickness, can be used repeatedly, resulting in cost reduction. [Effects of the Invention] The present invention uses wax to bond a semiconductor wafer to be diced onto a support stand of a dicing device, for example, onto a fixing plate that can be fixed by suction, using a thin spacer.
By using wax that becomes highly fluid when melted by heating and by using a spacer, bubble-free bonding is possible, which prevents chips from scattering during cutting. The wax used in the adhesive can be easily remelted by heating, making it easy to change the pasting process, and it can also be completely removed using an organic solvent when making chips, making it possible to create high-quality products without deteriorating device characteristics. Semiconductor chips can be created.
第1図は本発明の一実施例における切断後の状1;半導
体ウェハ、3:支持台、4:切れ目、6:スペーサ、7
:蝋、8:固定板。
第2図 第3因FIG. 1 shows the state after cutting in an embodiment of the present invention 1: semiconductor wafer, 3: support stand, 4: cut, 6: spacer, 7
: Wax, 8: Fixed plate. Figure 2 Third cause
Claims (1)
て薄いスペーサを介して固定板に固着し、固定板を支持
台上に固定してダイシングプレートを用いてスペーサに
達する切れ目を入れることを特徴とする半導体ウェハダ
イシング方法。1) A semiconductor wafer is heated and melted using wax as an adhesive to adhere to a fixing plate via a thin spacer, the fixing plate is fixed on a support stand, and a cut is made to reach the spacer using a dicing plate. A semiconductor wafer dicing method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59258494A JPS61135710A (en) | 1984-12-07 | 1984-12-07 | Method of dicing semiconductor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59258494A JPS61135710A (en) | 1984-12-07 | 1984-12-07 | Method of dicing semiconductor wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61135710A true JPS61135710A (en) | 1986-06-23 |
Family
ID=17320986
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59258494A Pending JPS61135710A (en) | 1984-12-07 | 1984-12-07 | Method of dicing semiconductor wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61135710A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH029186A (en) * | 1988-06-28 | 1990-01-12 | Tanaka Kikinzoku Kogyo Kk | Manufacture of square type block |
JP2015003356A (en) * | 2013-06-20 | 2015-01-08 | 株式会社ディスコ | Cutting method |
-
1984
- 1984-12-07 JP JP59258494A patent/JPS61135710A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH029186A (en) * | 1988-06-28 | 1990-01-12 | Tanaka Kikinzoku Kogyo Kk | Manufacture of square type block |
JP2015003356A (en) * | 2013-06-20 | 2015-01-08 | 株式会社ディスコ | Cutting method |
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