JPS6113316B2 - - Google Patents
Info
- Publication number
- JPS6113316B2 JPS6113316B2 JP14899380A JP14899380A JPS6113316B2 JP S6113316 B2 JPS6113316 B2 JP S6113316B2 JP 14899380 A JP14899380 A JP 14899380A JP 14899380 A JP14899380 A JP 14899380A JP S6113316 B2 JPS6113316 B2 JP S6113316B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- insulating substrate
- back side
- terminal
- patterns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 29
- 238000001514 detection method Methods 0.000 claims description 14
- 239000004020 conductor Substances 0.000 claims description 10
- 238000005476 soldering Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0866—Detecting magnetic domains
Description
【発明の詳細な説明】
本発明は磁気バブルメモリ装置、特に誘導静電
ノイズ除去の改良に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to magnetic bubble memory devices, and more particularly to improvements in induced electrostatic noise cancellation.
一般に、磁区が垂直な磁化容易軸を有する磁性
薄膜に垂直方向の磁界を加えていくと、或る磁界
強さで、直径数μm以下のバブルドメインが形成
されるようになる。このバブルドメインは磁界の
勾配により磁性薄膜内を自由に動かすことができ
ることから、メモリ素子として利用したものが磁
気バブルメモリ装置である。かかる磁気バブルメ
モリ装置は従来、第1図の装置内斜視図及び第2
図の装置側断面図に示す如く構成されている。即
ち第1図及び第2図において、絶縁基板2に搭載
された磁気バブルメモリチツプ1は、その上にバ
ブルの発生、転送、検出、消去などを行なう各制
御パターンが形成され、それら各パターンの電極
が絶縁基板2の側部に設けられた表面側の外部引
出用の端子パターン3にそれぞれ接続されてい
る。また、チツプ1を包囲してバブルの転送に必
要な回転磁界を与えるためのX方向コイル4とY
方向コイル5とが設けられ、それぞれのコイル4
及び5はその中央にチツプ1が位置するように絶
縁基板2に嵌装される。そして、絶縁基板2の各
端子パターン3には枠形をしたモールド体6の側
壁に貫設した複数の外部リード7がはんだ接続さ
れ、またコイル4及び5の上下方向にはバブルを
保持するためのバイアス磁界を印加する永久磁石
8及び9と整磁板10及び11とがモールド体6
に装着され、さらにこれら全体がヨークを兼ねた
磁気シールドケース12に挿入されている。 Generally, when a perpendicular magnetic field is applied to a magnetic thin film whose magnetic domains have a perpendicular easy axis of magnetization, bubble domains with a diameter of several μm or less are formed at a certain magnetic field strength. Since this bubble domain can move freely within the magnetic thin film depending on the gradient of the magnetic field, it is used as a memory element in a magnetic bubble memory device. Conventionally, such a magnetic bubble memory device has a perspective view of the inside of the device shown in FIG.
It is constructed as shown in the sectional side view of the device in the figure. That is, in FIGS. 1 and 2, a magnetic bubble memory chip 1 mounted on an insulating substrate 2 has control patterns formed thereon for generating, transferring, detecting and erasing bubbles, and The electrodes are respectively connected to terminal patterns 3 for external extraction on the front side provided on the sides of the insulating substrate 2. In addition, an X-direction coil 4 and a Y-direction coil 4 are used to surround the chip 1 and provide a rotating magnetic field necessary for bubble transfer.
directional coils 5 are provided, each coil 4
and 5 are fitted onto the insulating substrate 2 so that the chip 1 is located in the center thereof. A plurality of external leads 7 penetrated through the side wall of a frame-shaped molded body 6 are soldered to each terminal pattern 3 of the insulating substrate 2, and the coils 4 and 5 are provided with bubbles in the vertical direction. Permanent magnets 8 and 9 and magnetic shunt plates 10 and 11 that apply a bias magnetic field of
The entire structure is inserted into a magnetic shield case 12 which also serves as a yoke.
なお、第3図はチツプ1を搭載した絶縁基板2
の表面の平面図であり、チツプ1の電極は導体パ
ターン13を介して端子パターン3に接続されて
おり、該導体パターン13の上に絶縁層を介して
アースパターン14が設けられている。なお該ア
ースパターン14の両端は表面側アース端子パタ
ーン3―1に接続し、静電誘導によるノイズが導
体パターン13を介してバブル検出信号に印加さ
れないように考慮されている。 Note that FIG. 3 shows an insulating substrate 2 on which a chip 1 is mounted.
1 is a plan view of the surface of the chip 1, in which the electrodes of the chip 1 are connected to a terminal pattern 3 via a conductor pattern 13, and a ground pattern 14 is provided on the conductor pattern 13 via an insulating layer. Note that both ends of the ground pattern 14 are connected to the front surface ground terminal pattern 3-1 to prevent noise due to electrostatic induction from being applied to the bubble detection signal via the conductor pattern 13.
かかる磁気バブルメモリ装置において、絶縁基
板2の端子パターン3はチツプ1の記憶容量増大
等に伴なつて数が増加する。その数増加によつて
絶縁基板2を大形化したのでは磁気バブルメモリ
装置全体が大型なものとなつてしまう。このた
め、従来より端子パターン3の幅寸法を狭くする
ことにより該端子パターン3の数増加に対処し、
この際該端子パターン3と外部リード7との十分
なはんだ付け強度を得るために該端子パターン3
を絶縁基板2の裏面側へも引出してはんだ付けの
接続面積の拡大を図つている。 In such a magnetic bubble memory device, the number of terminal patterns 3 on the insulating substrate 2 increases as the memory capacity of the chip 1 increases. If the insulating substrate 2 were made larger due to an increase in the number of them, the entire magnetic bubble memory device would become larger. For this reason, the increase in the number of terminal patterns 3 has been dealt with by narrowing the width of the terminal patterns 3 compared to conventional methods.
At this time, in order to obtain sufficient soldering strength between the terminal pattern 3 and the external lead 7, the terminal pattern 3
is also extended to the back side of the insulating substrate 2 to expand the soldering connection area.
これは第4図に示す如く、チツプ1を表面に搭
載した絶縁基板2の裏面2′に、はんだ付けに対
する所定の接続面積を有する裏面側の端子パター
ン3′を設け、この端子パターン3′は基板側面に
形成した導体層を介して基板表面の導体パターン
13に接続するようにしたものがある。しかし、
このような絶縁基板2を具えた磁気バブルメモリ
装置においては、表面側端子パターン3はアース
パターン14がノイズ遮蔽を行なうものの、裏面
側端子パターン3′についてはXコイル(第1図
の4)に印加される駆動電流(例えば三角波電
流)の電圧変化に基づくノイズがバブル検出用端
子パターン3―2′に印加し、結果的には該磁気
バブルメモリ装置の電気特性を損う欠点があつ
た。 As shown in FIG. 4, a terminal pattern 3' on the back side having a predetermined connection area for soldering is provided on the back side 2' of an insulating substrate 2 on which a chip 1 is mounted. Some devices are connected to a conductor pattern 13 on the surface of the substrate via a conductor layer formed on the side surface of the substrate. but,
In a magnetic bubble memory device equipped with such an insulating substrate 2, the earth pattern 14 shields noise from the terminal pattern 3 on the front side, but the terminal pattern 3' on the back side is shielded from the X coil (4 in FIG. 1). Noise based on voltage changes in the applied drive current (for example, triangular wave current) is applied to the bubble detection terminal pattern 3-2', resulting in a disadvantage that the electrical characteristics of the magnetic bubble memory device are impaired.
本発明の目的は上記欠点を除去することであ
り、この目的は上記絶縁基板の裏面側に設けた複
数の端子パターンのうち、アース用端子パターン
より引出され裏面側アースパターンがバブル検出
用端子パターンを囲うようにパターン形成するこ
とを特徴とした磁気バブルメモリ装置を提供して
達成される。 The purpose of the present invention is to eliminate the above-mentioned drawbacks, and this purpose is to provide a device in which, among a plurality of terminal patterns provided on the back side of the insulating substrate, the ground pattern on the back side is drawn out from the ground terminal pattern and is the bubble detection terminal pattern. This is achieved by providing a magnetic bubble memory device characterized by forming a pattern so as to surround the magnetic bubble memory device.
以下、本発明の一実施例に係わる絶縁基板の裏
面を示す第5図を用いて本発明を説明する。 The present invention will be described below with reference to FIG. 5, which shows the back side of an insulating substrate according to an embodiment of the present invention.
第5図において、20は表面に磁気バブルメモ
リチツプ1を搭載した絶縁基板であり、その裏面
の左右両側部にはそれぞれ複数の裏面側端子パタ
ーン21、即ち複数のバブル検出用端子パターン
21―2とアース端子パターン21―2と複数の
その他の端子パターン21―3がパターン形成さ
れている。これらの端子パターン21は基板20
の側面を通つて一部が基板表面に延長し、基板表
面の導体パターン(第3図の13)の一端に表面
側端子パターン3を介してそれぞれ接続され、該
導体パターンの他端はチツプ1の所定電極に接続
されている。そして、アース端子パターン21―
2からは平面視ほぼL字形に折曲したアースパタ
ーン24が引出されており、複数のバブル検出用
端子21―1にてなる端子パターン群を囲うよう
にパターン形成されている。 In FIG. 5, reference numeral 20 denotes an insulating substrate on which the magnetic bubble memory chip 1 is mounted, and on both left and right sides of the back side, there are a plurality of back side terminal patterns 21, that is, a plurality of bubble detection terminal patterns 21-2. A ground terminal pattern 21-2 and a plurality of other terminal patterns 21-3 are patterned. These terminal patterns 21 are connected to the substrate 20
A part of the conductor pattern extends to the substrate surface through the side surface of the substrate, and is connected to one end of the conductor pattern (13 in FIG. 3) on the substrate surface through the front side terminal pattern 3, and the other end of the conductor pattern is connected to the chip 1. is connected to a predetermined electrode. And ground terminal pattern 21-
A ground pattern 24 bent into a substantially L-shape in plan view is drawn out from 2, and is patterned so as to surround a terminal pattern group consisting of a plurality of bubble detection terminals 21-1.
このように、チツプ1を搭載して所要の回路接
続を行なつた絶縁基板20は、従来と同様手段で
他の装置構成部品とともに組立てられ、第1図及
び第2図に示したものと同様な磁気バブルメモリ
装置を完成するが、裏面側のアース端子パターン
21―2よりのアースパターン24はバブル検出
用端子パターン21―1とX方向コイル4との間
を仕切るように配置される。従つて、第6図に示
す如く検出用磁気抵抗素子R1及びR2と、ダミー
用磁気抵抗素子R3及びR4とにてブリツジ回路を
構成し、素子R1とR2との接続点及び表子R3とR4
との接続点間に検出器Dを接続して、素子R1と
R3の他端をアースしてなる回路を有する磁気バ
ブルメモリ装置において、X方向コイルに所定の
電流(三角波電流)を流した場合の検出器Dの出
力波形は、第7図aの従来構成のものに観察され
たノイズ信号成分pが、本発明に係わる第7図b
では消減している。 In this way, the insulating substrate 20 on which the chip 1 is mounted and the necessary circuit connections are made is assembled together with other device components by the same conventional means, and is assembled in the same manner as shown in FIGS. 1 and 2. A magnetic bubble memory device is completed, and the ground pattern 24 from the ground terminal pattern 21-2 on the back side is arranged so as to partition between the bubble detection terminal pattern 21-1 and the X-direction coil 4. Therefore, as shown in FIG. 6, a bridge circuit is constructed by the detection magnetoresistive elements R 1 and R 2 and the dummy magnetoresistive elements R 3 and R 4 , and the connection point between the elements R 1 and R 2 is and Omoteko R 3 and R 4
Detector D is connected between the connection points of element R1 and
In a magnetic bubble memory device having a circuit with the other end of R3 grounded, the output waveform of detector D when a predetermined current (triangular wave current) is passed through the X-direction coil is the conventional configuration shown in FIG. 7a. The noise signal component p observed in the
It is decreasing.
なお、上記実施例においてはバブル検出用端子
パターン21―1のみをアースパターン24が囲
うようにしている。しかし、X及びY方向以外の
他の端子パターン21―3を一諸に囲うように、
アースパターン24をパターン形成しても何んら
差支えないことを付記する。 In the above embodiment, only the bubble detection terminal pattern 21-1 is surrounded by the earth pattern 24. However, in order to enclose other terminal patterns 21-3 in directions other than the X and Y directions,
It should be noted that there is no problem in patterning the ground pattern 24.
以上説明した如く本発明によれば、駆動コイル
と基板裏面側のバブル検出用端子とのC結合によ
る静電ノイズが、バブル検出波形に付加されない
ため、その検出を容易ならしめるとともに確度を
向上し得た実用上の効果が顕著である。 As explained above, according to the present invention, electrostatic noise due to C coupling between the drive coil and the bubble detection terminal on the back side of the substrate is not added to the bubble detection waveform, making detection easier and improving accuracy. The practical effects obtained are remarkable.
第1図は磁気バブルメモリ装置の内部基本構成
を示す斜視図、第2図は前記装置の側断面図、第
3図は磁気バブルメモリチツプを表面に搭載し前
記装置に組込まれる従来構成の絶縁基板表面図
(一例)、第4図は裏面側に端子パターンを形成し
てなる前記基板と同等の従来構成絶縁基板裏面図
(一例)、第5図は本発明の一実施例に係わる磁気
バブルメモリ装置用絶縁基板の裏面図、第6図は
磁気バブルメモリ装置のバブル検出回路接続例、
第7図は第6図に示す回路を有する磁気バブルメ
モリ装置に本発明を適用する前後の検出波形を示
す一例である。
なお、図中において1は磁気バブルメモリチツ
プ、2,20は絶縁基板、3,3′,21は端子
パターン、3―1,21―2はアース端子パター
ン、21―1はバブル検出用端子パターン、1
4,24は表面側と裏面側のアースパターンであ
る。
FIG. 1 is a perspective view showing the basic internal configuration of a magnetic bubble memory device, FIG. 2 is a side sectional view of the device, and FIG. 3 is an insulating device with a conventional structure that is incorporated into the device with a magnetic bubble memory chip mounted on the surface. A front view of a board (an example), FIG. 4 is a back view of a conventional insulating board equivalent to the above board with a terminal pattern formed on the back side (an example), and FIG. 5 is a magnetic bubble according to an embodiment of the present invention. Figure 6 is a back view of an insulating substrate for a memory device, and an example of bubble detection circuit connection for a magnetic bubble memory device.
FIG. 7 is an example showing detected waveforms before and after the present invention is applied to the magnetic bubble memory device having the circuit shown in FIG. 6. In the figure, 1 is a magnetic bubble memory chip, 2 and 20 are insulating substrates, 3, 3', and 21 are terminal patterns, 3-1 and 21-2 are ground terminal patterns, and 21-1 is a bubble detection terminal pattern. ,1
4 and 24 are ground patterns on the front side and the back side.
Claims (1)
れる絶縁基板上に搭載され、前記チツプに形成さ
れたバブル発生器やバブル検出器等の電極が、前
記絶縁基板の表面側部に形成された外部リードの
はんだ付接続用の複数個の表面側端子パターンに
それぞれ導体パターンを介して接続され、且つ前
記絶縁基板の表面には絶縁層を介して前記導体パ
ターンを覆うアースパターンの両端が、前記端子
パターンのうちのアース端子パターンに接続して
形成された磁気バブルメモリ装置において、前記
端子パターンは前記絶縁基板の側面を通して該絶
縁基板の裏面側部に形成された複数個の裏面側端
子パターンに夫々接続されており、且つ前記絶縁
基板の裏面には前記裏面側端子パターンのうちの
アース端子パターンより引出され、前記裏面側端
子パターンのうちの少なくともバブル検出用端子
パターンを囲む裏面側アースパターンが形成され
ていることを特徴とした磁気バブルメモリ装置。1 A magnetic bubble memory chip is mounted on an insulating substrate covered with a drive coil, and electrodes such as a bubble generator and a bubble detector formed on the chip are connected to external leads formed on the front side of the insulating substrate. A ground pattern is connected to a plurality of surface-side terminal patterns for soldering connections via conductor patterns, and covers the conductor patterns with an insulating layer on the surface of the insulating substrate. In a magnetic bubble memory device formed by connecting to a ground terminal pattern, the terminal pattern is connected to a plurality of back side terminal patterns formed on a back side of the insulating substrate through a side surface of the insulating substrate. Further, a back side ground pattern is formed on the back side of the insulating substrate, and is drawn out from the ground terminal pattern of the back side terminal patterns and surrounds at least the bubble detection terminal pattern of the back side terminal patterns. A magnetic bubble memory device characterized by:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14899380A JPS5774877A (en) | 1980-10-24 | 1980-10-24 | Magnetic bubble memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14899380A JPS5774877A (en) | 1980-10-24 | 1980-10-24 | Magnetic bubble memory device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5774877A JPS5774877A (en) | 1982-05-11 |
JPS6113316B2 true JPS6113316B2 (en) | 1986-04-12 |
Family
ID=15465295
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14899380A Granted JPS5774877A (en) | 1980-10-24 | 1980-10-24 | Magnetic bubble memory device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5774877A (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60239988A (en) * | 1984-05-14 | 1985-11-28 | Fujitsu Ltd | Magnetic bubble memory controller |
JP4752411B2 (en) * | 2004-10-13 | 2011-08-17 | 日産自動車株式会社 | Body frame structure |
DE112010005328B4 (en) | 2010-03-02 | 2016-01-21 | Toyota Jidosha Kabushiki Kaisha | Vehicle frame member |
DE112010005329B4 (en) | 2010-03-02 | 2017-07-13 | Toyota Jidosha Kabushiki Kaisha | Vehicle front structure |
-
1980
- 1980-10-24 JP JP14899380A patent/JPS5774877A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5774877A (en) | 1982-05-11 |
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