JPS61131855U - - Google Patents
Info
- Publication number
- JPS61131855U JPS61131855U JP1528785U JP1528785U JPS61131855U JP S61131855 U JPS61131855 U JP S61131855U JP 1528785 U JP1528785 U JP 1528785U JP 1528785 U JP1528785 U JP 1528785U JP S61131855 U JPS61131855 U JP S61131855U
- Authority
- JP
- Japan
- Prior art keywords
- pressure sensor
- light
- metal layer
- chip
- semiconductor pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 7
- 238000010586 diagram Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
Description
第１図は本考案の一実施例の構成図、第２図は
従来の半導体圧力センサの一実施例の構成図であ
る。
図面中、１はＳｉＯ２、２は遮光用金属層、３
はパツド部、４は圧力感応部、５は配線金属、６
はＳｉ―ダイアフラム、１１は圧力導入部、１２
は圧力導入部、１３は半導体圧力センサ、１４は
ダイアフラムである。
FIG. 1 is a block diagram of an embodiment of the present invention, and FIG. 2 is a block diagram of an embodiment of a conventional semiconductor pressure sensor. In the drawing, 1 is SiO 2 , 2 is a light-shielding metal layer, 3 is
is the pad part, 4 is the pressure sensitive part, 5 is the wiring metal, 6
is a Si-diaphragm, 11 is a pressure introduction part, 12
13 is a semiconductor pressure sensor, and 14 is a diaphragm.
Claims (1)
用金属層を設けた事を特徴とする半導体圧力セン
サ。 (2) 前記遮光用金属層は、チツプの表面全面に
形成したことを特徴とする実用新案登録請求の範
囲第１項記載の半導体圧力センサ。 (3) 前記遮光用金属層は、チツプの圧力感応部
上部に形成したことを特徴とする実用新案登録請
求の範囲第１項記載の半導体圧力センサ。 (4) 前記遮光用金属層は、チツプの裏面全面に
形成したことを特徴とする実用新案登録請求の範
囲第１項記載の半導体圧力センサ。 (5) 前記遮光用金属層は、チツプの圧力感応部
下部に形成したことを特徴とする実用新案登録請
求の範囲第１項記載の半導体圧力センサ。[Scope of Claim for Utility Model Registration] (1) A semiconductor pressure sensor characterized in that a semiconductor pressure sensor chip is provided with a light-shielding metal layer. (2) The semiconductor pressure sensor according to claim 1, wherein the light-shielding metal layer is formed on the entire surface of the chip. (3) The semiconductor pressure sensor according to claim 1, wherein the light-shielding metal layer is formed above the pressure-sensitive portion of the chip. (4) The semiconductor pressure sensor according to claim 1, wherein the light-shielding metal layer is formed on the entire back surface of the chip. (5) The semiconductor pressure sensor according to claim 1, wherein the light-shielding metal layer is formed below the pressure-sensitive portion of the chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1528785U JPS61131855U (en) | 1985-02-07 | 1985-02-07 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1528785U JPS61131855U (en) | 1985-02-07 | 1985-02-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61131855U true JPS61131855U (en) | 1986-08-18 |
Family
ID=30500996
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1528785U Pending JPS61131855U (en) | 1985-02-07 | 1985-02-07 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61131855U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009180622A (en) * | 2008-01-31 | 2009-08-13 | Alps Electric Co Ltd | Piezoresistance type physical quantity sensor and manufacturing method of the same |
-
1985
- 1985-02-07 JP JP1528785U patent/JPS61131855U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009180622A (en) * | 2008-01-31 | 2009-08-13 | Alps Electric Co Ltd | Piezoresistance type physical quantity sensor and manufacturing method of the same |
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