JPS61129854A - Manufacture of thin film conductor - Google Patents

Manufacture of thin film conductor

Info

Publication number
JPS61129854A
JPS61129854A JP25240484A JP25240484A JPS61129854A JP S61129854 A JPS61129854 A JP S61129854A JP 25240484 A JP25240484 A JP 25240484A JP 25240484 A JP25240484 A JP 25240484A JP S61129854 A JPS61129854 A JP S61129854A
Authority
JP
Japan
Prior art keywords
thin film
conductor
aluminum
substrate
photo resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25240484A
Other languages
Japanese (ja)
Inventor
Masao Kyono
京野 昌男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP25240484A priority Critical patent/JPS61129854A/en
Publication of JPS61129854A publication Critical patent/JPS61129854A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/01Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
    • H01L27/016Thin-film circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

PURPOSE:To manufacture the copper thin film conductor by facilitating its soldering by a method wherein an Al thin film is adhered on a substrate and formed into a photo resist pattern by photoetching, and next a copper thin film is adhered and formed into thin film conductor by lift-off. CONSTITUTION:Dichromium or titanium 2 for adhesion reinforcement is adhered on the substrate 1, and the Al thin film 3 is adhered. Thereafter, a photo resist is applied, exposed to ultraviolet rays with a photo mask, and then developed into the desired photo resist pattern 4. Next,the photo resist is exfoliated by removing the unnecessary metallic parts by etching. Then, another photo resist pattern 5 is formed on the Al thin film, and the copper thin film 6 is adhered. The unnecessary Al thin film is removed together with the photo resist by lift-off using flux or an adhesive tape, thus producing a desired copper thin film conductor.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は混成集積回路の薄膜導体に関し、特に導体とし
てアルミ及び銅薄膜を用い外部引出し端子、能動素子、
受動素子との接続をボンディング、半田付けにより行な
う導体回路の製造方法に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a thin film conductor for a hybrid integrated circuit, and in particular to a thin film conductor for a hybrid integrated circuit, in particular for use in external lead terminals, active elements, etc. using aluminum and copper thin films as conductors.
The present invention relates to a method of manufacturing a conductor circuit in which connection with passive elements is performed by bonding and soldering.

〔従来の技術〕[Conventional technology]

従来、混成集積回路において薄膜導体回路の製造方法は
、基板上にタンタル系等の受動素子用金属薄膜を被着し
た後、接着補強用中間層としてのニクロム等薄膜を被着
し、その後金薄膜全被着し、ホトエツチング法により抵
抗体等回路パターン、及び導電体回路パターンを形成す
る。又は、基板上に接着補強用ニクロム等金属薄膜をそ
の後銅薄膜を被着、更にアルミ薄膜を被着し、ホトレジ
スト、選択エツチング方法によりアルミ薄膜部と、銅薄
膜上のアルミを部分的に除去した銅薄膜部からなる導体
回路パターンを形成する。一般に金薄膜からなる導体i
は、外部引出し端子、受動素子。
Conventionally, the manufacturing method for thin film conductor circuits in hybrid integrated circuits is to deposit a thin film of tantalum or other passive element metal on a substrate, then deposit a thin film of nichrome or the like as an intermediate layer for adhesion reinforcement, and then deposit a gold thin film. After the entire surface is deposited, a resistor circuit pattern and a conductor circuit pattern are formed by photo-etching. Alternatively, a metal thin film such as nichrome for adhesion reinforcement was applied on the substrate, then a copper thin film was applied, and then an aluminum thin film was applied, and the aluminum thin film portion and the aluminum on the copper thin film were partially removed using photoresist and selective etching methods. A conductor circuit pattern consisting of a copper thin film portion is formed. Conductor i generally made of a thin gold film
is an external lead terminal and a passive element.

能動素子をボンデノグ及び半田付により接続される。ア
ルミ薄膜と銅薄膜部からなる導体部に、アルミに対する
半田付性、銅に対するポンディング性の困難さエリ、ア
ルミ薄膜部にはボンディングによる、又鋼薄膜部につい
ては半田付による外部端子、受動素子、能動素子の接続
がなされている。
Active elements are connected by bonding and soldering. The conductor part consists of an aluminum thin film part and a copper thin film part, and there are difficulties in soldering to aluminum and bonding to copper.External terminals and passive elements are made by bonding for the aluminum thin film part and soldering for the steel thin film part. , active element connections are made.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上述した従来の導電体製造方法において前者はボンディ
ング、半田付に対し、金の特性上酸化しがたいため比較
的容易に接続出来るが、高価なことから製品のコストが
高くなる欠点がある。後者においては安価な金属である
が酸化されやすい性質がある。又基板−ニクロムー銅−
アルミの構成より、ホトレジストを用い選択エツチング
する際アルミ面を膜部エッチングし銅の露出面を形成す
るか、アルミ面にホトレジストパターンを形成した後、
アルミ、銅を同時的にエツチングし導体回路パターンを
形成、しかる後ホトレジストを除去し、再度、一部のア
ルミを露出したホトレジストパターンを形成し、その後
アルミをエツチングする製造方法となるため、アルミ金
徐々にエツチングした終点において、銅とアルミエツチ
ング液(fll、  +7ン酸、硝酸系)が接し、鋼面
の腐食を伴ない易く酸化を生じることにもなり半田付性
を低下させる欠点となる。
In the conventional conductor manufacturing method described above, the former method can be used for bonding and soldering because it is difficult to oxidize due to the characteristics of gold, so it can be connected relatively easily, but it has the disadvantage of increasing the cost of the product because it is expensive. The latter is a cheap metal, but has the property of being easily oxidized. Also, the substrate - Nichrome - Copper -
Depending on the structure of the aluminum, when performing selective etching using a photoresist, the film portion of the aluminum surface is etched to form an exposed copper surface, or after a photoresist pattern is formed on the aluminum surface,
The manufacturing method involves simultaneously etching aluminum and copper to form a conductor circuit pattern, then removing the photoresist, forming a photoresist pattern that exposes a portion of the aluminum again, and then etching the aluminum. At the end point of gradual etching, the copper and aluminum etching solution (FLL, +7 phosphoric acid, nitric acid type) come into contact with each other, which tends to corrode the steel surface and cause oxidation, which is a disadvantage in reducing solderability.

〔問題点を解決するための手段〕[Means for solving problems]

本発明は、混成集積回路の薄膜導体回路の形成に関して
銅薄膜とアルミ薄膜からなる導体囲路におい−で、鋼薄
膜導体部の腐食、酸化を最小限にすることを目的とし、
基板に被着したタンタル系受動素子薄膜上に又は直接基
板上に、ニクロム、チタン等の接着補強用金属薄膜を被
着した後、アルミ薄膜を全面被着して、その後ホトエツ
チング法により所望アルミ導体パターンや受動素子パタ
ーンを形成し、ホトレジストパター離し、次に再び所望
ホトレジストパターンをアルミ導体パターン上に形成し
、しかる後銅薄膜を被着し、IJ7トオフ法によりアル
ミ薄膜導体上に鋼薄膜導体部を重ね合わせて形成する製
造方法を有する。
The purpose of the present invention is to minimize corrosion and oxidation of steel thin film conductor parts in a conductor enclosure consisting of a copper thin film and an aluminum thin film in connection with the formation of a thin film conductor circuit of a hybrid integrated circuit.
After a metal thin film such as nichrome or titanium for adhesion reinforcement is deposited on the tantalum passive element thin film deposited on the substrate or directly on the substrate, an aluminum thin film is deposited on the entire surface, and then the desired aluminum conductor is formed by photo-etching. A pattern or a passive element pattern is formed, the photoresist pattern is released, and then a desired photoresist pattern is formed again on the aluminum conductor pattern, after which a copper thin film is deposited, and a steel thin film conductor section is formed on the aluminum thin film conductor by the IJ7 to-off method. It has a manufacturing method in which it is formed by overlapping.

〔実施例〕〔Example〕

次VC1本発明について図面を参照して説明する。 Next, the VC1 invention will be explained with reference to the drawings.

第1図は本発明の一実施例の縦断面図でるる。FIG. 1 is a longitudinal sectional view of one embodiment of the present invention.

第1図(alに示すように基板1上に接着補強用ニクロ
ムやチタ/2を接着して、次にアルミ薄膜3を゛ 被着
し、その後ホトレジストを塗布、ホトマスクを用い、紫
外Iw!露光、現像し所望のホトレジストバター/l−
形成する(第1図φ))。
As shown in Figure 1 (al), nichrome or titanium/2 for adhesion reinforcement is adhered onto the substrate 1, and then a thin aluminum film 3 is deposited, and then photoresist is applied and exposed to ultraviolet Iw! using a photomask. , developed and desired photoresist butter/l-
(Fig. 1 φ)).

次に、エツチングにより不要金属部分全除去し、ホトレ
ジス)1−剥離する。(第1図(C))。次に再びホト
レジストパターン51−アルミ薄膜上に形成し、その後
鋼薄膜6を被着する(第1図(d) )。しかる後に溶
剤又は粘着テープ等を用いたり7トオフ法により、ホト
レジスト毎、不要アルミ薄膜金除去し、所望の鋼薄膜導
体とする(第1図(C1)。
Next, all unnecessary metal parts are removed by etching, and the photoresist is peeled off. (Figure 1 (C)). Next, a photoresist pattern 51 is again formed on the aluminum thin film, and then a steel thin film 6 is applied (FIG. 1(d)). Thereafter, unnecessary aluminum thin film gold is removed from each photoresist using a solvent or adhesive tape or by a 7-off method to obtain a desired steel thin film conductor (FIG. 1 (C1)).

〔発明の効果〕〔Effect of the invention〕

以上説明した様に、本発明は、外部端子、能動素子、受
動素子を半田付及びボンディングの両方の接続が可能な
薄膜導体回路においてアルミ薄膜を被着し、ホトエツチ
ング法に19アルミパターン形戊後再びホトレジストバ
ター/l−形成し、次に鋼薄pt−*着しリフトオフ法
による鋼薄膜導体部を形成することvc工Q、アルミエ
ツチング液との接触を伴なわないため酸化を極力防止す
ることが可能となり、銅薄膜導体の半田付が従来より容
易になる効果がある。
As explained above, the present invention provides a thin film conductor circuit in which external terminals, active elements, and passive elements can be connected by both soldering and bonding. Form the photoresist butter/l- again, then apply the steel thin PT-* to form the steel thin film conductor part by the lift-off method. VC process Q, prevent oxidation as much as possible since it does not involve contact with the aluminum etching solution. This has the effect of making soldering of copper thin film conductors easier than before.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の実施例金示す縦断面図金示す。 1・・・・・・基板、2・・・・・・ニクロム又はチタ
/、3・・・・・・アルミ、4. 5−・・・・・ホト
レジスト、6・・・・・・銅。 代理人 弁理士  内 原   旨、、、’ −2S’
、、7r、小′・2、−3゜
FIG. 1 is a longitudinal sectional view showing an embodiment of the present invention. 1...Substrate, 2...Nichrome or titanium/, 3...Aluminum, 4. 5-... Photoresist, 6... Copper. Agent Patent Attorney Original Purpose...'-2S'
,,7r, small'・2, -3°

Claims (1)

【特許請求の範囲】[Claims]  基板上にタンタル系受動素子用金属素子用金属薄膜を
被着した後、又は基板上に接着補強用金属薄膜を被着し
た後、導電体用アルミ薄膜を被着する工程と前記導体膜
、接着補強膜、受動素子用金属膜をホトエッチング法に
より所望パターンに形成する工程と前記パターン形成後
の基板にホトレジストを塗布し、所望ホトレジストパタ
ーンをアルミ導体部の一部に形成する工程と、前記パタ
ーン形成後の基板に銅薄膜を被着し、リフトオフ法によ
りホトレジストと不要金属膜を除去する工程とを含むこ
とを特徴とする薄膜導体の製造方法。
After depositing a metal thin film for a tantalum-based passive element on a substrate, or after depositing a metal thin film for adhesion reinforcement on a substrate, a process of depositing an aluminum thin film for a conductor, the conductor film, and adhesion. a step of forming a reinforcing film and a metal film for passive elements into a desired pattern by photoetching; a step of applying a photoresist to the substrate after the pattern formation; and a step of forming a desired photoresist pattern on a part of the aluminum conductor section; 1. A method for manufacturing a thin film conductor, comprising the steps of depositing a copper thin film on a formed substrate and removing the photoresist and unnecessary metal film by a lift-off method.
JP25240484A 1984-11-29 1984-11-29 Manufacture of thin film conductor Pending JPS61129854A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25240484A JPS61129854A (en) 1984-11-29 1984-11-29 Manufacture of thin film conductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25240484A JPS61129854A (en) 1984-11-29 1984-11-29 Manufacture of thin film conductor

Publications (1)

Publication Number Publication Date
JPS61129854A true JPS61129854A (en) 1986-06-17

Family

ID=17236865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25240484A Pending JPS61129854A (en) 1984-11-29 1984-11-29 Manufacture of thin film conductor

Country Status (1)

Country Link
JP (1) JPS61129854A (en)

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