JPS61127278A - Automatic exposure electronic camera - Google Patents
Automatic exposure electronic cameraInfo
- Publication number
- JPS61127278A JPS61127278A JP59248614A JP24861484A JPS61127278A JP S61127278 A JPS61127278 A JP S61127278A JP 59248614 A JP59248614 A JP 59248614A JP 24861484 A JP24861484 A JP 24861484A JP S61127278 A JPS61127278 A JP S61127278A
- Authority
- JP
- Japan
- Prior art keywords
- electronic camera
- electric charge
- electrode
- output
- shutter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 claims description 14
- 230000035945 sensitivity Effects 0.000 claims 2
- 230000005622 photoelectricity Effects 0.000 claims 1
- 230000001960 triggered effect Effects 0.000 claims 1
- 230000000994 depressogenic effect Effects 0.000 abstract 1
- 238000003384 imaging method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 101000857682 Homo sapiens Runt-related transcription factor 2 Proteins 0.000 description 1
- 102100025368 Runt-related transcription factor 2 Human genes 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は固体撮像素子を用いて静止I7像を撮像・記
録する電子カメラに係り、特にその自77j1光方式に
関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an electronic camera that captures and records a still I7 image using a solid-state image pickup device, and particularly relates to its I77J1 optical system.
C0D−?MO8等からなる固体撮像素子を用いた撮像
装置は、動画用の撮像用であるビデオカメラとして既に
実用化され始めているが、最近ではこの固体撮像素子を
静止画像の撮像に利用するいわゆる電子カメラが注目さ
れている。C0D-? Imaging devices using solid-state image sensors such as MO8 have already begun to be put into practical use as video cameras for capturing moving images, but recently so-called electronic cameras that use solid-state image sensors to capture still images have been introduced. Attention has been paid.
ビデオカメラの場合、感光面の露光時間は通常テレビジ
ョンの1フレームに相当f61/30 秒一定である。In the case of a video camera, the exposure time of the photosensitive surface is usually constant f61/30 seconds, which corresponds to one frame of television.
これに対し電子カメラでは従来からのフィルム使用カメ
ラと同様その露光時間は数秒〜171000秒程度と広
範囲に変化できることが要求される。On the other hand, electronic cameras, like conventional cameras using film, are required to be able to vary the exposure time over a wide range from several seconds to about 171,000 seconds.
このためビデオカメラでは問題とならなかった露光時間
の制御と信号読み出しのタイミングがX要な問題となっ
てくる。For this reason, exposure time control and signal readout timing, which were not problems with video cameras, have become important issues.
すなわち適正露光時間より短いと入射光による電荷が少
ないため雑音電荷との比がとnずSINが悪い画像しか
再現できない。逆に遜正露光時間より長いと各感光部に
過剰電荷が生じ再生画像は一定入射光以上の場所は白と
な9.いわゆる1白つぶれ”となる。更に過剰電荷が他
の画素迄もれ出しプルーミングが起る。すなわち露光時
間を正確に制御することは最良画像を得る為に必要不可
欠の事である。That is, if the exposure time is shorter than the appropriate exposure time, the charge due to the incident light is small, so the ratio to the noise charge decreases, and only an image with a poor SIN can be reproduced. On the other hand, if the exposure time is longer than the normal exposure time, excess charge will occur in each photosensitive area, and the reproduced image will be white in areas where the incident light is above a certain level.9. In addition, excess charge leaks to other pixels, causing pluming. In other words, accurately controlling the exposure time is essential to obtaining the best image.
この発明の目的は常に最適露光時間となる様にシャッタ
ーあるいは読み出しタイミングを制御しS/Nの良い静
止画像が得られるようにシた自動露出電子カメラを提供
することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide an automatic exposure electronic camera that controls the shutter or readout timing so that the exposure time is always optimal, so that still images with good S/N ratio can be obtained.
この発明は固体撮像素子の各画Jに一定以上の電荷が蓄
積されたことを検知する電極を設け、入射光によ)画素
4二電荷が蓄積され、一定以上になると前記検知電極の
電位が変化し、その変化が一定値以上になった時に撮像
素子よプ信号電荷を読み出しくシャッターのある場合は
シャッターを閉じる)、記録するようにしたものである
。In this invention, each image J of a solid-state image sensor is provided with an electrode that detects when a charge of a certain level or more is accumulated. When the change exceeds a certain value, the image pickup device reads out the signal charge (if it has a shutter, closes the shutter) and records it.
この発明によれば特別な露光量測定手段も必要とせずま
た信号を得る固体撮像素子自身で読み出しタイミング(
又はシャッタ一時間)を制御しているため外部温度変化
、入射光の波長等によらず常に正確なX光量制御が可能
となり最適S/Nの静止画信号を得ることができる。According to this invention, there is no need for any special exposure measurement means, and the readout timing (
Since the X light amount is always controlled accurately regardless of changes in external temperature, wavelength of incident light, etc., a still image signal with an optimum S/N ratio can be obtained.
第1図はこの発明の一実施例に係わる電子カメラの構成
を示すものである。FIG. 1 shows the configuration of an electronic camera according to an embodiment of the present invention.
図において、被写体からの光1は撮像レンズ2、絞93
、シャッター5等を経由して固体撮像素子6に導かれる
。シャッター5は必らずしも必要としない。In the figure, light 1 from the subject is transmitted through the imaging lens 2 and the aperture 93.
, the shutter 5, etc., and are guided to the solid-state image sensor 6. The shutter 5 is not necessarily required.
固体撮像素子6は例えば第2図(;示すような公知のイ
ンターライン転送凰CCD1像素子を用いる。As the solid-state image sensor 6, for example, a known interline transfer CCD1 image element as shown in FIG. 2 is used.
この撮像素子はフォトダイオードの様な゛光電変換素子
から成る画素21を二次元に配列して感光面nを構成し
て、各画素21に人射光tに応じた電荷を蓄積してその
蓄積電荷をシフトパルスFS i二より舐直転送部23
に移し、水平転送部夙を経て出力回路すから電気信号と
して取り出すようにしたものである。This image sensor has a photosensitive surface n formed by arranging pixels 21 consisting of photoelectric conversion elements such as photodiodes in a two-dimensional manner, and accumulates charges in each pixel 21 in accordance with the amount of human light t. Shift pulse FS i from the second lick direct transfer section 23
The electrical signal is then transferred to the horizontal transfer section and output from the output circuit as an electrical signal.
垂直転送部23にはφV、水平転送部ス(;φ■なるク
ロックパルスを加えること(:より電荷転送を行う。こ
の撮像素子で過剰電荷検出電極jを設ける。Charge transfer is performed by applying a clock pulse φV to the vertical transfer section 23 and a clock pulse φV to the horizontal transfer section 23. An excess charge detection electrode j is provided in this image sensor.
画素21に一定値以上の電荷が蓄積されるとそれ以上の
電荷は検出@@26に流れ込む。この過剰電荷は全画一
から集められVOFDなる電圧変化を発生する。1画素
部の断面構造の一例の模式図を第3図に示す。Nilシ
リコン器上c p m層32を形成し、更に光電変換部
となる31、垂直転送部となる易、過剰電荷検出電極と
なるあの各n型1−を形成する。When a charge of a certain value or more is accumulated in the pixel 21, the excess charge flows into the detection@@26. This excess charge is collected from all the pixels and generates a voltage change called VOFD. FIG. 3 shows a schematic diagram of an example of the cross-sectional structure of one pixel section. A CPM layer 32 is formed on the Nil silicon layer, and furthermore, a photoelectric conversion section 31, a vertical transfer section 31, and an n-type layer 1- which becomes an excess charge detection electrode are formed.
形成する。Form.
上記構成の撮像素子を使用した場合の撮像動作を第5図
のタイミングチャートを用いて説明する。The imaging operation when using the imaging device with the above configuration will be described using the timing chart of FIG. 5.
まずシャッターボタン12を押すとシフトノ(ルスFS
が発生し画素21 に蓄積されている蓄積電荷を掃き出
し垂直、水平の各転送部により外部へ捨°て去る―その
後シャッターが開く。各画素21には入射光jkに比例
した電荷が蓄積され始める。一定時間経過後入射光強度
の高い所(高4度部分)の画素の電荷が検知電極あ(−
流入し始める。その電荷は増幅器ごで増幅される。26
に流入し九砥荷が所定量となると増幅器Iの出力Vrは
電圧比較器あの比較電圧Vra1よシ高くなυ、電圧比
較4四の出力は10 m状態から″1″状態へ変化しそ
の変化はラッチ回路29によp″′1”状態)二保持さ
れる。この2ツテ出力VRi二よシシャッターを閉じシ
フトパルスFSを発生し、倹知竜樋冗へ流入する電荷を
制御するコントロールゲートimの電圧を下げ検知電極
あへ信号電荷が流入しない様にする。First, press the shutter button 12 and the shift button (Lus FS
is generated, and the accumulated charge accumulated in the pixel 21 is swept out and discarded to the outside by the vertical and horizontal transfer sections - then the shutter opens. Charge proportional to the incident light jk begins to accumulate in each pixel 21. After a certain period of time has elapsed, the electric charge of the pixel in the area where the incident light intensity is high (high 4 degree area) will change to the detection electrode (-
It starts to flow in. The charge is amplified by each amplifier. 26
When the nine aerosol loads reach a predetermined amount, the output Vr of the amplifier I becomes higher than the comparison voltage Vra1 of the voltage comparator υ, and the output of the voltage comparator 44 changes from the 10 m state to the "1" state and that change. is held in the p''1'' state by the latch circuit 29. This two-way output VRi closes the shutter and generates a shift pulse FS, and lowers the voltage of the control gate im that controls the charge flowing into the sensor electrode so that the signal charge does not flow into the detection electrode A.
次に喬直転送部る。水平転送部24に谷々クロックパル
スφマ、φ■が供給され出力回路6より撮像出力が読み
出され信号処理回路8によシ記録用信号に変換され記録
媒体10に書き込まれる。Next is Qiao Zhi Transfer Department. Valley clock pulses φ and φ are supplied to the horizontal transfer section 24, and the imaging output is read out from the output circuit 6, converted into a recording signal by the signal processing circuit 8, and written to the recording medium 10.
この様にして各画素に蓄積される電荷を可能な限シ多く
し、常+:S/Nの良い画像信号を得ることができる。In this way, the charge accumulated in each pixel can be increased as much as possible, and an image signal with a good S/N ratio can always be obtained.
ま7′2:、3J!!、元時等で白つぶれを起しても暗
部の像を虚映したいことがおる。この時は過剰電荷検知
菟−へ流入する電荷を制御する制御電圧VOFGを変化
させたり、電圧比較器の基準電圧を変えること(−より
任意の絖み出しタイミング(シャッタ一時間)を得るこ
とが可能である。Ma7'2:, 3J! ! There are times when you want to create a virtual image of the dark areas even if the white areas are blown out. At this time, you can change the control voltage VOFG that controls the charge flowing into the excess charge detection circuit, or change the reference voltage of the voltage comparator (-) to obtain an arbitrary start-up timing (shutter one hour). It is possible.
上記例ではシャッターを使用した例を示したが、全画素
電荷を同時(;当直シフトレジスタも二転送する場合は
、シャッターは必らずしも必要としない。Although the above example uses a shutter, the shutter is not necessarily required if all pixel charges are transferred simultaneously (and the duty shift register is also transferred twice).
また第3図の例では平面的に過剰屯荷検出砥極を設けた
が第4図の如く垂直方向にn−p−n桝造を作成し基板
電位変化を検知しタイミングfilll@を行うことも
可能である。In addition, in the example of Fig. 3, the excess load detection abrasive pole is provided in a plane, but as shown in Fig. 4, an n-p-n structure is created in the vertical direction to detect changes in the substrate potential and perform timing fill@. is also possible.
弗1図はこの開明の一笑施例(−係わる電子カメラの構
成を示す図、第2図は同実施例における固体撮像素子の
構成を概念的に示す図、弗3図、第4図は第2図の1画
素部の断面図の一例であり。
第5図は同実施例こおける連袂動作のタイミングチャー
トである。
1・・・被写体光 2・・・連像レンズ 3・・・
絞95・・・シャッター 6・・・固体撮像素子1
2・・・シャッターボタン 凪・・・画素n・・・感
光面 あ・・・過剰砥荷検出砥他n・・・増幅
器 あ・・・嵯圧比較器四・・・ラッチ回路
代理人 弁理士 則 近 yI!i 佑(ほか1名
)第 1 図
第 2 図
アン7 コ)べ1−7
第3図
第 4 図Figure 1 is a diagram showing the configuration of an electronic camera related to this invention, Figure 2 is a diagram conceptually showing the configuration of a solid-state image sensor in this embodiment, Figures 3 and 4 are This is an example of a cross-sectional view of one pixel portion in Fig. 2. Fig. 5 is a timing chart of the continuous operation in the same embodiment. 1... Subject light 2... Continuous image lens 3...
Aperture 95... Shutter 6... Solid-state image sensor 1
2... Shutter button Calm... Pixel n... Photosensitive surface A... Excessive abrasive load detection, etc. n... Amplifier A... Pressure comparator 4... Latch circuit agent Patent attorney Rule close yI! i Yu (and 1 other person) Figure 1 Figure 2 Figure An 7 C) Be 1-7 Figure 3 Figure 4
Claims (7)
配列して構成した感光面を有する固体撮像素子を用いて
静止画像を撮像し記録する電子カメラにおいて、前記固
体撮像素子の画素に一定以上の電荷が蓄積されたことを
検知する電極を設け、その電極の電位の変化が一定値以
上になった時に前記画素の信号を読み出すようにしたこ
とを特徴とする自動露出電子カメラ。(1) In an electronic camera that captures and records still images using a solid-state image sensor having a photosensitive surface configured by two-dimensionally arranging pixels that accumulate charges according to incident photoelectricity, the pixels of the solid-state image sensor An automatic exposure electronic camera characterized in that an electrode is provided for detecting that a certain amount of charge has been accumulated, and a signal from the pixel is read out when a change in the potential of the electrode exceeds a certain value.
ャッターを閉じることを特徴とする特許請求の範囲第1
項記載の自動露出電子カメラ。(2) Claim 1 characterized in that it has a shutter and closes this shutter at the same time as reading starts.
Auto-exposure electronic camera as described in Section 1.
一定値にし読み出し時に検出電極に電荷が流出しない様
にすることを特徴とする特許請求の範囲第1項記載の自
動露出電子カメラ。(3) The automatic exposure electronic camera according to claim 1, characterized in that the potential of the excess charge detection electrode is set to a constant value at the same time as readout is started to prevent charges from flowing out to the detection electrode during readout.
り過剰電荷検出の感度を制御することを特徴とする特許
請求の範囲第1項記載の自動露出電子カメラ。(4) The automatic exposure electronic camera according to claim 1, wherein the sensitivity of excessive charge detection is controlled by biasing the voltage of the detection electrode to a constant value.
御電極を設けその電極に加える電圧により過剰電荷検出
の感度を制御することを特徴とする特許請求の範囲第1
項記載の自動露出電子カメラ。(5) A control electrode is provided to control the amount of charge flowing into the excess charge detection electrode, and the sensitivity of excess charge detection is controlled by the voltage applied to the electrode.
Auto-exposure electronic camera as described in Section 1.
り基準電位と比較し基準電位より大きくなった時にラッ
チ回路をトリガしラッチ回路の出力により読み出し開始
をすることを特徴とする特許請求の範囲第1項記載の自
動露出電子カメラ。(6) The potential of the excess charge detection electrode is amplified and compared with a reference potential using a voltage comparator, and when the potential becomes larger than the reference potential, a latch circuit is triggered and reading is started by the output of the latch circuit. Auto-exposure electronic camera according to scope 1.
タイミングを変化させることを特徴とする特許請求の範
囲第1項または第6項記載の自動露出電子カメラ。(7) The automatic exposure electronic camera according to claim 1 or 6, characterized in that the readout start timing is changed by changing the reference potential.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59248614A JPS61127278A (en) | 1984-11-27 | 1984-11-27 | Automatic exposure electronic camera |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59248614A JPS61127278A (en) | 1984-11-27 | 1984-11-27 | Automatic exposure electronic camera |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61127278A true JPS61127278A (en) | 1986-06-14 |
Family
ID=17180733
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59248614A Pending JPS61127278A (en) | 1984-11-27 | 1984-11-27 | Automatic exposure electronic camera |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61127278A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63309073A (en) * | 1987-06-10 | 1988-12-16 | Omron Tateisi Electronics Co | Still image pickup camera |
JPH01205675A (en) * | 1988-02-12 | 1989-08-18 | Canon Inc | Controller for solid-state image pickup device |
JPH01232887A (en) * | 1988-03-14 | 1989-09-18 | Canon Inc | Electronic still camera |
JPH04360478A (en) * | 1991-06-07 | 1992-12-14 | Matsushita Electric Ind Co Ltd | Solid-state image pickup element |
-
1984
- 1984-11-27 JP JP59248614A patent/JPS61127278A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63309073A (en) * | 1987-06-10 | 1988-12-16 | Omron Tateisi Electronics Co | Still image pickup camera |
JPH01205675A (en) * | 1988-02-12 | 1989-08-18 | Canon Inc | Controller for solid-state image pickup device |
JPH01232887A (en) * | 1988-03-14 | 1989-09-18 | Canon Inc | Electronic still camera |
JPH04360478A (en) * | 1991-06-07 | 1992-12-14 | Matsushita Electric Ind Co Ltd | Solid-state image pickup element |
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