JPS61125144A - Capillary chip for wire bonding - Google Patents
Capillary chip for wire bondingInfo
- Publication number
- JPS61125144A JPS61125144A JP59247654A JP24765484A JPS61125144A JP S61125144 A JPS61125144 A JP S61125144A JP 59247654 A JP59247654 A JP 59247654A JP 24765484 A JP24765484 A JP 24765484A JP S61125144 A JPS61125144 A JP S61125144A
- Authority
- JP
- Japan
- Prior art keywords
- hard coating
- capillary chip
- wire bonding
- thin metal
- tip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
- H01L2224/78302—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、ワイヤボンディングに使用するキャピラリ
チップ、特にその耐摩耗性の改良に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a capillary chip used for wire bonding, and particularly to improvement of its wear resistance.
従来、半導体部品等の配線を、キャピラリチップを使用
したワイヤボンディングにより行なうことがなされてい
る。第４図はかかるワイヤボンディング法の工程を順次
示すものであって、図において、（１）はダイパッド、
（２）はダイパツド（１）の表面に載置された半導体チ
ップ、（３）は半導体チップ（２）の表面に形成された
アルミニウム電極、（４）はリードフィンガー、（５）
はキャピラリチップ、（６）は金属細線、（７）は金属
細線（６）との間に放電を生じさせる族ｍ電極であり一
般にトーチ電極が使用される。キャピラリチップ（５）
はその縦方向に開孔（５１）を有し、この開孔（５１）
を通して金属細ｍ（■が延びている。なお、キャピラリ
チップ（５）は前記放電を阻害しないようにセラミック
等の絶縁材料で形成されている。図においてはキャピラ
リチップ（５）はその先端部のみが示されている。2. Description of the Related Art Conventionally, wiring of semiconductor components and the like has been performed by wire bonding using capillary chips. FIG. 4 sequentially shows the steps of the wire bonding method, and in the figure, (1) is a die pad;
(2) is a semiconductor chip placed on the surface of die pad (1), (3) is an aluminum electrode formed on the surface of semiconductor chip (2), (4) is a lead finger, (5) is
(6) is a capillary chip, (6) is a thin metal wire, and (7) is a group m electrode that generates a discharge between the thin metal wire (6), and a torch electrode is generally used. Capillary tip (5)
has an opening (51) in its longitudinal direction, and this opening (51)
A metal thin m (■) extends through the capillary tip (5).The capillary tip (5) is made of an insulating material such as ceramic so as not to inhibit the discharge.In the figure, only the tip of the capillary tip (5) is shown. It is shown.
次にワイヤボンディングの各工程について説明する。ま
ず、第４図（イ）に示すように金属細線（６）の前記開
孔（５１）から突出した部分にトーチ電極（７）との間
に放電を生じさせて金属細線（６）の先端部分を溶融さ
せてボール（６１）を形成する。次に金属細線（６）と
キャピラリチップ（５）とを降下させ、第１図（ロ）に
示すようにキャピラリチップ（５）の先端加圧部でボー
ル（６１）をアルミニウム［極（３）にボールボンディ
ングし１次いで第１図（ハ）に示すようにキャピラリチ
ップ（５）をリードフィンガー（４）の方へ移動させて
１第１図に）で示すように金属細線（Ｏをリードフィン
ガー（４）に−ウェッジボンディングする。その後１キ
ヤピラリチツプ（５）を第１図（ホ）のように上昇させ
、第１図ピ）の位置に戻し、再びボール（６１）を形成
する。Next, each process of wire bonding will be explained. First, as shown in FIG. 4(a), a discharge is generated between the part of the thin metal wire (6) protruding from the opening (51) and the torch electrode (7), and the tip of the thin metal wire (6) is The parts are melted to form a ball (61). Next, the thin metal wire (6) and the capillary tip (5) are lowered, and the tip of the capillary tip (5) pressurizes the ball (61) with the aluminum [pole (3)] as shown in FIG. 1. Next, move the capillary tip (5) toward the lead finger (4) as shown in FIG. (4) - Wedge bonding is performed.Then, the first capillary chip (5) is raised as shown in Fig. 1 (E) and returned to the position shown in Fig. 1 (P) to form a ball (61) again.
かかるワイヤボンディングでは１サイクル当たり約０．
２秒要し、即ち、キャピラリチップ（５）がアルミニウ
ム電極（３）とリードフィンガー（４）の二カ所にボン
ディングを行なうのに０．２秒要し、キャピラリチップ
（５）の先端はその昇降運動による衝撃により、金属細
線（６）、アルミニウム電極（３）あるいはリードフィ
ンガー（４）との間の摩擦によって摩耗し、この摩耗が
進むと接合不良が生じ寿命が短い問題点があった。特に
、超音波併用の場合には、超音波振動がキャピラリチッ
プに加えられるため、この摩耗の問題は顕著になり５２
００万サイクル程度で使用できなくなる。In such wire bonding, approximately 0.0% per cycle is used.
It takes 2 seconds, that is, it takes 0.2 seconds for the capillary tip (5) to bond to the aluminum electrode (3) and the lead finger (4) in two places, and the tip of the capillary tip (5) moves up and down. The impact caused by the movement causes wear due to friction between the thin metal wire (6), the aluminum electrode (3), or the lead finger (4), and as this wear progresses, poor bonding occurs and the service life is shortened. In particular, when ultrasonic waves are used together, ultrasonic vibrations are applied to the capillary tip, so this wear problem becomes more pronounced52.
It becomes unusable after about 1,000,000 cycles.
この発明は１かかる問題点を解決するためになされたも
ので１耐摩耗性の優れたキャピラリチップを提供するこ
とを目的とするものである。The present invention has been made in order to solve these problems, and has the following object: to provide a capillary tip with excellent wear resistance.
この発明に係るワイヤボンディング用キャピラリチップ
は、その先端加圧部分に耐摩耗性、絶縁性を有する硬質
被膜を形成したものである。The capillary tip for wire bonding according to the present invention has a hard coating having wear resistance and insulation properties formed on the pressurized portion of the tip.
この発明においては、先端加圧部分か耐摩耗性の硬質被
膜で覆われるため、摩耗しにくい。In this invention, since the tip pressurizing portion is covered with a wear-resistant hard coating, it is less likely to wear out.
第１図はこの発明の一実施例を示す断面図であり、（５
２）は炭素からなる耐摩耗性、絶縁性の硬質被膜であっ
てキャピラリチップ（５）の先端加圧部分とその外周部
に５〜１０μｍ程度の厚さで形成されている。かかる硬
質被膜（５２）は、固体炭素をアルゴンガスを用いた放
電を利用してイオン化蒸着したり、あるいはメタン、ブ
タン、ベンゼン等のｒ＃素化合物気体をデュアルイオン
ビーム装置、直流スパッタ装置、高周波スパッタ装置、
パルスプラズマ装置あるいはイオン化蒸着装置等により
イオン化し蒸着することによりダイヤモンド構造を有す
るものとして形成するのが好ましい。かかる硬質被膜は
従来のセラミックの硬さく一般にＨマ２０００〜２３０
０程度）より高いＨＶ２３００以上の硬さが得られる。FIG. 1 is a cross-sectional view showing one embodiment of the present invention.
2) is an abrasion-resistant, insulative hard coating made of carbon, which is formed at a thickness of about 5 to 10 μm on the pressurized tip portion of the capillary tip (5) and its outer periphery. Such a hard coating (52) can be produced by ionizing vapor deposition of solid carbon using discharge using argon gas, or by depositing r# compound gas such as methane, butane, benzene, etc. using a dual ion beam device, a DC sputtering device, or a high-frequency device. sputtering equipment,
It is preferable to form a diamond structure by ionizing and vapor depositing using a pulse plasma device or an ionization vapor deposition device. Such hard coatings generally have a hardness of H-ma 2000 to 230 compared to conventional ceramics.
(approximately 0), a higher hardness of HV2300 or higher can be obtained.
また、その抵抗率も硬質被膜（５２）とトーチ電（４（
７）との間に放電が生じるのを阻止する、即ち金属細線
（６）とトーチ電極（７）との間の放電を阻害しないよ
うにするのに十分な値か得られる。In addition, the resistivity of the hard coating (52) and the torch electrode (4 (
7), that is, a value sufficient to prevent discharge between the thin metal wire (6) and the torch electrode (7) from being obstructed.
（５３）はルーピング、ウェッジボンディングの際に金
属細線（６）か接触する頻度の高い部分で、炭素からな
る硬質被膜（５２）は粗さが下地より１０〜２０％大き
くなるため、前記部分（５３）を避けて硬質波＠（５２
）を形成し、金叫細機（６月こ対するホ擦による損傷を
防止している。(53) is a part that frequently comes into contact with the thin metal wire (6) during looping and wedge bonding, and since the hard coating (52) made of carbon is 10 to 20% rougher than the base, the part ( Avoid hard waves @ (52)
) to prevent damage caused by scratching against the gold plate.
この発明の池の実施例か第２図に示されている。第１図
の実施例ではキャピラリチップ（５）の先端に特別な前
処理を施すことなく硬質被膜（５２）を形成したが、第
２図のものはキャピラリチップ（団の表面のうち金属細
線（６）が接触する頻度の高い部分（５３）を残して摩
耗しやすい部分を予めエミリー紙等で研磨しておき、こ
の研磨により除去された部分に硬質被膜（５２）を形成
し、キャピラリチップ（５）の先端の形状、大きさをも
との形状、大きさにしている。An embodiment of the pond of the invention is shown in FIG. In the example shown in Fig. 1, a hard coating (52) was formed on the tip of the capillary tip (5) without any special pretreatment, but in the example shown in Fig. 6), leaving the parts (53) that are often in contact with the capillary tip (53), and polishing the easily worn parts with Emily paper etc., forming a hard coating (52) on the parts removed by this polishing. 5) The shape and size of the tip are changed to the original shape and size.
この発明の他の実施例が第３図に示されでいる。第３図
の実施例か第２図のものと異なるのは研磨を平面状（第
２図のものでは段状になっている）にして作業性を改善
した点たけである。Another embodiment of the invention is shown in FIG. The difference between the embodiment shown in FIG. 3 and the embodiment shown in FIG. 2 is that the polishing is done in a planar manner (in the embodiment shown in FIG. 2, it is stepped) to improve workability.
以上のように硬質被膜（５２）を形成したキャピラリチ
ップ（５）の寿命は試験の結果従来のものより５０％以
上向上することが確認された。なお、従来金属細線とし
て一般に金を使用していたが最近これを低価格の高強度
金属で代替するごとが提案されており、その場合紹音波
併用熱圧着法にあっては十分な接合強度を得るためには
超音波出力を大きくしなければならず、キャピラリチッ
プの摩耗が著しくなるが、この発明のよって耐摩耗性の
硬質被膜を形成しておけばキャピラリチップの摩耗か抑
制されるので、金属細線として高強度金属を使用するワ
イヤボンディングを実現させることができ、工Ｏなど半
導体の生産において多大な効果がある。なお、硬質被膜
（５２）は絶縁性を有し、放電電極（′７）とキャピラ
リチップ（５）との開に放電が生じるのを防止している
ため、硬質被膜（５２）以外の本体部分は安価で加工性
の良いステンレス、粉末高速度鋼の如き硬質金属で形成
することもできる。As a result of the test, it was confirmed that the life of the capillary chip (5) on which the hard coating (52) was formed as described above was improved by more than 50% compared to the conventional capillary chip. Although gold has traditionally been used as thin metal wires, it has recently been proposed to replace it with low-cost, high-strength metals. In order to obtain this, the ultrasonic output must be increased, which causes significant wear on the capillary tip, but by forming a wear-resistant hard coating according to the present invention, the wear on the capillary tip can be suppressed. It is possible to realize wire bonding using high-strength metal as the thin metal wire, which has great effects in the production of semiconductors such as semiconductors. In addition, since the hard coating (52) has insulating properties and prevents discharge from occurring between the discharge electrode ('7) and the capillary tip (5), the main body parts other than the hard coating (52) It can also be made of hard metals such as stainless steel and powdered high-speed steel, which are inexpensive and have good workability.
この発明は以上説明したとおり、キャピラリチップの先
端加圧部分に耐摩耗性の硬質被膜を形成したので、キャ
ピラリチップの摩耗が少なくなり寿命か長くなる効果が
ある。As explained above, in this invention, a wear-resistant hard coating is formed on the pressurized portion of the tip of the capillary tip, which has the effect of reducing wear of the capillary tip and extending its life.
第１図はこの発明の一実施例の断面図１第２図および第
３図はそれぞれこの発明の他の実施例の断面図、第４図
はキャピラリチップを使用するワイヤボンディングの工
程を示す図である０図において、（５）はキャピラリチ
ップ、（５１）は開孔、（５２）は硬質被膜、（５３）
は金属細線が接触する頻度の旨い部分、（６）は金属細
線、（′ｒ）は放？ＩＥ電極である。
なお、図中同一符号は同一または相当部を示すＯ
代理人 弁理士 大 岩 増 雄第１図
第４図
手続補正書（自発）FIG. 1 is a cross-sectional view of one embodiment of the present invention. FIGS. 2 and 3 are cross-sectional views of other embodiments of the present invention, and FIG. 4 is a diagram showing the wire bonding process using a capillary chip. In Figure 0, (5) is a capillary chip, (51) is an opening, (52) is a hard coating, and (53) is a capillary tip.
is the part where the thin metal wire comes into contact frequently, (6) is the thin metal wire, and ('r) is the radiation? It is an IE electrode. In addition, the same reference numerals in the figures indicate the same or equivalent parts O Agent Patent Attorney Masuo Oiwa Figure 1 Figure 4 Procedural Amendment (Voluntary)
Claims (6)
から突出した部分に放電電極との間に放電を生じさせて
前記金属細線の先端部を溶融させたものを接合すべき部
分に圧着させるワイヤボンディング用キャピラリチップ
において、先端加圧部分に耐摩耗性、絶縁性を有する硬
質被膜を形成したことを特徴とするワイヤボンディング
用キャピラリチップ。(1) A thin metal wire should have an opening through which it passes, and the tip of the thin metal wire should be bonded by generating a discharge between the portion of the thin metal wire that protrudes from the hole and a discharge electrode to melt the tip of the thin metal wire. 1. A capillary chip for wire bonding which is crimped to a portion of the wire bonding capillary chip, characterized in that a hard coating having wear resistance and insulation properties is formed on the tip pressurizing portion.
載のワイヤボンディング用キャピラリチップ。(2) A capillary chip for wire bonding according to claim 1, wherein the hard coating is made of carbon.
、ダイヤモンド構造を有するものとして形成した特許請
求の範囲第２項記載のワイヤボンディング用キャピラリ
チップ。(3) The capillary chip for wire bonding according to claim 2, wherein the hard coating is formed to have a diamond structure by ionizing and vapor depositing carbon.
た特許請求の範囲第１項記載のワイヤボンディング用キ
ャピラリチップ。(4) The capillary chip for wire bonding according to claim 1, wherein the hard coating is formed avoiding the contact portion with the thin metal wire.
し、この研磨により除去された部分に前記硬質被膜を形
成した特許請求の範囲第１項記載のワイヤボンディング
用キャピラリチップ。(5) The capillary chip for wire bonding according to claim 1, wherein the portion of the tip pressurizing portion where the hard coating is to be formed is polished, and the hard coating is formed on the portion removed by this polishing.
した特許請求の範囲第１項記載のワイヤボンディング用
キャピラリチップ。(6) The capillary chip for wire bonding according to claim 1, wherein the main body portion other than the hard coating is made of hard metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59247654A JPS61125144A (en) | 1984-11-22 | 1984-11-22 | Capillary chip for wire bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59247654A JPS61125144A (en) | 1984-11-22 | 1984-11-22 | Capillary chip for wire bonding |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61125144A true JPS61125144A (en) | 1986-06-12 |
| JPH0527980B2 JPH0527980B2 (en) | 1993-04-22 |
Family
ID=17166693
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59247654A Granted JPS61125144A (en) | 1984-11-22 | 1984-11-22 | Capillary chip for wire bonding |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61125144A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62158335A (en) * | 1985-12-28 | 1987-07-14 | Kyocera Corp | Capillary for wire bonding |
-
1984
- 1984-11-22 JP JP59247654A patent/JPS61125144A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62158335A (en) * | 1985-12-28 | 1987-07-14 | Kyocera Corp | Capillary for wire bonding |
| JPH0447458B2 (en) * | 1985-12-28 | 1992-08-04 | Kyocera Corp |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0527980B2 (en) | 1993-04-22 |
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