JPS6112037B2 - - Google Patents
Info
- Publication number
- JPS6112037B2 JPS6112037B2 JP59119716A JP11971684A JPS6112037B2 JP S6112037 B2 JPS6112037 B2 JP S6112037B2 JP 59119716 A JP59119716 A JP 59119716A JP 11971684 A JP11971684 A JP 11971684A JP S6112037 B2 JPS6112037 B2 JP S6112037B2
- Authority
- JP
- Japan
- Prior art keywords
- copper plating
- copper
- carbon atoms
- brightener
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010949 copper Substances 0.000 claims description 49
- 229910052802 copper Inorganic materials 0.000 claims description 49
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 46
- 238000007747 plating Methods 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 26
- -1 nitrate ions Anion Chemical class 0.000 claims description 24
- 150000001875 compounds Chemical class 0.000 claims description 22
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 14
- 125000004432 carbon atom Chemical group C* 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 229920002873 Polyethylenimine Polymers 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- 230000002378 acidificating effect Effects 0.000 claims description 11
- 125000003118 aryl group Chemical group 0.000 claims description 11
- 238000000137 annealing Methods 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 229920000570 polyether Polymers 0.000 claims description 9
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 8
- 125000000217 alkyl group Chemical group 0.000 claims description 8
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 8
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 7
- 238000004070 electrodeposition Methods 0.000 claims description 6
- 229910052736 halogen Inorganic materials 0.000 claims description 6
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 6
- 125000003277 amino group Chemical group 0.000 claims description 5
- 239000007864 aqueous solution Substances 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 5
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 4
- 125000003710 aryl alkyl group Chemical group 0.000 claims description 4
- 125000002887 hydroxy group Chemical class [H]O* 0.000 claims description 4
- 125000001624 naphthyl group Chemical group 0.000 claims description 4
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 4
- 150000008051 alkyl sulfates Chemical group 0.000 claims description 3
- 239000007795 chemical reaction product Substances 0.000 claims description 3
- 239000000460 chlorine Substances 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical group O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 2
- 229910002651 NO3 Inorganic materials 0.000 claims description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Chemical group BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052794 bromium Inorganic materials 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical group II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052744 lithium Inorganic materials 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Chemical group 0.000 claims description 2
- 125000004437 phosphorous atom Chemical group 0.000 claims description 2
- 229910052698 phosphorus Chemical group 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 229910052717 sulfur Inorganic materials 0.000 claims description 2
- 239000011593 sulfur Chemical group 0.000 claims description 2
- 239000000243 solution Substances 0.000 claims 4
- 125000001309 chloro group Chemical group Cl* 0.000 claims 1
- 239000002659 electrodeposit Substances 0.000 claims 1
- 125000000623 heterocyclic group Chemical group 0.000 claims 1
- 125000001174 sulfone group Chemical group 0.000 claims 1
- 239000000203 mixture Substances 0.000 description 7
- 239000003795 chemical substances by application Substances 0.000 description 5
- 150000002894 organic compounds Chemical class 0.000 description 5
- XXACTDWGHQXLGW-UHFFFAOYSA-M Janus Green B chloride Chemical compound [Cl-].C12=CC(N(CC)CC)=CC=C2N=C2C=CC(\N=N\C=3C=CC(=CC=3)N(C)C)=CC2=[N+]1C1=CC=CC=C1 XXACTDWGHQXLGW-UHFFFAOYSA-M 0.000 description 4
- KCXMKQUNVWSEMD-UHFFFAOYSA-N benzyl chloride Chemical compound ClCC1=CC=CC=C1 KCXMKQUNVWSEMD-UHFFFAOYSA-N 0.000 description 4
- 229940073608 benzyl chloride Drugs 0.000 description 4
- 238000005282 brightening Methods 0.000 description 4
- 229910000365 copper sulfate Inorganic materials 0.000 description 4
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 4
- 229920001451 polypropylene glycol Polymers 0.000 description 4
- 150000003839 salts Chemical group 0.000 description 4
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical group C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 3
- 229940100198 alkylating agent Drugs 0.000 description 3
- 239000002168 alkylating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 150000001879 copper Chemical class 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- SOUHUMACVWVDME-UHFFFAOYSA-N safranin O Chemical compound [Cl-].C12=CC(N)=CC=C2N=C2C=CC(N)=CC2=[N+]1C1=CC=CC=C1 SOUHUMACVWVDME-UHFFFAOYSA-N 0.000 description 3
- 239000010981 turquoise Substances 0.000 description 3
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 2
- LMPMFQXUJXPWSL-UHFFFAOYSA-N 3-(3-sulfopropyldisulfanyl)propane-1-sulfonic acid Chemical compound OS(=O)(=O)CCCSSCCCS(O)(=O)=O LMPMFQXUJXPWSL-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- ZRALSGWEFCBTJO-UHFFFAOYSA-N Guanidine Chemical compound NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical group CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 230000029936 alkylation Effects 0.000 description 2
- 238000005804 alkylation reaction Methods 0.000 description 2
- 125000002947 alkylene group Chemical group 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 125000000467 secondary amino group Chemical class [H]N([*:1])[*:2] 0.000 description 2
- 150000003568 thioethers Chemical class 0.000 description 2
- FSSPGSAQUIYDCN-UHFFFAOYSA-N 1,3-Propane sultone Chemical compound O=S1(=O)CCCO1 FSSPGSAQUIYDCN-UHFFFAOYSA-N 0.000 description 1
- RILZRCJGXSFXNE-UHFFFAOYSA-N 2-[4-(trifluoromethoxy)phenyl]ethanol Chemical compound OCCC1=CC=C(OC(F)(F)F)C=C1 RILZRCJGXSFXNE-UHFFFAOYSA-N 0.000 description 1
- RGLYKWWBQGJZGM-ZCXUNETKSA-N 4-[(z)-4-(4-hydroxyphenyl)hex-3-en-3-yl]phenol Chemical compound C=1C=C(O)C=CC=1C(/CC)=C(/CC)C1=CC=C(O)C=C1 RGLYKWWBQGJZGM-ZCXUNETKSA-N 0.000 description 1
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XZMCDFZZKTWFGF-UHFFFAOYSA-N Cyanamide Chemical compound NC#N XZMCDFZZKTWFGF-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- VYZAHLCBVHPDDF-UHFFFAOYSA-N Dinitrochlorobenzene Chemical compound [O-][N+](=O)C1=CC=C(Cl)C([N+]([O-])=O)=C1 VYZAHLCBVHPDDF-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 241000720913 Fuchsia Species 0.000 description 1
- CHJJGSNFBQVOTG-UHFFFAOYSA-N N-methyl-guanidine Natural products CNC(N)=N CHJJGSNFBQVOTG-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910018830 PO3H Inorganic materials 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- QUWYLPDFNGDSTR-UHFFFAOYSA-N [N].C1=CC=CC2=CNC=C21 Chemical group [N].C1=CC=CC2=CNC=C21 QUWYLPDFNGDSTR-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 150000001266 acyl halides Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 150000007824 aliphatic compounds Chemical class 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 150000001350 alkyl halides Chemical class 0.000 description 1
- BHELZAPQIKSEDF-UHFFFAOYSA-N allyl bromide Chemical compound BrCC=C BHELZAPQIKSEDF-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- JFEVWPNAOCPRHQ-UHFFFAOYSA-N chembl1316021 Chemical compound OC1=CC=CC=C1N=NC1=CC=CC=C1O JFEVWPNAOCPRHQ-UHFFFAOYSA-N 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- JZCCFEFSEZPSOG-UHFFFAOYSA-L copper(II) sulfate pentahydrate Chemical compound O.O.O.O.O.[Cu+2].[O-]S([O-])(=O)=O JZCCFEFSEZPSOG-UHFFFAOYSA-L 0.000 description 1
- ZQLBQWDYEGOYSW-UHFFFAOYSA-L copper;disulfamate Chemical compound [Cu+2].NS([O-])(=O)=O.NS([O-])(=O)=O ZQLBQWDYEGOYSW-UHFFFAOYSA-L 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- VAYGXNSJCAHWJZ-UHFFFAOYSA-N dimethyl sulfate Chemical compound COS(=O)(=O)OC VAYGXNSJCAHWJZ-UHFFFAOYSA-N 0.000 description 1
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 125000001072 heteroaryl group Chemical group 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920000847 nonoxynol Polymers 0.000 description 1
- 125000005515 organic divalent group Chemical group 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 150000008116 organic polysulfides Chemical class 0.000 description 1
- 150000002898 organic sulfur compounds Chemical class 0.000 description 1
- 150000002924 oxiranes Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N phosphonic acid group Chemical group P(O)(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000005077 polysulfide Substances 0.000 description 1
- 229920001021 polysulfide Polymers 0.000 description 1
- 150000008117 polysulfides Polymers 0.000 description 1
- 239000012716 precipitator Substances 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 238000005956 quaternization reaction Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 150000003464 sulfur compounds Chemical group 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 150000003558 thiocarbamic acid derivatives Chemical class 0.000 description 1
- NONOKGVFTBWRLD-UHFFFAOYSA-N thioisocyanate group Chemical group S(N=C=O)N=C=O NONOKGVFTBWRLD-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明の方法は、広義には導電性素地上に銅皮
膜を電着せしめる方法に関し、さらに詳しくは本
発明の方法は印刷用の輪転グラビア円筒の電気め
つき方法に関し、引き続く機械彫刻に著しく好適
なエンジニアリング用銅めつき膜を提供する方法
に関する。Detailed Description of the Invention [Industrial Application Field] The method of the present invention relates in a broad sense to a method of electrodepositing a copper film on a conductive substrate, and more specifically, the method of the present invention relates to a method of electrodepositing a copper film on a conductive substrate. This invention relates to a method for electroplating cylinders, providing an engineering copper plating film that is highly suitable for subsequent mechanical engraving.
従来、引き続いての彫刻を可能ならしめるのに
十分な程度の膜厚で輪転グラビア円筒の表面に銅
めつき膜を析出させるために、各種の銅めつき浴
組成物及び方法が採用されてきた。明るい装飾用
銅めつきを析出させるのに用いる銅めつき浴は、
平滑で延性のある銅めつきを生成するが、析出し
たあとの銅皮膜が自己アニーリング性なので、め
つき工程のあとで該皮膜が著しく軟化して、ダイ
ヤモンド尖筆を用いるような、機械彫刻に対して
は不適当な皮膜になるという欠点がある。別法と
して、自己アニーリング性がない銅めつき浴が使
用されているが、かかる銅めつきは、曇つて、つ
やのない外観を有し、平滑性に乏しいので機械的
に研磨して、次ぎの彫刻に適するように表面仕上
げをする必要がある。
In the past, various copper plating bath compositions and methods have been employed to deposit a copper plating film on the surface of a rotogravure cylinder at a thickness sufficient to permit subsequent engraving. . The copper plating bath used to deposit bright decorative copper plating is
It produces a smooth and ductile copper plating, but since the deposited copper film is self-annealing, the film softens significantly after the plating process, making it difficult to use for mechanical engraving, such as with a diamond stylus. However, it has the disadvantage of forming an unsuitable film. Alternatively, non-self-annealing copper plating baths have been used, but such copper plating has a dull, matte appearance and poor smoothness and must be mechanically polished for further processing. The surface needs to be finished to make it suitable for engraving.
この発明の利益と有利性は、ある種の組成をも
つた酸性銅めつき水性浴を使用すると、ある操業
条件のもとでは非常に平滑で延性があり、光輝が
あつて実質的に均一な硬さをもつエンジニアリン
グ用銅めつき膜を生成させることができ、この銅
めつき膜は自己アニーリング性がないのでめつき
工程に引き続いて長期間、その硬度を保つために
機械彫刻その他によつて該銅めつきを彫刻するこ
とができるという事実の発見に基づいている。
The benefits and advantages of this invention are that the use of an aqueous acidic copper plating bath of certain compositions provides a very smooth, ductile, bright and substantially uniform coating under certain operating conditions. It is possible to produce a hard engineering copper plating film, which does not have self-annealing properties and can be processed by mechanical engraving or other means to maintain its hardness for a long period of time following the plating process. It is based on the discovery of the fact that copper plating can be engraved.
この銅めつき浴は、素地上に銅を析出せしめる
のに十分な量の銅成分と、次(ア)、(イ)及び(ウ)から成
る浴可溶性・相溶性有機光沢剤の一定の組み合わ
せ成分とを含有する酸性水溶液から成つている。 This copper plating bath consists of a copper component in an amount sufficient to deposit copper on the substrate, and a certain combination of bath-soluble and compatible organic brighteners consisting of the following (a), (b), and (c). It consists of an acidic aqueous solution containing the following ingredients.
(ア) 少なくとも1種の有機ポリエーテル化合物、
(イ) 少なくとも1種の有機硫化物化合物、並びに
(ウ) 一般式(A)
〔式中、R1及びR2は水素、メチル及びエチル基
から成る群から選択された基、Xは塩基、臭
素、ヨウ素、フツ素、硫酸、重硫酸及び硝酸イ
オンから成る群から選択されたアニオン、Yは
H、−NH2、−N(CH3)2及び−N=N−Z、Z
はフエニル、ナフチルから成る群から選択され
た芳香族基並びにアミノ基、アルキル置換アミ
ノ基、ヒドロキシ及びアルコキシ置換基によつ
て置換されているフエニル及びナフチル基であ
る〕
に概当する少なくとも1種の化合物:
一般式(B)
Pc−(X)o (B)
〔式中、Pcはフタロシアニン;
Xは−SO2NR2、−SO3M、
−CH2SC(NR2)2+Y−;
RはH、炭素数1〜6のアルキル、炭素数6
のアリール、アリール位に炭素数6及びアルキ
ル位に炭素数1〜6を有するアラルキル、炭素
数2〜5で少なくとも1個の窒素、酸素、硫黄
又はりん原子を含む異節環並びに1〜5のアミ
ノ基、水酸基、スルホン基又はホスホン基を含
む上記のアルキル、アリール、アラルキル及び
異節基であり;nは1〜6;
Yは水素はアルキル位に1〜4の炭素原子を
含むアルキル硫酸であり;
MはH、Li、Na、K又はMgである〕
に概当する少なくとも1種のフタロシアニン誘
導体;及び四級窒素原子を有する少なくとも1
種のアルキル化ポリエチレンイミン反応生成物
(C)。(a) at least one organic polyether compound, (b) at least one organic sulfide compound, and (c) general formula (A) [wherein R 1 and R 2 are groups selected from the group consisting of hydrogen, methyl and ethyl groups, and X is selected from the group consisting of base, bromine, iodine, fluorine, sulfuric acid, bisulfuric acid and nitrate ions Anion, Y is H, -NH2 , -N( CH3 ) 2 and -N=N-Z, Z
is an aromatic group selected from the group consisting of phenyl, naphthyl, and phenyl and naphthyl groups substituted with amino groups, alkyl-substituted amino groups, hydroxy and alkoxy substituents] Compound: General formula (B) Pc-(X) o (B) [In the formula, Pc is phthalocyanine; X is -SO2NR2 , -SO3M , -CH2SC ( NR2 ) 2 +Y-; R is H, alkyl having 1 to 6 carbon atoms, 6 carbon atoms
Aryl, aralkyl having 6 carbon atoms in the aryl position and 1 to 6 carbon atoms in the alkyl position, heteroartic rings having 2 to 5 carbon atoms and containing at least one nitrogen, oxygen, sulfur or phosphorus atom, and 1 to 5 carbon atoms alkyl, aryl, aralkyl and heteroaromatic groups as described above containing amino, hydroxyl, sulfonic or phosphonic groups; n is 1 to 6; Y is hydrogen and alkyl sulfate containing 1 to 4 carbon atoms in the alkyl position; M is H, Li, Na, K or Mg; and at least one phthalocyanine derivative having a quaternary nitrogen atom;
Seed Alkylated Polyethyleneimine Reaction Products
(C).
この水性・酸性めつき浴中の有機光沢剤は、ポ
リエーテル化合物濃度が約0.001〜約5g/の範
囲内、有機硫化物濃度が約0.0005〜約1g/、
及び3種又はそれ以上の混合物としてのグループ
(ウ)に属する光沢剤濃度が少なくとも約25mg/な
いし約0.5g/以下になるような量で含まれてい
る。 The organic brightener in this aqueous/acidic plating bath has a polyether compound concentration in the range of about 0.001 to about 5 g/, an organic sulfide concentration in the range of about 0.0005 to about 1 g/,
and groups as mixtures of three or more.
It is contained in an amount such that the concentration of the brightener belonging to (c) is at least about 25 mg/ to about 0.5 g/or less.
本発明の方法の提案では、この水性・酸性銅め
つき浴は約60゜〜約100゜F(16〜38℃)で用
い、カソード電流密度は少なくとも約60ASF
(6.4A/Dm2)であつて約300ASF(32A/Dm2)以
下又はそれ以上であつて少なくとも約0.001イン
チ(0.025cm)膜厚のエンジニアリング用銅皮膜
が析出するようにする。整合アノード又は複数の
アノードを用いて約60ASF(6.4A/Dm2)以下の
低電流密度領域が発生しないようにし、これによ
つてさらに素地上に実質的に均一な膜厚の銅が析
出するようにする。 In the proposed method of the present invention, the aqueous acidic copper plating bath is used at a temperature of about 60° to about 100°F (16-38°C) and a cathodic current density of at least about 60 ASF.
(6.4 A/Dm 2 ) and less than or greater than about 300 ASF (32 A/Dm 2 ) and at least about 0.001 inch (0.025 cm) thick. A matched anode or multiple anodes are used to avoid regions of low current density below about 60 ASF (6.4 A/Dm 2 ), thereby further depositing a substantially uniform thickness of copper on the substrate. Do it like this.
本発明の方法を実施するには、典型的として約
180〜約250g/の硫酸銅、及び約30〜約80g/
の硫酸を含む硫酸塩型の酸性めつき水性浴を準備
する。変形として典型例として約200〜約600g/
のフツ化ホウ素酸銅及び約60g/以下のフツ
化ホウ素酸を含むフツ化ホウ素酸塩型の浴を準備
してもよい。また硫酸銅に対して約当量割合の硝
酸銅又は銅スルフアメート塩を用いて、当量のり
ん酸、硝酸、スルフアミン酸又は硫酸で浴を酸性
化してもよい。本発明の好ましい実施態様におい
ては硫酸塩型銅浴を用いた。
To carry out the method of the invention, typically about
180 to about 250 g/copper sulfate, and about 30 to about 80 g/
Prepare a sulfate type acid plating aqueous bath containing sulfuric acid. A typical example of a modified version is about 200 to about 600 g/
A fluoroborate type bath may be provided containing copper fluoroborate and up to about 60 g/fluoroboric acid. The bath may also be acidified with an equivalent amount of phosphoric acid, nitric acid, sulfamic acid or sulfuric acid using copper nitrate or copper sulfamate salt in about an equivalent proportion to copper sulfate. In a preferred embodiment of the invention, a sulfate type copper bath was used.
この水性めつき浴には、さらに塩素及び/又は
臭素イオンのようなハロゲンイオンを約0.2g/
以下の量で含むこともできる。0.2g/以上のハ
ロゲンイオン濃度では、ある場合には銅めつき膜
の延性が低下するので好ましくない。 This aqueous plating bath also contains approximately 0.2 g/h of halogen ions such as chlorine and/or bromide ions.
It can also be included in the following amounts: A halogen ion concentration of 0.2 g/ or more is not preferable because the ductility of the copper-plated film decreases in some cases.
所望する好ましい膜物性を有すると同時に、自
己アニーリング性がないというユニークな特性
は、前記したような型の有機光沢剤の特殊な組み
合わせを用いることによつて達成される。好まし
い有機ポリエーテル化合物は少なくとも4個のエ
ーテル性酸素と、平均分子量が約180〜1000000の
浴可溶性で相溶性のポリエーテルである。ポリプ
ロピレングリコール及びポリエチレングリコール
並びに平均分子量約600〜約6000のこれらの混合
物、平均分子量約300〜2500の芳香族アルコール
アルコキシレート及び平均分子量約1000〜約
50000のアミンのアルコキシレートを用いると特
に満足な結果が得られる。満足できるポリエーテ
ル光沢化合物を例示すると、平均分子量約400〜
約1000000のポリエチレングリコール;エチレン
オキシド基5〜45モルを含むナフト−ルエトキシ
レート;プロピレンオキシド基5〜15モルを含む
ナフトールプロポキシレート;エチレンオキシド
基5〜30モルを含むノニルフエノールエトキシレ
ート;平均分子量約350〜約1000のプロピレング
リコール;平均分子量約350〜250000のポリオキ
シエチレン・ポリオキシプロピレングリコールの
ブロツクポリマー:エチレンオキシド基5〜100
モルを含むフエノールエトキシレート;プロピレ
ンオキシド基5〜15モルを含むフエノールプロポ
キシレート及び平均分子量約1600〜約30000のエ
チレンジアミンブロツクポリマーが挙げられる。
その他のポリエーテル化合物としては、米国特許
第4272335号公報に開示のようなものがあり、こ
れらも有用である。 The unique property of not self-annealing while having the desired favorable film physical properties is achieved by using a special combination of organic brighteners of the type described above. Preferred organic polyether compounds are bath-soluble, compatible polyethers with at least four ethereal oxygens and an average molecular weight of about 180 to 1,000,000. Polypropylene glycol and polyethylene glycol and mixtures thereof with an average molecular weight of about 600 to about 6,000, aromatic alcohol alkoxylates with an average molecular weight of about 300 to 2,500 and average molecular weights of about 1,000 to about
Particularly satisfactory results are obtained using alkoxylates of 50,000 amines. Examples of satisfactory polyether gloss compounds include average molecular weights of approximately 400 to
about 1,000,000 polyethylene glycols; naphthol ethoxylates containing 5 to 45 moles of ethylene oxide groups; naphthol propoxylates containing 5 to 15 moles of propylene oxide groups; nonylphenol ethoxylates containing 5 to 30 moles of ethylene oxide groups; average molecular weight about 350 ~1000 propylene glycol; polyoxyethylene/polyoxypropylene glycol block polymer with an average molecular weight of about 350 to 250,000: 5 to 100 ethylene oxide groups
phenol propoxylates containing from 5 to 15 moles of propylene oxide groups and ethylenediamine block polymers having an average molecular weight of about 1,600 to about 30,000.
Other polyether compounds such as those disclosed in US Pat. No. 4,272,335 are also useful.
このポリエーテル光沢剤の使用量は約0.001〜
約5g/の範囲であつて、分子量が高くなる
程、低濃度で用するのが一般的である。 The usage amount of this polyether brightener is approximately 0.001 ~
It is generally in the range of about 5 g/, and the higher the molecular weight, the lower the concentration used.
本発明の浴に用いて有効な有機硫化物光沢剤(イ)
には、米国特許第3267010号公報に記載のような
種々の有機硫化物スルホン酸化合物、特に同明細
書第1表に挙げられているもの;米国特許第
4181582号公報の第表に挙げられているような
有機硫黄化合物;及び米国特許第3328273号公報
の第1表の有機ポリ硫化物が包含される。 Organic sulfide brightener (a) effective for use in the bath of the present invention
Various organosulfide sulfonic acid compounds such as those described in U.S. Pat. No. 3,267,010, particularly those listed in Table 1 of that specification;
Included are organic sulfur compounds as listed in Table 1 of U.S. Pat. No. 4,181,582; and organic polysulfides listed in Table 1 of U.S. Pat. No. 3,328,273.
スルホン基又はホスホン基を有する有機硫化物
はまた、その分子中、特にその芳香族及び異節環
硫化物−スルホン酸又はホスホン酸上にメチル、
クロロ、ブロモ、メトキシ、エトキシ、カルボキ
シ又はヒドロキシのような各種の置換基が含まれ
ていてもよい。これらの化合物は遊離酸、アルカ
リ金属塩、有機アミン塩又はその他の形態で使用
される。 Organic sulfides having sulfonic or phosphonic groups also contain methyl,
Various substituents such as chloro, bromo, methoxy, ethoxy, carboxy or hydroxy may be included. These compounds are used in the form of free acids, alkali metal salts, organic amine salts or other forms.
好適な他の有機2価硫黄化合物には、HO3−P
−(CH2)3−S−S−(CH2)3−PO3H、並びにメル
カプタン、チオカルバメート、チオールカルバメ
ート、チオゼンセート及び少なくともスルホン基
又はホスホン基を1個有するチオカルボネートが
包含される。 Other suitable organic divalent sulfur compounds include HO 3 -P
Included are -( CH2 ) 3 -S-S-( CH2 ) 3 - PO3H, as well as mercaptans, thiocarbamates, thiol carbamates, thiozensates and thiocarbonates having at least one sulfone or phosphonic group.
米国特許第3328273号公報に記載されていて、
特に好ましい有機2価硫黄化合物群は、一般式
XR1−(S)oR2SO3H又はXR1−(S)oR2PO3H〔こ
こでR1及びR2は炭素数1〜6の同種又は異種の
アルキレン基、Xは水素、SO3H又はPO3Hであ
り、nは約2〜5の数である〕で示される有機ポ
リ硫化物化合物である。これらの有機2価硫黄化
合物は、少なくとも2個の2価硫黄原子が隣接し
ていて、分子中に1個又は2個の末端スルホン酸
基又はホスホン酸基を有する脂族族ポリ硫化物で
ある。分子のアルキレン部分は、メチル、エチ
ル、クロロ、ブロモ、エトキシ、ヒドロキシ及び
その他の基で置換されていてもよい。これらの化
合物は遊離酸又はアルカリ金属塩又はアミン塩と
して添加できる。 It is described in U.S. Patent No. 3328273,
A particularly preferable organic divalent sulfur compound group has the general formula
XR 1 -(S) o R 2 SO 3 H or XR 1 -(S) o R 2 PO 3 H [Here, R 1 and R 2 are the same or different alkylene groups having 1 to 6 carbon atoms, and X is hydrogen , SO 3 H or PO 3 H, and n is a number from about 2 to 5]. These organic divalent sulfur compounds are aliphatic polysulfides having at least two adjacent divalent sulfur atoms and one or two terminal sulfonic acid groups or phosphonic acid groups in the molecule. . The alkylene portion of the molecule may be substituted with methyl, ethyl, chloro, bromo, ethoxy, hydroxy, and other groups. These compounds can be added as free acids or alkali metal or amine salts.
この有機硫化物光沢剤又はこれらの混合物は浴
中で約0.0005〜約1g/の濃度範囲で含まれて
いる。 The organic sulfide brightener or mixture thereof is present in the bath at a concentration ranging from about 0.0005 to about 1 g/g.
ポリエーテル化合物(ア)及び硫化物(イ)からなる光
沢剤に加えて、このめつき浴はさらに必須の光沢
剤として化合物(A)、(B)、及び(C)から成る少なくと
も三種の光沢剤化合物(ウ)を含有している。一般式
(A)に相当する光沢剤化合物は典型的には米国特許
第2882209号公報、特にその第表に記載のもの
である。かかる光沢剤の代表としては、ジエチル
サフラニンアゾジメチルアニリン(Janus Green
B)、ジエチルサフラニンアゾフエノール
(Janus Black)、サフラニンアゾナフトール
(Janus Blue、Janus Gray)〔Color Index 137、
Society of Dyers & Colourists、by F.M.
Rowe、(1924)〕、ジメチルサフラニンアゾジメチ
ルアニリン、フエノサフラニン、「Fuchsia、
Amethyst Violet」その他である。 In addition to the brighteners consisting of polyether compounds (A) and sulfides (B), this plating bath also contains at least three brighteners consisting of compounds (A), (B), and (C) as essential brighteners. Contains agent compound (c). general formula
Brightener compounds corresponding to (A) are typically those described in US Pat. No. 2,882,209, particularly in the table therein. Representative examples of such brighteners include diethylsafranine azodimethylaniline (Janus Green
B), diethyl safranin azophenol (Janus Black), safranin azonaphthol (Janus Blue, Janus Gray) [Color Index 137,
Society of Dyers & Colourists, by FM
Rowe, (1924)], dimethylsafranine, azodimethylaniline, phenosafranine, “Fuchsia,
Amethyst Violet” and others.
一般式(B)に相当する光沢剤化合物はフタロシア
ニン誘導体から成り、この誘導体は金属を伴わな
いものでもよく、又は分子中のイソインドール窒
素原子の配位によつて結ばれている2価又は3価
の安定な金属を含んでいるものでよく、該金属と
してはコバルト、ニツケル、クロム、鉄又は銅並
びにこれらの混合物から選択されたものであつ
て、なかでも銅が典型的な好ましい金属である。 The brightener compounds corresponding to general formula (B) consist of phthalocyanine derivatives which may be metal-free or which are divalent or trivalent linked by the coordination of the isoindole nitrogen atoms in the molecule. It may contain a value-stable metal selected from cobalt, nickel, chromium, iron or copper, and mixtures thereof, with copper being a typically preferred metal. .
本発明の実施に当つて使用するのに適した、か
かるフタロシアニン誘導体は少なくとも約0.1mg/
の浴溶解度のものであつて、約0.5g/以下、
好ましくは約25〜約50g/で用いる。好適なフ
タロシアニン誘導体は次に構造式に概当する:
〔式中、
Xは前記したもの:
ZはNi、Co、Cr、Fe又はCu;aは0〜1;そ
して
Bは0〜2、但しX置換分の合計が1〜6であ
るとする〕
本発明の実施に際して使用するのに好適な置換
フタロシアニン誘導体には、さらに米国特許第
4272335号公報に開示したものが包含される。特
に好ましいフタロシアニン誘導体はアルシアンブ
ル(Alcian Blue)である。 Such phthalocyanine derivatives suitable for use in the practice of this invention are at least about 0.1 mg/
with a bath solubility of about 0.5 g/or less,
Preferably, about 25 to about 50 g/g is used. Suitable phthalocyanine derivatives are outlined in the following structural formula: [wherein, Substituted phthalocyanine derivatives suitable for use in the practice of the present invention further include U.S. Pat.
Includes what is disclosed in No. 4272335. A particularly preferred phthalocyanine derivative is Alcian Blue.
有機光沢剤化合物(C)はポリエチレンイミン
と有機化合物との反応生成物であつて、該有機化
合物はポリエチレンイミンの窒素をアルキル化し
て四級窒素を生成せしめるようなものである。 The organic brightener compound (C) is a reaction product of polyethyleneimine and an organic compound that alkylates the nitrogen of the polyethyleneimine to produce quaternary nitrogen.
本発明の実施において使用できる前記の化合物
は米国特許第3770598号に開示されている。この
アルキル化剤は飽和又は不飽和のいずれかの脂肪
族及び芳香族化合物である。特に有用であること
が判明した化合物はハロゲン化アラルキル、ハロ
ゲン化アルキル、ハロゲン化アルケニル及びハロ
ゲン化アルキニル、酸ハロゲン化物、ハロゲン化
アシルその他のような活性ハロゲンを含んでいる
有機化合物である。またそのほか、硫酸アルキ
ル、アルキルスルトン、アルデヒド、ケトン、イ
ソシアナート、チオイソシアナート、エポキシ
ド、アシルアミド、酸、酸無水物、尿素、シアナ
ミド、グアニジンその他も使用できる。ある場合
には反応基がアルキル鎖ではなくて、寧ろ芳香族
核に直接結合しているような有機化合物も使用す
ることができる。かかる有機物質の例としては
2・4−ジニトロクロロベンゼンがあり、これは
ポリエチレンイミンの一級又は二級窒素のいずれ
かと反応し、かつ/又は二級窒素を四級化する。
したがつて、ポリエチレンイミンの窒素の“アル
キル化”なる用語には、窒素がアリール又は芳香
族核に直接、結合している場合も、脂肪族基に結
合している場合と同様に包含されることを意味し
ている。特に良好な結果が得られることが判つた
化合物は、塩化ベンジル、臭化アリル、ジメチル
硫酸及びプロパンスルトンである。しかし、これ
らの化合物はポリエチレンイミンの窒素をアルキ
ル化しうる有機化合物のほんの一例にすぎない。
できればこのアルキル化剤は芳香族ハロゲンであ
るのが好ましい。 Such compounds that can be used in the practice of this invention are disclosed in US Pat. No. 3,770,598. The alkylating agents are either saturated or unsaturated aliphatic and aromatic compounds. Compounds that have been found to be particularly useful are organic compounds containing active halogens such as aralkyl halides, alkyl halides, alkenyl and alkynyl halides, acid halides, acyl halides, and the like. In addition, alkyl sulfates, alkyl sultones, aldehydes, ketones, isocyanates, thioisocyanates, epoxides, acylamides, acids, acid anhydrides, urea, cyanamide, guanidine, and others can be used. In some cases organic compounds may also be used in which the reactive group is not attached to the alkyl chain, but rather directly to the aromatic nucleus. An example of such an organic material is 2,4-dinitrochlorobenzene, which reacts with either the primary or secondary nitrogen of the polyethyleneimine and/or quaternizes the secondary nitrogen.
Therefore, the term "alkylation" of the nitrogen of polyethyleneimine includes cases where the nitrogen is bonded directly to an aryl or aromatic nucleus as well as cases where the nitrogen is bonded to an aliphatic group. It means that. Compounds which have been found to give particularly good results are benzyl chloride, allyl bromide, dimethyl sulfate and propane sultone. However, these compounds are only examples of organic compounds that can alkylate the nitrogen of polyethyleneimine.
Preferably, the alkylating agent is an aromatic halogen.
アルキル化剤が一級又は二級アミンと反応する
際には、それぞれ二級アミン及び三級アミンに変
化する。一般及び/又は二級窒素にアルキル化が
生起する場合、有機化合物上のアルキル化基、す
なわちハロゲン、サルフエートその他の脱離が起
こる。しかし、三級窒素の場合には四級塩を形成
する四級化が起こる。 When an alkylating agent reacts with a primary or secondary amine, it changes into a secondary amine and a tertiary amine, respectively. When alkylation occurs on general and/or secondary nitrogens, elimination of alkylated groups on organic compounds, ie halogens, sulfates, etc., occurs. However, in the case of tertiary nitrogens, quaternization occurs to form quaternary salts.
窒素原子の5%程度だけが四級化されても、な
お好結果をうむし、10%ではさらに好ましく、20
%では一層好結果を生むが、ポリエチレンイミン
光沢剤中の窒素原子はできるだけ多く四級化され
ていることが好ましい。 Good results are still obtained even if only about 5% of the nitrogen atoms are quaternized, 10% is even better, and 20% is even better.
% yields better results, but it is preferred that as many nitrogen atoms in the polyethyleneimine brightener be quaternized as possible.
光沢添加剤を形成せしめるために用いるポリエ
チレンイミンは広範な分子量を有しうる。典型的
には、約300〜数百万の範囲の分子量のものであ
る。しかし多くの場合では、分子量は約300〜
1000000の範囲以内であることが好ましい。この
有機光沢剤化合物(C)は約0.5g/以下、好ま
しくは約35〜約100mg/の量で使用するのがよ
い。 The polyethyleneimine used to form the gloss additive can have a wide range of molecular weights. Typically, the molecular weight ranges from about 300 to several million. However, in many cases, the molecular weight is around 300~
Preferably, it is within the range of 1,000,000. The organic brightener compound (C) is preferably used in an amount of about 0.5 g/or less, preferably about 35 to about 100 mg/.
有機光沢剤化合物(A)、(B)及び(C)は少
なくとも三つの組み合せで、少なくとも約25mg/
、好ましくは約30〜90mg/の量で用いる。 Organic brightener compounds (A), (B) and (C) in combination of at least three, at least about 25 mg/
, preferably in an amount of about 30-90 mg/.
この発明の実施に際しては、導電性素地をカソ
ードとして前記組成の浴中に浸漬して所望厚の銅
が析出するまで通電する。めつき操作中、浴温は
約60゜〜約100゜F(16〜38℃)以内に、好まし
くは約70゜〜約90〓(21〜32℃)に制御する。
100〓(38℃)以上になると、多くの場合に延性
の少ない銅皮膜が生成する傾向があるので好まし
くない。この銅の電着は少なくとも約60ASF
(6.4A/Dm2)の電流密度であつて約300ASF(32
A/Dm2)まで、特殊な場合には300ASF(32A/D
m2)以上の電流密度で実施する。好ましいカソー
ド電流密度は約100〜約200ASF(11〜22A/D
m2)である。実質的に均一な膜厚の銅を素地上に
析出せしめるためには、アノードの配列を工夫し
てカソードの実質的全表面に亘つて均一な電流密
度が提供されるようにする。この目的には、輪転
グラビア円筒のめつきにおいて慣用されるよう
に、整合アノード又は複数のアノードを一定距離
をおいて配置して実質的に均一なカソード電流密
度が得られるようにする。 In carrying out the present invention, a conductive substrate is immersed as a cathode in a bath having the above composition, and electricity is applied until a desired thickness of copper is deposited. During the plating operation, the bath temperature is controlled within about 60 DEG to about 100 DEG F. (16 DEG to 38 DEG C.), preferably about 70 DEG to about 90 DEG F. (21 DEG to 32 DEG C.).
If the temperature exceeds 100°C (38°C), a copper film with low ductility tends to form in many cases, which is undesirable. This copper electrodeposition is at least about 60 ASF
(6.4A/Dm 2 ) and approximately 300ASF (32
A/Dm 2 ), in special cases up to 300ASF (32A/D
m2 ) or higher current density. The preferred cathode current density is about 100 to about 200 ASF (11 to 22 A/D
m2 ). In order to deposit a substantially uniform thickness of copper on the substrate, the anode arrangement is designed to provide a uniform current density over substantially the entire surface of the cathode. For this purpose, a matched anode or a plurality of anodes are spaced apart to provide a substantially uniform cathode current density, as is conventional in rotogravure cylinder plating.
本発明の実施によつて析出されたユニークなこ
の銅めつきは、光輝性で平滑で延性があり、実質
的に純銅から成つていて、電気鋳造、オーデオ及
びビデオデイスク製作、輪転グラビア円筒その他
の各種のエンジニアリング的応用に対して著しく
適性がある。この銅めつきは、比較的均一な硬度
を有しているという他の特性があり、通常は100
グラム負荷でダイヤモンド・ピラミツド硬度数
200以上であり、極めて均質で同軸性の結晶構造
をとり、粒子径は約1ミクロン以下であるという
特長がある。この発明によつて作つたエンジニア
リング用銅皮膜は膜厚が少なくとも約0.001イン
チ(0.0025cm)ないし約0.050インチ(0.127cm)
あるいはそれ以上であつて、それと同時に自己ア
ニーリング性がないというユニークな特性を有す
る点において、普通の装飾用銅めつきとは著しく
異なつている。 This unique copper plating deposited by the practice of the present invention is bright, smooth, ductile, and consists of substantially pure copper for use in electroforming, audio and video disc manufacturing, rotogravure cylinders, etc. It is eminently suitable for various engineering applications. Another characteristic of this copper plating is that it has a relatively uniform hardness, typically 100
Diamond pyramid hardness number with gram load
200 or more, has an extremely homogeneous and coaxial crystal structure, and has a particle size of about 1 micron or less. Engineering copper coatings made in accordance with the present invention have a thickness of at least about 0.001 inch (0.0025 cm) to about 0.050 inch (0.127 cm).
It is significantly different from ordinary decorative copper plating in that it has the unique property of not having self-annealing properties.
本発明の方法は、60ASF(6.4A/Dm2)以下の
平均カソード電流密度のようなすべての低電流密
度領域で暗色の稿が発生するので、いわゆる装飾
用銅めつきを生成せしめる目的には適用できな
い。 The method of the present invention is not suitable for the purpose of producing so-called decorative copper plating, since dark color stains occur in all low current density regions, such as average cathode current densities below 60 ASF (6.4 A/Dm 2 ). Not applicable.
実施例
次に実施例により、本発明をさらに詳しく説明
するが、本発明の要旨を逸脱しない限り、これら
の実施例に限定されるものではない。Examples Next, the present invention will be explained in more detail with reference to Examples, but the present invention is not limited to these Examples unless it departs from the gist of the present invention.
実施例 1
硫酸銅・5水和物約195g/、硫酸75g/、
塩素イオン約20〜約100mg/及び約120mg/のポ
リプロピレンオキシド(分子量750)から成る光
沢剤(ア)、約21mg/のビス(3−スルホプロピル
ジ硫酸物・2Na塩)から成る光沢剤(イ)、約15mg/
のJanusグリーンBから成る一般式(A)に相当す
る光沢剤(ウ)、約15mg/のMethic Turquoiseから
成る一般式(B)に相当する光沢剤(ウ)及び塩化ベンジ
ルによつて四級化した約12mg/のポリエチレン
イミンから成る一般式(C)に相当する光沢剤(ウ)から
構成される有機光沢剤の組み合わせを含有してい
る酸性銅めつき水性浴を調製した。Example 1 Copper sulfate pentahydrate approximately 195g/, sulfuric acid 75g/,
A brightening agent (A) consisting of polypropylene oxide (molecular weight 750) containing about 20 to about 100 mg of chlorine ions and about 120 mg/; a brightening agent (I) consisting of about 21 mg/bis(3-sulfopropyl disulfate/2Na salt); ), about 15mg/
A brightener (c) corresponding to the general formula (A) consisting of Janus Green B of about 15 mg/cm, a brightener (c) corresponding to the general formula (B) consisting of about 15 mg/ml of Methic Turquoise, and quaternized with benzyl chloride. An acidic copper plating aqueous bath was prepared containing an organic brightener combination consisting of a brightener (c) corresponding to general formula (C) consisting of about 12 mg/ml of polyethyleneimine.
浴温を約80〓(27℃)に制御して、輪転グラビ
ア円筒を浴中に浸漬して整合銅アノードで取り囲
み、100rpmで回転しながらアノードとカソード
としての作業部品間に通電して約150ASF(16A/
Dm2)の電流密度になるようにした。 The bath temperature was controlled at approximately 80°C (27°C), and the rotogravure cylinder was immersed in the bath, surrounded by a matching copper anode, and rotated at 100 rpm while passing current between the working parts as the anode and cathode to generate approximately 150 ASF. (16A/
Dm 2 ).
生成した銅めつき膜は完全光輝性で良好な平滑
性と延性を有し、かつ100グラム負荷においてダ
イヤモンド硬度数200(DPH)以上の実質的に均
一な硬度のものであることが観察された。この銅
皮膜は実質的に自己アニーリング性のないもので
あることは、銅めつきの析出機、48時間放置した
あとでも目だつた硬度の減少がみられないことに
よつて証明された。 It was observed that the produced copper-plated film was completely bright, had good smoothness and ductility, and had a substantially uniform hardness of more than 200 on the diamond hardness number (DPH) at a load of 100 grams. . The copper coating was virtually non-self-annealing, as evidenced by the fact that there was no noticeable decrease in hardness even after 48 hours in the copper plating precipitator.
実施例 2
約195g/の硫酸銅・5水和物、75g/の硫
酸、約20〜約100mg/の塩素イオン及び約60mg/
のポリエチレンオキシド(分子量3350)から成
る光沢剤(ア)、約30mg/のビス(3−スルホプロ
ピルジ硫化物・2Na塩)から成る光沢剤(イ)、約10
mg/のjanusグリーンBから成る一般式(A)に相当
する光沢剤(ウ)、10mg/の一般式(B)に相当する
Methic Turquoise及び塩化ベンジルで四級化し
たポリエチレンイミンから成る一般式(C)に相当す
る光沢剤(ウ)から構成される有機光沢剤の組み合わ
せを含有する酸性銅めつき水性浴を調製した。Example 2 About 195g/copper sulfate pentahydrate, 75g/sulfuric acid, about 20 to about 100mg/chloride ion, and about 60mg/
brightener (a) consisting of polyethylene oxide (molecular weight 3350), brightener (b) consisting of about 30 mg/bis(3-sulfopropyl disulfide, 2Na salt), about 10
A brightener (c) corresponding to the general formula (A) consisting of Janus Green B of mg/, corresponding to the general formula (B) of 10 mg/
An aqueous acidic copper plating bath was prepared containing a combination of organic brighteners consisting of Methic Turquoise and a brightener (C) corresponding to general formula (C) consisting of polyethyleneimine quaternized with benzyl chloride.
浴温を約75〓(24℃)に制御し、輪転グラビア
円筒を浴に浸漬して整合銅アノードで取り囲み、
300rpmで円筒を回転しながら作業品をカソード
として通電して約100AST(10A/Dm2)の電流密
度になるようにした。 The bath temperature was controlled at approximately 75°C (24°C), and the rotogravure cylinder was immersed in the bath and surrounded by a matched copper anode.
While rotating the cylinder at 300 rpm, current was applied using the work piece as a cathode to obtain a current density of approximately 100 AST (10 A/Dm 2 ).
生成した銅めつき膜は完全光輝性で良好な平滑
性と延性を有し、100グラム負荷において約
200DPH以上の硬度を有していた。この銅めつき
膜は実質的に自己アニーリング性がないものであ
つた。 The produced copper-plated film is completely bright, has good smoothness and ductility, and has a resistance of approx.
It had a hardness of over 200DPH. This copper-plated film had substantially no self-annealing property.
実施例 3
約195g/の硫酸銅・5水和物、75g/の硫
酸、約20〜約100mg/の塩素イオン及び約120g/
のポリプロピレンオキシド(分子量750)から
成る光沢剤(ア)、約30mg/のビス(3−スルホプ
ロピルジ硫化物・2Na塩)から成る光沢剤(イ)、及
び約8mg/のJanusグリーンBから成る一般式
(A)に相当する光沢剤(ウ)、約22mg/のMethic
Turquoiseから成る一般式(B)に相当する光沢剤(ウ)
及び塩化ベンジルによつて四級化したポリエチレ
ンイミンから成る一般式(C)に相当する光沢剤(ウ)か
ら構成される有機光沢剤の組み合わせを含有する
酸性めつき水性浴を調製した。Example 3 About 195g/copper sulfate pentahydrate, 75g/sulfuric acid, about 20 to about 100mg/chloride ion, and about 120g/
A brightening agent (A) consisting of polypropylene oxide (molecular weight 750), a brightening agent (B) consisting of about 30 mg/bis(3-sulfopropyl disulfide, 2Na salt), and about 8 mg/Janus Green B. general formula
Brightener (C) equivalent to (A), approximately 22 mg/Methic
Brightener (C) corresponding to general formula (B) consisting of Turquoise
An acidic plating aqueous bath was prepared containing an organic brightener combination consisting of a brightener (c) corresponding to general formula (C) and a brightener (c) consisting of polyethyleneimine quaternized with benzyl chloride.
浴温を約70〓(21℃)に制御し、輪転グラビア
円筒を浴に浸漬して整合銅アノードで取り囲み、
150rpmで円筒を回転しながら作業品をカソード
として通電して約150ASF(16A/Dm2)の電流密
度になるようにした。 The bath temperature was controlled at approximately 70°C (21°C), and the rotogravure cylinder was immersed in the bath and surrounded by a matched copper anode.
While rotating the cylinder at 150 rpm, current was applied to the work piece as a cathode to achieve a current density of approximately 150 ASF (16 A/Dm 2 ).
生成した銅めつき膜は完全光輝性で良好な平滑
性と延性を有し、100グラム負荷において約200
(DPH)以上の硬化を有していた。この銅めつき
膜は実質的に実自己アニーリング性のないもので
あつた。 The produced copper-plated film has perfect brightness, good smoothness and ductility, and has a resistance of about 200% under a load of 100 grams.
(DPH) or higher. This copper-plated film had virtually no self-annealing properties.
この発明の精神と範囲に反することなしに、広
範に異る実施態様を構成することができることは
明白なので、この発明は前記の特許請求の範囲に
限定した以外は、その特定の実施態様に制約され
るものではない。 Since it is evident that widely different embodiments may be constructed without departing from the spirit and scope of the invention, this invention is not limited to the specific embodiments thereof except as limited by the claims below. It is not something that will be done.
Claims (1)
に均一な硬度を有し、かつ自己アニーリング性の
ないエンジニアリング用銅めつき膜を導電性素地
上に電着せしめる方法であつて、 素地上に銅を析出せしめるのに十分な量の銅成
分と、 (ア) 少なくとも1種の有機ポリエーテル化合物; (イ) 少なくとも1種の有機硫化物;並びに (ウ) 一般式 〔式中、R1及びR2は水素、メチル及びエチル基
から成る群から選択された基、Xは塩素、臭
素、ヨウ素、フツ素、硫酸、重硫酸及び硝酸イ
オンから成る群から選択されたアニオン、Yは
H、−NH2、−N(CH3)2及び−N=N−Z、Z
はフエニル、ナフチルから成る群から選択され
た芳香族基並びにアミノ基、アルキル置換アミ
ノ基、ヒドロキシ及びアルコキシ置換基によつ
て置換されているフエニル及びナフチル基であ
る〕 に概当する少なくとも1種の化合物; 一般式 Pc−(X)o (B) 〔式中、Pcはフタロシアニン; Xは−SO2NR2、−SO3M、−CH2SC(NR2)2
+Y−; RはH、炭素数1〜6のアルキル、炭素数6
のアリール、アリール位に炭素数6及びアルキ
ル位に炭素数1〜6を有するアラルキル、炭素
数2〜5で少なくとも1個の窒素、酸素、硫黄
又はりん原子を含む異節環並びに1〜5のアミ
ノ基、水酸基、スルホン基又はホスホン基を含
む上記のアルキル、アリール、アラルキル及び
異節環であり; nは1〜6; Yは水素又はアルキル位に1〜4の炭素原子
を含むアルキル硫酸であり; MはH、Li、Na、K又はMgである〕 に概当する少なくとも1種のフタロシアニン誘
導体; 及び四級窒素原子を有する少なくとも1種の
アルキル化ポリエチレンイミン反応生成物(C) から成る一定制御量の浴可溶性・相溶性有機光沢
剤の組み合わせを含む酸性水溶液を調製する工程
と、 該溶液中にカソードとしての導電性素地を浸漬
し、少なくとも60ASF(6.4A/Dm2)の平均カソ
ード電流密度において該溶液を通して通電し、少
なくとも0.001インチ(0.0025cm)の膜厚になる
まで該素地上にエンジニアリング用銅めつきを電
着せしめる工程 とから成る方法。 2 該光沢剤(ア)を0.001〜5g/の量で存在せし
めることを特徴とする特許請求の範囲第1項に記
載の方法。 3 該光沢剤(イ)を0.0005〜1g/の量で存在せ
しめることを特徴とする特許請求の範囲第1項に
記載の方法。 4 該光沢剤(ウ)を少なくとも25mg/〜0.5g/
の量で存在せしめることを特徴とする特許請求の
範囲第1項に記載の方法。 5 該光沢剤(ウ)を30〜90mg/の量で存在せしめ
ることを特徴とする特許請求の範囲第1項に記載
の方法。 6 銅めつきの電着の間、該酸性水溶液の温度を
60゜〜100〓(16〜38℃)の範囲以内に制御する
工程をさらに包含せしめることを特徴とする特許
請求の範囲第1項に記載の方法。 7 銅めつきの電着の間、該酸性水溶液の温度を
70゜〜90゜F(21〜32℃)の範囲以内に制御する
工程をさらに包含せしめることを特徴とする特許
請求の範囲第1項に記載の方法。 8 素地上の銅めつき電着工程が平均電流密度
300ASF(32A/Dm2)以下で実施されることを特
徴とする特許請求の範囲第1項に記載の方法。 9 素地上の銅めつき電着工程が平均電流密度
100〜200ASF(11〜22A/Dm2)において実施さ
れることを特徴とする特許請求の範囲第1項に記
載の方法。 10 該酸性水溶液中に、さらに0.2g/以下の
ハロゲンイオンを含有せしめることを特徴とする
特許請求の範囲第1項に記載の方法。 11 該溶液中に浸漬されているアノードの該素
地に対する相対位置を調節して60〜300ASF(6.4
〜32A/Dm2)範囲以内の実質的に均一なカソード
電流密度が提供されるようにする工程をさらに包
含せしめることを特徴とする特許請求の範囲第1
項に記載の方法。 12 該導電性素地が該溶液中に浸漬されている
輪転グラビア円筒から成り、かつ該銅めつきの電
着工程の間、実質的に均一な膜厚の銅めつきを生
成せしめるために該円筒を回転させる工程をさら
に包含せしめることも特徴とする特許請求の範囲
第1項に記載の方法。[Claims] 1. A method for electrodepositing an engineering copper plating film on a conductive substrate that is extremely smooth, ductile, shiny, has substantially uniform hardness, and has no self-annealing properties. a copper component in an amount sufficient to deposit copper on the substrate; (a) at least one organic polyether compound; (b) at least one organic sulfide; and (c) a general formula [wherein R 1 and R 2 are groups selected from the group consisting of hydrogen, methyl and ethyl groups, and X is selected from the group consisting of chlorine, bromine, iodine, fluorine, sulfuric acid, bisulfuric acid and nitrate ions Anion, Y is H, -NH2 , -N( CH3 ) 2 and -N=N-Z, Z
is an aromatic group selected from the group consisting of phenyl, naphthyl, and phenyl and naphthyl groups substituted with amino groups, alkyl-substituted amino groups, hydroxy and alkoxy substituents] Compound; General formula Pc-(X) o (B) [In the formula, Pc is phthalocyanine; X is -SO2NR2 , -SO3M , -CH2SC ( NR2 ) 2
+Y-; R is H, alkyl having 1 to 6 carbon atoms, 6 carbon atoms
Aryl, aralkyl having 6 carbon atoms in the aryl position and 1 to 6 carbon atoms in the alkyl position, heteroartic rings having 2 to 5 carbon atoms and containing at least one nitrogen, oxygen, sulfur or phosphorus atom, and 1 to 5 carbon atoms are the above alkyl, aryl, aralkyl and heterocyclic rings containing an amino group, hydroxyl group, sulfone group or phosphonic group; n is 1 to 6; Y is hydrogen or an alkyl sulfate containing 1 to 4 carbon atoms in the alkyl position; M is H, Li, Na, K or Mg]; and at least one alkylated polyethyleneimine reaction product (C) having a quaternary nitrogen atom. preparing an acidic aqueous solution containing a controlled amount of a combination of bath-soluble and compatible organic brighteners; immersing a conductive substrate as a cathode in the solution; passing an electric current through the solution at a current density to electrodeposit an engineering copper plating onto the substrate to a thickness of at least 0.001 inch (0.0025 cm). 2. The method according to claim 1, characterized in that the brightener (a) is present in an amount of 0.001 to 5 g/. 3. A method according to claim 1, characterized in that the brightener (a) is present in an amount of 0.0005 to 1 g/g. 4 At least 25mg/~0.5g/ of the brightener (c)
2. A method as claimed in claim 1, characterized in that the method is present in an amount of . 5. The method according to claim 1, characterized in that the brightener (c) is present in an amount of 30 to 90 mg/. 6. During the electrodeposition of copper plating, the temperature of the acidic aqueous solution is
The method according to claim 1, further comprising the step of controlling the temperature within the range of 60° to 100° (16 to 38°C). 7. During the electrodeposition of copper plating, the temperature of the acidic aqueous solution is
The method of claim 1 further comprising the step of controlling within the range of 70 DEG to 90 DEG F. (21 DEG to 32 DEG C.). 8 The copper plating electrodeposition process on the substrate has an average current density
The method according to claim 1, characterized in that it is carried out at 300 ASF (32 A/Dm 2 ) or less. 9 The copper plating electrodeposition process on the substrate has an average current density
A method according to claim 1, characterized in that it is carried out at 100-200 ASF (11-22 A/ Dm2 ). 10. The method according to claim 1, characterized in that the acidic aqueous solution further contains 0.2 g/or less of halogen ions. 11 Adjust the relative position of the anode immersed in the solution to the substrate to 60 to 300 ASF (6.4
32 A/Dm 2 ).
The method described in section. 12 comprising a rotogravure cylinder in which the conductive substrate is immersed in the solution, and during the electrodeposition step of the copper plating, the cylinder is used to produce a copper plating of substantially uniform thickness; 2. The method of claim 1, further comprising the step of rotating.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US50121283A | 1983-06-10 | 1983-06-10 | |
US501212 | 1983-06-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS609891A JPS609891A (en) | 1985-01-18 |
JPS6112037B2 true JPS6112037B2 (en) | 1986-04-05 |
Family
ID=23992566
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59119716A Granted JPS609891A (en) | 1983-06-10 | 1984-06-11 | Copper electrodeposition |
Country Status (10)
Country | Link |
---|---|
JP (1) | JPS609891A (en) |
AU (1) | AU559896B2 (en) |
BR (1) | BR8402812A (en) |
CA (1) | CA1255622A (en) |
DE (1) | DE3421017A1 (en) |
ES (1) | ES533253A0 (en) |
FR (1) | FR2547836A1 (en) |
GB (1) | GB2141141B (en) |
IT (1) | IT1177790B (en) |
NL (1) | NL8401842A (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7556722B2 (en) | 1996-11-22 | 2009-07-07 | Metzger Hubert F | Electroplating apparatus |
US8298395B2 (en) | 1999-06-30 | 2012-10-30 | Chema Technology, Inc. | Electroplating apparatus |
DE10261852B3 (en) | 2002-12-20 | 2004-06-03 | Atotech Deutschland Gmbh | Mixture of di-, tri- and other oligomeric phenazinium compounds, used in copper electroplating bath for decorative plating or plating circuit board or semiconductor substrate, is prepared from monomer by diazotization and boiling |
JP4644447B2 (en) * | 2004-06-25 | 2011-03-02 | 株式会社日立製作所 | Method for manufacturing printed wiring board |
DE502006009414D1 (en) * | 2006-01-06 | 2011-06-09 | Enthone | ELECTROLYTE AND METHOD FOR SEPARATING A MATTE METAL LAYER |
US9243339B2 (en) | 2012-05-25 | 2016-01-26 | Trevor Pearson | Additives for producing copper electrodeposits having low oxygen content |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2882209A (en) * | 1957-05-20 | 1959-04-14 | Udylite Res Corp | Electrodeposition of copper from an acid bath |
NL291575A (en) * | 1962-04-16 | |||
US3328273A (en) * | 1966-08-15 | 1967-06-27 | Udylite Corp | Electro-deposition of copper from acidic baths |
ZA708430B (en) * | 1970-02-12 | 1971-09-29 | Udylite Corp | Electrodeposition of copper from acidic baths |
DE2039831C3 (en) * | 1970-06-06 | 1979-09-06 | Schering Ag, 1000 Berlin Und 4619 Bergkamen | Acid bath for the galvanic deposition of shiny copper coatings |
US3770598A (en) * | 1972-01-21 | 1973-11-06 | Oxy Metal Finishing Corp | Electrodeposition of copper from acid baths |
IT1046971B (en) * | 1975-03-11 | 1980-09-10 | Oxy Metal Industries Corp | Baths for electrodeposition of copper - contg soluble prod prepd by reacting alkoxylated polyalkylene-imine with alkylating agent |
CA1105045A (en) * | 1977-05-04 | 1981-07-14 | Hans G. Creutz (Deceased) | Electrodeposition of copper |
DE2746938C2 (en) * | 1977-10-17 | 1987-04-09 | Schering AG, 1000 Berlin und 4709 Bergkamen | Aqueous acid bath for the galvanic deposition of shiny and crack-free copper coatings and use of this bath |
US4272335A (en) * | 1980-02-19 | 1981-06-09 | Oxy Metal Industries Corporation | Composition and method for electrodeposition of copper |
US4336114A (en) * | 1981-03-26 | 1982-06-22 | Hooker Chemicals & Plastics Corp. | Electrodeposition of bright copper |
-
1984
- 1984-06-04 AU AU29034/84A patent/AU559896B2/en not_active Ceased
- 1984-06-06 DE DE19843421017 patent/DE3421017A1/en active Granted
- 1984-06-07 CA CA000456109A patent/CA1255622A/en not_active Expired
- 1984-06-08 IT IT48356/84A patent/IT1177790B/en active
- 1984-06-08 NL NL8401842A patent/NL8401842A/en not_active Application Discontinuation
- 1984-06-08 BR BR8402812A patent/BR8402812A/en unknown
- 1984-06-08 ES ES533253A patent/ES533253A0/en active Granted
- 1984-06-08 FR FR8409045A patent/FR2547836A1/en active Pending
- 1984-06-11 GB GB08414863A patent/GB2141141B/en not_active Expired
- 1984-06-11 JP JP59119716A patent/JPS609891A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
AU559896B2 (en) | 1987-03-26 |
CA1255622A (en) | 1989-06-13 |
GB2141141B (en) | 1987-01-07 |
GB8414863D0 (en) | 1984-07-18 |
IT8448356A0 (en) | 1984-06-08 |
DE3421017A1 (en) | 1984-12-13 |
IT1177790B (en) | 1987-08-26 |
GB2141141A (en) | 1984-12-12 |
ES8601337A1 (en) | 1985-10-16 |
BR8402812A (en) | 1985-05-21 |
AU2903484A (en) | 1984-12-13 |
JPS609891A (en) | 1985-01-18 |
FR2547836A1 (en) | 1984-12-28 |
DE3421017C2 (en) | 1987-08-27 |
ES533253A0 (en) | 1985-10-16 |
NL8401842A (en) | 1985-01-02 |
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