JPS61120009A - Level utilizing semiconductor sensor - Google Patents

Level utilizing semiconductor sensor

Info

Publication number
JPS61120009A
JPS61120009A JP24062384A JP24062384A JPS61120009A JP S61120009 A JPS61120009 A JP S61120009A JP 24062384 A JP24062384 A JP 24062384A JP 24062384 A JP24062384 A JP 24062384A JP S61120009 A JPS61120009 A JP S61120009A
Authority
JP
Japan
Prior art keywords
levelness
case
semiconductor sensor
measured
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24062384A
Other languages
Japanese (ja)
Inventor
Tomoyuki Saito
斎藤 知行
Masahiko Ishibe
石部 雅彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP24062384A priority Critical patent/JPS61120009A/en
Publication of JPS61120009A publication Critical patent/JPS61120009A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/26Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Abstract

PURPOSE:To measure levelness with high precision by arranging an optoelec tromotive force type semiconductor sensor in a case provided with a slit which stops down irradiation light at the upper part. CONSTITUTION:The level 1 is provided with the case 2, the slit 3 at the upper part of the case, and the optoelectromotive force type semiconductor sensor 4 at the internal bottom part of the case. Light entering the case 2 through the slit 3 illuminates the semiconductor sensor 4 to generate a potential difference between electrodes 5a and 5b positioned on the same plane parallel to a faying surface, and this electromotive force varies linearly, so the potential between the electrodes 5a and 5b is measured and utilized to measure the irradiation position of the light. When the levelness is measured, the level 1 on a body to be measured is irradiated with light and then the output signal of the level 1 is inputted to an MPU10 as a control signal through an amplifier 9 and compared with a reference signal to sends the position signal of a positioner 8 to a positioner controller 11. Thus, the levelness of the body 7 to be measured is known and the levelness is adjusted on the basis of said levelness.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は、被測定物の水平度を検出する水準器に係わり
、特に高精度の水平度検出に好適な水準器に関するもの
である。
DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a spirit level for detecting the levelness of an object to be measured, and particularly to a spirit level suitable for highly accurate levelness detection.

〔発明の背景〕[Background of the invention]

近年、半導体製造技術をはじめとする超精密加工技術の
発達に伴い、高精度の位置制御技術の確立が要求されて
いる。しかしながら、位置制御の精度は、検出端の精度
に依存するため、従来の水準器でに実現できず、新しい
検出端の実用化が期待されている。これに関連するもの
として、例えば従来の投射光による傾斜検出袋Wについ
ては、特公昭58−56718号公報がある。
In recent years, with the development of ultra-precision processing technology including semiconductor manufacturing technology, there has been a demand for the establishment of highly accurate position control technology. However, since the accuracy of position control depends on the accuracy of the detection end, it cannot be achieved with conventional leveling, and there are expectations for the practical use of new detection ends. Related to this is, for example, Japanese Patent Publication No. 58-56718 regarding a conventional tilt detection bag W using projected light.

〔発明の目的〕[Purpose of the invention]

本発明は、高精度の水平度を測定し得ろ半導体センサを
利用した水準器を提供することにある。
An object of the present invention is to provide a spirit level that uses a semiconductor sensor and can measure levelness with high precision.

〔発明の概要〕[Summary of the invention]

半導体センサは照射光量と出力電圧が非線形に対応する
ものが一般的であり、この特性では0N−OFF制御に
のみ適用可能であり、高精度の位置制御には適用できな
い。
Semiconductor sensors generally have a non-linear relationship between the amount of irradiated light and the output voltage, and this characteristic is applicable only to ON-OFF control and not to highly accurate position control.

本発明は、光線の照射位置により光起電力出力が直線的
に変化する横方向電圧効果を有する光起電力型半導体セ
ンサを検出端に用いて高精度の水平度を測定し得るよう
にしたものである。
The present invention uses a photovoltaic semiconductor sensor at the detection end that has a lateral voltage effect in which the photovoltaic output changes linearly depending on the irradiation position of the light beam, making it possible to measure horizontality with high precision. It is.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の一実施例を第1図、東2図により説明す
る。第1図、第2図において、lは水平器で、外部から
の外乱を防とするケース2、ケース2上部に設けられた
照射光を絞るスリット3、ケース2内底部に配置され、
上面両端に電極5a。
Hereinafter, one embodiment of the present invention will be explained with reference to FIG. 1 and FIG. In FIGS. 1 and 2, l is a level, which includes a case 2 to prevent external disturbances, a slit 3 provided at the top of the case 2 to narrow down the irradiated light, and a level located at the inner bottom of the case 2.
Electrodes 5a are provided at both ends of the upper surface.

5bを接続した検出素子である光線の照射位置により光
起電力出力が直線的に変化する光起電力型の半導体セン
サ4より構成されている。スリブト3からケース2内に
入射した光線は半導体センサ4上に照射され、半導体セ
ンサ4は光が照射されると接合面に平行方向、すなわち
、同一面に位置した電極5a、5b間に電位差を生じ、
この起電力1.を半導体センサ4上の位8(電極5a、
5b)により直線性をもって変化するため、半導体セン
サ4の1ilf!5a、Sb間の電位測定を行なうこと
により、光の照射位置測定に利用することができる。
It is composed of a photovoltaic type semiconductor sensor 4 whose photovoltaic force output changes linearly depending on the irradiation position of the light beam, which is a detection element connected to the photovoltaic sensor 5b. The light beam entering the case 2 from the sleeve 3 is irradiated onto the semiconductor sensor 4, and when the semiconductor sensor 4 is irradiated with the light, it creates a potential difference between the electrodes 5a and 5b located in a direction parallel to the bonding surface, that is, on the same surface. arise,
This electromotive force 1. 8 (electrode 5a,
5b), the 1ilf! of the semiconductor sensor 4 changes linearly. By measuring the potential between 5a and Sb, it can be used to measure the light irradiation position.

第3図は本発明による水準器を用いた位置制御装置の略
図で、6は光源、7は被測定物、8は被測定物7のポジ
シッナー、9はアンプ、10はMPU、11はポジショ
ナ−コントローラであって、光#6よりポジシ5ナー8
1.:セプトされた被測定物7上の水準器1に光を照射
すると、受光した水準器1からの出力信号は、アンプ9
を介してMPU10へ制御信号として入力される。M 
P U loに入力された信号は、M P U 10内
にて基準信号との比較を行ない、ボジンヨナーコントロ
ーラ11にポジショナ−8の位置制御信号を送って、被
1111定物7の水平度を調節する。
FIG. 3 is a schematic diagram of a position control device using a level according to the present invention, in which 6 is a light source, 7 is an object to be measured, 8 is a positioner for the object to be measured 7, 9 is an amplifier, 10 is an MPU, and 11 is a positioner. It is a controller, and the positive position 5 is 8 from light #6.
1. : When light is irradiated onto the spirit level 1 on the object to be measured 7 which has been intercepted, the output signal from the spirit level 1 which received the light is sent to the amplifier 9.
The signal is input as a control signal to the MPU 10 via. M
The signal input to the P U lo is compared with a reference signal in the M P U 10, and a position control signal for the positioner 8 is sent to the positioner controller 11 to control the horizontality of the fixed object 7. Adjust.

第4図は本発明による水準器を用いて被測定物の水平度
の測定例を示したものである。すなわち、被測定物7の
傾きにより、水準器1のケース2内に配置された半導体
センサ4に照射される光線の位置が変化するため、餌述
した如く半導体センサ4の電極5a、5b間の電位測定
により、第4図(イ)または@4図(ロ)の如き被測定
物7の傾きを高精度で測定することができる。
FIG. 4 shows an example of measuring the levelness of an object to be measured using the level according to the present invention. That is, since the position of the light beam irradiated to the semiconductor sensor 4 disposed in the case 2 of the spirit level 1 changes depending on the inclination of the object 7 to be measured, By measuring the electric potential, it is possible to measure the inclination of the object 7 to be measured as shown in FIG. 4 (a) or 4 (b) with high precision.

〔発明の効果〕〔Effect of the invention〕

本発明は以上述べたように、水準器の水平度検出端に光
線の照射位置により光起電力出力が直線的に変化する光
起電力型半導体センサを用いたものであるから、高精度
の水平度を連続的に測定することができると共に、微弱
な入射光線による測定が可能であるため、使用環境によ
る影響を受けることなく広範囲に適用することができる
As described above, the present invention uses a photovoltaic semiconductor sensor whose photovoltaic output varies linearly depending on the irradiation position of the light beam at the level detection end of the spirit level, so it is possible to achieve highly accurate leveling. Since it is possible to measure the power continuously and also to use weak incident light, it can be applied over a wide range of areas without being affected by the usage environment.

【図面の簡単な説明】[Brief explanation of drawings]

@1図は本発明による半導体センサを利用した水準器の
一実施例を略図で示した平面図、ff12図は同じく正
面図、第3図は本発明による水準器を用いた位置制御信
号の略図、第4図は本発明による水準器を用いて被測定
物の水平度の測定例を示した略図である。 ■・・・・・・水準器、2・・・・・・ケース、3・・
・・・・スリット、4・・・・・半導体センサ、5a、
5b・・・・・・電極、6・・・光源、7・・・・・・
被測定物、8・・・・・・ポジショナ−,9・・・・・
・アンプ、10・・・・・・MPU、11・・・・・・
ボジシコナーコントローラ 十1図 31′’211
@ Figure 1 is a plan view schematically showing an embodiment of a level using a semiconductor sensor according to the present invention, Figure ff12 is a front view of the same, and Figure 3 is a schematic diagram of a position control signal using a level according to the present invention. , FIG. 4 is a schematic diagram showing an example of measuring the levelness of an object to be measured using the spirit level according to the present invention. ■・・・Level, 2...Case, 3...
...Slit, 4...Semiconductor sensor, 5a,
5b... Electrode, 6... Light source, 7...
Measured object, 8...Positioner, 9...
・Amplifier, 10...MPU, 11...
Body controller 11 Figure 31''211

Claims (1)

【特許請求の範囲】[Claims] 1、上部に照射光を絞るスリットを設けたケース内に光
起電力型半導体センサを配置したことを特徴とする半導
体センサを利用した水準器。
1. A spirit level using a semiconductor sensor, characterized in that a photovoltaic semiconductor sensor is placed inside a case with a slit at the top to narrow down the irradiated light.
JP24062384A 1984-11-16 1984-11-16 Level utilizing semiconductor sensor Pending JPS61120009A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24062384A JPS61120009A (en) 1984-11-16 1984-11-16 Level utilizing semiconductor sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24062384A JPS61120009A (en) 1984-11-16 1984-11-16 Level utilizing semiconductor sensor

Publications (1)

Publication Number Publication Date
JPS61120009A true JPS61120009A (en) 1986-06-07

Family

ID=17062245

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24062384A Pending JPS61120009A (en) 1984-11-16 1984-11-16 Level utilizing semiconductor sensor

Country Status (1)

Country Link
JP (1) JPS61120009A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110470330A (en) * 2019-08-27 2019-11-19 昆明研顶技术开发有限公司 A kind of electrodeless rotary angle transmitter

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110470330A (en) * 2019-08-27 2019-11-19 昆明研顶技术开发有限公司 A kind of electrodeless rotary angle transmitter

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