JPS61119066A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS61119066A JPS61119066A JP24131784A JP24131784A JPS61119066A JP S61119066 A JPS61119066 A JP S61119066A JP 24131784 A JP24131784 A JP 24131784A JP 24131784 A JP24131784 A JP 24131784A JP S61119066 A JPS61119066 A JP S61119066A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- stem
- envelope
- harmful
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、ＧａＡｓ 半導体素子に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a GaAs semiconductor device.
ＧａＡｓ ｔ−材料とした半導体素子は、光通信用の
発光素子或はマイクロ波増幅用の電界効果トランジスタ
（ＦＥＴ ） 等として使用されている。Semiconductor elements made of GaAs t-material are used as light emitting elements for optical communication, field effect transistors (FET) for microwave amplification, and the like.
矛４図は、Ａｓのような有害な元素を、例えばＧａＡｓ
基板の状態で使用した所謂ＧａＡｓ半導体素子ｌを有す
る従来の半導体装置の断面図である。Figure 4 shows that harmful elements such as As are removed from GaAs, for example.
1 is a sectional view of a conventional semiconductor device having a so-called GaAs semiconductor element 1 used in the form of a substrate.
ＧａＡｓ半導体素子ｌは、ＡｕまたはＮｉメッキを施し
たＦｅ−Ｎｉ合成或は、Ｃｕ合金からなるステム２の所
定位置に半田層３を介しｔ装着されている。ステム２に
は、ｋ’ｅ −Ｎ ｉ合金からなるリードＩｆＭ４が貫
挿されている。リード線４は、熱膨張ψ数が金属に近い
封着ガラス５によりステム２に密着固定されている。Ｇ
ａＡｓ牛導体素子Ｉとリード線４間には、Ａｕ からな
るボンディング線６が架設されている。ステム２上に突
出したリードＩｗ４、ＧａＡｓ半導体素子ｌ、及びボン
ディング＠６は、ステム２上にこれらを不活性ガスで覆
うように気密に到着した外囲ｆＦｌ内に収容されている
。外囲器７は、Ｆｅ−Ｎｉ合金或はメッキを施したセラ
ミックを形成されている。A GaAs semiconductor element 1 is attached via a solder layer 3 to a predetermined position of a stem 2 made of a Fe--Ni composite or a Cu alloy plated with Au or Ni. A lead IfM4 made of k'e-Ni alloy is inserted through the stem 2. The lead wire 4 is closely fixed to the stem 2 by a sealing glass 5 whose thermal expansion ψ number is close to that of metal. G
A bonding wire 6 made of Au is installed between the aAs conductor element I and the lead wire 4. The lead Iw4, the GaAs semiconductor element l, and the bonding@6 protruding from the stem 2 are housed in an envelope fFl that has arrived on the stem 2 in an airtight manner so as to cover them with an inert gas. The envelope 7 is made of Fe--Ni alloy or plated ceramic.
上述のように構成された半導体装置ＩＯは、半導体素子
１１に構成する元素に人体に有害なＡｓを含んでいる。In the semiconductor device IO configured as described above, the semiconductor element 11 includes As, which is harmful to the human body.
Ａｓの場合７０〜１８０ｍｇが人体の致死量と言われて
いる。而して、ＧａＡｓは常温では安定であるが半導体
装置１Ｏｔ−焼却した場合のように扁温状態で酸化され
ると、下記式で示す通り亜砒酸（ＨＡｓ’、 ） ｆ発
生する０亜砒酸は水にも溶は易いため水汚染を起こす問
題がある。In the case of As, 70 to 180 mg is said to be a lethal dose for humans. Therefore, GaAs is stable at room temperature, but when it is oxidized at an ambient temperature, such as when a semiconductor device is incinerated, arsenous acid (HAs', ) f is generated as shown in the following formula. However, since it dissolves easily, there is a problem of water contamination.
２ＧａＡ３＋３０ｔ→ＡＳｔＯｓ（無水亜砒酸）＋Ｇａ
、０゜Ａｓ、Ｏ，＋Ｈ，Ｏ−＋ ２ＨＡ８０゜即ち、上
述のような半導体装置ＩＯは民生機器としても使用され
る。このため半導体装置１０ｔ−家庭で廃棄の際に焼却
すると有毒な砒素化合物が発生し、極めて危険である問
題があった。2GaA3+30t→AStOs (arsenous anhydride)+Ga
, 0° As, O, +H, O-+ 2HA80° That is, the semiconductor device IO as described above is also used as a consumer device. Therefore, when 10 tons of semiconductor devices are incinerated at home, toxic arsenic compounds are generated, which is extremely dangerous.
本発明は、上記問題点ｔＳ消するために、有害７ｃ素を
含む半導体素子を所定領域に装着したステムと、該ステ
ム上に前記半導体素子を気密に封止するように取付けら
れた外囲器と、核外囲器内に前記半導体素子をほぼ覆う
ようＫして設けられた該外囲器よりも低融点の被包部材
とを具備してなる半導体装置である◎
〔作用〕
本発明に係る半導体装置によれば、外囲器よりも低融点
の被包部材により有害光Ｘｔ−含む半導体素子を覆うよ
うにしたので、焼却処理等により外囲器を破壊する程度
の熱が半導体素子に加わると、被包部材が先ず溶融して
半導体素子を被包するため、有害元素が外部に飛散する
のを防止するものである。In order to eliminate the above-mentioned problem tS, the present invention provides a stem in which a semiconductor element containing harmful 7c elements is mounted in a predetermined area, and an envelope mounted on the stem so as to hermetically seal the semiconductor element. and an enveloping member having a lower melting point than the envelope, which is provided in a nuclear envelope so as to substantially cover the semiconductor element. [Function] The present invention has the following features: According to this semiconductor device, since the semiconductor element containing the harmful light Xt is covered with the enveloping member having a lower melting point than the envelope, the semiconductor element is not exposed to enough heat to destroy the envelope by incineration or the like. When added, the encapsulating member first melts and encapsulates the semiconductor element, thereby preventing harmful elements from scattering to the outside.
本発明に係る半導体装置によれば、廃棄時の焼却によっ
て有害物質が蒸発轡飛散するのを防止して、水汚染等の
環境破壊が起きるのを阻止できるものである。According to the semiconductor device according to the present invention, it is possible to prevent harmful substances from evaporating and scattering due to incineration at the time of disposal, thereby preventing environmental damage such as water pollution from occurring.
以下、本発明の真流例について図面を参照して説明する
。矛１図は、本発明の一実施例の断面図である。図中２
０は、ＡｕまたはＮｉメッキを施したＦｅ−Ｎｉ合金、
或はＣｕ合金からなるステムである。ステム２０の所定
領域には、Ａｓのような有害元素を含んだＧａＡｓ
基板を用いた半導体素子２１が半田層２２を介して装着
され℃いる。ステム２０には、Ｆｅ−Ｎｉ合金等からな
るリード線２３が貫挿され【いる。リード線２３は、熱
膨張係数が金属に近い封着ガラス２４によりステム２ｏ
に密着固定されている。Hereinafter, a true flow example of the present invention will be described with reference to the drawings. Figure 1 is a sectional view of one embodiment of the present invention. 2 in the diagram
0 is a Fe-Ni alloy plated with Au or Ni,
Alternatively, it is a stem made of Cu alloy. A predetermined region of the stem 20 contains GaAs containing harmful elements such as As.
A semiconductor element 21 using a substrate is mounted via a solder layer 22 and heated. A lead wire 23 made of Fe--Ni alloy or the like is inserted through the stem 20 . The lead wire 23 is connected to the stem 2o by a sealing glass 24 whose coefficient of thermal expansion is close to that of metal.
It is tightly fixed.
半導体素子２１ｔ−装着したステム２ｏの表面上に突出
したリード線２３の肩部と半導体素子２１間には、Ａｕ
等からなるボンディング線２５が架設されている。ス
テム２ｏＪ：、には、Ｆｅ −Ｎｉ 合金、或はメッ
キを施したセラミック等からなる外囲器２６が、半導体
素子２１、突出したリード線２３及びボンディング線２
５を気密に収容するように封着されている。外囲器２６
で囲まれた収容部２７内は、真空状態であっ℃も良いし
、或は１気圧以下の減圧状態であっても良い。収容部２
７内には、半導体素子２１をほぼ）うようにして外囲器
２６よりも低融点の被包部材２８が設けられている。被
包部材２８としては、例えばソーダ石灰ガラス（Ｎａ、
０−ＣａＯ−８ｉ０２ ）或は硼珪酸ガ２．ｚ（ＮａＯ
−Ｂ、０−８ｉ０２ ）のように半導体素子２１と濡水
性が良いもの程好ましい。また、被包部材２８の取付は
状態は、半導体素子２１の電気特性、光学特性に愚影響
を与えないように半導体素子２１から離間して設けるの
が望ましい。また、被包部材２８は、高温状態になった
時に溶融して半導体素子２１を被包するためのものだか
ら、適度の粘度ｔｖ！する必要がある。その理由は、ガ
ラス等からなる被包部材２８の粘度は、高温になるに従
って急激に低下し、外囲器２６の破壊と同時に外部に流
出して、半導体素子２１を被包する作用を失うからであ
る。このような場合には、軟化点の異なる部材を低軟化
温度のものから順に半導体素子２１の上方に対向して積
層した構造の被包部材２８を設けるのが望まし１．１０
このように構成された半導体装置３ｏによれば、廃棄等
のために焼却処理により加熱されても、外囲器２６が破
壊する前に被包部材２８が溶融してその直下の半導体素
子２１を被包する〇このため加熱時にＡｓ等の有害元素
が発生しても、溶融した被包部材２８によって封止され
るために外部に有害元素が飛散するのを防止できる。Between the semiconductor element 21t and the shoulder of the lead wire 23 protruding from the surface of the attached stem 2o, there is an Au layer.
A bonding wire 25 consisting of, etc. is installed. Stem 2oJ: , an envelope 26 made of Fe-Ni alloy, plated ceramic, or the like is attached to the semiconductor element 21, the protruding lead wires 23, and the bonding wires 2.
5 is hermetically sealed. Envelope 26
The inside of the housing section 27 surrounded by 27 may be in a vacuum state at a temperature of 0.degree. C., or may be in a reduced pressure state of 1 atmosphere or less. Accommodation part 2
An encasing member 28 having a melting point lower than that of the envelope 26 is provided within the envelope 7 so as to substantially enclose the semiconductor element 21 . As the enveloping member 28, for example, soda lime glass (Na,
0-CaO-8i02) or borosilicate gas2. z(NaO
-B, 0-8i02), which have better water wettability with the semiconductor element 21, are more preferable. Further, it is preferable that the enveloping member 28 be mounted at a distance from the semiconductor element 21 so as not to adversely affect the electrical characteristics and optical characteristics of the semiconductor element 21. Furthermore, since the enveloping member 28 is for melting and encasing the semiconductor element 21 when the temperature reaches a high temperature, the enveloping member 28 has an appropriate viscosity tv! There is a need to. The reason for this is that the viscosity of the encapsulant 28 made of glass or the like rapidly decreases as the temperature increases, and as soon as the envelope 26 is broken, it flows out and loses its ability to enclose the semiconductor element 21. It is. In such a case, it is desirable to provide an encasing member 28 having a structure in which members having different softening points are stacked facing each other above the semiconductor element 21 in order from the one with the lowest softening temperature. According to the semiconductor device 3o, even if it is heated by incineration for disposal or the like, the enveloping member 28 melts and encloses the semiconductor element 21 directly below it before the envelope 26 is destroyed. Therefore, even if harmful elements such as As are generated during heating, the molten enveloping member 28 seals, so that the harmful elements can be prevented from scattering to the outside.
更に、溶融後に冷却されても今度は被包部材２８が固化
して依然有参元素を外部に飛散することはない。その結
果、水汚染等が発生するのを防止して半導体装置３００
安全性を高めることができる。Furthermore, even if it is cooled after melting, the enveloping member 28 will solidify and the containing elements will not be scattered to the outside. As a result, the semiconductor device 300 is protected from water contamination and the like.
Safety can be increased.
なお、被包部材３２の取付は方としては、牙２図に示す
如く、被包部材３２ｔ−外囲器２６の内壁面から離して
半導体素子２１との間に隙間部ＪＪｉ設けるようにして
も良い。この場合には、被包部材３２は、表面張力の作
用により溶融時に速やかに半導体素子２１を被包するこ
とができる。更に、隙間部３１内の圧力ｔ−１気圧以下
にしてこの被包効果ヲ島めるようにしても良い。The enveloping member 32 may be attached by providing a gap JJi between the encasing member 32t and the semiconductor element 21 apart from the inner wall surface of the envelope 26, as shown in Fig. 2. good. In this case, the encapsulating member 32 can quickly encapsulate the semiconductor element 21 when melted due to the effect of surface tension. Furthermore, the encapsulation effect may be reduced by reducing the pressure within the gap 31 to t-1 atm or less.
また１、１？３図に示す如く、素子特性に悪影響を与え
ない場合には、被包部材３３を半導体素子２１に接触し
た状態で取付けても良い。この場合には、比較的耐熱温
度の亮い被包部材２３を用いて、半導体素子２１’ｉｆ
熱的に保護することができる。Further, as shown in FIGS. 1, 1 to 3, the enveloping member 33 may be attached in contact with the semiconductor element 21 if the element characteristics are not adversely affected. In this case, the semiconductor element 21'if
Can be thermally protected.
矛１図は、本発明の一実施例の断面図、矛２図及び矛３
図は、本発明の他の実施例の断面図、矛４図は、従来の
ＧａＡｓ半導体装置の断面図である。
２０・・・ステム、２１・・・半導体素子、２２・・・
半田層、２３・・・リード線、２４・・・封着ガラス、
２５・・・ボンディング線、２６・・・外囲器、２７・
・・収容部、２８・・・被包部材、３０・・・半導体装
置、３１・・・隙間部、３２・・・被包部材、３３・・
・被包部材、４０．５０・・・半導体装置。
出瓢人代理人 弁理士 鈴 江 武 彦第１図
第３図
第２図
鑑
第４図
胆Figure 1 is a sectional view of one embodiment of the present invention, Figure 2 and Figure 3 are
The figure is a sectional view of another embodiment of the present invention, and Figure 4 is a sectional view of a conventional GaAs semiconductor device. 20... Stem, 21... Semiconductor element, 22...
Solder layer, 23... Lead wire, 24... Sealing glass,
25... Bonding wire, 26... Envelope, 27.
...Accommodating part, 28... Encapsulating member, 30... Semiconductor device, 31... Gap part, 32... Encapsulating member, 33...
- Encapsulating member, 40.50... semiconductor device. Representative Patent Attorney Suzue Takehiko Figure 1 Figure 3 Figure 2 Illustrated Guide Figure 4
Claims (1)
ムと、該ステム上に前記半導体素子を気密に封止するよ
うに取付けられた外囲器と、該外囲器内に前記半導体素
子をほぼ覆うようにして設けられた該外囲器よりも低融
点の被包部材とを具備することを特徴とする半導体装置
。A stem having a semiconductor element containing a harmful element mounted in a predetermined area, an envelope attached to the stem so as to hermetically seal the semiconductor element, and the semiconductor element substantially covered within the envelope. 1. A semiconductor device comprising: an encasing member having a lower melting point than the envelope provided in this manner.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24131784A JPS61119066A (en) | 1984-11-15 | 1984-11-15 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24131784A JPS61119066A (en) | 1984-11-15 | 1984-11-15 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61119066A true JPS61119066A (en) | 1986-06-06 |
| JPH0367344B2 JPH0367344B2 (en) | 1991-10-22 |
Family
ID=17072489
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24131784A Granted JPS61119066A (en) | 1984-11-15 | 1984-11-15 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61119066A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050045323A (en) * | 2003-11-11 | 2005-05-17 | 삼성전기주식회사 | Method for improving hermetic of ceramic package and ceramic package prepared thereby |
-
1984
- 1984-11-15 JP JP24131784A patent/JPS61119066A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050045323A (en) * | 2003-11-11 | 2005-05-17 | 삼성전기주식회사 | Method for improving hermetic of ceramic package and ceramic package prepared thereby |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0367344B2 (en) | 1991-10-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4769345A (en) | Process for producing a hermetically sealed package for an electrical component containing a low amount of oxygen and water vapor | |
| US4480262A (en) | Semiconductor casing | |
| US4524238A (en) | Semiconductor packages | |
| US4461924A (en) | Semiconductor casing | |
| US4594770A (en) | Method of making semiconductor casing | |
| US6594916B2 (en) | Highly moisture-sensitive electronic device element and method for fabrication utilizing vent holes or gaps | |
| JPS6255301B2 (en) | ||
| US6261867B1 (en) | Method of making a package for microelectronic devices using iron oxide as a bonding agent | |
| US20030183916A1 (en) | Packaging microelectromechanical systems | |
| KR20080075015A (en) | Method for the deposition of a vaporizing material | |
| JPH08236660A (en) | Air-tightly sealed electronic package | |
| US4412093A (en) | Microcircuit flat pack with integral shell | |
| US8850698B2 (en) | Method for the sealed assembly of an electronic housing | |
| US3538597A (en) | Flatpack lid and method | |
| US5334874A (en) | Electronic device package | |
| JPS61119066A (en) | Semiconductor device | |
| EP0434312B1 (en) | Bonding a conductor to a substrate | |
| US3566212A (en) | High temperature semiconductor package | |
| US2903629A (en) | Encapsulated semiconductor assembly | |
| US8829496B2 (en) | Organic component and method for the production thereof | |
| JP2003100921A (en) | Container for optical semiconductor element | |
| JP2001332804A (en) | Semiconductor laser, and cap therefor and its manufacturing method | |
| US7377961B2 (en) | Hydrogen vent for optoelectronic packages with resistive thermal device (RTD) | |
| JPH0142354Y2 (en) | ||
| CN100499086C (en) | High wet sensitive electronic device element and its manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |