JPS61113763A - Electron bombardment type vapor depositing apparatus - Google Patents
Electron bombardment type vapor depositing apparatusInfo
- Publication number
- JPS61113763A JPS61113763A JP23542184A JP23542184A JPS61113763A JP S61113763 A JPS61113763 A JP S61113763A JP 23542184 A JP23542184 A JP 23542184A JP 23542184 A JP23542184 A JP 23542184A JP S61113763 A JPS61113763 A JP S61113763A
- Authority
- JP
- Japan
- Prior art keywords
- electron
- thin film
- gun
- evaporation source
- insulator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）発明の目的
（産業上の利用分野）
この発明は、電子衝撃型蒸着装置に関する。特にその蒸
発源が負に帯電することを防止する構造に関する。Detailed Description of the Invention (a) Object of the Invention (Field of Industrial Application) The present invention relates to an electron impact vapor deposition apparatus. In particular, the present invention relates to a structure that prevents the evaporation source from becoming negatively charged.
（従来の技術）
従来の電子衝撃型蒸着装置としては、電子線加熱型、磁
場偏向型等があり、いずれも電子銃を用いて電子ビーム
を薄膜材料に当て、そのごく一部だけを加熱し、薄膜材
料を蒸着させている。(Conventional technology) Conventional electron impact evaporation equipment includes an electron beam heating type and a magnetic field deflection type, both of which use an electron gun to irradiate an electron beam onto a thin film material and heat only a small portion of it. , depositing thin film materials.
（発明が解決しようとする問題点）
しかしながら、薄膜材料が絶縁体である場合、薄膜材料
蒸発源の材質も絶縁体を用いるため、電子銃からの電子
ビームにより、該蒸発源が負に帯電し、その結果、電子
ビームの走査を制御することや、該蒸発源上に照射する
ことが難しいと言う問題点がある。このことは、前記蒸
発源の絶縁性が高い程、大きな障害となる。(Problem to be Solved by the Invention) However, when the thin film material is an insulator, the material of the thin film material evaporation source is also an insulator, so the evaporation source is negatively charged by the electron beam from the electron gun. As a result, there are problems in that it is difficult to control the scanning of the electron beam and to irradiate it onto the evaporation source. The higher the insulation of the evaporation source, the greater the problem.
この発明は、以上の事情に鑑みてなされたものであって
、その主要な目的は、電子衝撃型蒸着装置に、更に陽イ
オンビーム照射手段としてのイオン銃を設けることによ
り、前記蒸発源が負に帯電するのを、このイオン銃から
の陽イオンビーム照射により防ぐことにある。The present invention has been made in view of the above circumstances, and its main purpose is to further provide an ion gun as a positive ion beam irradiation means to an electron impact evaporation apparatus, so that the evaporation source becomes negative. The aim is to prevent this from being charged by positive ion beam irradiation from this ion gun.
（ロ）発明の構成
この発明は、真空容器中に、電子銃、絶縁体か・らなる
薄膜材料蒸発源及び付着面を備えてなる電子衝撃型蒸着
装置において、前記電子銃からの電子ビームと同時に、
陽イオンビームを前記絶縁体からなる薄膜材料蒸発源上
に照射するイオン銃を更に前記真空容器中に設けたこと
を特徴とする電子衝撃型蒸着装置にある。(b) Structure of the Invention The present invention provides an electron impact evaporation apparatus comprising an electron gun, a thin film material evaporation source made of an insulator, and an attachment surface in a vacuum container. at the same time,
The electron impact evaporation apparatus is further characterized in that an ion gun for irradiating a positive ion beam onto the thin film material evaporation source made of an insulator is provided in the vacuum container.
（実施例）
以下、図に示す実施例に基づいてこの発明を詳述するが
、これによってこの発明が限定されるものではない。(Example) Hereinafter, the present invention will be described in detail based on the example shown in the drawings, but the present invention is not limited thereby.
第１図に本発明の磁場偏向型の電子衝撃型蒸着装置（１
）を示す。図において、電子衝撃型蒸着装置（１）は、
略つり鐘状のガラス製真空容器（２）をその本体とし、
かかる真空容器（２）は、その底部（１２）の一部に設
けられた排気口００）から真空ポンプ（図示省略）で、
１０−’Ｔｏ、ｒｒ以上の真空に保たれている。この底
部（１２）のほぼ中央に、冷却水が循環できるような冷
却水パイプ（９）の配備された試料台（１１）上に、１
絶縁体からなる薄膜材料蒸発源（５）が設
けられている。この蒸発源（５）上に薄膜材料が載置さ
れ、その試料台（１１）付近に設けられた電子銃（４）
からの電子ビームをマグネット等の手段により磁場を使
って曲げ、薄膜材料の一部に当たるようにしている。Figure 1 shows a magnetic field deflection type electron impact deposition apparatus (1) of the present invention.
) is shown. In the figure, the electron impact evaporation device (1) is
The main body is a glass vacuum container (2) in the shape of a hanging bell,
Such a vacuum container (2) is operated by a vacuum pump (not shown) from an exhaust port 00 provided in a part of its bottom (12).
It is maintained at a vacuum of 10-'To,rr or higher. On the sample stage (11), a cooling water pipe (9) for circulating cooling water is installed approximately in the center of the bottom (12).
A thin film material evaporation source (5) made of an insulator is provided. A thin film material is placed on this evaporation source (5), and an electron gun (4) is installed near the sample stage (11).
The electron beam is bent using a magnetic field by means such as a magnet so that it hits a portion of the thin film material.
一方、本発明ではアルゴンガスをイオン化したアルゴン
イオンを陽イオンビームとし、前記蒸発源（５）上に照
射できるよう真空容器（２）の側壁にイオン銃（３）が
設けられている。なお、かかる電子ビーム照射による蒸
発源（５）の負への帯電中和には、上記アルゴンイオン
の他に、ヘリクム、ネオン等の希ガスをイオン化したも
のも用いることができる。On the other hand, in the present invention, an ion gun (3) is provided on the side wall of the vacuum container (2) so that argon ions obtained by ionizing argon gas can be used as a positive ion beam and irradiated onto the evaporation source (5). In addition to the above argon ions, ionized rare gases such as helium and neon can also be used to neutralize the negative charge of the evaporation source (5) by electron beam irradiation.
また゛、薄膜材料への電子ビームの照射と蒸発源（５）
への陽イオンビームの照射は同時に行なわれ、各ビーム
の照射量、ビームの当たる位置等について前もって適当
なプログラムでもって各ビームの照射を制御すれば、更
に好ましいものとなる。Also, electron beam irradiation and evaporation source on thin film materials (5)
It would be more preferable if the irradiation of each beam with the positive ion beam is carried out simultaneously, and the irradiation of each beam is controlled in advance with an appropriate program regarding the irradiation amount of each beam, the position of the beam, etc.
このようにして電子ビームの照射された薄膜材料は蒸発
し、真空容器（２）上方に設置されている付着面（６）
に蒸着される。In this way, the thin film material irradiated with the electron beam evaporates, and the adhesion surface (6) installed above the vacuum container (2)
is deposited on.
かかる付着面（６）は通常、ヒーター（８）を備えた適
当な基板支持体（７）に係止されており・更に支持棒
１）（１３）で真空容器（２）上部に設置され
ている。Such an adhesion surface (6) is usually anchored to a suitable substrate support (7) equipped with a heater (8) and also a support rod.
1) (13) is installed on the top of the vacuum container (2).
以上のごとく電子衝撃型蒸着装置（１１を構成すること
によって、電子ビームにより負に帯電した蒸発源（５）
を、陽イオンビーム照射により電気的に中和することが
できる。By configuring the electron impact evaporation apparatus (11) as described above, the evaporation source (5) negatively charged by the electron beam
can be electrically neutralized by positive ion beam irradiation.
（ハ）発明の効果
この発明は、電子衝撃型蒸着装置に、イオン銃を備えて
おり、電子銃からの薄膜材料への電子ビームと同時に、
前記イオン銃からの陽イオンビームを蒸発源上に照射す
るものであるから、電子ビームによる負の帯電をおさえ
るため、電子ビームの電流及び電子ビームの絞り込み等
の電子ビームの薄膜材料への制御性が良くなり、これに
より薄膜作製の再現性が向上し、非常に優れた効果を有
するものである。(c) Effects of the invention In this invention, an electron impact vapor deposition apparatus is equipped with an ion gun, and the electron beam from the electron gun is simultaneously applied to the thin film material.
Since the positive ion beam from the ion gun is irradiated onto the evaporation source, in order to suppress negative charging caused by the electron beam, controllability of the electron beam to the thin film material such as the electron beam current and electron beam focusing is required. This improves the reproducibility of thin film production and has very excellent effects.
第１図は、この発明に係る電子衝撃型蒸着装置の一実施
例を示す縦断面図である。
（ＩＬ−−一電子衝撃型蒸着装置、（２Ｌ−真空容器、
（３） −イオン銃、（４１−電子銃、（５１−絶縁体
からなる薄膜材料蒸発源・（６）−゛付着面・
ヨ１．−代理人 弁理士 野 河 信 太
部゛・第１図FIG. 1 is a longitudinal sectional view showing an embodiment of an electron impact vapor deposition apparatus according to the present invention. (IL--1 electron impact evaporation device, (2L-vacuum vessel,
(3) - Ion gun, (41 - Electron gun, (51 - Thin film material evaporation source made of insulator), (6) - Adhesion surface,
Yo1. - Agent: Patent Attorney Nobuo Nogawa, Figure 1
Claims (1)
発源及び付着面を備えてなる電子衝撃型蒸着装置におい
て、前記電子銃からの電子ビームと同時に、陽イオンビ
ームを前記絶縁体からなる薄膜材料蒸発源上に照射する
イオン銃を更に前記真空容器中に設けたことを特徴とす
る電子衝撃型蒸着装置。1. In an electron impact evaporation apparatus comprising an electron gun, a thin film material evaporation source made of an insulator, and an attachment surface in a vacuum container, a cation beam is emitted from the insulator simultaneously with the electron beam from the electron gun. An electron impact type evaporation apparatus characterized in that an ion gun for irradiating onto a thin film material evaporation source is further provided in the vacuum container.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23542184A JPS61113763A (en) | 1984-11-08 | 1984-11-08 | Electron bombardment type vapor depositing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23542184A JPS61113763A (en) | 1984-11-08 | 1984-11-08 | Electron bombardment type vapor depositing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61113763A true JPS61113763A (en) | 1986-05-31 |
Family
ID=16985850
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23542184A Pending JPS61113763A (en) | 1984-11-08 | 1984-11-08 | Electron bombardment type vapor depositing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61113763A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58221274A (en) * | 1982-06-14 | 1983-12-22 | Fujitsu Ltd | Manufacture of thin film |
-
1984
- 1984-11-08 JP JP23542184A patent/JPS61113763A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58221274A (en) * | 1982-06-14 | 1983-12-22 | Fujitsu Ltd | Manufacture of thin film |
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