JPS61111586A - Manufacture of amorphous silicon solar cell - Google Patents

Manufacture of amorphous silicon solar cell

Info

Publication number
JPS61111586A
JPS61111586A JP23426284A JP23426284A JPS61111586A JP S61111586 A JPS61111586 A JP S61111586A JP 23426284 A JP23426284 A JP 23426284A JP 23426284 A JP23426284 A JP 23426284A JP S61111586 A JPS61111586 A JP S61111586A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
cell
amorphous
solar
temperature
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23426284A
Inventor
Katsuhiko Nomoto
Hitoshi Sannomiya
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
    • H01L31/20Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product
    • Y02P70/52Manufacturing of products or systems for producing renewable energy
    • Y02P70/521Photovoltaic generators

Abstract

PURPOSE:To prevent the deterioration in characteristic of the solar cell by a method wherein the clear conductive film of a solar cell having amorphous Si layers is adhered by sputtering at low temperature. CONSTITUTION:Using a stainless steel substrate 1 as the substrate of a solar cell, an amorphous Si P-layer 2 is formed by a plasma CVD apparatus in a mixed atmosphere of SiH4, B2H6, and H2 at a substrate temperature of 150-250 deg.C. Next, an amorphous Si I-layer 3 is formed in a mixed atmosphere of SiH4 and H2, and an amorphous Si N-layer 4 is formed in a mixed atmosphre of SiH4, PH3, and H2. Finally, a clear conductive film 5 is adhered by using a magnetron sputtering apparatus. Since the substrate temperature at the time of adhering the clear conductive film is thus kept at low temperature, the photoelectric conversion efficiency of the solar cell can be markedly improved.
JP23426284A 1984-11-06 1984-11-06 Manufacture of amorphous silicon solar cell Pending JPS61111586A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23426284A JPS61111586A (en) 1984-11-06 1984-11-06 Manufacture of amorphous silicon solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23426284A JPS61111586A (en) 1984-11-06 1984-11-06 Manufacture of amorphous silicon solar cell

Publications (1)

Publication Number Publication Date
JPS61111586A true true JPS61111586A (en) 1986-05-29

Family

ID=16968212

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23426284A Pending JPS61111586A (en) 1984-11-06 1984-11-06 Manufacture of amorphous silicon solar cell

Country Status (1)

Country Link
JP (1) JPS61111586A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05218469A (en) * 1992-02-05 1993-08-27 Canon Inc Photovoltaic element and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05218469A (en) * 1992-02-05 1993-08-27 Canon Inc Photovoltaic element and manufacture thereof

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