JPS61111535A - X-ray exposure method - Google Patents
X-ray exposure methodInfo
- Publication number
- JPS61111535A JPS61111535A JP60215085A JP21508585A JPS61111535A JP S61111535 A JPS61111535 A JP S61111535A JP 60215085 A JP60215085 A JP 60215085A JP 21508585 A JP21508585 A JP 21508585A JP S61111535 A JPS61111535 A JP S61111535A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- wafer
- rays
- exposure method
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 17
- 230000003287 optical effect Effects 0.000 claims abstract description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052799 carbon Inorganic materials 0.000 abstract description 4
- 238000001514 detection method Methods 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 3
- 230000002194 synthesizing effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 239000010931 gold Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はエックス線露光方法に関し、特にマスクパター
ンをエックス線により半導体ウェハ上に露光する方法に
関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an X-ray exposure method, and more particularly to a method for exposing a mask pattern onto a semiconductor wafer using X-rays.
Ｘ線露光方法として、第１図に示すように真空系６内の
水冷アルミニウム製回転ターゲット３に電子線４を当て
てＸ線を発生させ、このＸ線５をターゲットより約３０
６ｎ離れたマスク２を通して半導体ウェハ１上に露光さ
せることが提案されている。このような方法においては
、あらゆる方向ＫＸ＃が発生し、指向性が良くないため
に、マスクとウェハを１０μｍｌａ下程度に極めて近接
した状態で露光を施す必要があり、この接近中の制御が
むずかしく上記間隔Ｈの制御はかなりの熟練を要する作
業となる。また、ウェハとマスクとの位置合わせ又は目
合わせ操作は第２図に示すごとく透明なマスク２上の金
（Ａｕ）のマスクパターン７と半導体ウェハ１上のパタ
ーンとを光（可視光）の焦点深度内で各々の反射光パタ
ーンをマスク上から見ながら行うことが必要であり、従
ってマスりはＸ線に対して透明であると同時に光学的に
も透明な材料で基体部を構成する必要がある等の制限が
ある。As an X-ray exposure method, as shown in FIG. 1, an electron beam 4 is applied to a water-cooled aluminum rotating target 3 in a vacuum system 6 to generate X-rays.
It has been proposed to expose the semiconductor wafer 1 through a mask 2 separated by 6n. In this method, KX# occurs in all directions and the directivity is poor, so it is necessary to perform exposure with the mask and wafer extremely close to each other, about 10 μm la, and it is difficult to control during this approach. Controlling the above-mentioned interval H requires considerable skill. In addition, as shown in FIG. 2, the positioning or alignment operation between the wafer and the mask is performed by focusing light (visible light) on the gold (Au) mask pattern 7 on the transparent mask 2 and the pattern on the semiconductor wafer 1. It is necessary to perform this while viewing each reflected light pattern from above the mask within the depth, and therefore the base of the mask must be made of a material that is transparent to X-rays and at the same time optically transparent. There are some restrictions.
尚、Ｘ線があらゆる方向に発生するＸ線源を用いたＸ線
露光方法については、％開昭５４−４８１７４に記載さ
れている。Incidentally, an X-ray exposure method using an X-ray source that generates X-rays in all directions is described in % Japanese Patent Publication No. 54-48174.
本発明は上述の如き従来技術の欠点を解消しうる改良さ
れたＸ線露光方法を提供するなどの目的でなされたもの
である。The present invention has been made for the purpose of providing an improved X-ray exposure method capable of overcoming the drawbacks of the prior art as described above.
更に具体的には、本発明はウニノ・とマスクとの間の間
隔を大きく取ることができ、マスク材が光学的にも不透
明でよい状態での高精度合せ機能をもつＸ線露光方法な
どを提供することを目的とする。More specifically, the present invention provides an X-ray exposure method that allows for a large distance between the mask and the mask, and has a high-precision alignment function in a state where the mask material is optically opaque. The purpose is to provide.
本発明の一実施例によれば、マスクとウニノー（被露光
体）とを１０〜数１０腿程度の間隔をおいて千行く固定
し、上記マスクとウニノ・にはそれぞれ独立の入射光す
なわち光線を与えてそれぞれの表面から光学的に位置信
号を得て両者間の位置合わせを行ない１例えばシンクロ
トロンの如き高い指向性を有するＸ線を発生しうるＸ線
源を用℃・て露光を施こすことによってその目的を達成
することができる。According to one embodiment of the present invention, the mask and the object to be exposed are fixed at a distance of about 10 to several tens of feet, and the mask and the object are each exposed to independent incident light, that is, light beams. Then, position signals are obtained optically from each surface to align the two, and exposure is performed using an X-ray source that can generate X-rays with high directivity, such as a synchrotron. This purpose can be achieved by rubbing.
以下、本発明の一実施例を図面を参考にして説明する。An embodiment of the present invention will be described below with reference to the drawings.
まず、第３図は本発明の一実施例において用いられるシ
ンクロトロンによる指向性の良いＸ線の発生を説明する
ためのものであり、加速された電子ｅ−の回転軌道の接
線Ａ −Ａ’方向にψ及びθなる角をもったＸ１ｌｌ１
５が発生する。例えばθ値は１ミリラジアン、ψ値は１
０ミリラジアン糧度であろう
今、この指向性の良いＸ線源を用いて露光する場合につ
いて説明すると、第４図に示すとと（。First, FIG. 3 is for explaining the generation of X-rays with good directionality by the synchrotron used in one embodiment of the present invention, and shows the tangent line A-A' of the rotating orbit of the accelerated electron e-. X1ll1 with angles ψ and θ in the direction
5 occurs. For example, the θ value is 1 milliradian, and the ψ value is 1.
To explain the case of exposure using this highly directional X-ray source, the radiation density is probably 0 milliradian, as shown in Fig. 4.
Ｘ線１５０指向性がよいためにマスク１２と半導体ウェ
ハ１１との間の間隔は数σ離しても転写固形精度はさほ
ど劣化せず、そのためマスク１２とウェハ１１とは各々
独立の可視領域の光学系により入射光１９．１８と反射
光の出し入れが可能とナリ、各々のパターン図形に一致
した元図形信号（位置信号）を検出手段２０により検知
してウェハとマスクの位置関係を制御し正確に位置合せ
を行うことなどが可能となる。なお、同図において１７
は例えば金（Ａｕ）等のＸ線を透過しない材料で形成さ
れたマスクパターンを、１４はミラーを、１６はハーフ
ミラ−を夫々示している。また。Due to the good directivity of the X-ray 150, the transfer accuracy does not deteriorate much even if the distance between the mask 12 and the semiconductor wafer 11 is several σ, and therefore the mask 12 and the wafer 11 each have an independent optical range in the visible range. The system allows input and output of incident light 19.18 and reflected light, and the detection means 20 detects the original figure signal (position signal) corresponding to each pattern figure to accurately control the positional relationship between the wafer and the mask. It becomes possible to perform alignment. In addition, in the same figure, 17
14 represents a mask pattern formed of a material that does not transmit X-rays such as gold (Au), 14 represents a mirror, and 16 represents a half mirror. Also.
被露光体である半導体ウニノ・１１には予じめその内部
及び表面上に半導体拡散領域やｓｔｏｗ等の絶縁膜か形
成されており同図では簡略化のため省略されている。A semiconductor diffusion region and an insulating film such as a stow are previously formed inside and on the surface of the semiconductor unit 11 which is the object to be exposed, and these are omitted in the figure for the sake of simplification.
上記の如き本発明に係る一実施例の方法によれば、マス
ク１２の基体はあえて光学的に（可視光領域で）透明で
ある必要はなく、例えば炭素（カーボン）の如く、光学
的に不透明でもＸ線に対し透過率の良い材料で構成する
ことができるので、比較的安価な露光装置をうろことが
できる。又。According to the method of the embodiment of the present invention as described above, the base of the mask 12 does not need to be optically transparent (in the visible light region), but is made of optically opaque material such as carbon. However, since it can be constructed from a material that has good transmittance to X-rays, it is possible to use relatively inexpensive exposure equipment. or.
炭素以外にもベリリウム又はそれらの化合物を基材とす
るマスクも使用することかできる。In addition to carbon, masks based on beryllium or compounds thereof can also be used.
更に、本発明に係る一実施例の方法によれば。Further, according to an embodiment of the method according to the present invention.
ウェハ（被露光体）のパターン図形信号をマスク基板を
透過せずに独立に、又、Ｘ線露光系とは分離して、検出
することができ、従って又、Ｘ線源をマスクのほぼ中心
位置の上方に設置することができ、より正確な位置合せ
操作及び露光などが簡単にできる。The pattern graphic signal of the wafer (exposed object) can be detected independently without passing through the mask substrate, and separately from the X-ray exposure system. Therefore, the X-ray source can be detected almost at the center of the mask. It can be installed above the position, making it easier to perform more accurate positioning operations and exposure.
次に、第５図をもとに本発明に係る具体的な露光装置の
一例を説明する。Next, a specific example of an exposure apparatus according to the present invention will be explained based on FIG.
第５図は本発明の一実施例に用いる露光装置を示す模式
図であり、シリコンウニノ・２１と炭素（カーボン）基
板で作られたマスク２２とは約１０罪程度の間隔をおい
て平行に固定され５両者の位置合せ又は目合わせは、光
源３１からの光（可視光）３２をハーフミラ−３３によ
って二分して上記ウェハ２１およびマスク２２上にそれ
ぞれ独立して入射せしめて得られる二つの反射光３４お
よび３５をミラー２４および２６によって一つの光軸３
８上に合成し、適宜の光学系３９を介して上記ウェハ２
１およびマスク２２のパターンノ一致を検知手段（例え
ば目）３０によって観測することによってなされる。露
光はシンクロトロン２３から放射される指向性の高いＸ
線２５によってなされる。ここで、シンクロトロン２３
においては、加速された電子の回転軌道の接線方向にψ
およびθの角度で拡がるＸ線２５が発生するが、上記ψ
は１０ミリラジアン、θは１ミリラジアン程度であり、
その指向性は極めて高く、前記ウェハ２１とマスク２２
との間隔を１０〜数１０朋程度に広げてもマスクパター
ン２７のウェハ上への投影精度はほとんど劣化すること
がない。FIG. 5 is a schematic diagram showing an exposure apparatus used in an embodiment of the present invention, in which a silicon Unino 21 and a mask 22 made of a carbon substrate are placed in parallel with an interval of about 10 mm. The alignment or alignment of the fixed wafer 21 and the mask 22 is achieved by dividing the light (visible light) 32 from the light source 31 into two by a half mirror 33 and making it enter the wafer 21 and the mask 22 independently. Lights 34 and 35 are connected to one optical axis 3 by mirrors 24 and 26.
onto the wafer 2 through an appropriate optical system 39.
1 and the mask 22 by observing the matching of the patterns by a sensing means (eg, the eye) 30. Exposure is with highly directional X emitted from the synchrotron 23
This is done by line 25. Here, synchrotron 23
, ψ in the tangential direction of the rotating orbit of the accelerated electron
An X-ray 25 is generated which spreads at an angle of θ and θ, but the above ψ
is 10 milliradian, θ is about 1 milliradian,
Its directivity is extremely high, and the wafer 21 and mask 22
Even if the distance between the mask pattern 27 and the mask pattern 27 is widened to about 10 to several tens of mm, the accuracy of projection of the mask pattern 27 onto the wafer will hardly deteriorate.
以上述べた如く本発明の一実施例によれば、マスク上か
らウェハを透視することなく高精度の目合わせが可能で
あり、したがってマスク基体材料に必ずしも透明性の材
料を用いる必要はなく、可視光に対し不透明であるが軟
Ｘ線に対して透過性の良い材料を用いることなどが可能
となり、しかも位置合せ、露光等の精度及び操作性など
も改善される。As described above, according to one embodiment of the present invention, highly accurate alignment is possible without looking through the wafer from above the mask, so it is not necessary to use a transparent material for the mask base material, and It becomes possible to use a material that is opaque to light but highly transparent to soft X-rays, and the accuracy and operability of alignment, exposure, etc. are also improved.
第１図及び第２図はＸ線露光方法を説明するための模式
図、第３図は本発明の一実施例に係るＸ線露光方法忙使
用されるシンクロトロンによるＸ線発生装置の模式図、
第４図は本発明の一実施例に係るＸ線露光方法を説明す
るだめの模式図、第５図は本発明の一実施例に用いる具
体的なＸ線露光装置の構成図である。
１．１１．２１・・・半導体ウェハ％２，１２゜２２・
・・マスク、９．３１・・・光源、８，１４，１６゜２
４．２６，３３．３６・・・ミラー、１０，２０゜３０
・・・パターン信号検出手段、３９・・・光学系、２３
・・・シンクロトロン。
第 １ ３ 第 ２ 間第
０ 図FIGS. 1 and 2 are schematic diagrams for explaining the X-ray exposure method, and FIG. 3 is a schematic diagram of an X-ray generator using a synchrotron used in the X-ray exposure method according to an embodiment of the present invention. ,
FIG. 4 is a schematic diagram for explaining an X-ray exposure method according to an embodiment of the present invention, and FIG. 5 is a configuration diagram of a specific X-ray exposure apparatus used in an embodiment of the present invention. 1.11.21...Semiconductor wafer%2,12゜22・
・・Mask, 9.31 ・・Light source, 8, 14, 16°2
4.26, 33.36...Mirror, 10, 20°30
... pattern signal detection means, 39 ... optical system, 23
... Synchrotron. 1st 3rd period 2nd period
0 figure
Claims (1)
おいて固定する工程と （ｂ）上記板状物と上記被露光体との表面に光線を入射
することによって、上記板状物と上記被露光体との表面
の形状を光学的な信号として取り出す工程と （ｃ）上記信号をもとに上記板状物と上記被露光体との
間の位置合わせを行なう工程と （ｄ）Ｘ線により露光を行なう工程と からなることを特徴とするＸ線露光方法。 ２、上記信号が、上記板状物と上記被露光体との表面に
別々に入射された光線によって得られた光学的な位置信
号であり、また、上記Ｘ線がシンクロトロンによって発
生させられたＸ線であることを特徴とする特許請求の範
囲第１項記載のＸ線露光方法。[Claims] 1. (a) fixing a plate-like object on which a figure is drawn and an object to be exposed at a distance; and (b) applying light to the surfaces of the plate-like object and the object to be exposed. (c) extracting the surface shapes of the plate-shaped object and the exposed object as an optical signal by inputting the An X-ray exposure method characterized by comprising the steps of (d) aligning the positions of (d) and (d) exposing to X-rays. 2. The above signal is an optical position signal obtained by light beams separately incident on the surfaces of the plate-like object and the exposed object, and the X-rays are generated by a synchrotron. The X-ray exposure method according to claim 1, characterized in that the exposure method is X-rays.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60215085A JPS61111535A (en) | 1985-09-30 | 1985-09-30 | X-ray exposure method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60215085A JPS61111535A (en) | 1985-09-30 | 1985-09-30 | X-ray exposure method |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1977079A Division JPS55113330A (en) | 1979-02-23 | 1979-02-23 | X-ray exposure system and device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61111535A true JPS61111535A (en) | 1986-05-29 |
| JPS62572B2 JPS62572B2 (en) | 1987-01-08 |
Family
ID=16666500
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60215085A Granted JPS61111535A (en) | 1985-09-30 | 1985-09-30 | X-ray exposure method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61111535A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5057656A (en) * | 1973-09-17 | 1975-05-20 | ||
| JPS5057778A (en) * | 1973-09-17 | 1975-05-20 |
-
1985
- 1985-09-30 JP JP60215085A patent/JPS61111535A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5057656A (en) * | 1973-09-17 | 1975-05-20 | ||
| JPS5057778A (en) * | 1973-09-17 | 1975-05-20 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62572B2 (en) | 1987-01-08 |
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