JPS61111536A - X-ray exposure planar substance - Google Patents
X-ray exposure planar substanceInfo
- Publication number
- JPS61111536A JPS61111536A JP60215086A JP21508685A JPS61111536A JP S61111536 A JPS61111536 A JP S61111536A JP 60215086 A JP60215086 A JP 60215086A JP 21508685 A JP21508685 A JP 21508685A JP S61111536 A JPS61111536 A JP S61111536A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- wafer
- rays
- pattern
- ray exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000126 substance Substances 0.000 title abstract 3
- 239000000463 material Substances 0.000 claims abstract description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 4
- 229910052790 beryllium Inorganic materials 0.000 claims description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 6
- 230000003287 optical effect Effects 0.000 abstract description 5
- 238000001514 detection method Methods 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 3
- 238000010276 construction Methods 0.000 abstract 1
- 238000013518 transcription Methods 0.000 abstract 1
- 230000035897 transcription Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 7
- 239000010931 gold Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000003134 recirculating effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】 以下余白 本発明はエックス線露光用板状物などに関し。[Detailed description of the invention] Margin below The present invention relates to a plate-like object for X-ray exposure.
特にマスクパターンをエックス線により半導体ウェハ上
に露光するのに用いる板状物などに関するものである。In particular, it relates to a plate-like object used to expose a mask pattern onto a semiconductor wafer using X-rays.
Ｘ線露光方式として、第１図に示すように真空系６内の
水冷アルミニウム製回転ターゲッ）３に電子線４を当て
てｘｉを発生させ、このＸＩ［ｊ５をターゲットより約
３０ｃｒｎ離れたマスク２を通して半導体ウェハ１上！
ｌｃＮ光させることが提案されている。このような方
忙おいては、あらゆる方向ＫＸ線が発生し、指向性が良
くないために、マスクとウェハを１０μｍ以下程度に極
めて近接した状態で露光を施す必要があり、この接近中
の制御がむずかしく上記間隔Ｈの制御はかなりの熟練を
要する作業となる。また、ウェハとマスクとの位置合わ
せ又は目合わせ操作は第２図に示すごと（透明なマスク
２上の金（Ａｕ）のマスクパターン７と半導体ウェハ１
上のパターンとを光（可視光）の焦点深度内で各々の反
射光パターンをマスク上から見ながら行うことが必要で
あり、従ってマスりはＸ線に対して透明であると同時に
光学的にも透明な材料で基体部を構成する必要がある等
の制限がある。As an X-ray exposure method, as shown in Fig. 1, an electron beam 4 is applied to a water-cooled aluminum rotating target 3 in a vacuum system 6 to generate xi, and this XI[j5 is exposed to a mask 2 approximately 30 crn away from the target. Semiconductor wafer 1 through!
It has been proposed to emit lcN light. People like this
During busy periods, KX-rays are generated in all directions and the directivity is poor, so it is necessary to perform exposure with the mask and wafer extremely close to each other, approximately 10 μm or less, and it is difficult to control the distance between the mask and wafer. Controlling H requires considerable skill. In addition, the alignment or alignment operation between the wafer and the mask is as shown in FIG.
It is necessary to perform the above pattern while viewing each reflected light pattern from above the mask within the focal depth of light (visible light), so the mask is transparent to X-rays and at the same time optically transparent. However, there are limitations such as the need for the base portion to be made of a transparent material.
尚、光学的に不透明な材料を用いたＸ線露光用マスクに
ついては、特開昭５５−１０１９４５に記載されている
。Incidentally, an X-ray exposure mask using an optically opaque material is described in JP-A-55-101945.
本発明は上述の如き従来技術の欠点を解消しうる改良さ
れたＸ線露光用板状物などを提供する目的でなされたも
のである。The present invention has been made for the purpose of providing an improved plate for X-ray exposure that can overcome the drawbacks of the prior art as described above.
更に具体的には、本発明はウェハすなわち被露光体とマ
スクすなわち板状物との間の間隔を大きく取ることがで
き、マスク材が光学的にも不透明でよい状態での高精度
合せ機能をもつＸ線露光装置用板状物などを提供するこ
とを目的とする。More specifically, the present invention makes it possible to increase the distance between the wafer, that is, the object to be exposed, and the mask, that is, the plate-like object, and to achieve a high-precision alignment function in a state where the mask material is optically opaque. The purpose of this invention is to provide a plate-like material for use in an X-ray exposure device.
本発明の一実施例による光学的に不透明な材質を用いた
マスクでもマスクとウェハ（被露光体）とを１０〜数１
０鴎程度の間隔をおいて平行に固定し、上記マスクとウ
ェハにはそれぞれ独立の入射光を与えてそれぞれの表面
から光学的に位置信号を得て両者間の位置合わせを行な
い、例えばシンクロトロンの如き高い指向性を有するＸ
線を発生しうるＸ線源を用いて露光することができその
目的を達成することができる。Even with a mask using an optically opaque material according to an embodiment of the present invention, the distance between the mask and the wafer (exposed object) is 10 to several 1.
The mask and wafer are fixed parallel to each other with an interval of about 0.0 mm, and independent incident light is applied to the mask and wafer to obtain position signals optically from each surface to align the two, for example, using a synchrotron. X with high directivity such as
Exposure can be performed using an X-ray source capable of generating radiation, and the purpose can be achieved.
以下、本発明の一実施例を図面を参考にして説明する。An embodiment of the present invention will be described below with reference to the drawings.
まず、第３図は本発明の一実施例において用いられるシ
ンクロトロンによる指向性の良いＸ線の発生を説明する
ためのものであり、加速された電子ｅ−の回転軌道の接
線Ａ−Ａ方向にψ及びθなる角をもったＸ線１５が発生
する。例えばθ値は１ミリラジアン、ψ値は１０ミリラ
ジアン程度である。First, FIG. 3 is for explaining the generation of X-rays with good directionality by the synchrotron used in one embodiment of the present invention, and shows the direction of the tangent line A-A of the rotating orbit of the accelerated electron e. X-rays 15 having angles ψ and θ are generated. For example, the θ value is about 1 milliradian, and the ψ value is about 10 milliradian.
今、この指向性の良いＸ線源を用いて露光する場合につ
いて説明すると、Ｗｃ４図に示すごとく、Ｘ線１５０指
向性がよいためにマスク１２と半導体ウェハ１１との間
の間隔は数備離しても転写図形精度はさほど劣化せず、
そのためマスク１２とウェハ１１とは各々独立の可視領
域の光学系により入射光１９．１８と反射光の出し入れ
が可能となり、各々のパターン図形に一致した元図形信
号（位置信号）を検出手段２０により検知してウェハと
マスクの位置関係を制御し正確に位置合せを行うことが
可能となる。なお、同図において１７は例えば金（Ａｕ
）等のＸ線を透過しない材料で形成されたマスクパター
ンを、１４はミラーを、１６はハーフミラ−を夫々示し
ている。また、被露光体である半導体ウェハ１１には予
じめその内部及び表面上に半導体拡散領域やＳｔｏ、等
の絶縁膜が形成されており同図では簡略化のため省略さ
れている。Now, to explain the case of exposure using this X-ray source with good directivity, as shown in Figure Wc4, the distance between the mask 12 and the semiconductor wafer 11 is several meters apart due to the good directivity of the X-ray 150. However, the accuracy of the transferred figure does not deteriorate much,
Therefore, the mask 12 and the wafer 11 each have an independent optical system in the visible range that allows the input and output of the incident light 19.18 and the reflected light, and the detection means 20 detects the original figure signal (position signal) that corresponds to each pattern figure. It becomes possible to detect this, control the positional relationship between the wafer and the mask, and perform accurate alignment. In addition, in the figure, 17 is gold (Au), for example.
), 14 indicates a mirror, and 16 indicates a half mirror. Furthermore, insulating films such as a semiconductor diffusion region and Sto are formed in advance inside and on the surface of the semiconductor wafer 11, which is the object to be exposed, and are omitted in the figure for the sake of simplification.
上記の如き本発明の一実施例に係る露光方法ではマスク
１２の基体はあえて光学的忙（可視光領域で）透明では
なく、例えば炭素（カーボン）の如く、光学的に不透明
でもＸ線に対し透過率の良い材料で構成すればマスク上
のパターン図形を高精度でウェハ上に転写することがで
きる。したがって、炭素以外にもベリリウム又はそれら
の化合物を基材とするマスクも使用することができる。In the exposure method according to the embodiment of the present invention as described above, the base of the mask 12 is intentionally not optically transparent (in the visible light range), but is made of carbon, for example, which is resistant to X-rays even if it is optically opaque. If it is made of a material with good transmittance, the pattern on the mask can be transferred onto the wafer with high precision. Therefore, in addition to carbon, masks based on beryllium or compounds thereof can also be used.
次に、第５図をもとに本発明の一実施例に用いる具体的
な露光装置およびマスクの一例を説明する。Next, an example of a specific exposure apparatus and mask used in an embodiment of the present invention will be explained based on FIG.
Ｗｃ５図は本発明の一実施例に用いる露光装置を示す模
式図であり、シリコンウニノ・２１と炭素（カーボン）
基板で作られたマスク２２とは約１０ｕ程度の間隔をお
いて平行に固定され、両者の位置合せ又は目合わせは、
光源３１からの光（可視光）３２をハーフミラ−３３に
よって二分して上記ウェハ２１およびマスク２２上にそ
れぞれ独立して入射せしめて得られる二つの反射光３４
および３５をミラー２４および２６によって一つの光軸
３８上に合成し、適宜の光学系３９を介して上記ウェハ
２１およびマスク２２のパターンの一致を検知手段（例
えば目）３０によって観測することによってなされる。Figure Wc5 is a schematic diagram showing an exposure apparatus used in an embodiment of the present invention, and is a schematic diagram showing an exposure apparatus used in an embodiment of the present invention.
The mask 22 made of a substrate is fixed in parallel with an interval of about 10 u, and the alignment or alignment of the two is as follows.
Two reflected lights 34 are obtained by dividing the light (visible light) 32 from the light source 31 into two by a half mirror 33 and making them independently incident on the wafer 21 and mask 22.
and 35 are combined onto one optical axis 38 by mirrors 24 and 26, and the matching of the patterns of the wafer 21 and mask 22 is observed by a detection means (for example, the eye) 30 through an appropriate optical system 39. Ru.
露光はシンクロトロン２３から放射される指向性の高い
Ｘ１ｌｉ１５ｉ２５によってなされる。ここで、シンク
ロトロン２３においては、加速された電子の回連軌道の
接線方向にψおよびθの角度で拡がるＸ線２５が発生す
るが、上記ψは１０ミリラジアン、θは１ミリラジアン
程度であり、その指向性は極めて高く、前記ウェハ２１
とマスク２２との間隔を１０〜数１０ｍ程度に広ケテモ
マスクパターン２７のウェハ上への投影精度はほとんど
劣化することがない。Exposure is performed by highly directional X1li15i25 emitted from the synchrotron 23. Here, in the synchrotron 23, an X-ray 25 is generated that spreads at an angle of ψ and θ in the tangential direction of the recirculating orbit of the accelerated electron, but the above-mentioned ψ is about 10 milliradian, and θ is about 1 milliradian, Its directivity is extremely high, and the wafer 21
When the distance between the mask 22 and the mask 22 is set to about 10 to several tens of meters, the accuracy of projection of the wide mask pattern 27 onto the wafer hardly deteriorates.
以上述べた如く本発明の一実施例によれば、マスク基体
材料に可視光に対し不透明であるが軟Ｘ線に対して透過
性の良い材料を用いることで位置合せ、露光等の精度及
び操作性なども改善される。As described above, according to one embodiment of the present invention, by using a material that is opaque to visible light but highly transparent to soft X-rays for the mask base material, accuracy of alignment, exposure, etc. can be improved. Sexuality is also improved.
第１図及び第２図は従来のＸ線露光方法を説明するため
の模式図、第３図は本発明に係る一実施例のマスクを利
用するＸ線露光方法忙使用されるシンクロトロンによる
Ｘ線発生装置の模式図、第４図は本発明忙係る一実施例
のマスクを利用するＸ線露光方法を説明するだめの模式
図、第５図は本発明の一実施例のマスクを用いたＸ線露
光装置の構成図である。
１．１１．２１・・・半導体ウェハ、２．１２゜２２・
・・マスク、９．３１・・・光源、８．１４，１６゜２
４．２６，３３．３６・・・ミラー、１０，２０゜３０
・・・パターン信号検出手段、３９・・・光学系。
２３・・・シンクロトロン。
第 １ 図 第 ２ 図第
３ 図
第 ４ 図
第 ５ 図1 and 2 are schematic diagrams for explaining a conventional X-ray exposure method, and FIG. 3 is an X-ray exposure method using a mask according to an embodiment of the present invention. FIG. 4 is a schematic diagram of a radiation generating device, FIG. 4 is a schematic diagram for explaining an X-ray exposure method using a mask of an embodiment of the present invention, and FIG. 5 is a schematic diagram of a mask of an embodiment of the present invention. FIG. 1 is a configuration diagram of an X-ray exposure apparatus. 1.11.21...Semiconductor wafer, 2.12°22.
・・Mask, 9.31 ・・Light source, 8.14, 16°2
4.26, 33.36...Mirror, 10, 20°30
...Pattern signal detection means, 39...Optical system. 23... Synchrotron. Figure 1 Figure 2 Figure 2
3 Figure 4 Figure 5
Claims (1)
光装置において、上記板状物の基体を光学的に不透明で
かつＸ線を透過する材料で構成してなることを特徴とす
るＸ線露光用板状物。 ２、上記板状物の基体を炭素、ベリリウム、又はそれら
の化合物で構成してなることを特徴とする特許請求の範
囲第１項記載のＸ線露光用板状物。[Scope of Claims] 1. In an X-ray exposure device that transfers a figure drawn on a plate-like object onto an exposed object, the base of the plate-like object is made of an optically opaque material that transmits X-rays. A plate-like object for X-ray exposure, characterized in that: 2. A plate for X-ray exposure according to claim 1, wherein the base of the plate is made of carbon, beryllium, or a compound thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60215086A JPS61111536A (en) | 1985-09-30 | 1985-09-30 | X-ray exposure planar substance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60215086A JPS61111536A (en) | 1985-09-30 | 1985-09-30 | X-ray exposure planar substance |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1977079A Division JPS55113330A (en) | 1979-02-23 | 1979-02-23 | X-ray exposure system and device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61111536A true JPS61111536A (en) | 1986-05-29 |
Family
ID=16666517
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60215086A Pending JPS61111536A (en) | 1985-09-30 | 1985-09-30 | X-ray exposure planar substance |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61111536A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8834142B2 (en) | 2007-10-30 | 2014-09-16 | Toyo Engineering Corporation | Fluidized bed granulator |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4979176A (en) * | 1972-12-04 | 1974-07-31 |
-
1985
- 1985-09-30 JP JP60215086A patent/JPS61111536A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4979176A (en) * | 1972-12-04 | 1974-07-31 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8834142B2 (en) | 2007-10-30 | 2014-09-16 | Toyo Engineering Corporation | Fluidized bed granulator |
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