JP2003124093A - Gap adjusting apparatus and method therefor - Google Patents
Gap adjusting apparatus and method thereforInfo
- Publication number
- JP2003124093A JP2003124093A JP2001312624A JP2001312624A JP2003124093A JP 2003124093 A JP2003124093 A JP 2003124093A JP 2001312624 A JP2001312624 A JP 2001312624A JP 2001312624 A JP2001312624 A JP 2001312624A JP 2003124093 A JP2003124093 A JP 2003124093A
- Authority
- JP
- Japan
- Prior art keywords
- measured
- distance
- displacement meter
- displacement
- dummy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ギャップ調節装置
及びギャップ調節方法に関し、特に電子ビーム近接露光
用のマスクとウエハとの間隔を調節するのに適したギャ
ップ調節装置及びギャップ調節方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gap adjusting device and a gap adjusting method, and more particularly to a gap adjusting device and a gap adjusting method suitable for adjusting a distance between a mask for electron beam proximity exposure and a wafer.
【０００２】[0002]
【従来の技術】Ｘ線露光や電子ビーム近接露光では、露
光すべきウエハ表面上に、微少な間隙を隔ててマスクを
配置し、マスクを通してウエハ表面を露光する。解像度
及び位置合わせ精度を高めるために、ウエハとマスクと
のギャップを精密に制御しなければならない。特に、ギ
ャップが開きすぎると、半影ぼけにより解像度が低下す
るとともに、位置合わせ精度も低下する。2. Description of the Related Art In X-ray exposure and electron beam proximity exposure, a mask is arranged on the surface of a wafer to be exposed with a minute gap, and the wafer surface is exposed through the mask. In order to improve the resolution and the alignment accuracy, the gap between the wafer and the mask must be precisely controlled. In particular, if the gap is too wide, the penumbra blur reduces the resolution and the alignment accuracy.
【０００３】ウエハとマスクとのギャップを測定する方
法として、高分解能カメラを使用した画像処理を利用す
る方法や、高分解能カメラと他の変位センサとを組み合
わせて使用する方法が知られている。As a method for measuring the gap between the wafer and the mask, there are known a method of utilizing image processing using a high resolution camera and a method of using a combination of the high resolution camera and another displacement sensor.
【０００４】[0004]
【発明が解決しようとする課題】高分解能カメラは高価
であるし、大きな設置スペースを必要とする。このた
め、露光装置の小型化及び低価格化が困難になる。High resolution cameras are expensive and require a large installation space. Therefore, it is difficult to reduce the size and cost of the exposure apparatus.
【０００５】本発明の目的は、小型化及び低価格化を図
ることが可能なギャップ調節装置を提供することであ
る。An object of the present invention is to provide a gap adjusting device which can be downsized and reduced in cost.
【０００６】本発明の他の目的は、上記のギャップ調節
装置を用いたギャップ調節方法を提供することである。Another object of the present invention is to provide a gap adjusting method using the above gap adjusting device.
【０００７】[0007]
【課題を解決するための手段】本発明の一観点による
と、第１の被測定面を有する第1の対象物を保持する第1
の保持手段と、第２の被測定面を有する第２の対象物
を、該第２の被測定面が前記第１の被測定面に対向する
ように保持する第２の保持手段と、前記第１の被測定面
までの距離を測定する第１の変位計と、前記第１の変位
計に対する相対的位置が固定され、前記第２の被測定面
と同一方向を向くダミー被測定面を有するダミーターゲ
ットと、前記第２の被測定面及び前記ダミー被測定面の
各々までの距離を測定する第２の変位計と、前記第１の
被測定面と第２の被測定面との間隔が変化するように、
前記第１の保持手段及び第２の保持手段の少なくとも一
方を移動させる移動機構とを有するギャップ調節装置が
提供される。According to one aspect of the present invention, a first object for holding a first object having a first measured surface is provided.
Holding means, second holding means for holding a second object having a second measured surface so that the second measured surface faces the first measured surface, and A first displacement gauge for measuring the distance to the first measured surface and a dummy measured surface whose relative position with respect to the first displacement meter is fixed and which faces the same direction as the second measured surface. A dummy target that is provided, a second displacement meter that measures a distance to each of the second measured surface and the dummy measured surface, and a gap between the first measured surface and the second measured surface So that
There is provided a gap adjusting device having a moving mechanism that moves at least one of the first holding means and the second holding means.
【０００８】第１の変位計からダミー被測定面までの距
離は、予め測定しておくことができる。第２の変位計か
らダミー被測定面までの距離を測定することにより、第
１の変位計と第２の変位計との間の距離が求まる。第１
の変位計から第１の被測定面までの距離、及び第２の変
位計から第２の被測定面までの距離、及び第１の変位計
と第２の変位計との間の距離から、第１の被測定面と第
２の被測定面との間隔を求めることができる。The distance from the first displacement gauge to the dummy measured surface can be measured in advance. By measuring the distance from the second displacement meter to the dummy measured surface, the distance between the first displacement meter and the second displacement meter can be obtained. First
From the displacement meter to the first measured surface, and the distance from the second displacement meter to the second measured surface, and the distance between the first displacement meter and the second displacement meter, The distance between the first measured surface and the second measured surface can be obtained.
【０００９】本発明の他の観点によると、第１の被測定
面を有する第1の対象物と、第２の被測定面を有する第
２の対象物とを、該第２の被測定面が前記第１の被測定
面に対向するように保持する工程と、第１の変位計で、
該第１の変位計から前記第１の被測定面までの距離ＤD
を測定する工程と、第２の変位計で、該第２の変位計か
ら前記第２の被測定面までの距離ＤAを測定する工程
と、前記第２の変位計で、該第２の変位計から、前記第
１の変位計に対する相対的位置が固定されたダミー被測
定面までの距離ＤBを測定する工程と、該第１の変位計
から該ダミー被測定面までの距離ＤC、及び前記距離
ＤD、ＤA、及びＤBから、ＤA＋ＤD−（ＤB＋ＤC）を計
算し、前記第１の被測定面と第２の被測定面との間隔を
求める工程とを有するギャップ調節方法が提供される。According to another aspect of the present invention, a first object having a first measured surface and a second object having a second measured surface are provided on the second measured surface. Is held so as to face the first surface to be measured, and the first displacement meter,
Distance D D from the first displacement gauge to the first measured surface
Measuring the distance D A from the second displacement gauge to the second surface to be measured with a second displacement gauge, and the second displacement gauge with the second displacement gauge. Measuring the distance D B from the displacement meter to the dummy measured surface whose relative position to the first displacement meter is fixed; and the distance D C from the first displacement meter to the dummy measured surface. , and the distance D D, from D a and D B, D a + D D - (D B + D C) was calculated, obtaining a distance between the first surface to be measured and the second surface to be measured There is provided a gap adjustment method having:
【００１０】[0010]
【発明の実施の形態】図１に、本発明の実施例によるギ
ャップ調節装置を適用した電子ビーム近接露光装置１０
の概略図を示す。1 is a block diagram of an electron beam proximity exposure apparatus 10 to which a gap adjusting apparatus according to an embodiment of the present invention is applied.
The schematic diagram of is shown.
【００１１】電子ビーム近接露光装置１０は、電子銃１
２、ビーム走査装置２０、及びギャップ調節装置３０を
含んで構成される。電子銃１２は、電子ビーム源１４、
静電レンズ１６、アパーチャ１８を含む。電子ビーム源
１４が、電子ビームを出射する。静電レンズ１６が、電
子ビーム源１４から出射された電子ビームを平行ビーム
１５に変換する。平行ビーム１５がアパーチャ１８で整
形され、ビーム走査装置２０に入射する。The electron beam proximity exposure apparatus 10 includes an electron gun 1
2, a beam scanning device 20, and a gap adjusting device 30. The electron gun 12 includes an electron beam source 14,
It includes an electrostatic lens 16 and an aperture 18. The electron beam source 14 emits an electron beam. The electrostatic lens 16 converts the electron beam emitted from the electron beam source 14 into a parallel beam 15. The parallel beam 15 is shaped by the aperture 18 and is incident on the beam scanning device 20.
【００１２】ビーム走査装置２０は、主偏向器２２、２
４、及び副偏向器２６、２８を含む。ビーム走査装置２
０は、電子ビームを走査する。The beam scanning device 20 includes main deflectors 22 and 2.
4 and sub-deflectors 26, 28. Beam scanning device 2
0 scans the electron beam.
【００１３】ギャップ調節装置３０が、走査された電子
ビームの入射する位置に、マスク３１を保持する。微小
間隙（プロキシミティギャップ）を介してマスク３１に
対向するように、ウエハ４０が配置されている。ウエハ
４０の、マスク３１に対向する面上に、電子ビーム露光
用レジスト膜４２が塗布されている。マスク３１を透過
した電子ビームがレジスト膜４２に入射し、レジスト膜
４２にマスク３１のパターンが転写される。The gap adjusting device 30 holds the mask 31 at the position where the scanned electron beam is incident. The wafer 40 is arranged so as to face the mask 31 via a minute gap (proximity gap). A resist film 42 for electron beam exposure is coated on the surface of the wafer 40 facing the mask 31. The electron beam transmitted through the mask 31 enters the resist film 42, and the pattern of the mask 31 is transferred to the resist film 42.
【００１４】図２（Ａ）に、本発明の実施例によるギャ
ップ調節装置３０の概略図を示す。ウエハステージ５１
が、ＸＹ駆動機構５０によりＸＹ面に平行な２次元方向
に移動可能に保持されている。ウエハチャック５３が、
３個のＺ軸方向駆動機構５２を介してウエハステージ５
１に取り付けられている。Ｚ軸方向駆動機構５２は、ウ
エハチャック５３を、ＸＹ面に垂直なＺ軸方向に移動さ
せることができる。また、Ｚ軸駆動機構５２は、それぞ
れの駆動量を異ならせることにより、ＸＹ面に対するウ
エハチャック５３の傾き角を調節することができる。ウ
エハチャック５３は、静電チャック機構により、ウエハ
４０を保持する。ＸＹ駆動機構５０及びＺ軸駆動機構５
２は、制御装置７０からの指令に基づいて動作する。FIG. 2A is a schematic view of the gap adjusting device 30 according to the embodiment of the present invention. Wafer stage 51
Is held by the XY drive mechanism 50 so as to be movable in a two-dimensional direction parallel to the XY plane. The wafer chuck 53
Wafer stage 5 via three Z-axis direction drive mechanisms 52
It is attached to 1. The Z-axis drive mechanism 52 can move the wafer chuck 53 in the Z-axis direction perpendicular to the XY plane. Further, the Z-axis drive mechanism 52 can adjust the tilt angle of the wafer chuck 53 with respect to the XY plane by changing the respective drive amounts. The wafer chuck 53 holds the wafer 40 by an electrostatic chuck mechanism. XY drive mechanism 50 and Z-axis drive mechanism 5
2 operates based on a command from the control device 70.
【００１５】マスクチャック６０が、静電チャック機構
により、マスク３１を保持する。マスクチャック６０に
保持されたマスク３１は、ウエハチャック５３に保持さ
れたウエハ４０に、微小間隙を隔てて対向する。ウエハ
４０及びマスク３１の、相互に対向する面を、それぞれ
被測定面４０ａ及び被測定面３１ａと呼ぶこととする。
被測定面３１ａ及び４０ａの各々の少なくとも一部の領
域は導電性材料で形成されており、この導電性の領域は
接地電位に接続されている。なお、ウエハ４０の被測定
面４０ａの上には、電子ビーム露光用レジスト膜が形成
されている。The mask chuck 60 holds the mask 31 by an electrostatic chuck mechanism. The mask 31 held by the mask chuck 60 faces the wafer 40 held by the wafer chuck 53 with a minute gap. The surfaces of the wafer 40 and the mask 31 that face each other are referred to as a measured surface 40a and a measured surface 31a, respectively.
At least a part of each of the measured surfaces 31a and 40a is made of a conductive material, and the conductive area is connected to the ground potential. A resist film for electron beam exposure is formed on the measured surface 40a of the wafer 40.
【００１６】マスクチャック６０は、３つのＺ軸駆動機
構６２を介してマスクステージ６１に取り付けられてい
る。Ｚ軸駆動機構６２は、マスクチャック６０をＺ軸方
向に移動させることができる。また、Ｚ軸駆動機構６２
は、それぞれの駆動量を異ならせることにより、ＸＹ面
に対するマスクチャック６０の傾き角を調節することが
できる。Ｚ軸駆動機構６２は、制御装置７０からの指令
に基づいて動作する。The mask chuck 60 is attached to the mask stage 61 via three Z-axis drive mechanisms 62. The Z-axis drive mechanism 62 can move the mask chuck 60 in the Z-axis direction. In addition, the Z-axis drive mechanism 62
Can adjust the tilt angle of the mask chuck 60 with respect to the XY plane by varying the respective driving amounts. The Z-axis drive mechanism 62 operates based on a command from the control device 70.
【００１７】ウエハステージ５１に、マスク用の静電容
量型変位計５５が取り付けられている。静電容量型変位
計５５は、マスク３１に対向する。マスクステージ６１
に、ウエハ用の静電容量型変位計６５、及びダミーター
ゲット６６が取り付けられている。ダミーターゲット６
６は、マスク３１の被測定面３１ａと同一の方向を向く
ダミー被測定面６６ａを有する。ダミー被測定面６６ａ
は、導電性の材料で形成されており、接地電位に接続さ
れている。静電容量型変位計６５からダミー被測定面６
６ａまでのＺ軸方向の距離ＤCが、予めレーザ変位計等
により正確に測定されている。ダミーターゲット６６
は、静電容量型変位計６５に対して相対的位置が固定さ
れている。このため、装置が一旦設置された後は、距離
ＤCは不変である。A capacitance type displacement gauge 55 for a mask is attached to the wafer stage 51. The capacitance type displacement meter 55 faces the mask 31. Mask stage 61
A wafer electrostatic capacitance type displacement meter 65 and a dummy target 66 are attached to the. Dummy target 6
6 has a dummy measured surface 66a facing the same direction as the measured surface 31a of the mask 31. Dummy measured surface 66a
Is formed of a conductive material and is connected to the ground potential. From the capacitance type displacement meter 65 to the dummy measured surface 6
The distance D C in the Z-axis direction up to 6a is accurately measured in advance by a laser displacement meter or the like. Dummy target 66
Has a fixed relative position with respect to the capacitance type displacement meter 65. Therefore, the distance D C remains unchanged once the device is installed.
【００１８】図２（Ｂ）にマスク３１の正面図を示す。
アルミニウム製の円環状の枠３２が、シリコンで形成さ
れた支持板３３を物理的に支持している。支持板３３の
中心部に、転写すべきパターンが形成された正方形のメ
ンブレン３４が保持されている。支持板３３の表面が、
マスク３１の被測定面３１ａを画定する。通常、メンブ
レン３４の一辺の長さは４０〜５０ｍｍ、支持板３３の
外径は１２５ｍｍである。支持板３３のうち、メンブレ
ン３４を取り囲む幅約１０ｍｍの円環状領域３３ａが、
静電容量型変位計によって変位量を検出可能な領域であ
る。FIG. 2B shows a front view of the mask 31.
An annular frame 32 made of aluminum physically supports a support plate 33 made of silicon. A square membrane 34 having a pattern to be transferred is held at the center of the support plate 33. The surface of the support plate 33 is
The measurement surface 31a of the mask 31 is defined. Usually, the length of one side of the membrane 34 is 40 to 50 mm, and the outer diameter of the support plate 33 is 125 mm. Of the support plate 33, an annular region 33a having a width of about 10 mm surrounding the membrane 34 is
This is a region where the displacement amount can be detected by a capacitance type displacement meter.
【００１９】ＸＹ駆動機構５０を駆動して、静電容量型
変位計５５を円環状領域３３ａのいずれかの部分の正面
に配置させることにより、静電容量型変位計５５の基準
面を変位量の原点としたときの、マスク３１の変位量を
測定することができる。静電容量型変位計５５から、そ
の基準面までの距離は、予め決定されている。このた
め、被測定面３１ａの変位量を測定することは、静電容
量型変位計５５から被測定面３１ａまでの距離ＤAを測
定することと等価である。本明細書において、静電容量
型変位計によって、その基準面からの変位量を測定する
手順を、「静電容量型変位計からの距離を測定する」と
表現する。By driving the XY drive mechanism 50 and disposing the capacitance type displacement gauge 55 in front of any part of the annular region 33a, the reference plane of the capacitance type displacement gauge 55 is displaced. It is possible to measure the displacement amount of the mask 31 at the origin of the. The distance from the capacitance type displacement meter 55 to the reference plane is predetermined. Therefore, measuring the amount of displacement of the measured surface 31a is equivalent to measuring the distance D A from the capacitance type displacement meter 55 to the measured surface 31a. In this specification, the procedure of measuring the amount of displacement from the reference surface by the capacitance displacement meter is referred to as “measuring the distance from the capacitance displacement meter”.
【００２０】ＸＹ駆動機構５０を駆動して、静電容量型
変位計５５をダミーターゲット６６の正面に配置させる
ことにより、静電容量型変位計５５からダミー被測定面
６６ａまでの距離ＤBを測定することができる。ＸＹ駆
動機構５０を駆動して、静電容量型変位計６５がウエハ
４０の正面に位置するように、ウエハチャック５３を配
置させることにより、静電容量型変位計６５からウエハ
４０の被測定面４０ａまでの距離ＤDを測定することが
できる。静電容量型変位計５５及び６５の測定結果が、
制御装置７０に入力される。By driving the XY drive mechanism 50 and disposing the capacitance type displacement meter 55 in front of the dummy target 66, the distance D B from the capacitance type displacement meter 55 to the dummy measured surface 66a is determined. Can be measured. By driving the XY drive mechanism 50 and disposing the wafer chuck 53 so that the capacitance type displacement meter 65 is located in front of the wafer 40, the capacitance type displacement meter 65 can measure the surface to be measured of the wafer 40. The distance D D to 40a can be measured. The measurement results of the capacitance type displacement meters 55 and 65 are
It is input to the control device 70.
【００２１】静電容量型変位計の測定可能距離は、一般
に０．５ｍｍ程度以上である。また、マスク３１のうち
静電容量変位計５５のターゲットとなり得る領域３３ａ
の幅が１０ｍｍ程度であるとき、静電容量型変位計５５
で測定可能な距離は、例えば１．５ｍｍ程度以下であ
る。このため、一例として、距離ＤA及びＤDを１ｍｍ程
度とし、距離ＤBを１．３ｍｍ程度とする。The measurable distance of the capacitance type displacement meter is generally about 0.5 mm or more. A region 33a of the mask 31 that can be a target of the capacitance displacement meter 55.
When the width of each is about 10 mm, the capacitance type displacement meter 55
The measurable distance is, for example, about 1.5 mm or less. Therefore, as an example, the distances D A and D D are set to about 1 mm, and the distance D B is set to about 1.3 mm.
【００２２】次に、図２（Ａ）に示したギャップ調節装
置を用いて、マスク３１とウエハ４０との間隔を調節す
る方法を説明する。Next, a method of adjusting the distance between the mask 31 and the wafer 40 using the gap adjusting device shown in FIG. 2A will be described.
【００２３】まず、静電容量型変位計５５から、マスク
３１の被測定面３１ａ上の少なくとも３点の各々までの
距離を測定する。測定結果に基づいて、マスク３１の被
測定面３１ａがＸＹ面に平行になるように、Ｚ軸駆動機
構６２を動作させる。被測定面３１ａをＸＹ面に平行に
した後、距離ＤAを測定する。さらに、距離ＤBを測定す
る。First, the distance from the capacitance type displacement meter 55 to each of at least three points on the measured surface 31a of the mask 31 is measured. Based on the measurement result, the Z-axis drive mechanism 62 is operated so that the measured surface 31a of the mask 31 is parallel to the XY plane. After making the measured surface 31a parallel to the XY plane, the distance D A is measured. Further, the distance D B is measured.
【００２４】次に、静電容量型変位計６５から、ウエハ
４０の被測定面４０ａ上の少なくとも３点の各々までの
距離を測定する。測定結果に基づいて、ウエハ４０の被
測定面４０ａがＸＹ面に平行になるように、Ｚ軸駆動機
構５２を動作させる。被測定面４０ａをＸＹ面に平行に
した後、距離ＤDを測定する。Next, the distance from the capacitance type displacement meter 65 to each of at least three points on the measured surface 40a of the wafer 40 is measured. Based on the measurement result, the Z-axis drive mechanism 52 is operated so that the measured surface 40a of the wafer 40 is parallel to the XY plane. After making the measured surface 40a parallel to the XY plane, the distance D D is measured.
【００２５】マスク３１とウエハ４０との間隔Ｇは、The distance G between the mask 31 and the wafer 40 is
【００２６】[0026]
【数１】Ｇ＝ＤA＋ＤD−（ＤB＋ＤC） ・・・（１）
と表される。間隔Ｇが所望の値になるように、Ｚ軸駆動
機構５２またはＺ軸駆動機構６２を動作させる。このよ
うにして、間隔Ｇを調節することができる。## EQU1 ## G = D A + D D − (D B + D C ) ... (1) The Z-axis drive mechanism 52 or the Z-axis drive mechanism 62 is operated so that the gap G has a desired value. In this way, the gap G can be adjusted.
【００２７】距離ＤBは、理想的には、一回測定すれば
その後は変動しない。このため、マスク３１やウエハ４
０を交換する度に測定し直す必要はない。ただし、時間
の経過とともに距離ＤBが変動し得るため、定期的に距
離ＤBを測定して、新しい値に更新することが好まし
い。Ideally, the distance D B does not change after one measurement. Therefore, the mask 31 and the wafer 4
It is not necessary to remeasure every time 0 is exchanged. However, since the distance D B may change with the passage of time, it is preferable to measure the distance D B regularly and update it to a new value.
【００２８】上記実施例では、変位計として静電容量型
変位計のみを使用している。静電容量型変位計は、距離
を測定していない期間には磁場を発生しないため、電子
ビームの進行方向に影響を及ぼさない。また、静電容量
型変位計は、レーザ変位計等に比べて構造が単純であ
り、脱ガスの原因になるプリント基板等を含まない。こ
のため、実施例によるギャップ調節装置は、電子ビーム
近接露光装置に適用される場合のように、真空中での使
用に適している。また、実施例によるギャップ調節装置
は、高価な高倍率カメラ等を使用しないため、装置全体
の低価格化を図ることができる。In the above embodiment, only the capacitance type displacement gauge is used as the displacement gauge. The capacitance displacement meter does not generate a magnetic field during a period in which the distance is not measured, and therefore does not affect the traveling direction of the electron beam. Further, the capacitance type displacement meter has a simpler structure than a laser displacement meter or the like and does not include a printed circuit board or the like that causes degassing. Therefore, the gap adjusting apparatus according to the embodiment is suitable for use in a vacuum, as in the case of being applied to an electron beam proximity exposure apparatus. Further, since the gap adjusting device according to the embodiment does not use an expensive high-magnification camera or the like, the cost of the entire device can be reduced.
【００２９】静電容量型変位計６５とウエハ４０との間
隔ＤD、及び静電容量型変位計５５とマスク３１との間
隔ＤAは、静電容量型変位計の特性から、１ｍｍ程度と
することが好ましい。ウエハ４０とマスク３１との間隔
Ｇは、一般的に５０μｍ程度である。このため、静電容
量型変位計５５と６５との間隔ＤB＋ＤCが２ｍｍ程度に
なり、静電容量型変位計の距離測定可能範囲から外れて
しまう。このため、式（１）の右辺のＤB＋ＤCを直接測
定することができない。The spacing D A of the distance D D, and the electrostatic capacitance type displacement gauge 55 and the mask 31 with the electrostatic capacitance type displacement meter 65 and the wafer 40, the characteristics of the electrostatic capacitance type displacement meter, and about 1mm Preferably. The gap G between the wafer 40 and the mask 31 is generally about 50 μm. For this reason, the distance D B + D C between the capacitance type displacement gauges 55 and 65 is about 2 mm, which is outside the distance measurable range of the capacitance type displacement gauge. Therefore, D B + D C on the right side of the equation (1) cannot be directly measured.
【００３０】上記実施例の場合には、ダミーターゲット
６６のダミー被測定面６６ａを、静電容量型変位計５５
の距離測定可能範囲内に配置することにより、２つの静
電容量型変位計５５と６５との間隔ＤB＋ＤCが求められ
る。In the case of the above-described embodiment, the dummy measured surface 66a of the dummy target 66 is connected to the capacitance type displacement meter 55.
The distance D B + D C between the two capacitance type displacement gauges 55 and 65 is obtained by arranging within the distance measurable range.
【００３１】上記実施例では、変位計として静電容量型
変位計を使用したが、光ファイバ型変位計を用いてもよ
い。光ファイバ型変位計は、光ファイバ端面から出射し
た光を、距離を測定する対象物に入射させ、そこからの
反射光を受光し、受光量に基づいて距離を求める。光フ
ァイバ型変位計を用いる場合には、必ずしもダミーター
ゲット６６を配置する必要はない。In the above embodiment, the capacitance type displacement gauge was used as the displacement gauge, but an optical fiber type displacement gauge may be used. The optical fiber displacement meter causes light emitted from the end face of the optical fiber to enter an object whose distance is to be measured, receives reflected light from the object, and obtains the distance based on the amount of received light. When using the optical fiber displacement meter, it is not always necessary to dispose the dummy target 66.
【００３２】ダミーターゲット６６を配置しない場合に
は、図２（Ａ）に示した変位計５５と６５との間隔ＤB
＋ＤCが直接測定される。直接測定された変位計５５と
６５との間隔をＤEとすると、間隔Ｇは、When the dummy target 66 is not arranged, the distance D B between the displacement gauges 55 and 65 shown in FIG.
+ D C is measured directly. If the distance between the displacement meters 55 and 65 directly measured is D E , the distance G is
【００３３】[0033]
【数２】Ｇ＝ＤA＋ＤD−ＤE ・・・（２） と表される。## EQU2 ## G = D A + D D −D E (2)
【００３４】以上実施例に沿って本発明を説明したが、
本発明はこれらに制限されるものではない。例えば、種
々の変更、改良、組み合わせ等が可能なことは当業者に
自明であろう。The present invention has been described above with reference to the embodiments.
The present invention is not limited to these. For example, it will be apparent to those skilled in the art that various modifications, improvements, combinations, and the like can be made.
【００３５】[0035]
【発明の効果】以上説明したように、本発明によれば、
電子ビームの進行に影響を与えるような磁場を発生する
ことなく、２つの対象物の間隔を測定することができ
る。As described above, according to the present invention,
It is possible to measure the distance between two objects without generating a magnetic field that affects the progress of the electron beam.
【図１】本発明の実施例によるギャップ調節装置を使用
した電子ビーム近接露光装置の概略図である。FIG. 1 is a schematic view of an electron beam proximity exposure apparatus using a gap adjusting device according to an embodiment of the present invention.
【図２】本発明の実施例によるギャップ調節装置の概略
図、及びマスクの正面図である。FIG. 2 is a schematic view of a gap adjusting device and a front view of a mask according to an embodiment of the present invention.
１０ 電子ビーム近接露光装置 １２ 電子銃 １４ 電子ビーム源 １５ 電子ビーム １６ 静電レンズ １８ アパーチャ ２０ 電子ビーム走査装置 ２２、２４ 主偏向器 ２６、２８ 副偏向器 ３０ ギャップ調節装置 ３１ マスク ３２ 枠 ３３ 支持板 ３４ メンブレン ４０ ウエハ ４２ レジスト膜 ５０ ＸＹ駆動機構 ５１ ウエハステージ ５２、６２ Ｚ軸駆動機構 ５３ ウエハチャック ５５、６５ 静電容量型変位計 ６０ マスクチャック ６１ マスクステージ ６６ ダミーターゲット ７０ 制御装置 10 Electron beam proximity exposure system 12 electron gun 14 Electron beam source 15 electron beam 16 Electrostatic lens 18 Aperture 20 Electron beam scanning device 22, 24 Main deflector 26, 28 Sub deflector 30 Gap adjuster 31 mask 32 frames 33 Support plate 34 Membrane 40 wafers 42 resist film 50 XY drive mechanism 51 Wafer stage 52, 62 Z-axis drive mechanism 53 Wafer chuck 55, 65 Capacitance type displacement meter 60 mask chuck 61 mask stage 66 dummy target 70 Control device
Claims (12)
保持する第1の保持手段と、 第２の被測定面を有する第２の対象物を、該第２の被測
定面が前記第１の被測定面に対向するように保持する第
２の保持手段と、 前記第１の被測定面までの距離を測定する第１の変位計
と、 前記第１の変位計に対する相対的位置が固定され、前記
第２の被測定面と同一方向を向くダミー被測定面を有す
るダミーターゲットと、 前記第２の被測定面及び前記ダミー被測定面の各々まで
の距離を測定する第２の変位計と、 前記第１の被測定面と第２の被測定面との間隔が変化す
るように、前記第１の保持手段及び第２の保持手段の少
なくとも一方を移動させる移動機構とを有するギャップ
調節装置。1. A first holding means for holding a first object having a first surface to be measured, and a second object having a second surface to be measured, the second object to be measured. A second holding unit that holds the first measured surface so as to face the first measured surface, a first displacement meter that measures a distance to the first measured surface, and a relative to the first displacement meter. A dummy target whose target position is fixed and which has a dummy measured surface facing the same direction as the second measured surface; and a distance to each of the second measured surface and the dummy measured surface. And a moving mechanism that moves at least one of the first holding means and the second holding means so that the distance between the first measured surface and the second measured surface changes. A gap adjusting device having.
の変位量検出範囲外に配置されており、前記第２の変位
計は、前記第１の変位計の変位量検出範囲外に配置され
ている請求項１に記載のギャップ調節装置。2. The first displacement gauge is arranged outside a displacement amount detection range of the second displacement gauge, and the second displacement gauge is arranged in a displacement amount detection range of the first displacement gauge. The gap adjusting device according to claim 1, wherein the gap adjusting device is arranged outside.
静電容量型変位計である請求項１または２に記載のギャ
ップ調節装置。3. The first displacement gauge and the second displacement gauge,
The gap adjusting device according to claim 1, which is a capacitance type displacement meter.
ＤA、前記第２の変位計から前記ダミー被測定面までの
距離をＤB、前記第１の変位計から前記ダミー被測定面
までの距離をＤC、前記第１の変位計から前記第１の被
測定面までの距離をＤDとしたとき、ＤA＋ＤD−（ＤB＋
ＤC）を計算し、計算結果に基づいて前記移動機構を駆
動する制御手段を有する請求項１〜３のいずれかに記載
のギャップ調節装置。4. The distance from the second displacement meter to the second measured surface is D A , the distance from the second displacement meter to the dummy measured surface is D B , and the first measured surface is D B. D C a distance to the dummy measurement surface from the displacement meter, and the distance from the first displacement gauge to said first surface to be measured was D D, D a + D D - (D B +
4. The gap adjusting device according to claim 1, further comprising control means for calculating D C ) and driving the moving mechanism based on the calculation result.
方が、電子ビーム近接露光に用いられるマスクであり、
他方が露光されるべきウエハであり、さらに、 電子ビームを出射する電子銃と、 前記電子銃から出射された電子ビームが、前記マスクを
通して前記ウエハに照射されるように、電子ビームを進
行させる電子ビーム制御手段とを有する請求項１〜４の
いずれかに記載のギャップ調節装置。5. One of the first object and the second object is a mask used for electron beam proximity exposure,
The other is a wafer to be exposed, and further, an electron gun that emits an electron beam, and an electron that advances the electron beam so that the electron beam emitted from the electron gun irradiates the wafer through the mask. 5. The gap adjusting device according to claim 1, further comprising a beam control means.
と、第２の被測定面を有する第２の対象物とを、該第２
の被測定面が前記第１の被測定面に対向するように保持
する工程と、 第１の変位計で、該第１の変位計から前記第１の被測定
面までの距離ＤDを測定する工程と、 第２の変位計で、該第２の変位計から前記第２の被測定
面までの距離ＤAを測定する工程と、 前記第２の変位計から、前記第１の変位計に対する相対
的位置が固定されたダミー被測定面までの距離ＤB、前
記第１の変位計から前記ダミー被測定面までの距離
ＤC、及び前記距離ＤD、ＤAから、ＤA＋ＤD−（ＤB＋Ｄ
C）を計算し、前記第１の被測定面と第２の被測定面と
の間隔を求める工程とを有するギャップ調節方法。6. A first object having a first surface to be measured and a second object having a second surface to be measured are
Holding the surface to be measured so that it faces the first surface to be measured, and measuring the distance D D from the first displacement meter to the surface to be measured with the first displacement meter. And a step of measuring a distance D A from the second displacement meter to the second surface to be measured with a second displacement meter, and a step of measuring the distance D A from the second displacement meter to the first displacement meter. A distance D B to the dummy measured surface whose relative position is fixed, a distance D C from the first displacement meter to the dummy measured surface, and a distance D D , D A to D A + D D -(D B + D
C ) and calculating the distance between the first measured surface and the second measured surface.
の間隔を求める工程の前に、さらに、前記第２の変位計
で、該第２の変位計から前記ダミー被測定面までの距離
ＤBを測定する工程を含む請求項６に記載のギャップ調
節方法。7. Before the step of obtaining the distance between the first measured surface and the second measured surface, the dummy displacement measurement is further performed from the second displacement meter by the second displacement meter. The gap adjusting method according to claim 6, comprising a step of measuring a distance D B to the surface.
と、第２の被測定面を有する第２の対象物とを、該第２
の被測定面が前記第１の被測定面に対向するように保持
する工程と、 第１の変位計で、該第１の変位計から前記第１の被測定
面までの距離ＤDを測定する工程と、 第２の変位計で、該第２の変位計から前記第２の被測定
面までの距離ＤAを測定する工程と、 前記第２の変位計から、前記第１の変位計に対する相対
的位置が固定されたダミー被測定面までの距離ＤB、前
記第１の変位計から前記ダミー被測定面までの距離
ＤC、及び前記距離ＤD、ＤAに基づいて、前記第１の被
測定面と第２の被測定面との間隔を特定する情報を求め
る工程と、 前記第１の被測定面と第２の被測定面との間隔を特定す
る情報に基づいて、前記第１の被測定面と第２の被測定
面との間隔が変化するように、前記第１の対象物及び第
２の対象物の少なくとも一方を移動させる工程とを有す
るギャップ調節方法。8. A first object having a first surface to be measured and a second object having a second surface to be measured are
Holding the surface to be measured so that it faces the first surface to be measured, and measuring the distance D D from the first displacement meter to the surface to be measured with the first displacement meter. And a step of measuring a distance D A from the second displacement meter to the second surface to be measured with a second displacement meter, and a step of measuring the distance D A from the second displacement meter to the first displacement meter. Based on the distance D B to the dummy measured surface whose relative position is fixed, the distance D C from the first displacement meter to the dummy measured surface, and the distances D D and D A. A step of obtaining information for specifying a distance between the first measured surface and the second measured surface; and based on information for specifying a distance between the first measured surface and the second measured surface, At least one of the first object and the second object is adjusted so that the distance between the first measured surface and the second measured surface changes. A method for adjusting a gap, the method including: moving.
の間隔を特定する情報を求める工程の前に、さらに、前
記第２の変位計で前記ダミー被測定面までの距離ＤBを
測定する工程を含む請求項８に記載のギャップ調節方
法。9. The distance to the dummy measured surface is further measured by the second displacement gauge before the step of obtaining information for specifying the distance between the first measured surface and the second measured surface. The gap adjusting method according to claim 8, further comprising the step of measuring D B.
を保持する第1の保持手段と、 第２の被測定面を有する第２の対象物を、該第２の被測
定面が前記第１の被測定面に対向するように保持する第
２の保持手段と、 前記第１の被測定面に対向するように配置され、前記第
１の被測定面までの距離を測定する第１の変位計と、 前記第２の被測定面に対向するように配置され、該第２
の被測定面までの距離及び前記第１の変位計までの距離
を測定する第２の変位計と、 前記第１の被測定面と第２の被測定面との間隔が変化す
るように、前記第１の保持手段及び第２の保持手段の少
なくとも一方を移動させる移動機構とを有するギャップ
調節装置。10. A first holding means for holding a first object having a first surface to be measured, and a second object having a second surface to be measured, the second object to be measured. Is arranged so as to face the first surface to be measured, and second holding means for holding the first surface to be measured to measure the distance to the first surface to be measured. A first displacement meter, and a second displacement meter arranged so as to face the second surface to be measured.
A second displacement meter for measuring the distance to the surface to be measured and the distance to the first displacement meter, and the distance between the first surface to be measured and the second surface to be measured changes, A gap adjusting device having a moving mechanism for moving at least one of the first holding means and the second holding means.
と、第２の被測定面を有する第２の対象物とを、該第２
の被測定面が前記第１の被測定面に対向するように保持
する工程と、 前記第１の被測定面に対向するように配置された第１の
変位計で、該第１の変位計から該第１の被測定面までの
距離ＤDを測定する工程と、 前記第２の被測定面に対向するように配置された第２の
変位計で、該第２の変位計から該第２の被測定面までの
距離ＤAを測定する工程と、 前記第１の変位計から前記第２の変位計までの距離
ＤE、及び前記距離ＤD、Ｄ Aから、ＤA＋ＤD−ＤEを計算
し、前記第１の被測定面と第２の被測定面との間隔を求
める工程とを有するギャップ調節方法。11. A first object having a first surface to be measured.
And a second object having a second surface to be measured,
Hold so that the measured surface of is facing the first measured surface
And the process of A first surface arranged to face the first surface to be measured.
A displacement gauge, from the first displacement gauge to the first measured surface
Distance DDAnd the step of measuring A second surface arranged to face the second surface to be measured.
A displacement meter, from the second displacement meter to the second measured surface
Distance DAAnd the step of measuring Distance from the first displacement gauge to the second displacement gauge
DE, And the distance DD, D AFrom DA+ DD-DECalculate
Then, the distance between the first measured surface and the second measured surface is calculated.
And a gap adjusting method.
と、第２の被測定面を有する第２の対象物とを、該第２
の被測定面が前記第１の被測定面に対向するように保持
する工程と、 前記第１の被測定面に対向するように配置された第１の
変位計で、該第１の変位計から該第１の被測定面までの
距離ＤDを測定する工程と、 前記第２の被測定面に対向するように配置された第２の
変位計で、該第２の変位計から該第２の被測定面までの
距離ＤAを測定する工程と、 前記第１の変位計から前記第２の変位計までの距離
ＤE、及び前記距離ＤD、Ｄ Aに基づいて、前記第１の被
測定面と第２の被測定面との間隔を特定する情報を求め
る工程と、 前記第１の被測定面と第２の被測定面との間隔を特定す
る情報に基づいて、前記第１の被測定面と第２の被測定
面との間隔が変化するように、前記第１の対象物及び第
２の対象物の少なくとも一方を移動させる工程とを有す
るギャップ調節方法。12. A first object having a first surface to be measured.
And a second object having a second surface to be measured,
Hold so that the measured surface of is facing the first measured surface
And the process of A first surface arranged to face the first surface to be measured.
A displacement gauge, from the first displacement gauge to the first measured surface
Distance DDAnd the step of measuring A second surface arranged to face the second surface to be measured.
A displacement meter, from the second displacement meter to the second measured surface
Distance DAAnd the step of measuring Distance from the first displacement gauge to the second displacement gauge
DE, And the distance DD, D ABased on the
Obtain information that specifies the distance between the measurement surface and the second measured surface
Process, Specifying the distance between the first measured surface and the second measured surface
The first surface to be measured and the second surface to be measured based on the information
The first object and the first object so that the distance to the surface changes.
And a step of moving at least one of the two objects.
Gap adjustment method.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001312624A JP4025049B2 (en) | 2001-10-10 | 2001-10-10 | Gap adjustment device |
| TW90128932A TW522218B (en) | 2000-07-19 | 2001-11-22 | Gap adjustment apparatus and gap adjustment method for adjusting gap between two objects |
| US09/993,500 US6852988B2 (en) | 2000-11-28 | 2001-11-27 | Gap adjustment apparatus and gap adjustment method for adjusting gap between two objects |
| KR10-2001-0074214A KR100471018B1 (en) | 2000-11-28 | 2001-11-27 | Gap adjustment apparatus and gap adjustment method for adjusting gap between two objects |
| US10/911,474 US7225048B2 (en) | 2000-11-28 | 2004-08-05 | Gap adjustment apparatus and gap adjustment method for adjusting gap between two objects |
| US10/911,554 US7123997B2 (en) | 2000-11-28 | 2004-08-05 | Gap adjustment apparatus and gap adjustment method for adjusting gap between two objects |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001312624A JP4025049B2 (en) | 2001-10-10 | 2001-10-10 | Gap adjustment device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003124093A true JP2003124093A (en) | 2003-04-25 |
| JP4025049B2 JP4025049B2 (en) | 2007-12-19 |
Family
ID=19131247
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001312624A Expired - Fee Related JP4025049B2 (en) | 2000-07-19 | 2001-10-10 | Gap adjustment device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4025049B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011119594A (en) * | 2009-12-07 | 2011-06-16 | Nsk Ltd | Proximity exposure device and proximity exposure method |
| JP2012204500A (en) * | 2011-03-24 | 2012-10-22 | Tokyo Electron Ltd | Levitation coating device |
| KR20150102935A (en) * | 2013-01-04 | 2015-09-09 | 수스 마이크로텍 리소그라피 게엠바하 | Chuck, in particular for use in a mask aligner |
-
2001
- 2001-10-10 JP JP2001312624A patent/JP4025049B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011119594A (en) * | 2009-12-07 | 2011-06-16 | Nsk Ltd | Proximity exposure device and proximity exposure method |
| JP2012204500A (en) * | 2011-03-24 | 2012-10-22 | Tokyo Electron Ltd | Levitation coating device |
| KR20150102935A (en) * | 2013-01-04 | 2015-09-09 | 수스 마이크로텍 리소그라피 게엠바하 | Chuck, in particular for use in a mask aligner |
| JP2016503965A (en) * | 2013-01-04 | 2016-02-08 | スス マイクロテク リソグラフィー，ゲーエムベーハー | Chuck used especially in mask aligner |
| US9824909B2 (en) | 2013-01-04 | 2017-11-21 | Suss Microtec Lithography Gmbh | Chuck, in particular for use in a mask aligner |
| KR102169866B1 (en) * | 2013-01-04 | 2020-10-27 | 수스 마이크로텍 리소그라피 게엠바하 | Chuck, in particular for use in a mask aligner |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4025049B2 (en) | 2007-12-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100471018B1 (en) | Gap adjustment apparatus and gap adjustment method for adjusting gap between two objects | |
| JP3181050B2 (en) | Projection exposure method and apparatus | |
| JP4523570B2 (en) | Method for correcting disturbances in the optical path of a level sensor | |
| TW200944968A (en) | Method and lithographic apparatus for measuring and acquiring height data relating to a substrate surface | |
| KR20130099833A (en) | Light exposure device, light exposure method and manufactuiring mehod of display panel substrate | |
| JP2000252203A (en) | Alignment mark and alignment method | |
| JP2009147332A (en) | Device for transmission image detection for use in lithographic projection apparatus and method for determining third order distortion of patterning device and/or projection system of such a lithographic apparatus | |
| JP4025049B2 (en) | Gap adjustment device | |
| US20050041235A1 (en) | Exposure apparatus, method of controlling same, and method of manufacturing devices | |
| JPH11233398A (en) | Aligner and exposure method | |
| JPH09246356A (en) | Surface position setting method | |
| JP3472553B2 (en) | Gap adjusting device and adjusting method | |
| JPH11325821A (en) | Stage controlling method and aligner | |
| JPH09199573A (en) | Positioning stage apparatus and aligner using the same | |
| JP3547003B2 (en) | Gap adjusting device and adjusting method | |
| US8237917B2 (en) | Exposure apparatus and device manufacturing method | |
| JPS623280A (en) | Diffraction grating exposure device | |
| US6246053B1 (en) | Non-contact autofocus height detector for lithography systems | |
| JP2805239B2 (en) | SOR-X-ray exposure equipment | |
| JP3847290B2 (en) | Gap adjusting device and adjusting method | |
| JPH0221553A (en) | Electron ray length-measuring device | |
| JP2843890B2 (en) | Exposure equipment | |
| KR20100083459A (en) | Exposure apparatus and method to measure orthogonality thereof | |
| JP2020198310A (en) | Auto-focus device | |
| JP2840303B2 (en) | Exposure equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20040726 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20040831 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20041101 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070123 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070322 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20071002 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20071004 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101012 Year of fee payment: 3 |
|
| LAPS | Cancellation because of no payment of annual fees |