JPS61104668A - 負性抵抗素子 - Google Patents

負性抵抗素子

Info

Publication number
JPS61104668A
JPS61104668A JP59227030A JP22703084A JPS61104668A JP S61104668 A JPS61104668 A JP S61104668A JP 59227030 A JP59227030 A JP 59227030A JP 22703084 A JP22703084 A JP 22703084A JP S61104668 A JPS61104668 A JP S61104668A
Authority
JP
Japan
Prior art keywords
negative resistance
speed
voltage
gate
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59227030A
Other languages
English (en)
Japanese (ja)
Other versions
JPH053148B2 (cg-RX-API-DMAC10.html
Inventor
Takashi Ito
隆司 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59227030A priority Critical patent/JPS61104668A/ja
Publication of JPS61104668A publication Critical patent/JPS61104668A/ja
Publication of JPH053148B2 publication Critical patent/JPH053148B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
JP59227030A 1984-10-29 1984-10-29 負性抵抗素子 Granted JPS61104668A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59227030A JPS61104668A (ja) 1984-10-29 1984-10-29 負性抵抗素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59227030A JPS61104668A (ja) 1984-10-29 1984-10-29 負性抵抗素子

Publications (2)

Publication Number Publication Date
JPS61104668A true JPS61104668A (ja) 1986-05-22
JPH053148B2 JPH053148B2 (cg-RX-API-DMAC10.html) 1993-01-14

Family

ID=16854415

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59227030A Granted JPS61104668A (ja) 1984-10-29 1984-10-29 負性抵抗素子

Country Status (1)

Country Link
JP (1) JPS61104668A (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011187766A (ja) * 2010-03-10 2011-09-22 Toshiba Corp 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011187766A (ja) * 2010-03-10 2011-09-22 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
JPH053148B2 (cg-RX-API-DMAC10.html) 1993-01-14

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees