JPS61102830U - - Google Patents
Info
- Publication number
- JPS61102830U JPS61102830U JP1985187919U JP18791985U JPS61102830U JP S61102830 U JPS61102830 U JP S61102830U JP 1985187919 U JP1985187919 U JP 1985187919U JP 18791985 U JP18791985 U JP 18791985U JP S61102830 U JPS61102830 U JP S61102830U
- Authority
- JP
- Japan
- Prior art keywords
- infrared detector
- detection element
- printed wiring
- wiring board
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 4
- 239000011800 void material Substances 0.000 claims 1
- 230000005669 field effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Description
第1図は本考案の第1の実施例の概略斜視図、
第2図は本考案の第2の実施例の概略分解斜視図
、第3図ないし第5図はそれらの実施例における
要部の種々異なる変形例を示す概略断面図、第6
図は従来の赤外線検出器の概略斜視図である。 1……基板、2,3,4,22,23,23a
,24……接続ピン、6……検出素子、10……
高抵抗体、11……電界効果トランジスタ、12
,12a……プリント配線板、25……貫通孔、
26……窪み、27……間隔片。
第2図は本考案の第2の実施例の概略分解斜視図
、第3図ないし第5図はそれらの実施例における
要部の種々異なる変形例を示す概略断面図、第6
図は従来の赤外線検出器の概略斜視図である。 1……基板、2,3,4,22,23,23a
,24……接続ピン、6……検出素子、10……
高抵抗体、11……電界効果トランジスタ、12
,12a……プリント配線板、25……貫通孔、
26……窪み、27……間隔片。
Claims (1)
- 【実用新案登録請求の範囲】 (1) ケース内にて基板上1上に設けられた少く
とも1つの検出素子6を備え、この検出素子がそ
の基板上で他のデバイス10,11と接続され、
かつその基板からは接続ピン2,3,4,22,
23,23a,24が下方に向けて突出させられ
ている赤外線検出器において、前記基板1の内面
上に直接にプリント配線板12,12aが固定さ
れ、このプリント配線板によつて前記検出素子6
が前記他のデバイス10,11に電気的に接続さ
れ、前記検出素子6は少なくともその中央領域が
その下に置かれる部材12,12aからある間隔
を有することを特徴とする赤外線検出器。 (2) 前記間隔は少なくとも0.1mmの大きさで
あることを特徴とする実用新案登録請求の範囲第
1項記載の赤外線検出器。 (3) 前記プリント配線板12,12a前記検出
素子6の中央領域の下方に位置する部分に空所が
形成されていることを特徴とする実用新案登録請
求の範囲第1項記載の赤外線検出器。 (4) 前記空所は前記プリント配線板12,12
aに貫通孔25の形態にて形成されていることを
特徴とする実用新案登録請求の範囲第3項記載の
赤外線検出器。 (5) 前記空所は前記プリント配線板12,12
aに窪み26の形態にて形成されていることを特
徴とする実用新案登録請求の範囲第3項記載の赤
外線検出器。 (6) 前記検出素子6は前記プリント配線板12
,12aからある間隔を持たされていることを特
徴とする実用新案登録請求の範囲第1項または第
2項記載の赤外線検出器。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE8436542 | 1984-12-13 | ||
DE3528557 | 1985-08-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61102830U true JPS61102830U (ja) | 1986-06-30 |
Family
ID=25834872
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1985187919U Pending JPS61102830U (ja) | 1984-12-13 | 1985-12-04 |
Country Status (2)
Country | Link |
---|---|
EP (1) | EP0184747A1 (ja) |
JP (1) | JPS61102830U (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE8705296U1 (de) * | 1987-04-09 | 1988-08-04 | Heimann Gmbh, 6200 Wiesbaden | Infrarotdetektor |
EP0308749A3 (de) * | 1987-09-25 | 1990-07-11 | Siemens Aktiengesellschaft | Elektrooptische Baugruppe |
EP0308748A3 (de) * | 1987-09-25 | 1990-07-04 | Siemens Aktiengesellschaft | Elektrooptische Baugruppe |
DE8808815U1 (de) * | 1988-06-23 | 1988-09-15 | Heimann Optoelectronics Gmbh, 65199 Wiesbaden | Infrarotdetektor |
JPH0258008A (ja) * | 1988-08-24 | 1990-02-27 | Sumitomo Electric Ind Ltd | 光モジュール |
JPH0682073B2 (ja) * | 1988-08-30 | 1994-10-19 | 株式会社村田製作所 | 焦電型赤外線センサ |
US5323025A (en) * | 1989-05-18 | 1994-06-21 | Murata Mfg. Co., Ltd. | Pyroelectric IR-sensor having a low thermal conductive ceramic substrate |
EP0398725B1 (en) * | 1989-05-18 | 1994-08-03 | Murata Manufacturing Co., Ltd. | Pyroelectric IR - sensor |
DE4111135A1 (de) * | 1991-04-06 | 1992-10-08 | Diehl Gmbh & Co | Sensor |
JP3680303B2 (ja) * | 1994-11-08 | 2005-08-10 | 住友電気工業株式会社 | 光電変換モジュール |
JPH08148702A (ja) * | 1994-11-18 | 1996-06-07 | Sumitomo Metal Mining Co Ltd | 赤外線検知器 |
CN107990979B (zh) * | 2017-11-25 | 2020-07-28 | 贵阳永青仪电科技有限公司 | 一种防电涌光敏传感器 |
CN108007487B (zh) * | 2017-11-25 | 2020-08-28 | 贵阳永青仪电科技有限公司 | 一种光敏传感器 |
CN109738075A (zh) * | 2019-02-15 | 2019-05-10 | 东莞传晟光电有限公司 | 一种to基座热释电传感器 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3757127A (en) * | 1970-08-10 | 1973-09-04 | Cogar Corp | Photodetector packing assembly |
DE2211699A1 (de) * | 1972-03-10 | 1973-09-13 | Sensors Inc | Filmfoermiger strahlungsdetektor und verfahren zur herstellung desselben |
IT1209844B (it) * | 1981-02-09 | 1989-08-30 | Selenia Ind Elettroniche | Dispositivo per rivelazione dell'infrarosso a molti elementi ad elevata densita' di passanti a bassa per dita termica |
JPS57193094A (en) * | 1981-05-18 | 1982-11-27 | Matsushita Electric Ind Co Ltd | Electronic circuit part and method of mounting same |
GB2126795B (en) * | 1982-09-09 | 1986-12-03 | Plessey Co Plc | Optical device |
-
1985
- 1985-12-02 EP EP85115259A patent/EP0184747A1/de not_active Withdrawn
- 1985-12-04 JP JP1985187919U patent/JPS61102830U/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0184747A1 (de) | 1986-06-18 |